Semiconductor laser diode device

Abstract

The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A schematically shows a layer structure of a BeZeSeTe-based LED prepared on an InP Substrate in the conventional art;

FIG. 1B schematically shows a band line-up of a BeZeSeTe-based LED prepared on an InP Substrate in the conventional art;

FIG. 2A is a view showing the dependence of the energy level of a conduction band and a valence band in a clad on the beryllium content (atomic %);

FIG. 2B is a view showing the calculation result (1) for the dependence of the refractive index on the beryllium content (atomic %);

FIG. 3A is a view showing the dependence of the energy level of a conduction band and a valence band in a cladding layer on the beryllium content (atomic %);

FIG. 3B a view showing the calculation result (2) for the dependence of the refractive index on the beryllium content (atomic %);

FIG. 4A is a view showing the dependence of the energy level of a conduction band and a valence band in a clad on the beryllium content (atomic %);

FIG. 4B is a view showing the calculation result (3) for the dependence of the refractive index on the beryllium content (atomic %);

FIG. 5A is a view showing the result of measurement for a band discontinuity value for each of a specimen having ZnTe on the surface and a specimen having BeZnSeTe on the surface by photoelectron spectroscopy;

FIG. 5B is a view showing the result of measurement for a band discontinuity value for each of a specimen having ZnTe on the surface and a specimen having BeZnSeTe on the surface by photoelectron spectroscopy;

FIG. 6A is a view showing the structure of a specimen for measuring the carrier concentration in a BeMgCdSe layer;

FIG. 6B is a view showing the structure of a specimen for measuring the carrier concentration in a BeMgTe layer;

FIG. 7 is a view showing a structure of a ridge type green semiconductor laser according to a first embodiment of the invention.

FIG. 8 is a view showing a structure of a ridge type green semiconductor laser according to a second embodiment of the invention.

FIG. 9 is a view showing a structure of a dielectric film stripe type green semiconductor laser according to a third embodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the present invention, based on the physical constants of a binary system group II-VI compound semiconductor reported so far, combination of polynary system group II-VI compound semiconductor mixed crystals that satisfy the guide lines (1) to (4) of the invention described above were at first listed up according to the calculation. Successively, such crystals were prepared, and necessary characteristics were measured and compared with the result of calculation. Finally, the effect of the invention was confirmed by trially manufacturing semiconductor lasers comprising a combination of the polynary system group II-VI compound semiconductor mixed crystals.

At first, the relation between the guide lines (1) to (4) for the invention and the invention are described based on the result of calculation. In the calculation, the lattice constant, the band gap, the refractive index, the energy on the upper end of the valance band and the energy of the lower end of the conduction value of the binary system group II-IV compound semiconductors were used and they were put to linear approximation to determine corresponding constants of the polynary system materials. For three types of material systems used in the invention, the relation between the band structure and the content of the invention is to be described.

Case 1

In a semiconductor laser constituted with a group II-VI semiconductor formed above an InP substrate, the basic constitution of the invention has an active layer comprising BeCdSe as a main component, and has a cladding layer comprising BeMgCdSe as a main component. The constitution satisfies the guide line (1). The feature in this case is that not only the clad but also the active layer have beryllium having an effect of suppressing multiplication of crystal defects and dislocations, and that the relevant group VI element comprises one type and the crystal growing can be controlled easily.

FIG. 2A shows the result of calculation for the dependence of the energy level at a conduction band (Ec) and a valence band (Ev) in the BeMgCdSe clad lattice matched with the InP substrate on the beryllium content (atomic percent). FIG. 2B shows a refractive index at a wavelength of 540 nm corresponding thereto. In the calculation, values for the binary system materials reported so far were used and the energy level of the conduction band and the valance band was shown as a difference with the ZnSe valance band. Further, Table 2 shows numerical value data used for the graphs. This material system is II_XII_YII_1-x-yVI type tetranary mixed crystals comprising 3 types of group II elements and 1 type of group VI element and has two degrees of freedom X and Y regarding the composition.

In this case, since lattice matching to the InP substrate is added as one of the conditions, when X (Be composition) is given, Y (Mg composition) and 1-X-Y (Cd composition) are necessarily determined. The ratio of MgSe, CdSe for satisfying the lattice matching condition to the Be composition (BeSe) determined as described above was also shown.

	TABLE 2
	BeSe	MgSe	CdSe	Ev(eV)	Ec(eV)	N
	0.04	0.9	0.06	−0.85	3.08	2.28
	0.06	0.79	0.15	−0.74	3	2.34
	0.08	0.68	0.24	−0.64	2.92	2.39
	0.1	0.56	0.34	−0.54	2.83	2.44
	0.12	0.45	0.43	−0.43	2.75	2.49
	0.14	0.34	0.52	−0.33	2.66	2.54
	0.16	0.22	0.62	−0.22	2.58	2.59
	0.18	0.11	0.71	−0.12	2.49	2.64

In FIG. 2A, a solid line and a broken line for the conduction band show direct transition and indirect transition. It can be seen that the band gap in the BeMgCdSe clad (difference between Ec and Ev) decreases along with increase in the Be content. It can be seen that Be content Y1 in BeMgCdSe capable of lattice matching with InP is within a range: 0.04<Y1<0.18.

Further, to specifically show the content of FIG. 2A, an example of a band line-up is shown on the right of FIG. 2A. This is an example in the case of the Be composition (BeSe mixed crystal ratio) a. Accordingly, the tetranary material of the Be composition (BeSe mixed crystal ratio) a is used for p-type and n-type clads, and Be_0.17Cd_0.83Se is used for the active layer. The band line-up is determined by the corresponding energy of the conduction band and the valence band on the left of FIG. 2A as shown by the dotted chain.

