SEMICONDUCTOR DEVICES WITH HIGH CURRENT CAPABILITY FOR ELECTROSTATIC DISCHARGE OR SURGE PROTECTION

Abstract

Semiconductor devices with high current capability for ESD or surge protection are described. The semiconductor device includes multiple n-type semiconductor regions in a p-type semiconductor layer. Each of the n-type semiconductor regions may have a footprint with a circular, oval, or obround shape. Moreover, a boundary of the footprint may be spaced apart from an isolation structure that surrounds the p-type semiconductor layer. The n-type semiconductor regions may be coupled to a terminal through individual groups of contacts that are connected to the n-type semiconductor regions, respectively. Additionally, or alternatively, the p-type semiconductor layer surrounded by the isolation structure may not include any re-entrant corner.

Description

TECHNICAL FIELD

The present disclosure generally relates to the field of semiconductor devices, and more particularly to semiconductor devices with high current capability for electrostatic discharge or surge protection.

BACKGROUND

Integrated circuits (ICs) can be subject to electrostatic discharge (ESD) or surge events. ESD events typically occur when the ICs are brought in contact with or close to another object. Surge events typically refer to situations in which ICs experience undesirable voltage increases for relatively longer periods than the ESD events. Various protection devices can be coupled with ICs to protect them by providing current paths during the ESD or surge events. It would be desirable for the protection devices to be able to safely dissipate high current without incurring damage. During normal operations of the ICs, the protection devices are inactive so as not to interfere with the normal operations. Although the protection devices are inactive (e.g., a diode under a reverse bias condition), their presence tends to increase parasitic capacitance for the ICs. It would be desirable for the protection devices to have low capacitance.

SUMMARY

The present disclosure describes ESD or surge protection devices with high current capability. Moreover, the protection devices include diodes with low capacitance. This summary is not an extensive overview of the disclosure, and is neither intended to identify key or critical elements of the disclosure, nor to delineate the scope thereof. Rather, the primary purpose of the summary is to present some concepts of the disclosure in a simplified form as a prelude to a more detailed description that is presented later.

In some embodiments, a semiconductor device may include a p-type semiconductor layer including a plurality of n-type semiconductor regions, where each of the n-type semiconductor regions has: a footprint with a circular, oval, or obround shape; a boundary of the footprint spaced apart from an isolation structure that surrounds the p-type semiconductor layer; and a group of contacts connected to the n-type semiconductor region, where individual groups of contacts of the n-type semiconductor regions are coupled to a terminal.

In some embodiments, a semiconductor device includes an n-type substrate; an n-type layer on the substrate; a p-type layer over the n-type layer; and a first area including a plurality of n-type regions in the p-type layer, where each of the n-type regions has: a footprint with a circular, oval, or obround shape; a boundary of the footprint spaced apart from a first isolation structure that surrounds the first area; and a first group of contacts connected to the n-type region, where individual first groups of contacts of the n-type regions are coupled to a terminal.

In some embodiments, a semiconductor device includes an n-type substrate; an n-type layer on the substrate; a p-type layer over the n-type layer; a first low capacitance (LC) diode area; a second LC diode area located at a first side of the first LC diode area; and a third LC diode area located at a second side of the first LC diode area opposite to the first side, where: each of the first, second, and third LC diode areas includes a plurality of n-type regions in the p-type layer, each of the n-type regions having: a footprint with a circular, oval, or obround shape; a boundary of the footprint spaced apart from an isolation structure that surrounds the LC diode area; and a first group of contacts connected to the n-type region, where individual first groups of contacts of the n-type regions are coupled to each other.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B illustrate schematic diagrams of a semiconductor device in plan and cross-sectional views in accordance with embodiments of the present disclosure;

FIGS. 2A through 2C illustrate schematic diagrams of a semiconductor device in plan and cross-sectional views in accordance with embodiments of the present disclosure;

FIG. 3 illustrates a schematic diagram and an equivalent circuit diagram of a semiconductor device in accordance with embodiments of the present disclosure;

FIGS. 4A and 4B illustrate schematic diagrams of semiconductor devices in accordance with embodiments of the present disclosure; and

FIGS. 5A and 5B illustrate schematic diagrams and an equivalent circuit diagram of semiconductor devices in accordance with embodiments of the present disclosure.

DETAILED DESCRIPTION

The present disclosure is described with reference to the attached figures. The components in the figures are not drawn to scale. Instead, emphasis is placed on clearly illustrating overall features and the principles of the present disclosure. Numerous specific details and relationships are set forth with reference to example embodiments of the figures to provide an understanding of the disclosure. It is to be understood that the figures and examples are not meant to limit the scope of the present disclosure to such example embodiments, but other embodiments are possible by way of interchanging or modifying at least some of the described or illustrated elements. Moreover, where elements of the present disclosure can be partially or fully implemented using known components, those portions of such components that facilitate an understanding of the present disclosure are described, and detailed descriptions of other portions of such components are omitted so as not to obscure the disclosure.

Various structures disclosed herein can be formed using semiconductor process techniques. Layers including a variety of materials can be formed over a substrate, for example, using deposition techniques (e.g., chemical vapor deposition, physical vapor deposition, atomic layer deposition, spin coating, plating), thermal process techniques (e.g., oxidation, nitridation, epitaxy), and/or other suitable techniques. Similarly, some portions of the layers can be selectively removed, for example, using etching techniques (e.g., plasma (or dry) etching, wet etching), chemical mechanical planarization, and/or other suitable techniques, some of which may be combined with photolithography steps.

The semiconductor devices, integrated circuits, or IC components described herein may be formed on a semiconductor substrate (or die) including various semiconductor materials, such as silicon, germanium, silicon-germanium alloy, gallium arsenide, gallium nitride, silicon carbide, or the like. In some cases, the substrate refers to a semiconductor wafer. The conductivity (or resistivity) of the substrate (or regions of the substrate) can be controlled by doping techniques using various chemical species (which may also be referred to as dopant atoms) including, but not limited to, boron, indium, arsenic, or phosphorus. Doping may be performed during the initial formation or growth of the substrate (or an epitaxial layer grown on the substrate), by ion-implantation, or other suitable doping techniques.

As used herein, terms such as “first” and “second” are used to arbitrarily distinguish between the elements such terms describe. Thus, these terms in the description and in the claims are not intended to indicate temporal or other prioritization of such elements. Moreover, terms such as “front,” “back,” “top,” “bottom,” “over,” “under,” “vertical,” “horizontal,” “lateral,” “down,” “up,” “upper,” “lower,” or the like, are used to refer to relative directions or positions of features in the semiconductor devices in view of the orientation shown in the figures. For example, “upper” or “uppermost” can refer to a feature positioned closer to the top of a page than other features. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the technology described herein are, for example, capable of operation in other orientations than those illustrated or otherwise described herein.

