Matsumoto, N., et al., "Low threshold current, high quantum efficiency 1.5 .mu.m GalnAs-GalnAsP GRIN-SCH single quantum well laser diodes" IEEE Journal of Quantum Electronics 27(6):1790-1793, Jun. 1991. |
Tanbun-Ek, T., et al., "Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy" Applied Physics Letters 55(22):2283-2285, Nov. 1989. |
Ishiguro, H., et al., "InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition" Applied Physics Letters 52(25):2099-2101, Jun. 1988. |
Zhu, L. D., et al., "Optical gain in GaAs/GaAlAs graded-index separate-confinement single-quantum-well heterostructures" IEEE Journal of Quantum Electronics 25(6):1171-1178, Jun. 1989. |