Claims
- 1. A semiconductor device having at least one thin film transistor over a substrate, comprising:a first silicon oxynitride film formed in contact with the substrate, a second silicon oxynitride film formed in contact with the first silicon oxynitride film, and a semiconductor layer on the second silicon oxynitride film, wherein a composition ratio of nitrogen to oxygen of the first silicon oxynitride film is larger than that of the second silicon oxynitride film, and wherein a film thickness of the first silicon oxynitride film is between 50 nm and 100 nm, and a film thickness of the second silicon oxynitride film is between 30 nm and 70 nm.
- 2. A semiconductor device according to claim 1, wherein the composition ratio of nitrogen to oxygen of the first silicon oxynitride film is between 0.6 and 1.5, and the composition ratio of nitrogen to oxygen of the second silicon oxynitride film is between 0.01 and 0.4.
- 3. A semiconductor device according to claim 1, wherein a composition ratio of hydrogen to oxygen of the first silicon oxynitride film is between 0.3 and 1.5, and a composition ratio of hydrogen to oxygen of the second silicon oxynitride film is between 0.001 and 0.15.
- 4. A semiconductor device according to claim 1, wherein an oxygen concentration of the first silicon oxynitride film is between 20 atomic % and 30 atomic % and a nitrogen concentration thereof is between 20 atomic % and 30 atomic %, and an oxygen concentration of the second silicon oxynitride film is between 55 atomic % and 65 atomic % and a nitrogen concentration thereof is between 1 atomic % and 20 atomic %.
- 5. A semiconductor device according to claim 1, wherein a hydrogen concentration of the first silicon oxynitride film is between 10 atomic % and 20 atomic %, and a hydrogen concentration of the second silicon oxynitride film is between 0.1 atomic % and 10 atomic %.
- 6. A semiconductor device according to claim 1, wherein a density of the first silicon oxynitride film is between 8×1022 atoms/cm3 and 2×1023 atoms/cm3, and a density of the second silicon oxynitride film is between 6×1022 atoms/cm3 and 9×1022 atoms/cm3.
- 7. A semiconductor device according to claim 1, wherein the semiconductor device is an active matrix type liquid crystal display device.
- 8. A semiconductor device according to claim 1, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player which uses a recording medium, a digital camera, and a projector.
- 9. A semiconductor device having at least one thin film transistor over a substrate, comprising:a first silicon oxynitride film formed in contact with the substrate, a second silicon oxynitride film formed in contact with the first silicon oxynitride film, and a semiconductor layer on the second silicon oxynitride film, wherein a composition ratio of hydrogen to oxygen of the first silicon oxynitride film is larger than that of the second silicon oxynitride film, and wherein a film thickness of the first silicon oxynitride film is between 50 nm and 100 nm. and a film thickness of the second silicon oxynitride film is between 30 nm and 70 nm.
- 10. A semiconductor device according to claim 9, wherein a composition ratio of nitrogen to oxygen of the first silicon oxynitride film is between 0.6 and 1.5, and a composition ratio of nitrogen to oxygen of the second silicon oxynitride film is between 0.01 and 0.4.
- 11. A semiconductor device according to claim 9, Wherein the composition ratio of hydrogen to oxygen of the first silicon oxynitride film is between 0.3 and 1.5, and the composition ratio of hydrogen to oxygen of the second silicon oxynitride film is between 0.001 and 0.15.
- 12. A semiconductor device according to claim 9, wherein an oxygen concentration of the first silicon oxynitride film is between 20 atomic % and 30 atomic % and a nitrogen concentration thereof is between 20 atomic % and 30 atomic %, and an oxygen concentration of the second silicon oxynitride film is between 55 atomic % and 65 atomic % and a nitrogen concentration thereof is between 1 atomic % and 20 atomic %.
- 13. A semiconductor device according to claim 9, wherein a hydrogen concentration of the first silicon oxynitride film is between 10 atomic % and 20 atomic %, and a hydrogen concentration of the second silicon oxynitride film is between 0.1 atomic % and 10 atomic %.