Diodes are used in a variety of protection devices against ESD or surge events. Typically, silicon-controlled rectifier (SCR) or bipolar avalanche phenomena including one or more pn junctions provide low resistance current-voltage (I-V) characteristics suitable for ESD or surge protection. For example, a bidirectional protection diode configuration includes back-to-back diodes (e.g., a D1-Z1 diode with diodes D1 and Z1 having a common anode) of a unit cell combined with a forward biased diode (e.g., a diode D2) of another unit cell next to the unit cell to provide a current path during ESD or surge events. Such a configuration may facilitate amplifying the avalanche current based on the bipolar transistor gain of the back-to-back D1-Z1 diode (e.g., open-base npn transistor).

It is common practice to increase areas of the protection devices to improve their performance - e.g., to increase amounts of current (e.g., ESD current or surge current) for the protection devices to safely dissipate. Increasing device areas, however, may not lead to increased current handling capability in some instances. For example, localized current crowding phenomena (which may be referred to as hot spots) may hinder the entire device area from uniformly participating in conducting the current. In some cases, enhanced avalanche breakdown phenomena near isolation regions (e.g., trench isolation regions) of the protection devices may worsen the localized current crowding. Additionally, or alternatively, layout features in protection device areas may create one or more re-entrant corners, which in turn may exacerbate the localized current crowding. The localized current crowding may lead to thermal runaway phenomena that tend to permanently damage the protection devices by melting localized regions of the device area. As such, achieving uniform distribution of the current throughout the device area would be beneficial to improve current handling capability of the protection devices.

The present disclosure describes semiconductor devices with high current capability for ESD or surge protection. Such devices (e.g., diodes) may include multiple n-type semiconductor regions in a p-type semiconductor layer. Each of the n-type semiconductor regions may have a footprint with a circular, oval, or obround shape. Moreover, a boundary of the footprint may be spaced apart from an isolation structure that surrounds the p-type semiconductor layer. The n-type semiconductor regions may be coupled to a terminal through individual groups of contacts that are connected to the n-type semiconductor regions, respectively. Additionally, or alternatively, the p-type semiconductor layer surrounded by the isolation structure may not include any re-entrant corner - i.e., the area occupied by the p-type semiconductor layer without an interior angle greater than 180 degrees.

FIGS. 1A and 1B illustrate schematic diagrams of a semiconductor device 100 in accordance with embodiments of the present disclosure. FIG. 1A is a plan view of the semiconductor device 100, which may be regarded as a composite layout of the semiconductor device 100; FIG. 1B is a cross-sectional view of the semiconductor device 100 taken across an imaginary line AA′ as marked in FIG. 1A. These figures are described concurrently in the following discussion.

The semiconductor device 100 includes an n-type substrate 105. In some embodiments, the n-type substrate 105 may have an average dopant density (e.g., phosphorus or arsenic concentration) greater than 1 × 10¹⁸ cm^-3. In some embodiments, a dynamic resistance (Ron) of the semiconductor device 100 may depend on the dopant density of the substrate 105 – e.g., the greater dopant density, the less Ron. Moreover, current spreading capability during ESD or surge events throughout the semiconductor device 100 may become enhanced with higher dopant concentration of the substrate 105. In some embodiments, the substrate 105 can have an average dopant density exceeding 5 × 10¹⁹ cm^-3. The substrate 105 may be, for example, part of a bulk silicon wafer.

The semiconductor device 100 includes an n-type semiconductor layer 110 (e.g., a crystalline silicon layer) disposed on the substrate 105. In some embodiments, the n-type semiconductor layer 110 has an average dopant density (e.g., phosphorus and/or arsenic concentration) less than 1 × 10¹⁶ cm^-3. As such, the n-type semiconductor layer 110 may be referred to as a lightly doped n-type semiconductor layer – i.e., having a relatively less dopant concentration when compared to the substrate 105. In some embodiments, the n-type semiconductor layer 110 may be 1 to 5 micrometers (µm) thick. The n-type semiconductor layer 110 may be an epitaxial layer formed on the substrate 105.

Additionally, the semiconductor device 100 includes a p-type semiconductor layer 115 disposed over the n-type semiconductor layer 110. The p-type semiconductor layer 115 has a surface 116 facing away from the substrate 105. In some embodiments, the p-type semiconductor layer 115 has an average dopant density (e.g., boron and/or indium concentration) less than 1 × 10¹⁵ cm^-3. As such, the p-type semiconductor layer 115 may be referred to as a lightly doped p-type semiconductor layer. In some embodiments, the p-type semiconductor layer 115 may be 3 to 8 µm thick. The p-type semiconductor layer 115 may be an epitaxial layer formed on the n-type semiconductor layer 110. In some embodiments, the p-type dopant density at or near the surface 116 may be increased greater than the average dopant density. For example, p-type dopant atoms may be added after forming the p-type semiconductor layer 115 – e.g., by performing a blanket ion-implantation step after the epitaxial growth process forming the p-type semiconductor layer 115. As a result, the p-type semiconductor layer 115 may include a p-type surface region 117 with the p-type dopant density of approximately 1 × 10¹⁶ cm^-3 or less. The increased dopant density at or near the surface 116 is expected to reduce likelihood of forming a depletion layer at or near the surface 116, which may result from electric charge present in a dielectric layer (e.g., an oxide layer) above the surface 116.

The semiconductor device 100 includes a first diode 125 in a first diode area 126. The first diode area 126 is surrounded by an isolation area 140a. The first diode 125 includes a p-type buried region 130 extended from the p-type semiconductor layer 115 toward the substrate 105. The p-type buried region 130 may terminate within the n-type semiconductor layer 110. As such, the p-type buried region 130 may not directly contact the substrate 105.

In some embodiments, the p-type buried region 130 can be formed by performing ion-implantation (i.e., implanting p-type dopant atoms, such as boron and/or indium) in the area corresponding to the first diode 125 after forming the n-type semiconductor layer 110 – e.g., after growing an n-type epitaxial layer on the substrate 105. After the ion-implantation step, the p-type semiconductor layer 115 can be formed – e.g., growing a p-type epitaxial layer on the n-type semiconductor layer 110 including the implanted dopant atoms. While the p-type semiconductor layer 115 is being formed (e.g., during the epitaxial growth process forming the p-type semiconductor layer 115), the implanted dopant atoms can spread (e.g., through diffusion process) into the n-type semiconductor layer 110 and into the p-type semiconductor layer 115 as shown in FIG. 1B. In some embodiments, the p-type buried region 130 has a dopant concentration (e.g., boron and/or indium concentration) of at least 1×10¹⁷ cm^-3.

