SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes a substrate, a first gate electrode, a second gate electrode, a first channel region positioned between the substrate and the first gate electrode, a second channel region positioned between the substrate and the second gate electrode, a gate insulation film positioned at least between the first channel region and the first gate electrode, and between the second channel region and the second gate electrode, a first conducting section, a second conducting section, and a third conducting section each positioned between the substrate and the gate insulation film, and an intermediate electrode electrically connected to the second gate electrode, and overlapping a part of the first gate electrode, wherein the first channel region is positioned between the first conducting section and the second conducting section, and the second channel region is positioned between the second conducting section and the third conducting section.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will now be described with reference to the accompanying drawings, wherein like numbers refer to like elements.

FIG. 1 is an equivalent circuit diagram schematically showing the configuration of a semiconductor element according to an embodiment.

FIG. 2 is a schematic plan view showing the structure of the semiconductor device according to a first embodiment.

FIG. 3 is a schematic cross-sectional view showing the structure of the semiconductor device according to the first embodiment.

FIG. 4 is a schematic plan view showing the structure of the semiconductor device according to a second embodiment.

FIGS. 5A and 5B are schematic cross-sectional views showing the structure of the semiconductor device according to the second embodiment.

Claims

1. A semiconductor device, comprising: a substrate;a first gate electrode;a second gate electrode;a first channel region positioned between the substrate and the first gate electrode;a second channel region positioned between the substrate and the second gate electrode;a gate insulation film positioned at least between the first channel region and the first gate electrode, and between the second channel region and the second gate electrode;a first conducting section positioned between the substrate and the gate insulation film;a second conducting section positioned between the substrate and the gate insulation film, the first channel region being positioned between the first conducting section and the second conducting section;a third conducting section positioned between the substrate and the gate insulation film, the second channel region being positioned between the second conducting section and the third conducting section; andan intermediate electrode electrically connected to the second gate electrode, and overlapping a part of the first gate electrode.

2. The semiconductor device according to claim 1, the shortest distance between the first conducting section and the second conducting section being greater than the shortest distance between the second conducting, section and the third conducting section.

3. The semiconductor device according to claim 1, the intermediate electrode being a metal film having an island shape.

4. The semiconductor device according to claim 1, further comprising: an interlayer insulation film positioned at least between the first gate electrode and the intermediate electrode, and between the second gate electrode and the intermediate electrode, the second gate electrode and the intermediate electrode being electrically connected to each other via a contact plug provided to the interlayer insulation film and the first gate electrode and the intermediate electrode forming a capacitor with the intervention of the interlayer insulation film.

5. The semiconductor device according to claim 1, the second gate electrode and the intermediate electrode being electrically connected to each other via a contact plug provided to the gate insulation film, and the first gate electrode and the intermediate electrode forming a capacitor with the intervention of the gate insulation film.

6. The semiconductor device according to claim 1, each of the first channel region and the second channel region including an inorganic semiconductor material, and each of the first conducting section, the second conducting section, and the third conducting section including an impurity and the inorganic semiconductor material.

7. The semiconductor device according to claim 1, each of the first channel region and the second channel region including an organic semiconductor material, and each of the first conducting section, the second conducting section, and the third conducting section including a conductive organic material.

8. The semiconductor device according to claim 1, each of the first channel region and the second channel region including an organic semiconductor material, and each of the first conducting section, the second conducting section, and the third conducting section including a metal.

9. A semiconductor device, comprising: a substrate;a first gate electrode;a second gate electrode;a first channel region positioned between the substrate and the first gate electrode;a second channel region positioned between the substrate and the second gate electrode;a gate insulation film positioned at least between the first channel region and the first gate electrode, and between the second channel region and the second gate electrode;a first conducting section positioned between the substrate and the gate insulation film;a second conducting section positioned between the substrate and the gate insulation film, the first channel region being positioned between the first conducting section and the second conducting section;a third conducting section positioned between the substrate and the gate insulation film, the second channel region being positioned between the second conducting section and the third conducting section; andan intermediate electrode overlapping a part of the first gate electrode and a part of the second gate electrode.

10. The semiconductor device according to claim 9, the shortest distance between the first conducting section and the second conducting section being greater than the shortest distance between the second conducting section and the third conducting section.

11. The semiconductor device according to claim 9, the intermediate electrode being a metal film having an island shape.

12. The semiconductor device according to claim 9, further comprising: an interlayer insulation film positioned at least between the first gate electrode and the intermediate electrode, and between the second gate electrode and the intermediate electrode, the part of the first gate electrode and the intermediate electrode forming a first capacitor with the intervention of the interlayer insulation film, and the part of the second gate electrode and the intermediate electrode forming a second capacitor with the intervention of the interlayer insulation film.

13. The semiconductor device according to claim 9, the part of the first gate electrode and the intermediate electrode forming a first capacitor with the intervention of the gate insulation film, and the part of the second gate electrode and the intermediate electrode forming a second capacitor with the intervention of the gate insulation film.

14. The semiconductor device according to claim 9, each of the first channel region and the second channel region including an inorganic semiconductor material, and each of the first conducting section, the second conducting section, the third conducting section, and the intermediate electrode including an impurity and the inorganic semiconductor material.

15. The semiconductor device according to claim 9, each of the first channel region and the second channel region including an organic semiconductor material, and each of the first conducting section, the second conducting section, the third conducting section, and the intermediate electrode including a conductive organic material.

16. The semiconductor device according to claim 9, each of the first channel region and the second channel region including an organic semiconductor material, and each of the first conducting section, the second conducting section, the third conducting section, and the intermediate electrode including a metal.

17. A semiconductor device, comprising a substrate;a first conducting section positioned over the substrate;a second conducting section positioned over the substrate;a third conducting section positioned over the substrate, the shortest distance between the first conducting section and the second conducting section being greater than the shortest distance between the second conducting section and the third conducting section;an intermediate electrode positioned over the substrate;a semiconductor film including an organic semiconductor material, and positioned at least between the first conducting section and the second conducting section, and between the second conducting section and the third conducting section;a gate insulation film positioned at least over the organic semiconductor film and over the intermediate electrode;a first gate electrode positioned at least over the gate insulation film, overlapping the semiconductor film and the intermediate electrode via the gate insulation film, and forming a first capacitor with the intermediate electrode; anda second gate electrode positioned at least over the gate insulation film, overlapping the semiconductor film and the intermediate electrode via the gate insulation film, and forming a second capacitor with the intermediate electrode.