- 14. A semiconductor device according to claim 9, wherein a density of the first silicon oxynitride film is between 8×1022 atoms/cm3 and 2×1023 atoms/cm3, and a density of the second silicon oxynitride film is between 6×1022 atoms/cm3 and 9×1022 atoms/cm3.
- 15. A semiconductor device according to claim 9, wherein the semiconductor device is an active matrix type liquid crystal display device.
- 16. A semiconductor device according to claim 9, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player which uses a recording medium, a digital camera, and a projector.
- 17. A semiconductor device having at least one thin film transistor over a substrate, comprising:a first silicon oxynitride film formed in contact with the substrate, a second silicon oxynitride film formed in contact with the first silicon oxynitride film, and a semiconductor layer on the second silicon oxynitride film, wherein an oxygen concentration of the second silicon oxynitride film is larger than that of the first silicon oxynitride film, and wherein a film thickness of the first silicon oxynitride film is between 50 nm and 100 nm, and a film thickness of the second silicon oxynitride film is between 30 nm and 70 nm.
- 18. A semiconductor device according to claim 17, wherein a composition ratio of nitrogen to oxygen of the first silicon oxynitride film is between 0.6 and 1.5, and a composition ratio of nitrogen to oxygen of the second silicon oxynitride film is between 0.01 and 0.4.
- 19. A semiconductor device according to claim 17, wherein a composition ratio of hydrogen to oxygen of the first silicon oxynitride film is between 0.3 and 1.5, and a composition ratio of hydrogen to oxygen of the second silicon oxynitride film is between 0.001 and 0.15.
- 20. A semiconductor device according to claim 17, wherein the oxygen concentration of the first silicon oxynitride film is between 20 atomic % and 30 atomic % and a nitrogen concentration thereof is between 20 atomic % and 30 atomic %, and the oxygen concentration of the second silicon oxynitride film is between 55 atomic % and 65 atomic % and a nitrogen concentration thereof is between 1 atomic % and 20 atomic %.
- 21. A semiconductor device according to claim 17, wherein a hydrogen concentration of the first silicon oxynitride film is between 10 atomic % and 20 atomic %, and a hydrogen concentration of the second silicon oxynitride film is between 0.1 atomic % and 10 atomic %.
- 22. A semiconductor device according to claim 17, wherein a density of the first silicon oxynitride film is between 8×1022 atoms/cm3 and 2×1023 atoms/cm3, and a density of the second silicon oxynitride film is between 6×1022 atoms/cm3 and 9×1022 atoms/cm3.
- 23. A semiconductor device according to claim 17, wherein the semiconductor device is an active matrix type liquid crystal display device.
- 24. A semiconductor device according to claim 17, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player which uses a recording medium, a digital camera, and a projector.
- 25. A semiconductor device having at least one thin film transistor over a substrate, comprising:a first silicon oxynitride film formed in contact with the substrate, a second silicon oxynitride film formed in contact with the first silicon oxynitride film, and a semiconductor layer on the second silicon oxynitride film, wherein a nitrogen concentration of the first silicon oxynitride film is larger than or equal to that of the second silicon oxynitride film, and wherein a film thickness of the first silicon oxynitride film is between 50 nm and 100 nm, and a film thickness of the second silicon oxynitride film is between 30 nm and 70 nm.
- 26. A semiconductor device according to claim 25, wherein a composition ratio of nitrogen to oxygen of the first silicon oxynitride film is between 0.6 and 1.5, and a composition ratio of nitrogen to oxygen of the second silicon oxynitride film is between 0.01 and 0.4.
- 27. A semiconductor device according to claim 25, wherein a composition ratio of hydrogen to oxygen of the first silicon oxynitride film is between 0.3 and 1.5, and a composition ratio of hydrogen to oxygen of the second silicon oxynitride film is between 0.001 and 0.15.
- 28. A semiconductor device according to claim 25, wherein an oxygen concentration of the first silicon oxynitride film is between 20 atomic % and 30 atomic % and the nitrogen concentration thereof is between 20 atomic % and 30 atomic %, and an oxygen concentration of the second silicon oxynitride film is between 55 atomic % and 65 atomic % and the nitrogen concentration thereof is between 1 atomic % and 20 atomic %.
