Claims
- 1. A method for producing a semiconductor laser device, comprising the steps of: forming a ridge portion on a semiconductor substrate, the width of said ridge portion being smaller in the vicinity of the facets than in the inside of the device; forming at least three V-striped side grooves symmetrically on both sides of the center region of said ridge portion with the same width as that of the regions thereof near the facets, respectively; growing a current blocking layer on the entire surface of said substrate including the ridge portion; forming at least one striped groove for an optical waveguide on the center of said ridge portion through the current blocking layer; and forming a multi-layered structure on said current blocking layer, said multi-layered structure having an active region for laser oscillation.
- 2. A method for producing a semiconductor laser device according to claim 1, wherein said multi-layered structure is formed by liquid phase epitaxy.
Priority Claims (1)
Number |
Date |
Country |
Kind |
63-334138 |
Dec 1988 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 07/455,574 filed, Dec. 22, 1989, now U.S. Pat. No. 5,054,031.
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JPX |
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Non-Patent Literature Citations (3)
Entry |
Matsubara et al., Mitsubishi Electronics Technology Journal (1988) 62(7):566-569. |
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Divisions (1)
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Number |
Date |
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Parent |
455574 |
Dec 1989 |
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