Patent Application
20240282768
Various embodiments may generally relate to a semiconductor device and a method of manufacturing the same, more particularly, to a capacitor and a method of manufacturing the capacitor.
Recently, a down-scaling of a semiconductor device may be rapidly progressed due to developments of electronic technologies. Thus, patterns in an electronic device have become finer. Further, in order to improve operational reliability of the semiconductor device, various structures and methods may be developed.
In embodiments of the present disclosure, a semiconductor device may include a first capacitor and a second capacitor. The first capacitor is located at a first height from one surface. The second capacitor is spaced apart from the first capacitor and located at a second height from the one surface. Here, the second height is different from the first height. Each of the first and second capacitor includes a lower electrode, an upper electrode and a dielectric layer between the lower electrode and the upper electrode. A selected one of the lower and upper electrodes includes a first portion having a cylindrical shape including a closed lower surface and an opened upper surface and a second portion downwardly extended from the first portion of the selected one. A selected another one of the lower and upper electrodes includes a first portion having a bar shape extended into the first portion of the selected one, a second portion upwardly extended from the first portion of the selected another one, and a third portion having a disc shape between the first portion and the second portion in the selected another one.
The above and other aspects, features and advantages of the subject matter of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
Various embodiments of the present invention will be described in greater detail with reference to the accompanying drawings. The drawings are schematic illustrations of various embodiments (and intermediate structures). As such, variations from the configurations and shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, the described embodiments should not be construed as being limited to the particular configurations and shapes illustrated herein but may include deviations in configurations and shapes which do not depart from the spirit and scope of the present invention as defined in the appended claims.
The present invention is described herein with reference to cross-section and/or plan illustrations of idealized embodiments of the present invention. However, embodiments of the present invention should not be construed as limiting the inventive concept. Although a few embodiments of the present invention will be shown and described, it will be appreciated by those of ordinary skill in the art that changes may be made in these embodiments without departing from the principles and spirit of the present invention.
Referring to
Each of the capacitors CAP1, CAP2 and CAP3 may have a bar shape extended in a first direction. The capacitors CAP1, CAP2 and CAP3 may include lower electrodes LE1, LE2 and LE3, dielectric layers CS1, CS2 and CS3 and upper electrodes UE1, UE2 and UE3. The lower electrodes LE1, LE2 and LE3 may include polysilicon, metal, metal nitride, conductive metal oxide, a combination thereof, etc. For example, the lower electrodes LE1, LE2 and LE3 may include titanium (Ti), titanium nitride (TIN), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN), ruthenium (Ru), iridium (Ir), ruthenium oxide (RuO2), iridium oxide (IrO2), a combination thereof, etc. The dielectric layers CS1, CS2 and CS3 may have a single-layered structure or a multi-layered structure. The dielectric layers CS1, CS2 and CS3 may include a material having a dielectric constant higher than silicon oxide. For example, the dielectric layers CS1, CS2 and CS3 may include hafnium oxide (HfO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), niobium oxide (Nb2O5), strontium titanium oxide (SrTiO3), etc. The upper electrodes UE1, UE2 and UE3 may include (Ti), titanium nitride (TiN), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN), ruthenium (Ru), iridium (Ir), ruthenium oxide (RuO2), iridium oxide (IrO2), a combination thereof, etc.
In the various embodiments, the capacitors CAP1, CAP2 and CAP3 may be classified into a first capacitor CAP1, a second capacitor CAP2 and a third capacitor CAP3 in accordance with positions of the dielectric layers. The first capacitor CAP1 may include a first dielectric layer CS1 corresponding to a lower layer. The second capacitor CAP2 may include a second dielectric layer CS2 corresponding to a middle layer. The third capacitor CAP3 may include a third dielectric layer CS3 corresponding to an upper layer.
The capacitors CAP1, CAP2 and CAP3 may be spaced apart from each other along a second direction and a third direction. The second and third directions may be perpendicular to each other and both directions may be perpendicular to the first direction. In the various embodiments, a plurality of the first capacitors CAP1, a plurality of the second capacitors CAP2 and a plurality of third capacitors CAP3 may be spaced apart from each other along the second direction and the third direction. For example, the first capacitor CAP1, the second capacitor CAP2 and the third capacitor CAP3 in a first row may be alternately arranged by a uniform gap along the second direction. The first capacitor CAP1, the second capacitor CAP2 and the third capacitor CAP3 in a second row may be alternately arranged by a uniform gap along the second direction. The third capacitor CAP3 in the second row may be arranged to fill a space between the first capacitor CAP1 and the second capacitor CAP2 in the first row. The first capacitor CAP1 in the second row may be arranged to fill a space between the second capacitor CAP2 and the third capacitor CAP3 in the first row. The second capacitor CAP2 in the second row may be arranged to fill a space between the third capacitor CAP3 and the first capacitor CAP1 in the first row.
