SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME

Abstract

A semiconductor device package includes a substrate, a first antenna pattern and a second antenna pattern. The substrate has a first surface and a second surface opposite to the first surface. The first antenna pattern is disposed over the first surface of the substrate. The first antenna pattern has a first bandwidth. The second antenna pattern is disposed over the first antenna pattern. The second antenna pattern has a second bandwidth different from the first bandwidth. The first antenna pattern and the second antenna pattern are at least partially overlapping in a direction perpendicular to the first surface of the substrate.

Description

BACKGROUND

1. Technical Field

The present disclosure relates to a semiconductor device package and a method of manufacturing the same, and to a semiconductor device package including an antenna and a method of manufacturing the same.

2. Description of the Related Art

Wireless communication devices, such as cell phones, typically include antennas for transmitting and receiving radio frequency (RF) signals. In recent years, with the continuous development of mobile communication and the pressing demand for high data rate and stable communication quality, relatively high frequency wireless transmission (e.g., 28 GHz or 60 GHz) has become one of the most important topics in the mobile communication industry. However, signal attenuation and inference are some of the problems at relatively high frequency (or relatively short wavelength) wireless transmission.

SUMMARY

In accordance with some embodiments of the present disclosure, a semiconductor device package includes a substrate, a first antenna pattern and a second antenna pattern. The substrate has a first surface and a second surface opposite to the first surface. The first antenna pattern is disposed over the first surface of the substrate. The first antenna pattern has a first bandwidth. The second antenna pattern is disposed over the first antenna pattern. The second antenna pattern has a second bandwidth different from the first bandwidth. The first antenna pattern and the second antenna pattern are at least partially overlapping in a direction perpendicular to the first surface of the substrate.

In accordance with some embodiments of the present disclosure, a semiconductor device package includes a substrate, a first antenna pattern and a second antenna pattern. The substrate has a first surface and a second surface opposite to the first surface. The first antenna pattern is disposed over the first surface of the substrate. The first antenna pattern has a feeding point. The second antenna pattern is disposed over the first antenna pattern. The second antenna pattern has a feeding point. The feeding point of the first antenna pattern is coupled to the feeding point of the second antenna pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a cross-sectional view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 1B illustrates a perspective view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 2 illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 3 illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 4 illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 5 illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 6 illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

Common reference numerals are used throughout the drawings and the detailed description to indicate the same or similar components. The present disclosure will be readily understood from the following detailed description taken in conjunction with the accompanying drawings.

DETAILED DESCRIPTION

FIG. 1A illustrates a top view of a semiconductor device package 1 in accordance with some embodiments of the present disclosure. FIG. 1B illustrates a perspective view of the semiconductor device package 1 illustrated in FIG. 1A in accordance with some embodiments of the present disclosure (for clarity, some of the components in FIG. 1A are omitted in FIG. 1B). The semiconductor device package 1 includes a substrate 10, dielectric layers 11a, 11b, 11c and 11d, antenna patterns 12, 13 and 14.

The substrate 10 may be, for example, a printed circuit board, such as a paper-based copper foil laminate, a composite copper foil laminate, or a polymer-impregnated glass-fiber-based copper foil laminate. The substrate 10 may include an interconnection structure (or electrical connection), such as a redistribution layer (RDL) or a grounding element. The substrate 10 has a surface 101 and a surface 102 opposite to the surface 101. In some embodiments, one or more electronic components (not shown in the drawing) are disposed on the surface 102 of the substrate 10 and electrically connected to the substrate 10. In some embodiments, the electronic components may be active electronic components, such as integrated circuit (IC) chips or dies. The electronic components may be electrically connected to the substrate 10 (e.g., to the RDL) by way of flip-chip or wire-bond techniques.

A conductive layer 10a is disposed on the surface 101 of the substrate 10. In some embodiments, the conductive layer 10a is formed of or includes gold (Au), silver (Ag), aluminum (Al), copper (Cu), or an alloy thereof. In some embodiments, the conductive layer 10a acts as a ground layer or a RF layer for the antenna pattern 12, 13 or 14. An isolation layer 10b (e.g., solder mask or solder resist) is disposed on the surface 101 of the substrate 10 to protect the conductive layer 10a.

