Japanese Patent Publication 59-48976 (3/84), Furuse, "Semiconductor Laser". |
Japanese Patent Publication 61-207090 (9/86), Kondo, "Semiconductor Light Emitting Device". |
Smith, Jul./Aug. 1986, Xerox Disclosure Journal 11(4):151-152 "A Method For Fabricating An Index Guided Laser". |
Hayakawa et al. (1986) Applied Physics Letters 49(11);636-638 "Low Current Threshold AlGaAs Visible Laser Diode with an (AlGaAs).sub.m (GaAs).sub.n Superlattice Quantum Well". |
Patent Abstracts of Japan (Nov. 29, 1985) 9(302), E-362,2025 appl. No. 58-250138, "Buried Type Semiconductor Laser". |
Patent Abstracts of Japan (Jun. 28, 1984) 8(139), E-253, 1576, appl. No. 57-160054, "Semiconductor Laser". |
Patent Abstracts of Japan (Nov. 22, 1984) 8(256), E-280, 1693, appl. No. 59-127893, "Semiconductor Laser". |
Kurobe et al., (1986) Electronics Letters 22(21):1117-1118, "Submilliampere Lasing of Zn-Diffused Mesa Buried-Hetero Al.sub.x Ga.sub.1-x As/GaAs Multi-Quantum-Well Lasers at 77K". |
Patent Abstracts of Japan, vol. 5, No. 167 (E-79)[839], Oct. 24, 1981. |
Patent Abstracts of Japan, vol. 9, No. 189 (E-333)[1912], Aug. 6, 1985. |
Patent Abstracts of Japan, vol. 10, No. 244 (E-430)[2300], Aug. 22, 1986. |
Patent Abstracts of Japan, vol. 7, No. 148 (E-184) [1293], Jun. 29, 1983. |