A position and an order of the capacitors CAP1, CAP2 and CAP3 in a third row may be substantially the same as the position and the order of the capacitors CAP1, CAP2 and CAP3 in the first row.
The first capacitor CAP1 may include the first lower electrode LE1, the first dielectric layer CS1 and the first upper electrode UE1. The first lower electrode LE1 may include a first portion 102A_L having a bar shape and a second portion 106A_L having a cylindrical shape including a closed lower surface and an open upper surface. The first upper electrode UE1 may include a first portion 112A_U having a bar shape, a second portion 120A_U having a bar shape and a third portion 128A_U having a bar shape. The first portion 112A_U of the first upper electrode UE1 may be extending centrally into the second portion 106A_L of the first lower electrode LE1 without touching the walls of the second portion 106A_L. The first dielectric layer CS1 may be arranged to fill a space between the second portion 106A_L of the first lower electrode LE1 and the first portion 112A_U of the first upper electrode UE1.
The second capacitor CAP2 may include the second lower electrode LE2, the second dielectric layer CS2 and the second upper electrode UE2. The second lower electrode LE2 may include a first portion 102B_L having a bar shape, a second portion 112B_L having a bar shape and a third portion 114B_L having a cylindrical shape including a closed lower surface and an open upper surface. The first portion 102B_L of the second lower electrode LE2 may have a height substantially the same as a height of the first portion 102A_L of the first lower electrode LE1. The second upper electrode UE2 may include a first portion 120B_U having a bar shape and a second portion 128B_U having a bar shape. The second portion 128B_U of the second upper electrode UE2 may have a height substantially the same as a height of the third portion 128A_U of the first upper electrode UE1. The first portion 120B_U of the second upper electrode UE2 may be extending centrally into the third portion 114B_L of the second lower electrode LE2. The second dielectric layer CS2 may be arranged to fill a space between the third portion 114B_L of the second lower electrode LE2 and the first portion 120B_U of the second upper electrode UE2.
The third capacitor CAP3 may include the third lower electrode LE3, the third dielectric layer CS3 and the third upper electrode UE3. The third lower electrode LE3 may include a first portion 102C_L having a bar shape, a second portion 112C_L having a bar shape, a third portion 120C_L having a bar shape and a fourth portion 122C_L having a cylindrical shape including a closed lower surface. The first portion 102C_L of the third lower electrode LE3 may have a height substantially the same as the height of the first portion 102A_L of the first lower electrode LE1 and the height of the first portion 102B_L of the second lower electrode LE2. The second portion 112C_L of the third lower electrode LE3 may have a height substantially the same as the height of the second portion 112B_L of the second lower electrode LE2. The third upper electrode UE3 may have only one portion in a bar shape which extends centrally into the fourth portion 122C_L of the third lower electrode LE3. The third dielectric layer CS3 may be arranged to fill a space between the fourth portion 122C_L of the third lower electrode LE3 and the bar shape portion of the third upper electrode UE3.
In a planar view as shown in
Referring to
A dielectric layer CS may be arranged to fill a space between the first portion LPT1 of the lower electrode LE and the first portion UPT1 of the upper electrode UE.
Referring to
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Referring to
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Referring to
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In the various embodiments, the capacitors may have various structures, not limited within the above-mentioned structures.
Hereinafter, a method of manufacturing a semiconductor device including the capacitors in accordance with embodiments may be illustrated in detail.
Referring to
Although not depicted in the drawings, underlying structures may be formed under the first insulation layer 100. The first conductive patterns 102A_L, 102B_L and 102C_L may be electrically connected with the underlying structures.
Hereinafter, for convenience of explanation, the first conductive patterns 102A_L, 102B_L and 102C_L may be referred to as a 1-1 conductive pattern 102A_L, a 1-2 conductive pattern 102B_L and a 1-3 conductive pattern 102C_L.
Referring to
Particularly, a second insulation layer 104 may be formed on the first insulation layer 100 with the first conductive patterns 102A_L, 102B_L and 102C_L. The second insulation layer 104 may be etched to form a hole configured to expose the 1-1 conductive pattern 102A_L. The hole may have a size greater than a width (or diameter) of the 1-1conductive pattern 102A_L. The second conductive pattern 106A_L may be conformally formed on an inner wall of the hole. The second conductive pattern 106A_L may have a cylindrical shape including a closed lower surface and an opened upper surface.
Here, the 1-1 conductive pattern 102A_L and the second conductive pattern 106A_L may function as a first lower electrode LE1 of a first capacitor CAP1 formed by the following processes.