The first diode 125 also includes an n-type region 135 extended from the surface 116 toward the substrate 105 and terminated above the p-type buried region 130. As depicted in FIG. 1A, the n-type region 135 occupies substantially the entire first diode area 126 except the space (S denoted in FIGS. 1A/1B) between the n-type region 135 and the isolation area 140a. In some embodiments, the p-type semiconductor layer 115 corresponding to the space may include the p-type surface region 117 – e.g., as a result of the blanket ion-implantation step performed after forming the p-type semiconductor layer 115. In some embodiments, the n-type region 135 has a dopant concentration (e.g., phosphorus and/or arsenic concentration) of at least 1×10¹⁶ cm^-3 or greater. In some embodiments, the n-type region 135 has a graded dopant profile including an inner portion and an outer portion. The n-type region 135 may be separated from the p-type buried region 130 by approximately 2 µm or more. The inner portion may have an average dopant concentration (e.g., phosphorus and/or arsenic concentration) ranging from 1×10¹⁷ cm^-3 to 3×10¹⁹ cm^-3. The outer portion may have an average dopant concentration (e.g., phosphorus and/or arsenic concentration) ranging from 1×10¹⁶ cm^-3 to 1×10¹⁷ cm^-3.

The n-type region 135 is in contact with the p-type semiconductor layer 115, which forms a first pn junction (e.g., the diode D1 depicted in FIG. 1B) of the first diode 125. The first pn junction is formed at a first depth (d1 denoted in FIG. 1B) from the surface 116. The first pn junction is expected to form a relatively wide depletion region under a reverse bias condition (e.g., during normal operations of a device under protection (DUP) coupled with the semiconductor device 100), for example, in view of the first pn junction formed across the n-type region 135 (or the outer portion of the n-type region 135 in some embodiments) and the lightly doped p-type semiconductor layer 115. The wide depletion region is expected to provide relatively low capacitance coupled to the DUP, which may be advantageous to maintain the integrity of signals that the DUP manages. Accordingly, the first diode 125 may be referred to as a low capacitance (LC) diode.

As depicted in FIG. 1B, the p-type buried region 130 may have an interface contacting the n-type semiconductor layer 110. The interface between the p-type buried region 130 and the n-type semiconductor layer 110 forms a second pn junction (e.g., the diode Z1 depicted in FIG. 1B) of the first diode 125. The second pn junction is formed at a second depth (d2 denoted in FIG. 1B) from the surface 116, which is greater than the first depth. As such, a portion of the p-type semiconductor layer 115 located between the first and second pn junctions forms a common anode for the first and second pn junctions – e.g., a common anode for the diode D1 and the diode Z1. In this manner, the first diode 125 may include a back-to-back D1-Z1 diode that the diode D1 and the diode Z1 forms.

The second pn junction (the diode Z1) can be configured to breakdown under a reverse bias condition (e.g., at a reverse bias breakdown voltage) to conduct current – e.g., avalanche current during ESD or surge events. The reverse bias breakdown voltage may be related to working voltages of the protection devices, which can be determined to be less than the reverse bias breakdown voltage. The working voltages of the protection devices may be regarded as a parameter to consider in selecting a proper protection device based on operating conditions of the DUP. For example, the signals that the DUP handles may not exceed the working voltage of the protection device. In other words, the protection devices with greater reverse bias breakdown voltages (i.e., greater working voltages) can provide protection for the DUPs handling greater signal voltage ranges.

The semiconductor device 100 includes a second diode 145 in a second diode area 146. The second diode area 146 is surrounded by an isolation area 140b. The second diode 145 includes a p-type region 150 extended from the surface 116 toward the substrate 105. The p-type region 150 terminates within the p-type semiconductor layer 115. In some embodiments, the p-type region 150 has a dopant concentration (e.g., boron and/or indium concentration) of at least 1×10¹⁷ cm^-3. The second diode 145 includes a third pn junction (e.g., the diode D2 depicted in FIG. 1B), which is formed across the p-type semiconductor layer 115 and the n-type semiconductor layer 110. The third pn junction is formed at a third depth (d3 denoted in FIG. 1B) from the surface 116, which is greater than the first depth (d1) and less than the second depth (d2).

The n-type region 135 of the first diode 125 is connected to contacts 180 that are coupled to a terminal 160 (a first conductive structure). Similarly, the p-type region 150 of the second diode 145 is connected to contacts 185 that are coupled to a terminal 165 (a second conductive structure). The n-type substrate 105 provides a common terminal for both the first diode 125 and the second diode 145. The first diode 125 may be regarded as an open-base npn bipolar transistor including the n-type region 135 (emitter), the p-type layer 115 and the p-type buried region 130 (base), and the n-type layer 110 (collector). The emitter is connected to the terminal 160, and the collector is connected to the n-type substrate 105 that is coupled to the second diode 145, which is in turn, connected to the terminal 165.

As described above, the semiconductor device 100 includes the isolation areas 140 (also identified individually as isolation areas 140a and 140b in FIG. 1A) – e.g., the isolation area 140a surrounding the first diode 125 (or the first diode area 126), the isolation area 140b surrounding the second diode 145 (or the second diode area 146). The isolation areas 140 include isolation structures 141 (also identified individually as isolation structures 141a through 141c depicted in FIG. 1B). The isolation structures 141 extend from the surface 116 past an interface between the n-type semiconductor layer 110 and the substrate 105. Moreover, the semiconductor device 100 may include another isolation area 190 that surrounds both the first diode 125 (and the isolation area 140a) and the second diode 145 (and the isolation area 140b). The isolation area 190 may be referred to as a termination isolation area for the semiconductor device 100. In some embodiments, the isolation area 190 includes isolation structures formed concurrently with the isolation structures 141.

In some embodiments, the isolation structures 141 can be formed by trench isolation techniques. For example, the isolation structures 141 may be formed by etching trenches through the p-type semiconductor layer 115 (and the p-type buried region 130 of the first diode 125), the n-type semiconductor layer 110, and into the substrate 105. Depths of the trenches may range from 5 to 15 µm, or even greater (e.g., 20 µm). Accordingly, the isolation areas 140 may be referred to as deep trench isolation (DTI) areas. Similarly, the isolation structures 141 may be referred to as trench isolation structures, DTI structures, or dielectric isolation structures. In some embodiments, the isolation structures 141 include a dielectric liner 142 formed on the trench surface (e.g., sidewall and bottom of the trench) and a conductive material 143 (e.g., poly-silicon) formed on the dielectric liner 142. The conductive material may be dielectrically isolated from other structures (or components) outside the isolation structure 141.

In some embodiments, the isolation structures 141 can be formed after forming the n-type region 135 and/or the p-type region 150 in the p-type semiconductor layer 115. For example, after forming the p-type semiconductor layer 115 (e.g., by forming the p-type epitaxial layer on the n-type semiconductor layer 110), photolithography steps can define the n-type region 135 (or the p-type region 150) followed by ion-implantation steps to introduce n-type dopant atoms for the n-type region 135 (or p-type dopant atoms for the p-type region 150) Subsequently, the isolation structures 141 can be formed as described above –e.g., etching the trench into the substrate 105, forming the dielectric liner 142, and forming the conductive material 143 on the dielectric liner 142.

