Semiconductor device

Abstract

Objects of the invention are to provide a semiconductor device including an RFID, which can transmit and receive individual information without a check of remaining capacity of the battery and a change of the battery in accordance with deterioration over time of the battery for a driving power supply; and which maintains a favorable communication state even when electric power, as a power supply for driving, from an external radio wave or electromagnetic wave (carrier wave) is not sufficient. A battery is provided as a power supply for supplying electric power in the RFID, and electric power obtained by a power generation element is charged in the battery.

Description

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram showing a structure of a semiconductor device in Embodiment Mode 1.

FIG. 2 is a diagram showing a structure of a semiconductor device in Embodiment Mode 1.

FIGS. 3A to 3E are views showing a structure of a semiconductor device in Embodiment Mode 1.

FIGS. 4A and 4B are diagrams showing a structure of a semiconductor device in Embodiment Mode 1.

FIG. 5 is a view showing a structure of a semiconductor device in Embodiment Mode 1.

FIG. 6 is a diagram showing a structure of a semiconductor device in Embodiment Mode 1.

FIGS. 7A and 7B are views showing a structure of a semiconductor device in Embodiment Mode 1.

FIGS. 8A and 8B are views each showing a structure of a semiconductor device in Embodiment Mode 1.

FIGS. 9A to 9E are views showing a structure of a semiconductor device in Embodiment Mode 1.

FIGS. 10A to 10C are diagrams showing a structure of a semiconductor device in Embodiment Mode 1.

FIG. 11 is a view showing a structure of a semiconductor device in Embodiment Mode 1.

FIGS. 12A and 12B are each views showing a structure of a semiconductor device in Embodiment Mode 1.

FIGS. 13A and 13B are views each showing a structure of a semiconductor device in Embodiment Mode 1.

FIG. 14 is a diagram showing a structure of a semiconductor device in Embodiment Mode 2.

FIG. 15 is a diagram showing a structure of a semiconductor device in Embodiment Mode 2.

FIGS. 16A and 16B are views showing a structure of a semiconductor device in Embodiment Mode 2.

FIGS. 17A to 17D are views showing a structure of a semiconductor device in Embodiment Mode 3.

FIGS. 18A to 18C are views showing a structure of a semiconductor device in Embodiment Mode 3.

FIGS. 19A and 19B are views showing a structure of a semiconductor device in Embodiment Mode 3.

FIGS. 20A and 20B are views showing a structure of a semiconductor device in Embodiment Mode 3.

FIGS. 21A and 21B are views showing a structure of a semiconductor device in Embodiment Mode 3.

FIGS. 22A to 22D are views showing a structure of a semiconductor device in Embodiment Mode 4.

FIGS. 23A and 23B are views showing a structure of a semiconductor device in Embodiment Mode 4.

FIGS. 24A and 24B are a view showing a structure of a semiconductor device in Embodiment Mode 4.

FIG. 25 is a view showing a structure of a semiconductor device in Embodiment Mode 4.

FIGS. 26A and 26B are views showing a structure of a semiconductor device in Embodiment Mode 4.

FIG. 27 is a view showing a structure of a semiconductor device in Embodiment Mode 4.

FIGS. 28A to 28E are views showing Embodiment 1.

FIG. 29 is a diagram showing a conventional structure.

FIG. 30 is a diagram showing a conventional structure.

Claims

1. A semiconductor device comprising: a power generation element;an antenna circuit;a signal processing circuit; anda battery,wherein the antenna circuit receives a first signal and transmits a second signal for transmitting data stored in the signal processing circuit;wherein in the battery, an electric power generated by the power generation element is charged; andwherein the battery supplies an electric power to the signal processing circuit.

2. The semiconductor device according to claim 1, wherein the power generation element, the antenna circuit, the signal processing circuit and the battery are formed over a substrate.

3. The semiconductor device according to claim 1, wherein the antenna circuit receives from and transmits to a reader/writer the first signal and the second signal.

4. The semiconductor device according to claim 1, wherein the power generation element is a thermoelectric element.

5. The semiconductor device according to claim 1, wherein the power generation element is a piezoelectric element.

6. The semiconductor device according to claim 1, wherein the power generation element is an element utilizing electromagnetic induction.

7. The semiconductor device according to claim 1, wherein the power generation element includes a coil and a magnetic material which moves in the coil.

8. The semiconductor device according to claim 1, wherein the battery is selected form the group consisting of a lithium ion battery, a nickel-hydrogen battery and a nickel-cadmium battery.

9. The semiconductor device according to claim 1, wherein the battery is a capacitor.

10. The semiconductor device according to claim 1, wherein the battery is an electric double layer capacitor.

11. The semiconductor device according to claim 1, wherein said semiconductor device is selected from the group consisting of an ID label, an ID tag and an ID card.