The dielectric layers 11a, 11b, 11c and 11d are arranged in a stacked structure. For example, as shown in FIG. 1A, the dielectric layer 11a is disposed on the isolation layer 10b, the dielectric layer 11b is disposed on the dielectric layer 11a, the dielectric layer 11c is disposed on the dielectric layer 11b, and the dielectric layer 11d is disposed on the dielectric layer 11c. In some embodiments, the dielectric layer 11a and 11b are used to increase a distance (e.g., a clearance area) between the antenna pattern 12 and the conductive layer 10a (e.g., ground plane or RF plane), which would improve the performance of the antenna pattern 12. In some embodiments, the number of the dielectric layers can be adjusted depending on different specifications.

In some embodiments, the dielectric layers 11a, 11b, 11c and 11d may include molding compounds, pre-impregnated composite fibers (e.g., pre-preg), Borophosphosilicate Glass (BPSG), silicon oxide, silicon nitride, silicon oxynitride, Undoped Silicate Glass (USG), any combination thereof, or the like. Examples of molding compounds may include, but are not limited to, an epoxy resin including fillers dispersed therein. Examples of a pre-preg may include, but are not limited to, a multi-layer structure formed by stacking or laminating a number of pre-impregnated materials/sheets. The dielectric layers 11a, 11b, 11c and 11d may include the same or different materials depending on different specifications.

The antenna pattern 12 is disposed on the dielectric layer 11b and covered by the dielectric layer 11c. In some embodiments, as shown in FIG. 1A and FIG. 1B, the antenna pattern 12 has a portion 12a and a portion 12b. The portion 12a is electrically connected to the conductive layer 10a through a conductive via 12v. In some embodiments, the portion 12a acts as a feeding point of the antenna pattern 12. For example, the portion 12a is arranged to transmit or receive signal from the conductive layer 10a through the conductive via 12v. The portion 12b is spaced apart from the portion 12a. For example, there is a gap between the portion 12a and the portion 12b. In some embodiments, the portion 12b may surround the portion 12a. In some embodiments, the signal transmission between the portion 12a and the portion 12b may be achieved by coupling. In some embodiments, the antenna pattern 12 is, or includes, a conductive material such as a metal or metal alloy. Examples of the conductive material include Au, Ag, Al, Cu, or an alloy thereof.

In some embodiments, the antenna pattern 12 may include a single antenna element. In some embodiments, the antenna pattern 12 may include multiple antenna elements. For example, the antenna pattern 12 may include an array including patch antennas. In some embodiments, the antenna pattern 12 may include an M×N array of antenna elements, where M or N is an integer greater than 1. In some embodiments, M can be the same as or different from N depending on design specifications. For example, as shown in FIGS. 2-5, which illustrate top views of the semiconductor device package 1 in various embodiments (for clarity, some of the components of the semiconductor device package 1 are omitted, such as the antenna pattern 14, dielectric layers 11a, 11b, 11c, 11d and the substrate 10), the antenna pattern 12 may include a 1×4 array of antenna elements. For example, as shown in FIG. 6, which illustrate a top view of the semiconductor device package 1 in some embodiments, the antenna pattern 12 may include a 3×8 array of antenna elements. In some embodiments, the antenna pattern 12 is or includes a patch antenna or a patch antenna array operating in a frequency of 28 GHz. For example, a bandwidth of the antenna pattern 12 is in a range from about 27.5 GHz to about 28.35 GHz.

As shown in FIG. 1A and FIG. 1B, the antenna pattern 13 is disposed on the dielectric layer 11c and covered by the dielectric layer 11d. The antenna pattern 13 is electrically connected to the portion 12a of the antenna pattern 12 through a conductive via 13v. For example, the signal transmission between the antenna pattern 12 and the antenna pattern 13 may be achieved by the direct feed. In other embodiments, the signal transmission between the antenna pattern 12 and the antenna pattern 13 may be achieved by magnetically coupling. In some embodiments, the antenna pattern 13 is, or includes, a conductive material such as a metal or metal alloy. Examples of the conductive material include Au, Ag, Al, Cu, or an alloy thereof.