Accordingly, a semiconductor laser constituted with the group II-VI semiconductor formed above the InP substrate in which the cladding layer in the basic constitution of the invention described above has a layer comprising Be_Y1Mg_Z1Cd_1-Y-1-Z1Se as the main component (0.04<Y1<0.18) lattice matched with the InP substrate is proposed. In this case, only the active layer is defined as a layer comprising BeCdSe as the main component and only the cladding layer is referred to with no particular description to the active layer composition, because it is taken into consideration that the effect of the invention can be attained for the active layer referred to in the case 1, also in the active layer with amendment such as addition of other elements to BeCdSe.

In FIG. 2A, two horizontal lines 21, 22 show the conduction band and the valance band in the layer comprising Be_X1Cd_1-X1Se as the main component (X1=0.17). The band gap of this composition is 2.3 eV and oscillation at green color is possible. Further, two horizontal broken lines 23, 24 show energy for the conduction band discontinuity value: ΔEc=300 meV and the energy for the valence band discontinuity: ΔEv=100 meV and, accordingly, the upper and lower regions for each of them satisfy the guide line (2). It is also confirmed that refractive index difference Δn>0.1 in the regions from the FIG. 2B and the guide line (3) described above is satisfied.

Accordingly, a semiconductor laser constituted with the group II-VI semiconductor formed above the InP substrate in which the active layer in the basic constitution of the invention described above has a layer comprising Be_X1Cd_1-X1Se as the main component (0.15<X1<0.20), and a p-cladding layer or an n-cladding layer has a layer comprising Be_Y1Mg_Z1Cd_1-Y1-Z1Se lattice matched with the InP substrate (0.04<Y1<0.14) is proposed. In this case, the allowable range for the composition of the active layer is determined considering the range capable of obtaining the effect of the invention which is practically satisfactory and the manufacturing accuracy in actual device manufacturing steps.

Case 2

In a semiconductor laser constituted with a group II-VI semiconductor formed above an InP substrate, the active layer in another basic constitution of the invention has a layer comprising ZnSeTe as the main component and the cladding layer has a layer comprising BeMgZnTe as the main component in another basic constitution of the invention. Also the constitution satisfies the guide line (1) described above. The feature in this case is that the cladding layer has beryllium having an effect of suppressing the multiplication of crystal defects and dislocations and that the relevant group IV element comprises one type and the crystal growing can be controlled easily.

FIG. 3A shows the result of calculation for the dependence of the energy level at a conduction band (Ec) and a valence band (Ev) in the BeMgZnTe clad lattice matched with the InP substrate on the beryllium content (atomic percent). FIG. 3B shows a refractive index at a wavelength of 540 nm corresponding thereto. In the calculation, values for the binary system materials reported so far were used, and the energy level of the conduction band and the valance band was shown as a difference with the ZnSe valance band. This material system is II_XII_YII_1-x-yVI type tetranary mixed crystals comprising 3 types of group II elements and one type of group VI element and has two degrees of freedom X and Y regarding the composition.

In this case, since lattice matching to the InP substrate is added as one of the conditions, when X is given, 1-x1, Y and 1-X-Y are necessarily determined. FIG. 3 shows numerals data used for the graphs. Also the ratio of MgTe, ZnTe for satisfying the lattice matching condition to the Be composition (BeTe) was also shown.

	TABLE 3
	BeTe	MgTe	ZnTe	Ev(eV)	Ec(eV)	N
	0.5	0.02	0.48	0.72	3.92	2.94
	0.52	0.08	0.4	0.68	3.98	2.88
	0.54	0.13	0.33	0.64	4.05	2.82
	0.56	0.19	0.25	0.59	4.11	2.76
	0.58	0.24	0.18	0.55	4.17	2.7
	0.6	0.29	0.11	0.51	4.23	2.64
	0.62	0.35	0.03	0.46	4.29	2.58

In FIG. 3A, a solid line and a broken line for a conduction band show direct transition and indirect transition. The feature of the case 2 is that since the group VI in the clad is Te, the energy of the valence band is high to easily attain the p-doping at high concentration and the resistance of the device can be lowered. In FIG. 3A, two horizontal lines 21, 22 show the conduction band and the valence band in the layer comprising ZnSe_X1Te_1-X1 as the main component (X1=0.2). The band gap of the composition is 2.3 eV and can oscillate a green color. Further, two horizontal broken lines 23, 24 show the energy of: the conduction band discontinuity value: ΔEc=300 meV and the valence band discontinuity value: ΔEv=100 meV and, accordingly, the respective upper and lower regions satisfy the guide line (2) described above.

It is confirmed from FIG. 3B that the relation: refractive index difference Δn>0.1 is satisfied in the regions and the guide line (3).

Accordingly, by the same consideration as for the case 1, a semiconductor laser constituted with a group II-VI semiconductor formed above the InP substrate in which the cladding layer in another basic constitution of the invention described above comprises Be_Y2Mg_Z2Zn_1-Y2-Z2Te lattice matched with the InP substrate as the main component (0.50<Y2<0.62) is proposed. The Be concentration (0.50<Y2<0.62) shows a compositional range in which BeMgZnTe can lattice match with the InP substrate.

Further, a semiconductor laser in which the active layer according to other basic constitution of the invention described above has a layer comprising ZnSe_X2Te_1-X2 as the main component (0.15<X2<0.25) and the p-cladding layer as a layer comprising Be_Y2Mg_Z2Zn_1-Y2-Z2Te lattice matching with the InP substrate as the main component is proposed. In this case, Y2=0.62 corresponds to Be_0.62Mg_0.38Te ternary mixed crystals not containing Zn. In this case, the Be concentration (0.60<Y2<0.62) shows a range in which the BeMgZnTe cladding layer satisfies the guide lines (2), (3), to the ZnSe_X2Te_1-X2 active layer (X2=0.20), that is, the conduction band discontinuity: ΔEc=300 meV, and the valence band discontinuity value: ΔEv=100 meV, and refractive index difference: Δn>0.1.

