Claims
- 1. A method for fabricating a semiconductor laser, comprising the steps of:
- forming at least one stripe groove on an upper face of a (100) GaAs substrate; and
- forming a semiconductor multilayer structure on the substrate,
- wherein the step of forming the stripe groove includes a step of etching a region of the substrate extending along a <1-10> direction, and
- the step of forming the semiconductor multilayer structure includes the steps of:
- performing vapor phase epitaxy at temperatures in the range of 400.degree. C. to 700.degree. C., so as to deposit, on the substrate, an Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) including a portion having a surface of an (all) crystal plane (a>1), the portion being positioned on the stripe groove; and
- growing a first AlGaInP cladding layer of a first conductivity type, an active layer, and a second AlGaInP cladding layer of a second conductivity type at temperatures of 600.degree. C. or more.
- 2. A fabrication method according to claim 1, wherein, when the first AlGaInP cladding layer is to be formed, the AlGaInP cladding layer is doped with a first-type conductivity dopant and a second-type conductivity dopant simultaneously, whereby a portion of the AlGaInP cladding layer positioned above the stripe groove is formed so as to be a portion of the first conductivity.
- 3. A method for fabricating a semiconductor laser comprising the steps of:
- forming at least one stripe groove on an upper face of a (100) GaAs substrate; and
- forming a semiconductor multilayer structure on the substrate,
- wherein the step of forming the stripe groove includes a step of etching a region of the substrate extending along a <1-10> direction, and
- the step of forming the semiconductor multilayer structure includes the steps of:
- performing vapor phase epitaxy at temperatures in the range of 400.degree. C. to 700.degree. C., so as to deposit on the substrate, an Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) including a portion having a surface of an (all) crystal plane (a>1), the portion being positioned on the stripe groove;
- growing an AlGaInP layer on the Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) at temperatures of 600.degree. C. or more; and
- successively depositing a first cladding layer, an active layer, and a second cladding layer, the first and second cladding layers being formed of II-VI group semiconductors.
- 4. A fabrication method according to claim 3, wherein when the AlGaInP layer is to be formed, the AlGaInP layer is doped with a first-type conductivity dopant and a second-type conductivity dopant simultaneously, whereby a portion of the AlGaInP layer positioned above the stripe groove is formed so as to be a portion of the first conductivity.
- 5. A method for fabricating a semiconductor laser comprising the steps of:
- forming a semiconductor multilayer structure on a semiconductor substrate, the semiconductor multilayer structure including a semiconductor layer doped with impurities and an active layer with a natural superlattice;
- forming a mask layer against hydrogen atoms on a predetermined region of an upper face of the semiconductor multilayer structure; and
- annealing the semiconductor multilayer structure in a gas containing hydrogen atoms, and selectively diffusing the impurities from the impurity doped semiconductor layer to the predetermined region, whereby a bandgap of the predetermined region of the active layer is made larger than that of a region other than the predetermined region of the active layer.
- 6. A fabrication method according to claim 5, wherein the mask layer is disposed above a portion of the semiconductor multilayer structure so as to be a cavity edge.
- 7. A fabrication method according to claim 5, wherein the step of forming the semiconductor multilayer structure includes a step of forming a Ga.sub.x In.sub.1-x P layer (0.ltoreq.x.ltoreq.1) or an Al.sub.y Ga.sub.1-y As layer (0.ltoreq.x.ltoreq.1) as the active layer.
- 8. A fabrication method according to claim 5, wherein a gas containing constituent atoms of an exposed semiconductor layer at the upper face of the semiconductor multilayer structure is used as the gas.
- 9. A fabrication method according to claim 8, wherein a gas selected from a group consisting of a mixed gas of AsH.sub.3 and H.sub.2, a hydrogen plasma, PH.sub.3, and H.sub.2 is used as the gas.
Priority Claims (2)
Number |
Date |
Country |
Kind |
5-186023 |
Jul 1993 |
JPX |
|
5-207689 |
Aug 1993 |
JPX |
|
Parent Case Info
This application is a division of application Ser. No. 08/280,936, filed Jul. 27, 1994, (status: pending).
US Referenced Citations (6)
Non-Patent Literature Citations (1)
Entry |
K. Itaya et al., "New Window-Structure In GaA1P Visible Light Laser Diodes by Self-Selective Zn Diffusion-Induced Disordering", IEEE Journal of Quantum Electronics, vol. 27, No. 6, pp. 1496-1500 (Jun.1991). |
Divisions (1)
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Number |
Date |
Country |
Parent |
280936 |
Jul 1994 |
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