In some embodiments, the antenna pattern 13 is disposed over the antenna pattern 12, and the number, the location and the shape of the antenna pattern 13 may be corresponding to those of the antenna pattern 12. For example, as shown in FIGS. 2-5, the antenna pattern 13 may include a 1×4 array of antenna elements located corresponding to the antenna pattern 12. For example, as shown in FIG. 6, the antenna pattern 12 may include a 3×8 array of antenna elements located corresponding to the antenna pattern 12. In some embodiments, the antenna pattern 13 is or includes a patch antenna or a patch antenna array operating in a frequency of 38 GHz. For example, a bandwidth of the antenna pattern 13 is in a range from about 37 GHz to about 40 GHz.

As shown in FIG. 1A and FIG. 1B, the antenna pattern 14 is disposed on the dielectric layer 11d and may be covered by a protection layer (now shown). The antenna pattern 14 is spaced apart from the antenna pattern 13 and is coupled to the antenna pattern 13 for signal transmission therebetween. For example, the signal transmission between the antenna pattern 13 and the antenna pattern 14 may be achieved by coupling. In some embodiments, the antenna pattern 14 is, or includes, a conductive material such as a metal or metal alloy. Examples of the conductive material include Au, Ag, Al, Cu, or an alloy thereof.

In some embodiments, the antenna pattern 14 is disposed over the antenna pattern 13, and the number and the location of the antenna pattern 14 correspond to those of the antenna pattern 13. In some embodiments, the area of the antenna pattern 14 is substantially the same as that of the antenna pattern 13. In some embodiments, the area of the antenna pattern 14 may be greater or less than that of the antenna pattern 13 depending on different specifications. In some embodiments, the antenna pattern 14 is or includes a patch antenna or a patch antenna array operating in a frequency of 38 GHz. For example, a bandwidth of the antenna pattern 14 is in a range from about 37 GHz to about 40 GHz. By stacking two antenna patterns (e.g., the antenna patterns 13 and 14) with the same or similar bandwidth, the bandwidth can further increase.

To increase a bandwidth and a stability of the transmission rate of a wireless device, a dual-band (or multi-band) antenna module having two (or more) antennas with different operating bandwidths can be implemented. In some embodiments, the dual-band antenna module may include a one antenna (e.g., a dual-polarization patch antenna) having a first bandwidth (e.g., 28 GHz) and the other antenna (e.g., another dual-polarization patch antenna) having a second bandwidth (e.g., 38 GHz) arranged alternatively in the same plane or level. However, the polarized wave/radiation (e.g., magnetic field and/or electric field) emitted by one antenna may pass through the other antenna, which would adversely affect the performance of the other antenna, and vice versa.

In accordance with the embodiments as shown in FIGS. 1A and 1B, the antenna pattern 13 is disposed over the antenna pattern 12. For example, the antenna pattern 13 and the antenna pattern 12 are disposed on different planes or levels. Hence, the polarized wave/radiation (e.g., magnetic field and/or electric field) emitted by the antenna pattern 13 would not pass through the antenna pattern 12, and vice versa. For example, as shown in FIG. 2, the antenna pattern 12 or 13 include a 1×4 array of patch antennas, each has a pair of polarized ports (e.g., “p1 and p2,” “p3 and p4,” “p5 and p6,” “p7 and p8”). Take the topmost patch antenna for an example, the port p1 would generate two polarized radiations/waves, such as a magnetic field) M1 and an electric field E1 (the magnetic field M1 and the electric field E1 are orthogonal). Similarly, the port p2 would also generate two polarized radiations/waves, such as a magnetic field M2 and an electric field E2 (the magnetic field M1 and the electric field E1 are orthogonal). As shown in FIG. 2, the magnetic field M1 and the magnetic field M2 are orthogonal, and the electric field M1 and the electric field M2 are orthogonal. If the antenna patterns 12 and 13 are arranged alternatively on the same plane or level, the polarized radiation M2 generated by the antenna pattern 13 (e.g., the port p2 of the antenna pattern 13) and/or the polarized radiation E1 generated by the antenna pattern 13 (e.g., the port p1 of the antenna pattern 13) would pass through the antenna pattern 12, which would adversely affect the performance of the antenna pattern 12, and vice versa. As shown in FIG. 2, since the antenna pattern 13 and the antenna pattern 12 are disposed on different planes or levels, the polarized wave M2 or E1 emitted by the topmost patch antenna selectively passes through the patch antennas having the same bandwidth (e.g., other patch antennas of the antenna pattern 13), but would not pass through the patch antennas having different bandwidth (e.g., the patch antennas of the antenna pattern 12), and vice versa. This would avoid the interference between the antenna patterns 12 and 13, and improve the performance of the antenna patterns 12 and 13.

