Claims
- 1. A transmission line tap for a field emission displays the line tap coupled to a transmission line for tapping a portion of an input signal exceeding a threshold voltage and blocking a portion of the input signal less than the threshold voltage, comprising:
- first and second opposed semiconductor junctions coupled between a transmission line and an output terminal, wherein the first junction is coupled to block current from flowing in a first direction and the second junction is coupled to block current from flowing in a second direction opposite the first direction, the second junction having a forward bias voltage, the first junction having a breakdown voltage substantially equal to the threshold voltage less the forward bias voltage of the second junction, the second junction having a breakdown voltage selected to correspond to a magnitude of a clearing pulse carried on a transmission line.
- 2. The tap of claim 1 wherein the first and second junctions are integrated into a common substrate.
- 3. The tap of claim 1, further comprising a storage capacitor coupled between the output terminal and a reference potential.
- 4. The tap of claim 1 wherein the first and second junctions form zener diodes.
- 5. A transmission line tap for driving a signal line in a field emission display, the signal line having a line capacitance, the tap providing an output signal in response to pulses having voltages greater than a threshold voltage, wherein the pulses have a pulse duration, the tap comprising:
- first and second opposed p-n junctions coupled between the transmission line and the line capacitance wherein the first p-n junction has a breakdown voltage selected to correspond to the threshold voltage and the second p-n junction has a breakdown voltage selected to correspond to a voltage of a clearing pulse, the first p-n junction having a response time sufficiently short to charge the line capacitance during the pulse duration.
- 6. The tap of claim 5, further comprising a supplemental capacitance coupled between the signal line and a reference potential, wherein the response time of the first p-n junction is sufficiently short to substantially charge the line capacitance and the supplemental capacitance within the pulse duration.
- 7. The tap of claim 5 wherein the first p-n junction comprises a doping profile selected such that the first p-n junction is a zener junction.
- 8. The tap of claim 5 wherein the first and second p-n junctions are integrated into a common substrate.
- 9. The tap of claim 8 wherein the first and second p-n junctions comprise a common n-region.
- 10. The tap of claim 8 wherein the first and second p-n junctions comprise a common p-region.
- 11. A field emission display for displaying an image in response to an input signal, from a signal source wherein the input signal includes a portion exceeding a threshold voltage, comprising:
- a transmission line coupled to the signal source and carrying a clearing pulse having a magnitude;
- a transmission line tap having an input coupled to the transmission line and an output, the tap further including first and second opposed semiconductor junctions coupled between a transmission line and an output terminal, wherein the first junction is coupled to block current from flowing in a first direction and the second junction is coupled to block current from flowing in a second direction opposite the first direction, the second junction having a forward bias voltage, the first junction having a breakdown voltage substantially equal to the threshold voltage less the forward bias voltage of the second junction, the second junction having a breakdown voltage selected to correspond to the magnitude of the clearing pulse; and
- a field emission display assembly coupled to the output terminal.
- 12. The display of claim 11, further comprising a storage capacitor coupled between the output terminal and a reference potential.
- 13. The display of claim 11 wherein the first and second junctions form zener diodes.
- 14. The display of claim 11 wherein the first and second junctions are integrated into a common substrate.
- 15. A field emission display apparatus for producing an image, comprising:
- a signal source producing a series of pulses, wherein selected pulses include a portion exceeding a threshold voltage, each pulse having a pulse duration;
- a transmission line coupled to the signal source, the transmission line carrying a clearing pulse having a magnitude;
- a plurality of transmission line taps spaced along the transmission line, each tap including first and second opposed p-n junctions coupled between the transmission line wherein the first p-n junction has a breakdown voltage selected to correspond to the threshold voltage and the second p-n junction has a breakdown voltage selected to correspond to the magnitude of the clearing pulse; and
- a signal line coupled to one of the taps, the signal line having a line capacitance;
- wherein the first p-n junction has a response time sufficiently short to charge the line capacitance during the pulse duration.
- 16. The apparatus of claim 15 wherein the tap further includes a supplemental capacitance coupled between the signal line and a reference potential and wherein the response time of the first p-n junction is sufficiently short to substantially charge the line capacitance and the supplemental capacitance within the pulse duration.
- 17. The tap of claim 15 wherein the first p-n junction comprises a doping profile selected such that the first p-n junction is a zener junction.
- 18. The tap of claim 15 wherein the first and second p-n junctions are integrated into a common substrate.
- 19. The tap of claim 18 wherein the first and second p-n junctions comprise a common n-region.
- 20. A method of driving a signal line in a field emission display in response to an image signal, comprising the steps of:
- producing a transmission line pulse in response to the image signal;
- breaking down a reverse biased diode with the transmission line pulse to produce an output signal;
- storing charge in response to the output signal;
- discharging the stored charge into the signal line, and
- blocking discharge of the stored charge into the transmission line with a second diode.
- 21. The method of claims 20, further comprising the step of clearing the stored charge with a clearing pulse.
- 22. The method of claim 21 wherein the step of clearing the stored charge with a clearing pulse comprises the step of breaking down the second diode.
- 23. The method of claim 20 wherein the step of producing a transmission line pulse comprises the step of constructively interfering first and second signals on a transmission line.
STATEMENT AS TO GOVERNMENT RIGHTS
This invention was made with government support under Contract No. DABT 63-93-C-0025 awarded by Advanced Research Projects Agency ("ARPA"). The government has certain rights in this invention.
US Referenced Citations (5)