Case 3

Finally, a semiconductor laser in which a cladding layer of the semiconductor layer is constituted with the group II-VI semiconductor formed above the InP substrate according to other basic constitution of the invention described above has at least one of a layer comprising BeZnSeTe as the main component, a layer comprising BeCdSeTe as the main component, the layer comprising BeZnSTe as the main component and a layer comprising BeCdSTe as a main component is proposed. The constitution also satisfies the guide line (1). The feature in this case resides in that the cladding layer has beryllium having an effect of suppressing the multiplication of crystal defects and dislocations. This material system is II_XII_1-XVI_YVI_1-Y tetranary mixed crystals comprising two kinds of group II elements and two kinds of group VI elements and has two degrees of freedom X and Y regarding the composition. In this case, since lattice matching with the InP substrate is added as one of the conditions, when X (Be composition) is given, Y (Mg composition) and 1-X-Y (Cd composition) are necessarily determined.

FIG. 4A shows the result of calculation for the dependence of the energy level at a conduction band (Ec) and a valence band (Ev) in the BeZnSeTe,BeCdSeTe,BeCdSTe clads lattice matched with the InP substrate on the beryllium content (atomic percent). FIG. 4B shows a refractive index at a wavelength of 540 nm corresponding thereto. In the calculation, values for the binary system materials reported so far were used, and the energy level of the conduction band and the valance band was shown as a difference with the ZnSe valance band.

In FIG. 4A, a solid line and a broken line for a conduction band show direct transition and indirect transition. In the same manner as in the case 2, the feature of the case 3 is that since the clads include the group VI, the energy of the valence band is high to easily attain the p-doping at high concentration and the resistance of the device can be lowered. In FIG. 4A, two horizontal lines 21, 22 show the conduction band and the valence band in the layer comprising ZnSe_X1Te_1-X1 as the main component (X1=0.2). The band gap of the composition is 2.3 eV and can oscillate a green color. Further, two horizontal broken lines 23, 24 show the energy of: the conduction band discontinuity value: ΔEc=300 meV and the valence band discontinuity value: ΔEv=100 meV and, accordingly, the respective upper and lower regions satisfy the guide line (2) described above.

It is confirmed from FIG. 4B that the relation: refractive index difference Δn>0.1 is satisfied in the regions and the guide line (3).

Accordingly, by the same consideration as in the case 1, a semiconductor laser constituted with the group II-VI semiconductor formed above the InP substrate in which the p-cladding layer according to other basic constitution of the invention described above has at least one of a layer comprising Be_Y4Cd_1-Y4Se_Z4Te_1-Z4 as the main component (0.20<Y4<0.70), a layer comprising Be_Y5Zn_1-5YS_Z5Te_1-Z5 as the main component (0.05<Y5<0.48), a layer comprising Be_Y6Cd_1-Y6S_Z6Te_1-Z6 as the main component (0.05<Y6<0.70), and a layer comprising Be_Y7Zn_1-Y7Se_Z7Te_1-Z7 as the main component (0.05<Y7<0.48) is proposed lattice matched with the InP substrate.

Further, in view of the condition satisfying the guide lines (2) and (3), that is, the conduction band discontinuity value: ΔEc=300 meV, the valence band discontinuity value: ΔEv=100 meV, and the refractive index: Δn>0.1, a semiconductor laser constituted with the group II-VI semiconductor formed above the InP substrate in which the active layer according to other basic constitution of the invention described above has at least one of a layer comprising ZnS_X3Te_1-X3 as the main component (0.12<X3<0.22), and the p-cladding layer has at least one of a layer comprising Be_Y4Cd_1-Y4Se_Z4Te_1-Z4 as the main component (0.46<Y4<0.60), a layer comprising Be_Y5Zn_1-Y5S_Z5Te_1-Z5 as the main component (0.12<Y5<0.24), a layer comprising Be_Y6Cd_1-Y6S₂₆Te_1-Z6 as the main component (0.36<Y6<0.62), and a layer comprising Be_Y7Zn_1-YSe_Z7Te_1-Z7 as the main component (0.20<Y7<0.22), lattice matched with the InP substrate is proposed.

In the invention, a so-called superlattice structure is not used for the cladding layer but it comprises the bulk tetranary or ternary crystals as the main component described above in accordance with the guide line (4). Further it is not always necessary in the invention that the active layer and the cladding layer are constituted only with the components described above but the intended effect can be attained in a case where the composition ratio thereof is 80% or more. For example, BeMgCdZnSeTe formed by mixing the cladding layer BeMgCdSe having the composition of the case 1 with the cladding layer BeMgZnTe having the composition of the case 2 at an optional ratio can control the band gap, the conduction band discontinuity value ΔEc, the valance band discontinuity value ΔEv, and the refractive index difference Δn while satisfying the lattice matching condition to InP. However, it is extremely difficult to control the composition of such a hexanary system material in actual crystal growing which is poor in the practical property. However, controllability can be improved, for example, by devising the apparatus such as a molecular beam epitaxy (MBE) apparatus in view of the number of cells. Further, since MgSe is substantially lattice-matched with InP, mixing of MgSe with the cladding layer is relatively easy. Further, the allowable range for the lattice matching is ±1% in the invention. This is because crystals deteriorate remarkably when the lattice mismatching exceeds ±1%.

Further, in the cases 2, 3 of the invention, ZnSeTe is used as the main component of the active layer. It is possible in this case to add Be and use the BeZnSeTe as the main component of the active layer. In this case, p-clad or n-clad can be selected from BeMgZnTe, BeZnSeTe, BeCdSeTe, BeZnSTe, and BeCdSTe of the cladding materials shown in the cases 2 and 3.