In other embodiments, the isolation structures 141 can be formed before forming the n-type region 135 and/or the p-type region 150 in the p-type semiconductor layer 115. For example, the isolation structures 141 can be formed as described above after forming the p-type semiconductor layer 115 (e.g., by forming the p-type epitaxial layer on the n-type semiconductor layer 110). Subsequently, photolithography steps can define the n-type region 135 (or the p-type region 150) followed by ion-implantation steps to introduce n-type dopant atoms for the n-type region 135 (or p-type dopant atoms for the p-type region 150) to form the n-type region 135 and the p-type region 150.

During operation of the semiconductor device 100 (e.g., during ESD or surge events), the second diode 145 may be forward biased – e.g., the terminal 165 at a greater voltage than the terminal 160. When the Z1 diode of the first diode 125 undergoes avalanche breakdown, current 170 flows between the terminals 160 and 165, thereby “clamping” the voltage difference between the first and second terminals to protect the DUP coupled to the semiconductor device 100.

Without being bound by the theory, as the current 170 tends to take shorter paths to flow between the terminals 160 and 165, the current 170 may start to flow in a portion of the first diode 125 generally close to the second diode 145. Such uneven distribution of the current 170 may be exacerbated in view of a portion of the second pn junction adjacent to the isolation structure (indicated with a circle T in FIG. 1B), which may be regarded to have a lower breakdown voltage than other portion of the second pn junction. The lower breakdown voltage may be a result of greater impact ionization occurring adjacent to the isolation structure, which may be attributable to the dielectric liner 142 sustaining part of the ESD (or surge) voltage capacitively coupled to the conductive material 143 (e.g., poly-silicon). In other words, the portion of the second pn junction adjacent to the isolation structure may experience the avalanche breakdown ahead of the other portion of the second pn junction.

Once the portion of the second pn junction adjacent to the isolation structure “turns on” (undergoing avalanche breakdown), the portion tends to remain “on” (or to become even more conductive) as the other portions of the second pn junction “turns on” (undergoing avalanche breakdown) to participate in dissipating the current 170 throughout the first diode 125. As such, although the contacts 180 distributed across the n-type region 135 may establish constant electric potential throughout the n-type region 135, the current conduction in the first diode 125 may not be evenly distributed. FIG. 1A depicts a “hot” region H of the n-type region 135, which is located relatively closer to the p-type region 150 than a “cold” region C of the n-type region 135. In other words, the region H may be expected to conduct more avalanche current than the region C during the operation of the semiconductor device 100.

Moreover, the first diode area 126 includes a re-entrant corner R as indicated in FIG. 1A. The re-entrant corner R corresponds to a portion of the first diode area 126 with an interior angle greater than 180 degrees. Without being bound by the theory, the curved profile of the first diode area 126 (or of the n-type region 135) at the re-entrant corner R may cause electric field to concentrate there, which may lead to “hot spots” to develop at the re-entrant corner. Accordingly, the re-entrant corner R may worsen the uneven distribution of the avalanche current conduction during the operation of the semiconductor device 100, which may result in premature failures at lower ESD ratings than expected.

FIGS. 2A through 2C illustrate schematic diagrams of a semiconductor device 200 in accordance with embodiments of the present disclosure. FIGS. 2A and 2B are plan views of the semiconductor device 200, which may be regarded as composite layouts of the semiconductor device 200; FIG. 2C is a cross-sectional view of the semiconductor device 200 taken across an imaginary line BB′ as marked in FIG. 2A. The semiconductor device 200 is generally similar to the semiconductor device 100 described with reference to FIGS. 1A and 1B, and therefore like reference numbers refer to like components in FIGS. 1A and 1B. FIGS. 2A through 2C are described concurrently in the following discussion.

The semiconductor device 200 includes a first diode 225 (e.g., LC diode) in the first diode area 126. The first diode 225 includes multiple n-type regions 235 (also identified individually as n-type regions 235a through 235d in FIG. 2C) distributed within the first diode area 126. The first diode 225 may be regarded the same as the first diode 125 except the solid n-type region 135 replaced with the multiple n-type regions 235 (which may also be referred to as a multi-fingered, partitioned, split, or distributed n-type region). In some embodiments, individual n-type regions 235 may include a graded dopant profile with an inner portion and an outer portion similar to the graded dopant profile of the n-type region 135 described with reference to FIGS. 1A/1B.

In some embodiments, the p-type semiconductor layer 115 corresponding to the spaces between individual n-type regions 235 (and the space between the n-type regions 235 and the isolation area 140a as denoted S in FIG. 2B) may include the p-type surface region 117 – e.g., as a result of the blanket ion-implantation step performed after forming the p-type semiconductor layer 115. The increased dopant density of the p-type surface regions 117 at or near the surface 116 is expected to reduce likelihood of forming a depletion layer at or near the surface 116, which may result from electric charge that may be present in a dielectric layer (e.g., an oxide layer) above the surface 116. Such a depletion layer, if formed, may increase the capacitance of the semiconductor device 200 – e.g., the capacitance associated with the first diode 225.

Each one of the multiple n-type regions 235 has a horizontal cross-sectional area parallel to the surface 116 of the p-type semiconductor layer 115 (e.g., a footprint) with a shape of a circle as depicted in FIGS. 2A/2B. In some embodiments, the footprint may be an oval or obround shape. Such a shape of the individual n-type regions 235 may be suitable to avoid sharp corners in the n-type regions 235 – e.g., to avoid electric field being concentrated at the sharp corners. Additionally, boundaries of the footprints are spaced apart from an isolation structure (e.g., the isolation structure 141a).

Each one of the multiple n-type semiconductor regions 235 is connected to a group of contacts 180 as shown in FIGS. 2B/2C. FIG. 2B illustrates that overall distribution of the contacts 180 within each n-type semiconductor region 235 (e.g., a contour or an outline of the contacts 180 in the n-type semiconductor region 235) may resemble the shape of the footprint of the n-type semiconductor region 235 – e.g., a circular, oval, or obround shape. Moreover, individual groups of the contacts 180 connected to the n-type semiconductor regions 235 are connected to each other. In other words, the multiple n-type regions 235 are configured to couple to a terminal or a first conductive structure (e.g., the terminal 160) through the groups of contacts 180.

The multiple n-type semiconductor regions 235 form multiple first pn junctions (also identified individually as diodes D1a through D1d in FIG. 2C) at the first depth (denoted as d1 in FIG. 2C) from the surface 116 of the p-type semiconductor layer 115. The first diode 225 may be regarded as an open-base npn bipolar transistor including the multiple n-type semiconductor regions 235 (multi-fingered emitter), the p-type layer 115 and the p-type buried layer 130 (base), and the n-type layer 110 (collector). The multi-fingered emitter is connected to the terminal 160, and the collector is connected to the n-type substrate 105 that is coupled the second diode 145, which is in turn, connected to another terminal or a second conductive structure (e.g., the terminal 165).