12. A semiconductor device comprising: a power generation element;an antenna circuit;a signal processing circuit; anda battery,wherein the power generation element includes a microstructure having a three-dimensional structure;wherein the antenna circuit receives a first signal and transmits a second signal for transmitting data stored in the signal processing circuit;wherein in the battery, an electric power generated by the power generation element is charged; andwherein the battery supplies an electric power to the signal processing circuit.

13. The semiconductor device according to claim 12, wherein the power generation element, the antenna circuit, the signal processing circuit and the battery are formed over a substrate.

14. The semiconductor device according to claim 12, wherein the antenna circuit receives from and transmits to a reader/writer the first signal and the second signal.

15. The semiconductor device according to claim 12, wherein the power generation element is a thermoelectric element.

16. The semiconductor device according to claim 12, wherein the power generation element is a piezoelectric element.

17. The semiconductor device according to claim 12, wherein the power generation element is an element utilizing electromagnetic induction.

18. The semiconductor device according to claim 12, wherein the power generation element includes a coil and a magnetic material which moves in the coil.

19. The semiconductor device according to claim 12, wherein the battery is selected form the group consisting of a lithium ion battery, a nickel-hydrogen battery and a nickel-cadmium battery.

20. The semiconductor device according to claim 12, wherein the battery is a capacitor.

21. The semiconductor device according to claim 12, wherein the battery is an electric double layer capacitor.

22. The semiconductor device according to claim 12, wherein said semiconductor device is selected from the group consisting of an ID label, an ID tag and an ID card.

23. A semiconductor device comprising: a power generation element;an antenna circuit;a signal processing circuit;a battery; anda booster antenna,wherein the antenna circuit receives through the booster antenna a first signal for transmitting data stored in the signal processing circuit and transmits through the booster antenna a second signal;wherein in the battery, an electric power generated by the power generation element is charged; andwherein the battery supplies an electric power to the signal processing circuit.

24. The semiconductor device according to claim 23, wherein the power generation element, the antenna circuit, the signal processing circuit, the battery and the booster antenna are formed over a substrate.

25. The semiconductor device according to claim 23, wherein the antenna circuit and receives from and transmits to a reader/writer the first signal and the second signal.

26. The semiconductor device according to claim 23, wherein the power generation element is a thermoelectric element.

27. The semiconductor device according to claim 23, wherein the power generation element is a piezoelectric element.

28. The semiconductor device according to claim 23, wherein the power generation element is an element utilizing electromagnetic induction.

29. The semiconductor device according to claim 23, wherein the power generation element includes a coil and a magnetic material which moves in the coil.

30. The semiconductor device according to claim 23, wherein the battery is selected form the group consisting of a lithium ion battery, a nickel-hydrogen battery and a nickel-cadmium battery.

31. The semiconductor device according to claim 23, wherein the battery is a capacitor.

32. The semiconductor device according to claim 23, wherein the battery is an electric double layer capacitor.

33. The semiconductor device according to claim 23, wherein said semiconductor device is selected from the group consisting of an ID label, an ID tag and an ID card.

34. A semiconductor device comprising: a power generation element;an antenna circuit;a signal processing circuit;a battery; anda booster antenna,wherein the power generation element includes a microstructure having a three-dimensional structure;wherein the antenna circuit receives through the booster antenna a first signal for transmitting data stored in the signal processing circuit and transmits through the booster antenna a second signal;wherein in the battery, an electric power obtained by the power generation element is charged; andwherein the battery supplies an electric power to the signal processing circuit.

35. The semiconductor device according to claim 34, wherein the power generation element, the antenna circuit, the signal processing circuit, the battery and the booster antenna are formed over a substrate.

36. The semiconductor device according to claim 34, wherein the antenna circuit receives from and transmits to a reader/writer the first signal and the second signal.

37. The semiconductor device according to claim 34, wherein the power generation element is a thermoelectric element.

38. The semiconductor device according to claim 34, wherein the power generation element is a piezoelectric element.

39. The semiconductor device according to claim 34, wherein the power generation element is an element utilizing electromagnetic induction.

40. The semiconductor device according to claim 34, wherein the power generation element includes a coil and a magnetic material which moves in the coil.

41. The semiconductor device according to claim 34, wherein the battery is selected form the group consisting of a lithium ion battery, a nickel-hydrogen battery and a nickel-cadmium battery.

42. The semiconductor device according to claim 34, wherein the battery is a capacitor.

43. The semiconductor device according to claim 34, wherein the battery is an electric double layer capacitor.

44. The semiconductor device according to claim 34, wherein said semiconductor device is selected from the group consisting of an ID label, an ID tag and an ID card.