Further, based on the proposals described above, the present invention proposes the guide line regarding the optical guide layer disposed between the active layer and the cladding layer. The optical guide layer satisfies the guide line (3) described above. That is, the optical guide layer is constituted with a material of a composition in which the lattice-matched active layer material and the lattice-matched cladding layer material are mixed at an appropriate ratio. Specifically, the active layer is constituted with Be_X7Cd_Y7Zn_1-X7-Y7Se_Z7Te_1-Z7 as the main component, or the active layer is constituted by a quantum well structure and the well layer of the quantum well is constituted with Be_X7Cd_Y7Zn_1-X7-Y7Se_Z7Te_1-Z7. The n-cladding layer is constituted with the cladding material Be_Z8Cd_Y8Zn_1-X8-Y8Se_Z8Te_1-Z8 described in the cases 2, 3. In this case, by constituting the optical guide layer on the side of the n-cladding layer with A (Be_Z7Cd_Y7Zn_1-X7-Y7Se_Z7Te_1-Z7)+(1-A) (Be_X7Cd_Y7Zn_1-X7-Y7Se_Z7Te_1-Z7) in which 0<A<1, the optical guide layer can be constituted with a material of a composition in which the active layer material and the cladding layer material are mixed at an appropriate ratio. In the same manner, by constituting the p-cladding layer with the cladding material Be_X9Cd_Y9Zn_1-X9-Y9Se_Z9Te_1-Z9 described in the cases 2, 3 and constituting the optical guide layer on the side of the p-cladding layer with B (Be_x7Cd_Y7Zn_1-X7-Y7Se_Z7Te_1-Z7)+(1-B) (Be_X9Cd_Y9Zn_1-X9-Y9Se_Z9Te_1-Z9), in which 0<B<1, the optical guide layer can be constituted with a material of a composition in which the active layer material and the cladding layer material are mixed at an appropriate ratio can be constituted. The optical guide layer as described above have values intermediate of the active layer and the cladding layer for each of the band gap, the energy at the lower end of the conduction band, the energy at the upper end of the valence band, and the refractive index. As a result, the type II connection transported to an exclusive group II-VI growing chamber and irradiation of Zn molecular beams and growing of a low temperature ZnCdSe buffer layer (layer thickness: 100 nm) were conducted at a substrate temperature of 200° C., and then a 500 nm BeZnSeTe layer substantially matched with the InP substrate and a 5 nm ZnTe cap layer were successively stacked at a substrate temperature of 300° C. to prepare a specimen A.

A portion of the specimen was cut out and the ZnTe layer on the surface was removed by Br-system wet etching to prepare a specimen B having BeZnSeTe on the surface.

The composition of BeZnSeTe was identified as Be_0.14Zn_0.86Se_0.38Te_0.62 from measurement by X-ray diffractiometry or photoluminescence method (HeCd laser excitation, measured at room temperature). The valence band discontinuity value for the case of connecting specimens A and B, that is, ZnTe/BeZnSeTe was evaluated. Photoelectron spectroscopy was used for the measurement. In the measurement, the core level binding energy of the common atom Te of the two specimens was used as the reference and the energy E_core/v up to the upper end of each valence band from reference position was measured.

FIGS. 5A, 5B are views showing the result of measuring band discontinuity values for a specimen having ZnTe on the surface and a specimen having BeZnSeTe on the surface respectively. The left side of the drawing shows signals of the 3d orbit for Te and the right side of the drawing shows signals from the valence band. E_core/v(ZnTe)=572.32 eV for ZnTe and E_core/v(BeZeSeT)=572.00 eV for BeZnSeTe. As a result, the valance band discontinuity value ΔEv, that is, the energy difference ΔEv for the upper end of the valance band between both of them is determined as: E_core/v(ZnTe)−E_core/v(BeZnSeTe)=0.32 eV. The value showed good agreement with ΔEv=0.30 eV determined from the calculation. Then, the conduction band discontinuity value ΔEc was determined based on the value described above. ΔEc can be determined by using band gaps Eg(ZnTe) and Eg(BeZnSeTe) for ZnTe and BeZnSeTe, based on ΔEc=ΔEv+{Eg(ZnTe)−Eg(BeZnSeTe)}.

In this case, the band gap was determined by the measurement for the photoluminescence and the absorption spectrum. As a result, the conduction band discontinuity value: ΔEc=−0.7 eV of ZnTe/BeZnSeTe was determined. Since the sign is different between ΔEv and ΔEc, it can be seen that the ZnTe/BeZnSeTe hetero junction is the type II connection.

Table 4 shows the valence band discontinuity value ΔEv and the conduction band discontinuity value ΔEc for 4 types of material systems determined by the same measuring method.

TABLE 4
Case	Cladding layer	Active layer	Band discontinuity values
	BeMgCdSe	BeCdSe	ΔEv (ev)	ΔEc (ev)
	Be	Mg	Cd	Se	Be	Cd	Se	Calculated	Measured	Calculated	Measured
1	0.10	0.55	0.35	1.00	0.17	0.82	1.00	0.53	0.50	0.51	0.47
	BeMgTe	ZnSeTe	ΔEv (ev)	ΔEc (ev)
	Be	Mg	Zn	Te	Zn	Se	Te	Calculated	Measured	Calculated	Measured
2	0.62	0.38	0.00	1.00	1.00	0.20	0.80	0.16	0.13	1.91	1.70
	BeCdSeTe	ZnSeTe	ΔEv (ev)	ΔEc (ev)
	Be	Cd	Se	Te	Zn	Se	Te	Calculated	Measured	Calculated	Measured
3	0.30	0.70	0.80	0.20	1.00	0.20	0.80	0.53	0.42	0.42	0.47
	BeZnSeTe	ZnSeTe	ΔEv (ev)	ΔEc (ev)
	Be	Zn	Se	Te	Zn	Se	Te	Calculated	Measured	Calculated	Measured
	0.17	0.83	0.33	0.67	1.00	0.20	0.80	0.13	0.10	0.90	0.85

Each of the combination was adopted as BeMgCdSe/BeCdSe for the case 1, BeMgTe/ZnSeTe for the case 2 and BeCdSeTe/ZnSeTe and BeZnSeTe/ZnSeTe for the case 3, respectively. Accordingly, six types of crystal specimens of BeMgCdSe, BeCdSe, BeMgTe, ZnSeTe, BeCdSeTe, and BeZnSeTe were prepared. The preparation procedures are shown below.