During operation of the semiconductor device 200 (e.g., during ESD or surge events), the second diode 145 of the semiconductor device 200 may be forward biased, and when the Z1 diode of the first diode 225 undergoes the avalanche breakdown, current 270 flows between the terminal 160 and the terminal 165 to protect the DUP coupled to the semiconductor device 200. As with the operation of the semiconductor device 100, the portions of the second pn junction located proximate to the isolation structure (e.g., the portion of the second pn junction within the circle T) may experience the avalanche breakdown ahead of the other portions of the second pn junction. The multiple n-type regions 235, however, are expected to facilitate the other portions of the second pn junction participating (e.g., turning on via avalanche breakdown) in dissipating the current 270 throughout the first diode area 126 – namely, spreading the current 270 across the first diode area 126. The spreading of the current 270 (e.g., when compared to the current 170) may be attributable to the multiple n-type regions 235 that tend to force the current 270 to flow through discrete parts of the second diode 225, which correspond to the multiple n-type regions 235 as schematically indicated by the branches in the current 270.

Accordingly, the first diode 225 (the multi-fingered open-base npn bipolar transistor) may be considered to have a relatively uniform current gain (also known as h_fe or amplification factor) throughout the first diode area 126. The first diode 225 is also expected to have a relatively greater collector area (e.g., greater area of the n-type semiconductor layer 110 and/or the n-type semiconductor substrate 105) for the current conduction when compared to the semiconductor device 100 – e.g., as a result of the current 270 spread in a wider region of the first diode area 126 when compared to the semiconductor device 100. Thus, the semiconductor device 200 is expected to safely dissipate a greater amount of avalanche current when compared to the semiconductor device 100. For example, the semiconductor device 200 has shown about 15% greater current handling capability than the semiconductor device 100, which resulted in about 25% greater ESD ratings. Moreover, the first diode 225 is expected to have a less capacitance than the first diode 125 in view of the reduced area occupied by the multiple n-type semiconductor regions 235 when the first diode area 126 remains the same between the semiconductor device 100 and the semiconductor device 200.

The foregoing example embodiments described with reference to FIGS. 1A through 2C illustrate overall features and the principles of the present disclosure, and it should be understood the present disclosure is not limited thereto. For example, although the semiconductor device 200 is illustrated with the first diode area 126 and the second diode area 146, each of which is separately surrounded by the isolation areas 140a and 140b, respectively, in some embodiments, the isolation areas 140a and 140b may be merged together – e.g., the isolation structures 141a and 141b of FIG. 2C merged together.

In some embodiments, the p-type buried region 130 of the first diode 225 may directly contact the substrate 105. In other words, the p-type buried region 130 may extend from the p-type semiconductor layer 115 all the way to the substrate 105 such that the p-type semiconductor layer 115 can be in direct contact with the substrate 105. In such embodiments, the isolation structures 141 may extend past an interface between the p-type buried region 130 and the substrate 105. In some embodiments, the first diode 225 (without the second diode 145) may be used as a protection device against ESD (or surge) events.

FIG. 3 illustrates a schematic diagram of a semiconductor device 301 in accordance with embodiments of the present disclosure, which may be regarded as a composite layout of the semiconductor device 301. The semiconductor device 301 is generally similar to the semiconductor device 200 described with reference to FIGS. 2A through 2C, and therefore like reference numbers refer to like components of FIGS. 2A through 2C. Also illustrated in FIG. 3 is an equivalent circuit diagram 302 of the semiconductor device 301. The semiconductor device 301 includes three channels 310 (also identified individually as channels 310a through 310c), which may also be referred to as unit cells of the semiconductor device 301. The semiconductor device 301 includes a termination isolation area (e.g., the terminal isolation area 190) that surrounds the channels 310.

Each of the channels 310 includes the first diode 225 (also identified individually as first diodes 225a through 225c) and the second diode 145 (also identified individually as second diodes 145a through 145c). Moreover, the multiple n-type semiconductor regions 235 of the first diode 225 and the p-type region 150 of the second diode 145 are coupled to each other – namely, the terminal 160 of the first diode 225 and the terminal 165 of the second diode 145 are connected to each other, thereby forming a terminal for the channel 310 – e.g., the terminal 360, 365, or 370 described below. In this manner, individual channels (or unit cells) 310 may be regarded as having two terminals, namely a first terminal connected to both the terminal 160 and the terminal 165 and a second terminal corresponding to the n-type substrate 105 that is common to both the first diode 225 and the second diode 145. As such, individual channels 310 may be regarded as bidirectional diodes that each includes the first diode 225 and the second diode 145 connected in parallel as shown in the circuit diagram 302. In some embodiments, the first diode 225 may be referred to as a LC diode, and the second diode 145 may be referred to as a parallel diode. Similarly, the first diode area 226 may be referred to as an LC diode area, and the second diode area 146 may be referred to as a parallel diode area.

For example, the channel 310a includes the first diode 225a (i.e., D1a-Z1a diode) and the second diode 145a (i.e., D2a diode) connected in parallel. In this regard, the multi-fingered n-type regions 235 of the first diode 225a and the p-type region 150 of the second diode 145a are connected to the terminal 360 (denoted as HIGH terminal). Moreover, the n-type semiconductor layer 110 (i.e., cathode of the Z1a diode and cathode of the D2a diode) is connected to the n-type substrate 105. Similarly, the channel 310b includes the first diode 225b (i.e., D1b-Z1b diode) and the second diode 145b (i.e., D2b diode) connected in parallel, and the channel 310c includes the first diode 225c (i.e., D1c-Z1c diode) and the second diode 145c (i.e., D2c diode) connected in parallel. The channel 310b is connected to the terminal 365 (denoted as GROUND terminal) and the channel 310c is connected to the terminal 370 (denoted as LOW terminal). Each of the terminals 360, 365, and 370 may be a conductive structure (e.g., a metallic pad) disposed over the first diode 225 and the second diode 145, which is connected to the terminal 160 and the terminal 165 of the respective channels 310. As shown in the circuit diagram 302, the n-type substrate 105 provides a shared terminal for the three channels 310a, 310b, and 310c.

The current conduction scheme described with reference to FIG. 2C applies between the unit cells of the semiconductor device 301. In other words, during operation of the semiconductor device 301, the second diode 145 of a channel “supplies (drives)” the current to the first diode 225 of another channel. By way of example, during a first ESD event with a first polarity between the HIGH and GROUND terminals (e.g., forward biasing the second diode 145a), the avalanche current flows between the second diode 145a (connected to the HIGH terminal) and the first diode 225b (connected to the GROUND terminal). The avalanche current is indicated with an arrow originating from the second diode 145a (with a circled end) and terminating at the first diode 225b (with a pointed end). In this regard, the second pn junction (i.e., Z1b diode) of the first diode 225b breaks down to flow (dissipate, shunt) the current to the GROUND terminal.

Similarly, during a second ESD event with a second polarity between the HIGH and GROUND terminals, which is opposite to the first polarity (e.g., forward biasing the second diode 145b), the avalanche current flows between the second diode 145b (connected to the GROUND terminal) and the first diode 225a (connected to the HIGH terminal). The second pn junction (i.e., Z1a diode) of the first diode 225a breaks down to flow the current to the HIGH terminal. The avalanche current is indicated with an arrow originating from the second diode 145b (with a circled end) and terminating at the first diode 225a (with a pointed end). Different ESD events (and corresponding conduction of avalanche current) between the GROUND and LOW terminals, as well as the HIGH and LOW terminals are indicated by additional arrows in FIG. 3.

