Claims
- 1. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having at least one MOSFET circuit which includes at least one p-channel MOSFET and at least one n-channel MOSFET, said MOSFET circuit having a plurality of operation modes, said MOSFET circuit being coupled to a signal line which provides a signal to said MOSFET circuit for switchably selecting a one of said plurality of MOSFET circuit operation modes in which said MOSFET circuit will operate; and
- bias generating means for supplying a bias voltage to said semiconductor substrate of said first conductivity type and varying said bias voltage in accordance with said selected one of said plurality of operation modes of said MOSFET circuit.
- 2. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- at least one well region of a second conductivity type which is selectively formed on a surface portion of said semiconductor substrate of said first conductivity type;
- a MOSFET circuit including at least one p-channel first MOSFET and at least one n-channel first MOSFET formed on said semiconductor substrate of said first conductivity type, and at least one p-channel second MOSFET and at least one n-channel second MOSFET formed on said well region of said second conductivity type, said MOSFET circuit operating at a plurality of operation modes, said MOSFET circuit being coupled to a signal line which provides a signal to said MOSFET circuit for selecting a one of said plurality of MOSFET circuit operation modes in which said MOSFET circuit will operate; and
- bias generating means for supplying a bias voltage to at least one of said semiconductor substrate of said first conductivity type and said well region of said second conductivity type, and varying said bias voltage supplied to at least one of said semiconductor substrate of said first conductivity type and said well region of said second conductivity type in accordance with said selected one of said plurality of operation modes of said MOSFET circuit.
- 3. The semiconductor device according to claim 1 or 2, wherein said bias generating means includes a substrate bias generating circuit mounted on said semiconductor substrate of said first conductivity type for changing said bias voltage.
- 4. The semiconductor device according to claim 3, further comprising an input/output circuit mounted on said semiconductor substrate of said first conductivity type for controlling said substrate bias generating circuit.
- 5. The semiconductor device according to claim 3, wherein said bias generating circuit is controlled by a signal from a device external to said semiconductor substrate of said first conductivity type.
- 6. The semiconductor device according to claim 1, wherein said bias generating means includes means for supplying said bias voltage onto said semiconductor substrate of said first conductivity type from a device external to said semiconductor substrate of said first conductivity type in accordance with said selected one of said plurality of operation modes of said MOSFET circuit.
- 7. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having at least one MOSFET circuit which includes at least one p-channel MOSFET and at least one n-channel MOSFET, said MOSFET circuit operating at a plurality of operation voltages, said MOSFET circuit being coupled to a control line, said MOSFET circuit operating at a one of said plurality of operation voltages in accordance with a control signal provided on said control line; and
- bias generating means for supplying a bias voltage to said semiconductor substrate of said first conductivity type and varying said bias voltages supplied to said semiconductor substrate of said first conductivity type in accordance with said selected one of said plurality of operation voltages of said MOSFET circuit.
- 8. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- at least one well region of a second conductivity type which is selectively formed on a surface portion of said semiconductor substrate of said first conductivity type;
- a MOSFET circuit including at least one p-channel first MOSFET and at least one n-channel first MOSFET formed on said semiconductor substrate of said first conductivity type, and at least one p-channel second MOSFET and at least one n-channel second MOSFET formed on said well region of said second conductivity type, said MOSFET circuit operating at a plurality of operation modes, said MOSFET circuit being coupled to a control line, said MOSFET circuit operating at a one of said plurality of operation voltages in accordance with a control signal provided on said control line; and
- bias generating means for supplying a bias voltage to at least one of said semiconductor substrate of said first conductivity type and said well region of said second conductivity type, and varying said bias voltage supplied to at least one of said semiconductor substrate of said first conductivity type and said well region of said second conductivity type in accordance with said selected one of said plurality of operation voltages of said MOSFET circuit.
- 9. The semiconductor device according to claim 7 or 8, wherein said bias generating means includes a substrate bias generating circuit mounted on said semiconductor substrate of said first conductivity type for changing said bias voltage.
- 10. The semiconductor device according to claim 9, further comprising a detection circuit which is mounted on said semiconductor substrate of said first conductivity type, for detecting said operation voltages of said main circuit and controlling said substrate bias generating circuit.
- 11. The semiconductor device according to claim 7, wherein said bias generating means includes means for supplying said bias voltage onto said semiconductor substrate of said first conductivity type in accordance with said selected one of said plurality of operation modes of said circuit.
- 12. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having at least one MOSFET circuit which includes at least one p-channel MOSFET and at least one n-channel MOSFET, and having a first circuit unit operating at a first voltage and a second circuit unit operating at a second voltage lower than said first voltage, said second circuit unit having a plurality of operation modes; and
- bias generating means for supplying a bias voltage to said semiconductor substrate of said first conductivity type, said bias generating means varying said bias voltage in accordance with a particular one of said plurality of operation modes in which said second unit is operating, said particular one of said plurality of operation modes being selected by a signal provided to said at least one MOSFET circuit.
- 13. The semiconductor device according to claim 12, said bias generating means includes a substrate bias generating circuit mounted on said semiconductor substrate of said first conductivity type for changing said bias voltage.
- 14. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having at least one MOSFET circuit which includes at least one p-channel MOSFET and at least one n-channel MOSFET, and having a first circuit unit operating at a first voltage and a second circuit unit operating at a second voltage lower than said first voltage, said second circuit operating at a plurality of operation voltages, said second circuit being coupled to a signal line which provides a signal to said second circuit for selecting a one of said plurality of second circuit operation modes in which said second circuit will operate; and
- bias generating means for supplying a bias voltage to said semiconductor substrate of said first conductivity type, and varying said bias voltage in accordance with said selected one of said plurality of operation voltages of said second circuit unit.
- 15. The semiconductor device according to claim 14, said bias generating means includes a substrate bias generating circuit mounted on said semiconductor substrate of said first conductivity type for changing said bias voltage.
- 16. The semiconductor device according to claim 2, wherein said bias generating means includes means for supplying said bias voltage onto at least one of said semiconductor substrate of said first conductivity type and said well region of said second conductivity type from a device external to said semiconductor substrate of said first conductivity type in accordance with said selected one of said plurality of operation modes of said MOSFET circuit.
- 17. The semiconductor device according to claim 8, wherein said bias generating means includes means for supplying said bias voltage onto at least one of said semiconductor substrate of said first conductivity type and said well region of said second conductivity type in accordance with said selected one of said plurality of operation voltages of said MOSFET circuit.
Priority Claims (1)
Number |
Date |
Country |
Kind |
4-141505 |
Jun 1992 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/071,305, filed Jun. 2, 1993, now abandoned.
US Referenced Citations (4)
Foreign Referenced Citations (4)
Number |
Date |
Country |
0222472 |
May 1987 |
EPX |
0469587 |
Feb 1992 |
EPX |
3009447 |
Sep 1980 |
DEX |
8905545 |
Jun 1989 |
WOX |
Continuations (1)
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Number |
Date |
Country |
Parent |
71305 |
Jun 1993 |
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