At first, after subjecting the InP substrate to an optimal surface treatment, it is set in an MBE apparatus. It is placed in a preparatory chamber for specimen exchange, which is evacuated to 10⁻³ Pa or lower by a vacuum pump, and heated up to 100° C. to dissociate the residual water content and impurity gases. Then, it is transported to an exclusive group III-V growing chamber, the oxide film on the substrate surface was removed by heating the substrate temperature to 500° C. while irradiating P molecular beams to the substrate surface, then an InP buffer layer was grown to 30 nm layer thickness at a substrate temperature of 450° C., and then an InGaAs buffer layer was grown to 200 nm layer thickness at a substrate temperature of 470° C. Then, the specimen is transported to an exclusive group II-VI growing chamber and irradiation of Zn molecular beams and growing of a low temperature ZnCdSe buffer layer (layer thickness: 100 nm) were conducted at a substrate temperature of 200° C., and then a layer to be measured was grown to 500 nm to 1,000 nm at a substrate temperature of 300° C.

At first, lattice mismatching to the InP substrate and the band gap were measured for six types of specimens by X-ray diffractiometry, photoluminescence and absorption spectrometry. The band mismatching of the specimens was 1% or less. Table 4 shows the mixed crystal compositions determined by the band gap and the lattice mismatching.

The energy at the upper end of the valance band was determined by the method described above according to photoelectron spectroscopy. The valance band discontinuity value ΔEv was calculated by using Te or Se as a common core atom. The conduction band discontinuity value ΔEc was determined by using the result and the band gap measured value.

The result is shown in Table 4. ΔEv, ΔEc were 0.50 eV and 0.47 eV for BeMgCdSe/BeCdSe of the case 1, 0.13 eV and 1.70 eV for BeMgTe/ZnSeTe of the case 2, and 0.42 eV, and 0.47 eV for BeCdSeTe/ZnSeTe of the case 3, and 0.10 eV and 0.85 eV for BeZnSeTe/ZnSeTe of the case 3. Table 4 shows the result of calculation determined by the linear calculation for reference. For four types of hetero connection, the result of calculation substantially agreed with the result of measurement.

From the foregoings, it is considered that the result of calculation of FIGS. 2, 3 and 4 have a sufficient accuracy. Each of the values satisfies the basic guide line (2) described above. Accordingly, it can be seen that the compositional range in the invention is effective for the improvement of the characteristics of Be-containing group II-VI semiconductor lasers.

Then, the result of a doping experiment to the material system for use in the cladding layer of the invention is to be shown.

FIG. 6A shows a structure of a device for use in measurement of a carrier concentration in trially manufactured n-doped BeMgCdSe. For the dopant, ZnCl₂ was used and three types of specimens of different doping concentrations were prepared. The preparation procedures are shown below.

At first, after subjecting the InP substrate to an optimal surface treatment, it was set in an MBE apparatus. It is placed in a preparatory chamber for specimen exchange, which is evacuated to 10⁻³ Pa or lower by a vacuum pump, and heated up to 100° C. to dissociate the residual water content and impurity gases. Then, it was transported to an exclusive group III-V growing chamber, the oxide film on the substrate surface was removed by heating the substrate temperature to 500° C. while irradiating P molecular beams to the substrate surface, then an InP buffer layer 62 was grown to 30 nm layer thickness at a substrate temperature of 450° C., and then an InGaAs buffer layer was grown to 200 nm layer thickness at a substrate temperature of 470° C. Then, the specimen was transported to an exclusive group II-VI growing chamber, Zn molecular beams were irradiated and ZnCdSe low temperature buffer layer 64 was grown to 100 nm layer thickness and then a BeMgCdSe layer 65 was stacked to 0.5 μm layer thickness at a substrate temperature of 300° C. For n-doping, growing was conducted while applying ZnCl₂. The composition determined by X-ray diffractiometry or photoluminescence was Be_0.14Mg_0.30Cd_0.56Se and the band gap was 3.0 eV.

Then, two Schottky electrodes 66 as shown in FIG. 6A were formed by vapor deposition of Ti and Al, and patterning by resist and optical exposure. By using the electrodes, measurement was conducted by a capacitance-voltage (C-V) method at a room temperature to determine the effective donor (n-doping) concentration at the BeMgCdSe layer 65. The maximum doner concentration obtained was 1×10¹⁸ cm⁻³. The result shows that the BeMgCdSe is applicable to the n-clad of the semiconductor laser according to the invention.

FIG. 6B shows a structure of a device for use in measurement of a carrier concentration in trially manufactured p-doped BeMgTe. For the dopant, radical nitrogen doping was used and four types of specimens of different doping concentrations were prepared. The preparation procedures are shown below.

After subjecting the InP substrate 61 to an optimal surface treatment, it was set in an MBE apparatus. It was placed in a preparatory chamber for specimen exchange, which was evacuated to 10⁻³ Pa or lower by a vacuum pump, and heated up to 100° C. to dissociate the residual water content and impurity gases. Then, it was transported to an exclusive group III-V growing chamber, the oxide film on the substrate surface was removed by heating the substrate temperature to 500° C. while irradiating P molecular beams to the substrate surface, then an InP buffer layer 63 was grown to 30 nm layer thickness at a substrate temperature of 450° C., and then an InGaAs buffer layer was grown to 200 nm layer thickness at a substrate temperature of 470° C. Then, the specimen was transported to an exclusive group II-VI growing chamber, Zn molecular beams were irradiated and low temperature ZnCdSe buffer layer 64 was grown to 100 nm layer thickness at a substrate temperature of 200° C. Then a BeMgTe layer 67 was stacked to 0.5 μm layer thickness at a substrate temperature of 300° C. For p-doping, radical nitrogen source was used. The composition determined by X-ray diffractiometry or photoluminescence was Be_0.63Mg_0.37Te and the band gap was 3.8 eV.