The structure illustrated in FIG. 3 is similar to that in FIG. 2, except that in FIG. 3, the antenna patterns 12 and 13 rotate counterclockwise by 45°. As shown in FIG. 3, both the polarized radiations E1, E2, M1 and M2 generated by the topmost patch antenna would not pass through either the patch antennas having different bandwidth (e.g., the patch antennas of the antenna pattern 12) or the patch antennas having the same bandwidth (e.g., other patch antennas of the antenna pattern 13). Therefore, the inference can be further eliminated or reduced, which would increase the gain of the antenna patterns 12 and 13.

In some embodiments, the antenna pattern 12 or 13 may have different shapes. For example, as shown in FIG. 2, the antenna pattern 12 or 13 is rectangular. For example, as shown in FIGS. 3 and 6, the antenna pattern 12 or 13 may be shaped like a rhombus. For example, as shown in FIG. 4, the antenna pattern 12 or 13 may be shaped like a cross. For example, as shown in FIG. 5, the antenna pattern 12 or 13 may be shaped like an “X”. The shapes of the antenna patterns 12 and 13 can be changed or adjusted depending on different design specifications. For example, the antenna patterns 12 and 13 can be shaped like a polygon having N edges (or sides), where N is an integer equal to or greater than 3.

As used herein, the terms “substantially,” “substantial,” “approximately,” and “about” are used to denote and account for small variations. For example, when used in conjunction with a numerical value, the terms can refer to a range of variation of less than or equal to ±10% of that numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. As another example, a thickness of a film or a layer being “substantially uniform” can refer to a standard deviation of less than or equal to ±10% of an average thickness of the film or the layer, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. The term “substantially coplanar” can refer to two surfaces within micrometers of lying along a same plane, such as within 40 within 30 within 20 within 10 or within 1 μm of lying along the same plane. Two surfaces or components can be deemed to be “substantially perpendicular” if an angle therebetween is, for example, 90°±10°, such as ±5°, ±4°, ±3°, ±2°, ±1°, ±0.5°, ±0.1°, or ±0.05°. When used in conjunction with an event or circumstance, the terms “substantially,” “substantial,” “approximately,” and “about” can refer to instances in which the event or circumstance occurs precisely, as well as instances in which the event or circumstance occurs to a close approximation.

As used herein, the singular terms “a,” “an,” and “the” may include plural referents unless the context clearly dictates otherwise. In the description of some embodiments, a component provided “on” or “over” another component can encompass cases where the former component is directly on (e.g., in physical contact with) the latter component, as well as cases where one or more intervening components are located between the former component and the latter component.

As used herein, the terms “conductive,” “electrically conductive” and “electrical conductivity” refer to an ability to transport an electric current. Electrically conductive materials typically indicate those materials that exhibit little or no opposition to the flow of an electric current. One measure of electrical conductivity is Siemens per meter (S/m). Typically, an electrically conductive material is one having a conductivity greater than approximately 104 S/m, such as at least 105 S/m or at least 106 S/m. The electrical conductivity of a material can sometimes vary with temperature. Unless otherwise specified, the electrical conductivity of a material is measured at room temperature.

Additionally, amounts, ratios, and other numerical values are sometimes presented herein in a range format. It can be understood that such range formats are used for convenience and brevity, and should be understood flexibly to include not only numerical values explicitly specified as limits of a range, but also all individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly specified.

