Claims
- 1. A semiconductor device produced by a process for processing semiconductor devices during a single cycle of a furnace, comprising the ordered steps of:
- starting a single furnace cycle by loading a semiconductor device into a heating chamber of a furnace and heating said chamber to a chamber temperature lower than that which would produce diffusion of a dopant in said semiconductor device;
- maintaining said chamber temperature while forming a layer of dopant glass on a surface of said semiconductor device;
- increasing said chamber temperature to a diffusion temperature adequate to drive said dopant into said semiconductor device in an inert environment;
- maintaining said diffusion temperature and inert environment for a period of time to drive said dopant into said semiconductor device:
- elevating said chamber temperature to an oxidizing temperature and generating an oxidizing environment for a period of time to achieve oxidation of said semiconductor device; and
- removing said semiconductor device from said heating chamber of said furnace to complete said single furnace cycle.
- 2. The semiconductor device processed according to claim 1, wherein said forming step includes depositing POCl.sub.3 dopant on said surface of said device by introducing a flow of POCl.sub.3 from a bubbler into said chamber.
- 3. The semiconductor device processed according to claim 1, wherein said drive step includes the steps of:
- introducing a flow of inert gas into said heating chamber; and
- maintaining said diffusion temperature for a period of time to drive said dopant into said semiconductor device.
- 4. The semiconductor device processed according to claim 1, wherein said generating said oxidizing environment step includes the steps of:
- introducing an oxidizing gas flow into said heating chamber; and
- maintaining said temperature for a period of time to oxidize said semiconductor device.
- 5. The semiconductor device processed according to claim 1, having a silicon resistance approximately 2.0 .OMEGA. and an oxide thickness of approximately 2200 .ANG..
- 6. The semiconductor device processed according to claim 1, further comprising the step of neutralizing any remaining dopant in said heating chamber of said furnace by oxidation after said removing step.
- 7. The semiconductor device processed according to claim 1, wherein said loading step includes loading a plurality of wafers into said heating chamber of said furnace in an orientation perpendicular to a gas flow.
- 8. A semiconductor device produced by a process for processing semiconductor devices during a single cycle of a furnace, comprising the ordered steps of:
- establishing a target silicon resistance for said semiconductor devices;
- starting a single furnace cycle by loading a semiconductor device into a heating chamber of a furnace;
- heating said chamber to a chamber temperature lower than that which would produce diffusion of a dopant in said semiconductor device to a degree which would produce a silicon resistance which is less than said target resistance;
- maintaining said chamber temperature while forming a layer of dopant glass on a surface of said semiconductor device;
- increasing said chamber temperature to a diffusion temperature adequate to drive said dopant into said semiconductor device in an inert environment;
- maintaining said diffusion temperature and inert environment for a period of time to drive said dopant into said semiconductor device to produce said target resistance;
- elevating said chamber temperature to an oxidizing temperature and generating an oxidizing environment for a period of time to achieve oxidation of said semiconductor device; and
- removing said semiconductor device from said heating chamber of said furnace to complete said single furnace cycle.
- 9. A semiconductor device produced by a process for processing semiconductor devices during a single cycle of a furnace, comprising the ordered steps of:
- starting a single furnace cycle by heating a heating chamber of a furnace to 850.degree. C.;
- loading a semiconductor device into said heating chamber;
- stabilizing said heating chamber temperature in a gas mixture of 2050 sccm of N.sub.2 and 3500 sccm of O.sub.2 ;
- maintaining said chamber temperature and gas mixture while forming a layer of dopant glass on a surface of said semiconductor device by introducing POCL.sub.3 vapor for 75 minutes, wherein said POCL.sub.3 vapor is generated by passing N.sub.2 gas through a bubbler containing liquid POCL.sub.3 with said liquid POCL.sub.3 held at a temperature below ambient temperature;
- increasing said chamber temperature to a diffusion temperature of 900.degree. to 1100.degree. C. to drive said dopant into said semiconductor device in a nitrogen environment produced by a flow of 6000 sccm of N.sub.2 ;
- maintaining said diffusion temperature and nitrogen environment for a period of 50 minutes to drive said dopant into said semiconductor device;
- generating an oxygen and hydrogen environment by establishing a flow of 5000 sccm of H.sub.2 and 3000 sccm of O.sub.2 within said heating chamber;
- oxidizing said semiconductor device by maintaining said diffusion temperature and hydrogen and oxygen environment for a period of time to achieve oxidation of said wafers;
- reducing said chamber temperature to 800.degree. C.;
- removing said wafers from said heating chamber; and
- introducing an oxygen flow of 10000 sccm of O.sub.2 at a chamber temperature of 800.degree. C. into said chamber for at least 45 minutes to react with any remaining dopant inside said chamber;
- removing said semiconductor device from said heating chamber of said furnace to complete said single furnace cycle.
Parent Case Info
This is a continuation of application Ser. No. 08/487,380 filed on Jun. 7, 1995, abandoned which is a division of 08/098,667 filed on Jul. 28, 1993, U.S. Pat. No. 5,494,852.
US Referenced Citations (9)
Non-Patent Literature Citations (2)
Entry |
Wolf Silicon Processing for the VLSI Gra vol. 1-Process Technology pp. 242-248, and 264-266, Lattace Press 1986. |
Semiconductor Technology Handbook, Trapp et al., 5th ed., 1985, Technology Assoc., Portola VAlley, CA, Bofors Inc., San Mateo, CA, DIF 1--pp. 6.1-6.31. |
Divisions (1)
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Number |
Date |
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Parent |
98667 |
Jul 1993 |
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Continuations (1)
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Number |
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487380 |
Jun 1995 |
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