Semiconductor device

Information

  • Patent Grant
  • D900759
  • Patent Number
    D900,759
  • Date Filed
    Monday, April 29, 2019
    5 years ago
  • Date Issued
    Tuesday, November 3, 2020
    4 years ago
  • US Classifications
    Field of Search
    • US
    • D10 80
    • D10 103
    • D13 110
    • D13 133
    • D13 139
    • D13 154
    • D13 173
    • D13 182
    • D14 217
    • D14 432
    • D14 433
    • CPC
    • H01L20/4238
    • H01L23/528
    • H01L29/0696
    • H01L29/1095
    • H01L29/417
    • H01L29/66068
    • H01L29/1608
    • H01L29/7395
    • H01L29/7802
    • H01L29/66325
    • H01L29/66348
    • H01L29/161
    • H01L29/162
    • H01L16/163
    • H01L29/164
    • H01L29/165
    • H01L29/166
    • H01L29/167
    • H01L21/18
    • H01L21/19
    • H01L21/20
    • H01L21/21
    • H01L21/22
    • H01L21/23
    • H01L21/24
    • H01L21/25
    • H01L21/26
    • H01L21/27
    • H01L21/28
    • H01L21/29
    • H01L21/30
  • International Classifications
    • 1303
    • Term of Grant
      15Years
Abstract
Description


FIG. 1 is a front, bottom and right side perspective view of a semiconductor device showing our new design;



FIG. 2 is a front view thereof;



FIG. 3 is a rear view thereof;



FIG. 4 is a top plan view thereof;



FIG. 5 is a bottom plan view thereof;



FIG. 6 is a right side view thereof, the left side view being a mirror image of FIG. 6; and,



FIG. 7 is an enlarged cross-sectional view taken along line 7-7 in FIG. 2 showing a portion indicated by lines 7-7 in FIG. 5.


Claims
  • The ornamental design for a semiconductor device, as shown and described.
Priority Claims (1)
Number Date Country Kind
2018-024474 Nov 2018 JP national
US Referenced Citations (24)
Number Name Date Kind
D523403 Mizukoshi Jun 2006 S
D648290 Mori Nov 2011 S
D674760 Mochizuki Jan 2013 S
D717254 Jo Nov 2014 S
D729250 Han May 2015 S
D777124 Hasegawa Jan 2017 S
D783550 Hasegawa Apr 2017 S
D796978 Kawashima Sep 2017 S
D839220 Domon Jan 2019 S
D845921 Saito Apr 2019 S
D859334 Yokoyama Sep 2019 S
D864884 Yoneyama Oct 2019 S
10510626 Braun Dec 2019 B2
D873227 Yoneyama Jan 2020 S
10546825 Hsu Jan 2020 B2
10553559 Besshi Feb 2020 B2
10557191 Nishida Feb 2020 B2
10600744 Chikamatsu Mar 2020 B2
10600789 Ha Mar 2020 B2
10605828 Kung Mar 2020 B2
10636703 Jeong Apr 2020 B2
10644115 Oshima May 2020 B2
10651050 Nakano May 2020 B2
10672878 Ohoka Jun 2020 B2
Foreign Referenced Citations (3)
Number Date Country
1162634 Jan 2003 JP
1163101 Jan 2003 JP
1563812 Nov 2016 JP
Non-Patent Literature Citations (2)
Entry
Office Action issued for Japanese Patent Application No. 2018-024474, dated Mar. 1, 2019, 3 pages including abridged English translation.
“Integrated circuit device,” Toshiba Semiconductor Company, Japan, JPO Publicly Known Design No. HC2000747100, date of making available to the public: Jun. 11, 2008, 5 pages including English translation of bibliographic data.