While the present disclosure has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations do not limit the present disclosure. It can be clearly understood by those skilled in the art that various changes may be made, and equivalent elements may be substituted within the embodiments without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not necessarily be drawn to scale. There may be distinctions between the artistic renditions in the present disclosure and the actual apparatus, due to variables in manufacturing processes and such. There may be other embodiments of the present disclosure which are not specifically illustrated. The specification and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the present disclosure. All such modifications are intended to be within the scope of the claims appended hereto. While the methods disclosed herein have been described with reference to particular operations performed in a particular order, it can be understood that these operations may be combined, sub-divided, or re-ordered to form an equivalent method without departing from the teachings of the present disclosure. Therefore, unless specifically indicated herein, the order and grouping of the operations are not limitations of the present disclosure.

Claims

1. A semiconductor device package comprising: a first antenna;a second antenna disposed over the first antenna; anda third antenna disposed over the second antenna and configured to electrically couple to the second antenna.

2. The semiconductor device package as claimed in claim 1, wherein the first antenna and the second antenna are configured to operate in different frequencies.

3. The semiconductor device package as claimed in claim 1, wherein a width of the second antenna is substantially the same as a width of the third antenna.

4. The semiconductor device package as claimed in claim 1, wherein the first antenna has a first opening under the second antenna.

5. The semiconductor device package as claimed in claim 4, further comprising a first conductive structure at least partially within the first opening and connected to the second antenna.

6. The semiconductor device package as claimed in claim 5, wherein the first antenna has a second opening under the second antenna.

7. The semiconductor device package as claimed in claim 5, wherein the first conductive structure comprises: a conductive pattern within the first opening; anda conductive via connecting the conductive pattern to the second antenna.

8. The semiconductor device package as claimed in claim 1, wherein a portion of the first antenna is exposed by the third antenna from a top view perspective.

9. The semiconductor device package as claimed in claim 1, further comprising: a ground layer disposed under the first antenna; andat least two dielectric layers disposed between the ground layer and the first antenna.

10. The semiconductor device package as claimed in claim 1, wherein the first antenna has a first opening, and the semiconductor device package further comprises a first conductive pattern within the first opening and configured to electrically couple to the first antenna.

11. The semiconductor device package as claimed in claim 10, wherein the first antenna comprises a first portion and a second portion, the first conductive pattern is disposed between the first portion and the second portion, and a distance between the first conductive pattern and the first portion of the first antenna is substantially equal to a distance between the first conductive pattern and the second portion of the first antenna.

12. The semiconductor device package as claimed in claim 10, further comprising a conductive structure disposed under and connected to the first conductive pattern.

13. The semiconductor device package as claimed in claim 12, further comprising two dielectric layers covering the conductive structure.

14. The semiconductor device package as claimed in claim 10, wherein the first antenna further has a second opening, and the semiconductor device package further comprises a second conductive pattern within the second opening and configured to electrically couple to the first antenna.

15. A semiconductor device package comprising: a first dual-polarization antenna configured for operating in a first frequency; and a second dual-polarization antenna disposed at least partially over the first dual-polarization antenna and configured for operating in a second frequency different from the first frequency.

16. The semiconductor device package as claimed in claim 15, wherein the first frequency is lower the second frequency.

17. The semiconductor device package as claimed in claim 15, further comprising a dielectric layer adjacent to the first dual-polarization antenna, wherein a lateral side of the first dual-polarization antenna is substantially parallel to a lateral side of the dielectric layer from a top view perspective.

18. The semiconductor device package as claimed in claim 15, further comprising a ground layer, wherein an extension line of an edge of the first dual-polarization antenna interests two adjacent edges of the ground layer from a top view perspective.

19. A semiconductor device package comprising: a first antenna configured for operating in a first frequency; anda second antenna disposed over the first antenna and configured for operating in a second frequency different from the first frequency, wherein the first antenna and the second antenna are geometrically distinct from each other from a top view perspective.

20. The semiconductor device package as claimed in claim 19, wherein the first antenna has a first edge, and the second antenna has a second edge substantially parallel to the first edge from a top view perspective.