Then, two Schottky electrodes 66 as shown in FIG. 6A were formed by vapor deposition of Ti and Al, and patterning by resist and optical exposure. By using the electrodes, measurement was conducted by a capacitance-voltage (C-V) method at a room temperature to determine the effective donor (p-doping) concentration at the BeMgTe layer. The maximum acceptor concentration obtained was 8×10¹⁷ cm⁻³. The result shows that the BeMgTe is applicable to the p-clad of the semiconductor laser according to the invention.

Specific embodiments of the semiconductor laser according to the invention are shown below.

First Embodiment

FIG. 7 shows a structural view of a ridge type green semiconductor laser of the first embodiment according to the invention. In the first embodiment, material constitutions shown previously for the case 1 is applied. In FIG. 7, reference numeral 71 denotes an n-InP substrate; 72, an n-InGaAs buffer layer (film thickness: 0.5 μm); 73, an n-Be_0.10Mg_0.56Cd_0.34Se cladding layer (film thickness: 1 μm); 74, an undope active layer including a multiple quantum well structure; 75, a p-type Be_0.10Mg_0.56Cd_0.34Se cladding layer (film thickness: 1 μm); and 78, a p-BeZnTe/ZnTe composition modified superlattice contact layer. The active layer 74 is constituted as a structure where both sides of a multiple quantum well constituted with each three periods of Be_0.17Cd_0.83Se well layers (film thickness: 5 nm) and Be_0.14Mg_0.28Cd_0.58Se barrier layers (film thickness: 5 nm) are sandwiched by a Be_0.14Mg_0.28Cd_0.58Se optical guide layer (film thickness: 20 nm) 74′, 74″. An n-electrode 70 is for the AuGeNi/Pt/Au layer and a p-electrode 79 is for the Ni/Ti/Pt/Au layer. A polyimide protective film 76 and an SiN protective film 77 are used respectively for planarizing the upper surface.

For crystal growing, a 2-chamber molecular beam epitaxy apparatus having chambers for group III-V and group II-VI were used. The growing temperatures for group III-V (GaInAs) and group II-VI are 500° C. and 280° C. respectively. Zn irradiation is conducted for suppressing the occurrence of dislocation at the boundary between both of them. ZnCl₂ and RF-nitrogen plasma source are used for n- and p-dopants for the group II-VI. To form the ridge, a wet etching is performed with a mixed solution of chromic acid and bromic acid. After forming an SiN protective layer by a plasma CVD method, a polyimide is coated and the upper surface of the device is planarized by etching back using a CF₄ asher. Electron beam vapor deposition is used for the formation of the electrodes 70, 79. The width at the upper surface of the mesa is 6 μm and the device length of the laser formed by cleaving is about 800 μm.

The device of the first embodiment oscillates continuously at a room temperature. The oscillation wavelength is 530 nm, the threshold current is 28 mA, and the maximum optical output is 55 mW.

Further, a similar device having Be_0.20Cd_0.80Se in the p-cladding layer, the n-cladding layer, and the optical guide layer was trially manufactured and compared. While Be_0.20Cd_0.80Se substantially lattice matched with the InP substrate 71, it is a material out of the BeSe crystal mixing ratio Y (0.04<Y<0.18) of the invention. While the trially manufactured device shows continuous oscillation at a room temperature, the threshold current increases nearly by about one digit as 250 mA compared with the foregoing result. This is considered to be a result showing the effectiveness of the invention.

Second Embodiment

FIG. 8 shows a structural view of a ridge type green semiconductor laser of the second embodiment according to the invention. In the second embodiment, material constitutions shown previously for the case 2 is applied (the material constitution shown in the case 2 is applied for the second embodiment). In FIG. 8, reference numeral 81 denotes an n-InP substrate; 82, an n-InGaAs buffer layer (film thickness: 0.5 μm); 83, an n-Be_0.24Zn_0.76Se_0.27Te_0.73 cladding layer (film thickness: 1 μm); 84, an undope active layer including a multiple quantum well structure; 85, a p-type Be_0.62Mg_0.38Te cladding layer (film thickness: 1 μm); and 88, a p-BeZnTe/ZnTe composition modified superlattice contact layer. The active layer 84 is constituted as a structure where both sides of a multiple quantum well constituted with each three periods of ZnSe_0.2Te_0.8 well layers (film thickness: 5 nm) and Be_0.12Zn_0.88Se_0.23Te_0.77 barrier layers (film thickness: 5 nm) are sandwiched by a Be_0.12Zn_0.88Se_0.23Te_0.77 optical guide layers (film thickness: 20 nm) 84′, 84″. Reference numerals 80, 89 denote an n-electrode for the AuGeNi/Pt/Au layer and a p-electrode for the Ni/Ti/Pt/Au layer respectively, 86 denotes an SiN protective film, and 88 denotes a p-BeZnTe/ZnTe composition modified superlattice contact layer. The device preparation method is identical substantially with the first embodiment except for the polyimide planarizing step.

The device of the second embodiment oscillates continuously at a room temperature. The oscillation wavelength is 550 nm, the threshold current is 40 mA, and the maximum optical output is 40 mW.

Further, a similar device having a composition of Be_0.50Mg_0.02Zn_0.48Te of a p-cladding layer was trially manufactured and compared. While Be_0.50Mg_0.02Zn_0.48Te was substantially lattice matched with the InP substrate, this is a material out of the BeTe mixed crystal ratio Y (0.60<Y<0.62) of the invention. In the trially manufactured device, the continuous oscillating operation at a room temperature cannot be confirmed. The result is considered to be an example showing the validity of the estimated in the invention.