Referring to
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Referring to
The 3-1 conductive pattern 112A_U may be configured to contact the first dielectric pattern 108A . The 3-2 conductive pattern 112B_L may be configured to contact the 1-2 conductive pattern 102B_L. The 3-3 conductive pattern 112C_L may be configured to contact the 1-3 conductive pattern 102C_L.
Referring to
Here, the 1-2 conductive pattern 102B_L, the 3-2 conductive pattern 112B_L and the fourth conductive pattern 114B_L may function as a second lower electrode LE2 of a second capacitor CAP2.
Referring to
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Referring to
The 5-2 conductive pattern 120B_U may be configured to contact the second dielectric layer 116B (or CS2). The 5-1 conductive pattern 120A_U may be configured to contact the 3-1 conductive pattern 112A_U. The 5-3 conductive pattern 120C_L may be configured to contact the 3-3 conductive pattern 112C_L.
Referring to
Here, the 1-3 conductive pattern 102C_L, the 3-3 conductive pattern 112C_L, the 5-3 conductive pattern 120C_L and the sixth conductive pattern 122C_L may function as a third lower electrode LE3 of a third capacitor CAP3.
Referring to
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The 7-3 conductive pattern UE3 may be configured to contact the third dielectric pattern 124C. The 7-1 conductive pattern 128A_U may be configured to contact the 5-1conductive pattern 120A_U. The 7-2 conductive pattern 128B_U may be configured to contact the 5-2 conductive pattern 120B_U.
Therefore, the first capacitor CAP1, the second capacitor CAP2 and the third capacitor CAP3 may be completed. The first capacitor CAP1 may include the first lower electrode LE1, the first dielectric pattern 108A and the first upper electrode UE1. The first lower electrode LE1 may include the 1-1 conductive pattern 102A_L and the second conductive pattern 106A_L. The first upper electrode UE1 may include the 3-1 conductive pattern 112A_U, the 5-1 conductive pattern 120A_U and the 7-1 conductive pattern 128A_U. The second capacitor
CAP2 may include the second lower electrode LE2, the second dielectric pattern 116B and the second upper electrode UE2. The second lower electrode LE2 may include the 1-2 conductive pattern 102B_L, the 3-2 conductive pattern 112B_L and the fourth conductive pattern 114B_L. The second upper electrode UE2 may include the 5-2 conductive pattern 120B_U and the 7-2 conductive pattern 128B_U. The third capacitor CAP3 may include the third lower electrode LE3, the third dielectric pattern 124C and the third upper electrode UE3. The third lower electrode LE3 may include the 1-3 conductive pattern 102C_L, the 3-3 conductive pattern 112C_L, the 5-3 conductive pattern 120C_L and the sixth conductive pattern 122C_L. The third upper electrode UE3 may include the 7-3 conductive pattern UE3.
Referring to
The memory device 1200 may be used for storing data information such as texts, graphics, software codes, etc. The memory device 1200 may include a non-volatile memory. Further, the memory device 1200 may include the capacitors of
The memory device 1200 may include memory blocks divided by slits having an insulation bridge.
The controller 1100 may be connected with a host and the memory device 1200. The controller 1100 may access the memory device 1200 in response to requests of the host. For example, the controller 1100 may control a read operation, a write operation, an erase operation, a background operation, etc., of the memory device 1200.
The controller 1100 may include a random-access memory (RAM) 1110, a central processing unit (CPU) 1120, a host interface 1130, an error correction code (ECC) circuit 1140 and a memory interface 1150.
The RAM 1110 may be used as an operation memory of the CPU 1120, a cache memory of the memory device 1200, a buffer memory between the memory device 1200 and the host, etc. The RAM 1110 may be replaced by a static random-access memory (SRAM), a read only memory (ROM), etc.
The CPU 1120 may control operations of the controller 1100. For example, the CPU 1120 may use firmwares such as a flash translation layer (FTL) stored in the RAM 1110.
The host interface 1130 may be interfaced with the host. For example, the host interface 1130 may be interfaced with the host through at least one of various protocols such as a universal serial bus (USB) protocol, a multi media card (MMC) protocol, a peripheral component interconnection (PCI) protocol, a PCI-express protocol, an advanced technology attachment (ATA) protocol, a serial-ATA protocol, a parallel-ATA protocol, a small computer small interface (SCSI) protocol, an enhanced small disk interface (ESDI) protocol, an integrated drive electronics (IDE) protocol, a private protocol, etc.
The ECC circuit 1140 may detect and correct an error in data read from the memory device 1200 using an error correction code (ECC).
The memory interface 1150 may be interfaced with the memory device 1200. For example, the memory interface 1150 may include a NAND interface, a NOR interface, etc.