As used herein, the arrows indicate representative current flow between components (e.g., first diodes 225, second diodes 145) of the channels (e.g., channels 310 of the semiconductor device 301). Moreover, different lengths of the arrows may generally correspond to different lateral distances that the avalanche current travels – e.g., in the n-type substrate 105 provided that the vertical distances that the avalanche current travels are approximately the same among different ESD events. In some embodiments, the lateral distance that the avalanche current travels may be related to (e.g., proportional to) various electrical characteristics of the semiconductor device 301 during its operation – e.g., dynamic resistance (Ron), amount of current that can be safely dissipated (It2). For example, in some embodiments, the longer the distance for the avalanche current to travel may result in the greater amount of current that can be safely dissipated (e.g., greater It2) at least partially due to spreading of the avalanche current throughout a wider area of the n-type substrate 105.

FIGS. 4A and 4B illustrate schematic diagrams of semiconductor devices 401 through 404 in accordance with embodiments of the present disclosure, which may be regarded as composite layouts of the semiconductor devices. The semiconductor devices 401 through 404 are generally similar to the semiconductor device 301 described with reference to FIG. 3, and therefore like reference numbers refer to like components of FIG. 3.

Each of the semiconductor devices 401 through 404 includes three channels 410 (also identified individually as channels 410a through 410c depicted in FIG. 4A). As with the channels 310 of the semiconductor device 301, the channels 410 includes a first diode 425 and a second diode 445 connected in parallel. Each of the first diodes 425 and the second diodes 445 are surrounded by respective isolation areas, and a termination isolation area surrounds the three channels 410. Also, the first diodes 425 include the multi-fingered n-type regions 235. The schematic diagrams of semiconductor devices 402 through 404 illustrated in FIG. 4B omit certain features when compared to the semiconductor device 401 illustrated in FIG. 4A. For example, the isolation areas and the multi-fingered n-type regions are omitted in FIG. 4B to clearly describe overall features and the principles of the present disclosure.

The equivalent circuit diagram 302 described with reference to FIG. 3 applies to the semiconductor devices 401 through 404, respectively. For example, each channel 410 includes a first diode 425 and a second diode 445 connected in parallel. As with the semiconductor device 301, the three channels 410a through 410c are connected to terminals 360, 365, and 370 (i.e., HIGH, GROUND, and LOW terminals), respectively. The substrate 105 provides a common or shared node for the three channels 410a through 410c. As such, the current conduction schemes described with reference to FIG. 3 apply to the semiconductor devices 401 through 404.

For example, during a first ESD event with a first polarity between the HIGH and GROUND terminals (e.g., forward biasing the second diode 445a), the avalanche current flows between the second diode 445a (connected to the HIGH terminal) and the first diode 425b (connected to the GROUND terminal). The avalanche current is indicated with an arrow originating from the second diode 445a (with a circled end) and terminating at the first diode 425b (with a pointed end). In this regard, the second pn junction (i.e., Z1b diode) of the first diode 425b breaks down to flow (dissipate, shunt) the current to the GROUND terminal.

Similarly, during a second ESD event with a second polarity between the HIGH and GROUND terminals, which is opposite to the first polarity (e.g., forward biasing the second diode 445b), the avalanche current flows between the second diode 445b (connected to the GROUND terminal) and the first diode 425a (connected to the HIGH terminal). The second pn junction (i.e., Z1a diode) of the first diode 425a breaks down to flow the current to the HIGH terminal. The avalanche current is indicated with an arrow originating from the second diode 445b (with a circled end) and terminating at the first diode 425a (with a pointed end). Different ESD events (and corresponding conduction of avalanche current) between the GROUND and LOW terminals, as well as the HIGH and LOW terminals are indicated by additional arrows in FIG. 4A.

The first diodes 425 may be regarded generally the same as the first diodes 225 except that the first diode areas 426 corresponding to the first diodes 425 do not include any re-entrant corners. In other words, all the interior angles of the first diode areas 426 are less than 180 degrees. Moreover, the first diodes 425 include the multi-fingered n-type regions 235 distributed throughout the first diode area 426 – e.g., the multi-fingered n-type regions 235 across a length (denoted as L1 in FIG. 4A) of the first diode area 426 facing the second diode area 446. The length may be approximately same as the corresponding length of the first diode area 426 except the spacing between the isolation area and the n-type regions 235 located immediately next to the isolation area along the length.

The second diodes 445 may be regarded generally the same as the second diodes 145 except that the second diode areas 446 corresponding to the second diodes 445 have a length (denoted as L2 in FIG. 4A) at a side facing the first diode area 426, which is approximately the same as the length L1 of the first diode area 426. The lengths L1 and L2 may be generally perpendicular to the lateral direction of the avalanche current flowing between the first diode 425 and the second diode 445. In this manner, during operation of the semiconductor device 401, the avalanche current conduction between the second diode 445 of one channel (e.g., channel 410a) and the first diodes 425 of another channel (e.g., channel 410b) can be configured to flow in generally one direction without having to spread out in different directions. In other words, the avalanche current paths are parallel to each other across approximately the entire length (L1 or L2) of the first diode 425 and the second diode 445. The parallel current paths may facilitate reducing the localized current crowding phenomena.

Although the first diodes 225 of the semiconductor device 301 includes the multi-fingered n-type regions 235 that are expected to mitigate the risk of avalanche current crowding to a certain degree, the first diodes 225 (i.e., the first diode areas 226) include re-entrant corners (e.g., the re-entrant corner R described with reference to FIG. 1A) that may render the semiconductor device 301 somewhat vulnerable to the risk of avalanche current crowing. Contrary to the first diodes 225, the first diodes 425 (i.e., the first diode areas 426) do not include any re-entrance corners to avoid electric field concentrating at the re-entrant corners. Moreover, the width (W denoted in FIG. 4A) of the first diodes 425 can be determined to avoid a “cold” region in the first diode area 426 – e.g., the cold regions C of the n-type regions 135 as described with reference to FIG. 1A. Thus, the semiconductor device 401 is expected to safely dissipate a greater amount of avalanche current when compared to the semiconductor device 301. For example, the semiconductor device 401 has shown about 20% greater current handling capability (e.g., It2) than the semiconductor device 301.