Third Embodiment

FIG. 9 shows a structural view of a dielectric film stripe type green semiconductor laser of a third embodiment according to the invention. In the third embodiment, the material constitution shown previously in the case 3 is applied. In FIG. 9, reference numerals 91 denotes an n-InP substrate; 92, an n-InGaAs buffer layer (film thickness d=0.5 μm); 93, an n-cladding layer (film thickness: 1 μm); 94, a ZnSe_0.2Te_0.8 undope active layer (bulk single layer); 95, a p-cladding layer (film thickness: 1 μm); and 96, a p-BeZnTe/ZnTe composition modified superlattice contact layer. Reference numerals 90 and 99 denote, respectively, an n-electrode for the AuGeNi/Pt/Au layer and a p-electrode for the Ni/Ti/Pt/Au layer; and 98, an SiN dielectric film for current blocking. The method of preparing the device is basically identical with that in the first embodiment. In the third embodiment, devices of four types A, B, C, and D with the compositional ratio for the n-cladding layer 93 and the p-cladding layer 95 being changed as shown in Table 5 are prepared.

TABLE 5
		Oscillation		Maximum
		at room	Threshold	optical	Oscillation
Device	Cladding layer	temperature	current	output	wavelength
A	Be0.24Zn0.76Se0.27Te0.73	√	50 mA	40 mW	540 nm
B	Be0.24Zn0.76S0.17Te0.83	√	55 mA	40 mW	545 nm
C	Be0.40Zn0.60Se0.60Te0.40	√	80 mA	30 mW	542 nm
D	Be0.40Zn0.60S0.39Te0.61	√	70 mA	25 mW	535 nm

Table 5 shows the obtained device characteristics. Each of the devices oscillates continuously at a room temperature, although the threshold current and the maximum optical output are inferior to those of the first and the second embodiments. It is considered that the characteristics of the third embodiment inferior to those of the first and the second embodiments can be improved by replacing the undope active layer 94 which is a bulk single layer of the third embodiment with a multiple quantum active layer.

Since the semiconductor laser oscillating at a green color obtained in the invention has a high visual sensitivity, a display at a high sensitivity with low optical output is possible. Accordingly, compared with existent display systems by a red laser, etc. safety to eyes is improved. Further, by combination with red and blue semiconductor lasers, a full color small-sized display can be constructed. This provides a possibility capable of application to displays in the form not present in the prior art, micro projection devices, spectacle type displays of wearable PC, vehicle mounted front glass projection head up displays, etc.

Description for reference numerals used in the drawings of the application are as shown below.

• 61 . . . InP substrate,
• 62 . . . InP buffer layer,
• 63 . . . InGaAs buffer layer,
• 64 . . . ZnCdSe low temperature buffer layer,
• 65 . . . BeMgCdSe layer,
• 66 . . . Schottky type two electrodes,
• 67 . . . BeMgTe layer,
• 70 . . . AuGeNi/Pt/Au n-electrode,
• 71 . . . n-InP substrate,
• 72 . . . n-InGaAs buffer layer,
• 73 . . . n-Be_0.10Mg_0.56Cd_0.34Se cladding layer,
• 74 . . . undope active layer containing multiple quantum structure,
• 75 . . . p-Be_0.10Mg_0.56Cd_0.34Se cladding layer,
• 76 . . . SiN protective film,
• 77 . . . polyimide,
• 78 . . . p-BeZnTe/ZnTe composition modified superlattice contact layer,
• 79 . . . Ni/Ti/Pt/Au p-electrode,
• 80 . . . AuGeNi/Pt/Au n-electrode,
• 81 . . . n-InP substrate,
• 82 . . . n-InGaAs buffer layer,
• 83 . . . n-Be_0.24Zn_0.76Se_0.27Te_0.73 cladding layer,
• 84 . . . undope active layer containing a multiple quantum structure,
• 85 . . . p-Be_0.62Mg_0.38Te cladding layer,
• 86 . . . SiN protective layer,
• 88 . . . p-BeZnTe/ZnTe composition modified superlattice contact layer,
• 89 . . . Ni/Ti/Pt/Au p-electrode,
• 90 . . . AuGeNi/Pt/Au n-electrode,
• 91 . . . n-InP substrate,
• 92 . . . n-InGaAs buffer layer,
• 93 . . . n-cladding layer,
• 94 . . . undope active layer,
• 95 . . . p-cladding layer,
• 96 . . . SiN protective film,
• 98 . . . p-BeZnTe/ZnTe composition modified superlattice contact layer,
• 99 . . . Ni/Ti/Pt/Au p-electrode.

Claims

1. A semiconductor laser comprising an active layer, a p-cladding layer, and an n-cladding layer which are formed above an InP substrate, wherein the semiconductor laser has a band line-up of a double hetero structural type where the difference of energy at the end of the valence band is 50 meV or more and the difference of the energy at the end of the conduction band is 100 meV or more between the active layer and the p- and n-cladding layers;wherein the active layer has a BeCdSe content of 80% or more and 100% or less relative to the total of elements that constitute the active layer, or the active layer is constituted with a quantum well structure and has a BeCdSe content of 80% or more and 100% or less relative to the total of elements that constitute the well layer of the quantum well; andwherein the p- and n-cladding layers have a BeMgCdSe content of 80% or more and 100% or less relative to the total of constituent elements that constitute the cladding layer.

2. The semiconductor laser according to claim 1, wherein the difference of the energy at the end of the valance band is 200 meV or more instead of 50 meV or more; andwherein the difference of the energy at the end of the conduction band is 300 meV or more instead of 100 meV or more.

3. The semiconductor laser according to claim 2, wherein the p-cladding layer or the n-cladding layer has a BeMgCdSe content of 80% or more and 100% or less relative to the total of the elements constituting the cladding layer;wherein the cladding layer having the BeMgCdSe content of 80% or more and 100% or less is lattice-matched to the InP substrate at a lattice mismatching degree of +1%; andwherein the compositional ratio of BeMgCdSe in the cladding layer is BeY1MgZ1Cd1-Y1-Z1Se, and the Be compositional ratio Y1 satisfies the relationship of 0.04<Y1<0.18.