The controller 1100 may further include a buffer memory configured to temporarily store data. The buffer memory may temporarily store the data transmitted to an external device through the host interface 1130. The buffer memory may temporarily store the data transmitted to the memory device 1200 through the memory interface 1150. The controller 1100 may further include a ROM configured to store code data for interfacing the controller 1100 with the host.
Therefore, the insulation bridge may cure the structural defect of the memory blocks to improve characteristics of the memory system 1000.
Referring to
The memory device 1200′ may include a non-volatile memory. Further, the memory device 1200′ may include the capacitors of
Further, the memory device 1200′ may include a multi-chip package including a plurality of memory chips. The memory chips may be divided into a plurality of groups. The groups may be communicated with the controller 1100′ through first to kth channels CH1˜CHk. The memory chip in one group may be communicated with the controller 1100′ through a common channel. The memory system 1000′ may include channels respectively connected to corresponding memory chips in the memory device 1200′.
Therefore, the positions of the dielectric layers in each of the capacitors of the memory system 1000′ may be different from each other to improve an integration degree of the capacitors.
Referring to
The memory device 2100 may store data provided through the user interface 2400, data processed by the CPU 2200, etc. Further, the memory device 2100 may be electrically coupled to the CPU 2200, the RAM 2300, the user interface 2400 and the power supply 2500 through the system bus 2600. For example, the memory device 2100 may be directly connected to the system bus 2600, or indirectly connected to the system bus 2600 through a controller. When the memory device 2100 may be directly connected to the system bus 2600, functions of the controller may be performed by the CPU 2200, the RAM 2300, etc.
The memory device 2100 may include a non-volatile memory. Further, the memory device 2100 may include the capacitors of
In various embodiments, the computing system 2000 may include a computer, a ultra mobile PC (UMPC), a workstation, a net-book, a personal digital assistant (PDA), a portable computer, a web tablet, a wireless phone, a mobile phone, a smart phone, an e-book, a portable multimedia player (PMP), a portable game device, a navigator, a black box, a digital camera, a 3-dimensional television, a digital audio recorder, a digital audio player, a digital picture recorder, a digital picture player, a digital video recorder, a digital video player, a telematics network, an RFID, etc.
Therefore, an integration degree of the capacitors may be improved to increase characteristics of the computing system 2000.
Referring to
The OS 3200 may manage the software and the hardware of the computing system 3000. The OS 3200 may control program operations of a CPU. The application 3100 may include various application programs run in the computing system 3000. The application 3100 may include a utility run by the OS 3200.
The file system 3300 may be a logical structure for managing data, files, etc., in the computing system 3000. The file system 3300 may organize the file or the data to be stored in the memory device 3500. The file system 3300 may be determined in accordance with the OS 3200 used in the computing system 3000. For example, when the OS 3200 may be the windows of the Microsoft company, the file system 3300 may include a file allocation table (FAT), an NT file system (NTFS), etc. When the OS 3200 may be in Unix/Linux, the file system 3300 may include an extended file system (EXT), a Unix file system (UFS), a journaling file system (JFS), etc.
In various embodiments, the OS 3200, the application 3100 and the file system 3300 may be represented by separate blocks in drawings. Alternatively, the OS 3200 may include the application 3100 and the file system 3300.
The translation layer 3400 may translate address into a proper shape of the memory device 3500 in response to a request of the file system 3300. For example, the translation layer 3400 may translate a logic address generated by the file system 3300 into a physical address of the memory device 3500. Mapping information of the logic address and the physical address may be stored as an address translation table. For example, the translation layer 3400 may include a flash translation layer (FTL), a universal flash storage link layer (ULL), etc.
The memory device 3500 may include a non-volatile memory device including any of the capacitors of
The application 3100, the OS 3200 and the file system 3300 may be included in the OS layer to be driven by an operation memory of the computing system 3000. The translation layer 3400 may be included in the OS layer or the controller layer.
Therefore, the computing system 3000 of may include an improved integration degree of the capacitors used therein.
The above-described embodiments are intended to illustrate and not to limit the present invention. Various alternatives and equivalents are possible. The invention is not limited by the embodiments described herein. Nor is the invention limited to any specific type of a semiconductor device. Other additions, subtractions, or modifications are obvious in view of the present disclosure and are intended to fall within the scope of the appended claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2021-0095796 | Jul 2021 | KR | national |
The present application is a continuation of U.S. patent application Ser. No. 17/565,248, filed on Dec. 29, 2021, which claims priority under 35 U.S.C. § 119(a) to Korean application number 10-2021-0095796, filed Jul. 21, 2021, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.
| Number | Date | Country | |
|---|---|---|---|
| Parent | 17565248 | Dec 2021 | US |
| Child | 18650124 | US |
