Semiconductor integrated circuit chip with a nano-structure-surface passivation film and method of fabricating the same

Abstract

A semiconductor integrated circuit (IC) chip includes an IC chip body and a nano-structure-surface passivation film. The IC chip body has at least one surface. The nano-structure-surface passivation film is formed on the at least one surface. The nano-structure-surface passivation film including nano-particles and a carrier resin protects the IC chip body from encountering any external interference.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present invention, and wherein:

FIG. 1 is a schematic illustration showing a method of processing a surface of a semiconductor integrated circuit chip according to a preferred embodiment of the invention;

FIG. 2 shows an example of an application of the semiconductor IC chip of FIG. 1;

FIG. 3 is a schematic illustration showing a fingerprint image obtained using the semiconductor IC chip of FIG. 2;

FIG. 4 shows another example of an application of the semiconductor IC chip of FIG. 1; and

FIG. 5 is a schematic illustration showing a plurality of fragment fingerprint images, which is obtained by the semiconductor IC chip of FIG. 4 and is combined into a fingerprint image.

Claims

1. A semiconductor integrated circuit chip, comprising: an integrated circuit (IC) chip body having at least one surface; anda nano-structure-surface passivation film, which has a lotus effect and is formed on the at least one surface, for protecting the IC chip body from encountering any external interference.

2. The chip according to claim 1, wherein the nano-structure-surface passivation film has a thickness ranging from 0.3 to 10 microns.

3. The chip according to claim 1, wherein the IC chip body further has a plurality of fingerprint sensing members for sensing a whole fingerprint or a partial fingerprint.

4. The chip according to claim 1, wherein the IC chip body senses a plurality of fragment fingerprint images of a finger when the finger sweeps across the IC chip body.

5. The chip according to claim 1, wherein the IC chip body senses a fingerprint image of a finger when the finger is placed on the IC chip body stationarily.

6. The chip according to claim 1, wherein the at least one surface is made of silicon dioxide or silicon nitride.

7. The chip according to claim 1, wherein the IC chip body further has an electrostatic discharge metal net structure for discharging electrostatic charges.

8. The chip according to claim 7, wherein the electrostatic discharge metal net structure is exposed from the nano-structure-surface passivation film.

9. The chip according to claim 1, wherein the nano-structure-surface passivation film contains nano-particles and a carrier resin.

11. The chip according to claim 1, wherein the nano-structure-surface passivation film is made of a dielectric material or an insulation material.