The semiconductor device 402 depicted in FIG. 4B may be regarded as a variation of the semiconductor device 401 described herein. For example, the channel 410b connected to the GROUND terminal 365 is modified to include two second diodes 445b1 and 445b2, each of which are located next to the channel 410a connected to the HIGH terminal 360 and the channel 410c connected to the LOW terminal 370, respectively. In this manner, the second diodes 445b1 and 445b2 may facilitate the avalanche current to travel to the first diode 425a (e.g., during the ESD events between the HIGH terminal 360 and the GROUND terminal 365) and to the first diode 425c (e.g., during the ESD events between the LOW terminal 370 and the GROUND terminal 365) in an approximately equal lateral distance. As such, the semiconductor device 402 may be expected to have more symmetrical electrical characteristics (e.g., Ron, It2) when compared to the semiconductor device 401. For example, the semiconductor device 402 is expected to have the avalanche current handling capability symmetrical to both polarities of the ESD events (e.g., between HIGH and GROUND terminals, between LOW and GROUND terminals, between HIGH and LOW terminals). Various conduction paths of avalanche current associated with ESD events among the HIGH, GROUND, and LOW terminals are indicated as arrows in the semiconductor device 402 diagram.

The semiconductor device 403 depicted in FIG. 4B may be regarded as a variation of the semiconductor device 401 (or the semiconductor device 402) described herein. The semiconductor device 403 has the area between the first diodes 425a and 425b (and between the first diodes 425b and 425c) divided into two halves such that second diodes 445b1 and 445a (and the second diodes 445b2 and 445c) can be located in the area. In other words, two second diodes (e.g., second diodes 445a and 445b1, second diodes 445b2 and 445c) can be reduced in size (e.g., having a shorter length than the first diodes 425) such that two second diodes can be stacked along the length direction in the area between the first diodes to reduce the total area of the semiconductor device 402 – e.g., when compared to the semiconductor device 402 (or the semiconductor device 401).

The semiconductor device 403 includes the channel 410a connected to the HIGH terminal 360, which has the first diode 425a and the second diode 445a. The channel 410b of the semiconductor device 403 is connected to the GROUND terminal 365, and includes the first diode 425b and the second diodes 445b1 and 445b2 positioned at each side of the first diode 425b facing the first diode 425a and the first diode 425c, respectively. The channel 410c of the semiconductor device 403 is connected to the LOW terminal 370, and includes the first diode 425c and the second diode 445c. Various conduction paths of avalanche current associated with ESD events among the HIGH, GROUND, and LOW terminals are indicated as arrows in the semiconductor device 403 diagram.

The semiconductor device 404 depicted in FIG. 4B may be regarded as another variation of the semiconductor device 401 (or the semiconductor devices 402) described herein. The semiconductor device 404 illustrates that the second diodes 445 can be further segmented. Namely, the semiconductor device 404 has the area between the first diodes 425a and 425b (and between the first diodes 425b and 425c) divided into three regions such that second diodes 445a1, 445a2, and 445b1 (and the second diodes 445c1, 445c2, and 445b2) can be located in the area.

The semiconductor device 404 includes the channel 410a connected to the HIGH terminal 360, which includes the first diode 425a and the second diodes 445a1 and 445a2. The channel 410b of the semiconductor device 404 is connected to the GROUND terminal 365, and includes the first diode 425b and the second diodes 445b1 and 445b2 positioned at each side of the first diode 425b facing the first diode 425a and the first diode 425c, respectively. The channel 410c of the semiconductor device 404 is connected to the LOW terminal 370, and includes the first diode 425c and the second diodes 445c1 and 445c2. Various conduction paths of avalanche current associated with ESD events among the HIGH, GROUND, and LOWterminals are indicated as arrows in the semiconductor device 404 diagram.

FIGS. 5A and 5B illustrate schematic diagrams of semiconductor devices 501, 503, and 504 and an equivalent circuit diagram 502 of the semiconductor devices 501, 503, and 504 in accordance with embodiments of the present disclosure. The schematic diagrams of semiconductor devices 501, 503, and 504 may be regarded as composite layouts of the semiconductor devices. The semiconductor devices 501, 503, and 504 are generally similar to the semiconductor device 301 and the semiconductor device 401 described with reference to FIGS. 3 and 4A, and therefore like reference numbers refer to like components of FIGS. 3 and 4A.

The semiconductor device 501 depicted in FIG. 5A may be regarded as a variation of the semiconductor device 301 described with reference to FIG. 3. The semiconductor device 501 has two channels 310a and 310b. The channel 310a is connected to the terminal 360 (denoted as HIGH terminal) and the channel 310b is connected to a terminal 565 (denoted as LOW/GND terminal). As such, the semiconductor device 501 may be regarded as an ESD (or surge) protection device configured to couple with two terminals of a DUP while the semiconductor devices 301 and 401 are configured to couple with three terminals of a DUP. FIG. 5A also illustrates the equivalent circuit diagram 502 including two channels 310a and 310b, each of which is connected to the terminal 360 and the terminal 565, respectively. As with the equivalent circuit diagram 302, the substrate 105 provides a common node for the channels 310a and 310b.

Conduction paths of avalanche current associated with ESD events between the HIGH and LOW/GND terminals are indicated as arrows in the semiconductor device 501 diagram. One or both of the channels 310a and 310b may be rotated to increase the distance (e.g., lateral distance) that the avalanche current travels during the ESD events – e.g., rotating clockwise by 90-degrees. The first diodes 225 of the semiconductor device 501 includes the multi-fingered n-type regions 235 that are expected to mitigate the risk of avalanche current crowding to a certain degree. The first diodes 225 (i.e., the first diode areas 226), however include re-entrant corners (e.g., the re-entrant corner R described with reference to FIG. 1A) that may render the semiconductor device 501 somewhat vulnerable to the risk of avalanche current crowing.

The semiconductor device 503 and the semiconductor device 504 depicted in FIG. 5B may be regarded as variations of the semiconductor device 401 described with reference to FIG. 4A. For example, the first diodes 425a/b includes the multi-fingered n-type regions 235. The semiconductor devices 503 and 504 have two channels 410a and 410b. The channel 410a is connected to the terminal 360 (denoted as HIGH terminal) and the channel 410b is connected to a terminal 565 (denoted as LOW/GND terminal). Conduction paths of avalanche current associated with ESD events between the HIGH and LOW/GND terminals are indicated as arrows in the diagrams of the semiconductor devices 503 and 504. The semiconductor devices 503 and 504 are expected to have greater avalanche current handling capability (e.g., It2) when compared to the semiconductor device 501 at least partially due to absence of the re-entrant corners. The semiconductor device 504 may have relatively greater avalanche current handling capability (e.g., It2) than the semiconductor device 503 in view of the relatively longer conduction paths (which may facilitate spreading of the avalanche current), in some embodiments.

While various embodiments of the present disclosure have been described above, it is to be understood that they have been presented by way of example and not limitation. Numerous changes to the disclosed embodiments can be made in accordance with the disclosure herein without departing from the spirit or scope of the present disclosure. In addition, while in the illustrated embodiments various features or components have been shown as having particular arrangements or configurations, other arrangements and configurations are possible. Moreover, aspects of the present technology described in the context of example embodiments may be combined or eliminated in other embodiments. Thus, the breadth and scope of the present disclosure is not limited by any of the above described embodiments.

