Claims
- 1. A method of producing a semiconductor laser, comprising:a first growth step of sequentially growing, on a substrate, a first cladding layer, a first active layer for forming a gain region, and a second cladding layer, to form a stacked semiconductor layer; a first groove formation step of forming stripe-like first grooves in part of said stacked semiconductor layer with a specific gap kept between the grooves, to form a stripe-like ridge between the grooves and to expose the first cladding layer from the bottoms of the first grooves; a second growth step of growing a second active layer for forming a saturable absorption region on the first cladding layer exposed in the first grooves, the second active layer having a composition different from that of the first active layer, and growing a current constriction layer for forming a current constriction means; a second groove formation step of forming second grooves on both sides of the ridge with specific distances kept between the second grooves and the ridge, to expose the first cladding layer from the bottoms of the second grooves; and a third growth step of growing a third active layer for forming an outside region on the first cladding layer exposed in the second grooves, the third active layer having a composition different from those of the first and second active layers for forming the gain region and the saturable absorption region, and growing a current constriction layer for forming the current constriction means; wherein effective band gaps Eg1, Eg2 and Eg3 of the gain region, saturable absorption region and outside region, respectively, are selected to satisfy an inequality of Eg1≧Eg2>Eg3.
Priority Claims (1)
Number |
Date |
Country |
Kind |
P10-351623 |
Dec 1998 |
JP |
|
RELATED APPLICATION DATA
This application is a divisional of co-pending application Ser. No. 09/457,133, filed Dec. 9, 1999 U.S. Pat. No. 6,470,039. The present and foregoing applications claim priority to Japanese Application No. P10-351623, filed on Dec. 10, 1998. All of the foregoing applications are incorporated herein by reference to the extent permitted by law.
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