- 29. A semiconductor device according to claim 25, wherein a hydrogen concentration of the first silicon oxynitride film is between 10 atomic % and 20 atomic %, and a hydrogen concentration of the second silicon oxynitride film is between 0.1 atomic % and 10 atomic %.
- 30. A semiconductor device according to claim 25, wherein a density of the first silicon oxynitride film is between 8 ×1022 atoms/cm3 and 2×1023 atoms/cm3, and a density of the second silicon oxynitride film is between 6×1022 atoms/cm3 and 9×1022 atoms/cm3.
- 31. A semiconductor device according to claim 25, wherein the semiconductor device is an active matrix type liquid crystal display device.
- 32. A semiconductor device according to claim 25, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player which uses a recording medium, a digital camera, and a projector.
- 33. A semiconductor device having at least one thin film transistor over a substrate, comprising:a first silicon oxynitride film formed in contact with the substrate, a second silicon oxynitride film formed in contact with the first silicon oxynitride film, and a semiconductor layer on the second silicon oxynitride film, wherein a hydrogen concentration of the first silicon oxynitride film is larger than or equal to that of the second silicon oxynitride film, and wherein a film thickness of the first silicon oxynitride film is between 50 nm and 100 nm, and a film thickness of the second silicon oxynitride film is between 30 nm and 70 nm.
- 34. A semiconductor device according to claim 33, wherein a composition ratio of nitrogen to oxygen of the first silicon oxynitride film is between 0.6 and 1.5, and a composition ratio of nitrogen to oxygen of the second silicon oxynitride film is between 0.01 and 0.4.
- 35. A semiconductor device according to claim 33, wherein a composition ratio of hydrogen to oxygen of the first silicon oxynitride film is between 0.3 and 1.5, and a composition ratio of hydrogen to oxygen of the second silicon oxynitride film is between 0.001 and 0.15.
- 36. A semiconductor device according to claim 33, wherein an oxygen concentration of the first silicon oxynitride film is between 20 atomic % and 30 atomic % and a nitrogen concentration thereof is between 20 atomic % and 30 atomic %, and an oxygen concentration of the second silicon oxynitride film is between 55 atomic % and 65 atomic % and a nitrogen concentration thereof is between 1 atomic % and 20 atomic %.
- 37. A semiconductor device according to claim 33, wherein the hydrogen concentration of the first silicon oxynitride film is between 10 atomic % and 20 atomic %, and the hydrogen concentration of the second silicon oxynitride film is between 0.1 atomic % and 10 atomic %.
- 38. A semiconductor device according to claim 33, wherein a density of the first silicon oxynitride film is between 8×1022 atoms/cm3 and 2×1023 atoms/cm3, and a density of the second silicon oxynitride film is between 6×1022 atoms/cm3 and 9×1022 atoms/cm3.
- 39. A semiconductor device according to claim 33, wherein the semiconductor device is an active matrix type liquid crystal display device.
- 40. A semiconductor device according to claim 33, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player which uses a recording medium, a digital camera, and a projector.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2000-062908 |
Mar 2000 |
JP |
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Parent Case Info
This application is a continuation of copending U.S. application Ser. No. 09/800,147, filed on Mar. 6, 2001.
US Referenced Citations (4)
Number |
Name |
Date |
Kind |
5643826 |
Ohtani et al. |
Jul 1997 |
A |
5923962 |
Ohtani et al. |
Jul 1999 |
A |
6096581 |
Zhang et al. |
Aug 2000 |
A |
6461899 |
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Oct 2002 |
B1 |
Foreign Referenced Citations (2)
Number |
Date |
Country |
7-130652 |
May 1995 |
JP |
2001-015764 |
Jan 2001 |
JP |
Non-Patent Literature Citations (2)
Entry |
English abstract re Japanese patent application No. 7-130652, published May 19, 1995. |
U.S. patent application No. 09/558,736 (pending) to Kitado et al, filed Apr. 26, 2000, including specification, claims, abstract, drawings and PTO filing receipt. |
Continuations (1)
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Number |
Date |
Country |
Parent |
09/800147 |
Mar 2001 |
US |
Child |
10/291081 |
|
US |