Claims

1. A semiconductor device, comprising: a p-type semiconductor layer including a plurality of n-type semiconductor regions, wherein each of the n-type semiconductor regions has: a footprint with a circular, oval, or obround shape;a boundary of the footprint spaced apart from an isolation structure that surrounds the p-type semiconductor layer; anda group of contacts connected to the n-type semiconductor region, wherein individual groups of contacts of the n-type semiconductor regions are coupled to a terminal.

2. The semiconductor device of claim 1, wherein the isolation structure includes a trench isoloation structure having a dielectic liner and a conductive material formed thereon.

3. The semiconductor device of claim 1, wherein the p-type semiconductor layer occupies an area exclusive of a re-entrant corner.

4. The semiconductor device of claim 1, wherein the p-type semiconductor layer corresponds to a first p-type semiconductor layer, the semiconductor device further comprising: a second p-type semiconductor layer including a greater p-type dopant concentration than the first p-type semiconductor layer, on which the first p-type semiconductor layer is located;a first n-type semiconductor layer, on which the second p-type semiconductor layer is located; anda second n-type semiconductor layer including a greater n-type dopant concentration than the first n-type semiconductor layer, on which the first n-type semiconductor layer is located.

5. The semiconductor device of claim 4, wherein: a plurality of first pn junctions is formed at a first depth from a surface of the first p-type semiconductor layer, the plurality of first pn junctions being across the n-type semiconductor regions of the plurality and the first p-type semiconductor layer; anda second pn junction is formed at a second depth from the surface greater than the first depth, the second pn junction being across the second p-type semiconductor layer and the first n-type semiconductor layer.

6. The semiconductor device of claim 4, wherein the plurality of n-type semiconductor regions, the first and second p-type semiconductor layers, and the first n-type semiconductor layer form an open-base npn bipolar transistor.

7. The semiconductor device of claim 6, wherein: the terminal corresponds to a first terminal of the npn bipolar transistor; andthe second n-type semiconductor layer corresponds to a second terminal of the npn bipolar transistor.

8. The semiconductor device of claim 4, wherein the isolation structure extends from a surface of the first p-type semiconductor layer past an interface between the first and the second n-type semiconductor layers.

9. The semiconductor device of claim 1, wherein each of the n-type semiconductor regions of the plurality comprises an inner portion and an outer portion with a less n-type dopant concentration than the inner portion.

10. A semiconductor device, comprising: an n-type substrate;an n-type layer on the substrate;a p-type layer over the n-type layer; anda first area including a plurality of n-type regions in the p-type layer, wherein each of the n-type regions has: a footprint with a circular, oval, or obround shape;a boundary of the footprint spaced apart from a first isolation structure that surrounds the first area; anda first group of contacts connected to the n-type region, wherein individual first groups of contacts of the n-type regions are coupled to a terminal.

11. The semiconductor device of claim 10, wherein the first area is exclusive of an interior angle greater than 180 degrees.

12. The semiconductor device of claim 10, wherein the p-type layer and the plurality of n-type regions forms a plurality of first pn junctions at a first depth from a surface of the p-type layer that faces away from the substrate.

13. The semiconductor device of claim 12, wherein the first area further includes a second pn junction at a second depth from the surface greater than the first depth, the second pn junction formed across the n-type layer and a p-type buried region extended from the p-type layer toward the substrate.

14. The semiconductor device of claim 13, wherein the plurality of n-type regions, the p-type layer, the p-type buried region, and the n-type layer form an open-base npn bipolar transistor.

15. The semiconductor device of claim 13, further comprising: a second area located next to the first area, the second area including: a p-type region in the p-type layer; anda second group of contacts connected to the p-type region; anda second isolation structure surrounding the second area.

16. The semiconductor device of claim 15, wherein the second area includes a third pn junction at a third depth from the surface greater than the first depth and less than the second depth, the third pn junction formed across the p-type layer and the n-type layer.

17. The semiconductor device of claim 15, wherein the first and second isolation structures extend from the surface past an interface between the n-type layer and the n-type substrate.

18. The semiconductor device of claim 15, wherein the first and second isolation structures include a trench isoloation structure having a dielectic liner and a conductive material formed thereon.

19. The semiconductor device of claim 15, wherein the second group of contacts of the second area is connected to the terminal.

20. The semiconductor device of claim 15, wherein the second group of contacts of the second area is connected to another terminal.

21. The semiconductor device of claim 15, wherein: the first area has a first length; andthe second area has a second length that is approximately same as the first length.

22. The semiconductor device of claim 15, wherein: the first area has a first length; andthe second area has a second length that is less than the first length.

23. A semiconductor device, comprising: an n-type substrate;an n-type layer on the substrate;a p-type layer over the n-type layer;a first low capacitance (LC) diode area;a second LC diode area located at a first side of the first LC diode area; anda third LC diode area located at a second side of the first LC diode area opposite to the first side, wherein: each of the first, second, and third LC diode areas includes a plurality of n-type regions in the p-type layer, each of the n-type regions having: a footprint with a circular, oval, or obround shape;a boundary of the footprint spaced apart from an isolation structure that surrounds the LC diode area; anda first group of contacts connected to the n-type region, wherein individual first groups of contacts of the n-type regions are coupled to each other.

24. The semiconductor device of claim 23, wherein each of the first, second, and third LC diode areas is exclusive of an interior angle greater than 180 degrees.

25. The semiconductor device of claim 23, wherein each of the first, second, and third LC diode areas further includes a p-type buried region extended from the p-type layer toward the substrate.

26. The semiconductor device of claim 25, wherein the p-type buried region terminates within the n-type layer.

27. The semiconductor device of claim 25, wherein each of the first, second, and third LC diode areas includes an open-base npn bipolar transistor formed by the plurality of n-type regions, the p-type layer, the p-type buried region, and the n-type layer.

28. The semiconductor device of claim 23, further comprising: a first parallel diode area located between the first and second LC diode areas; andsecond and third parallel diode areas located between the first and third LC diode areas, wherein each of the first, second, and third parallel diode areas includes: a p-type region in the p-type layer; anda second group of contacts connected to the p-type region.

29. The semiconductor device of claim 28, wherein each of the first, second, and third parallel diode areas includes a pn junction formed across the p-type layer and the n-type layer.

30. The semiconductor device of claim 28, wherein the second parallel diode area is located between the first LC diode area and the third parallel diode area.

31. The semiconductor device of claim 28, wherein: the individual first groups of contacts of the second LC diode area are coupled to the second group of contacts of the first parallel diode area;the individual first groups of contacts of the first LC diode area are coupled to the second group of contacts of the second parallel diode area; andthe individual first groups of contacts of the third LC diode area are coupled to the second group of contacts of the third parallel diode area.

32. The semiconductor device of claim 28, wherein: the first LC diode area has a first length at the first and second sides, wherein the first and second sides are opposite to each other;the second and third LC diode areas have the first length at a side facing the first LC diode; andeach of the first, second, and third parallel diode areas has a second length at a side facing the first, second, or third LC diode area, respectively, wherein the second length is approximately same as the first length.