4. The semiconductor laser according to claim 2, wherein each of the compositional ratios of BeCdSe of the active layer is BeX1Cd1-X1Se, and the Be compositional ratio X1 satisfies the relationship of 0.15<X1<0.20;wherein the p-cladding layer or the n-cladding layer has a BeMgCdSe content of 80% or more and 100% or less relative to the total of the elements constituting the cladding layer;wherein the cladding layer having the BeMgCdSe content of 80% or more and 100% or less is lattice-matched to the InP substrate at a lattice mismatching degree of ±1%; andwherein the compositional ratio of BeMgCdSe in the cladding layer is BeY1MgZ1Cd1-Y1-Z1Se, and the Be compositional ratio Y1 satisfies the relationship of 0.04<Y1<0.18.

5. A semiconductor laser comprising an active layer, a p-cladding layer, and an n-cladding layer, which are formed above an InP substrate, wherein the semiconductor laser has a band line-up of a double hetero structural type where the difference of energy at the end of the valence band is 50 meV or more and the difference of the energy at the end of the conduction band is 100 meV or more between the active layer and the p- and n-cladding layers;wherein the active layer has a ZnSeTe content of 80% or more and 100% or less relative to the total of elements that constitute the active layer, or the active layer is constituted with a quantum well structure and has a ZnSeTe content of 80% or more and 100% or less relative to the total of elements that constitute the well layer of the quantum well; andwherein the cladding layer has a BeMgznTe content of 80% or more and 100% or less relative to the total of constituent elements that constitute the cladding layer.

6. The semiconductor laser according to claim 5, wherein the difference of the energy at the end of the valance band between the active layer and the p- and the n-type cladding layer is 100 meV or more instead of 50 meV or more; andwherein the difference of energy at the end of the conduction band is 300 meV or more instead of 100 meV.

7. The semiconductor laser according to claim 6, wherein the p-cladding layer or the n-cladding layer has a BeMgZnTe content of 80% or more and 100% or less relative to the total of the constituent elements constituting the cladding layer;wherein the cladding layer having the BeMgZnTe content of 80% or more and 100% or less is lattice-matched to the InP substrate at a lattice mismatching degree of ±1%; andwherein the compositional ratio of BeMgZnTe in the cladding layer is BeY2MgZ2Zn1-Y2-Z2Se, and the Be compositional ratio Y2 satisfies the relationship of 0.50<Y2<0.62.

8. The semiconductor laser according to claim 6, wherein each of the compositional ratios of ZnSeTe of the active layer is BeX1Cd1-X1Se, and the Be compositional ratio X1 satisfies the relationship of 0.15<X1<0.25;wherein the p-cladding layer or the n-cladding layer has a BeMgZnTe content of 80% or more and 100% or less relative to the total of the constituent elements constituting the cladding layer;wherein the cladding layer having the BeMgZnTe content of 80% or more and 100% or less is lattice-matched to the InP substrate at a lattice mismatching degree of ±1%, andwherein the compositional ratio of BeMgZnTe in the cladding layer is BeY2MgZ2Zn1-Y2-Z2Te, and the Be compositional ratio Y2 satisfies the relationship of 0.50<Y2<0.62.

9. The semiconductor laser according to claim 8, wherein the Be compositional ratio Y2 satisfying the relationship of 0.50<Y2<0.62 in the BeMgZnTe cladding layer is replaced with the Be compositional ratio Y2 satisfying the relationship of 0.60<Y2<0.62.

10. A semiconductor laser comprising an active layer, a p-cladding layer, and an n-cladding layer, which are formed above an InP substrate, wherein the semiconductor laser has a band line-up of a double hetero structural type where the difference of energy at the end of the valence band is 50 meV or more and the difference of the energy at the end of the conduction band is 100 meV or more between the active layer and the p- and n-cladding layers;wherein the active layer has a ZnSeTe content of 80% or more and 100% or less relative to the total of elements that constitute the active layer, or the active layer is constituted with a quantum well structure and has a ZnSeTe content of 80% or more and 100% or less relative to the total of elements constituting the well layer of the quantum well; andwherein the cladding layer has at least one layer selected from a layer having a BeCdSTe content of 80% or more and 100% or less relative to elements constituting the cladding layer, a layer having a BeCdSeTe content of 80% or more and 100% or less relative to the elements constituting the cladding layer, a layer having a BeZnSTe content of 80% or more and 100% or less relative to the elements constituting the cladding layer, and a layer having a BeZnSeTe content of 80% or more and 100% or less relative to the elements constituting the cladding layer.

11. The semiconductor laser according to claim 10, wherein the difference of the energy at the end of the valance band between the active layer and the p- and the n-type cladding layer is 100 meV or more instead of 50 meV or more; andwherein the difference of energy at the end of the conduction band is 300 meV or more instead of 100 meV.

12. The semiconductor laser according to claim 11, wherein each of the cladding layers is lattice-matched to the InP substrate at a lattice mismatching degree within ±1%; andwherein the compositional ratio of BeCdSTe in the cladding layer is BeY3Cd1-Y3SZ3Te1-Z3 and the compositional ratio Y3 satisfies the relationship of 0.05<Y3<0.70;or the compositional ratio of BeCdSeTe in the cladding layer is BeY4Cd1-Y4SeZ4Te1-Z4 and the compositional ratio Y4 satisfies the relationship of 0.20<Y4<0.70; or the compositional ratio of BeZnSTe in the cladding layer is BeY5Zn1-Y5SZ5Te1-Z5 and the compositional ratio Y5 satisfies the relationship of 0.05<Y5<0.48; or the compositional ratio of BeZnSeTe in the cladding layer is BeY6Zn1-Y6SeZ6Te1-Z6 and the compositional ratio Y6 satisfies the relationship of 0.05<Y6<0.48.

13. The semiconductor laser according to claim 10, wherein each of the compositional ratios of ZnSeTe in the active layer is ZnSeX3Te1-X3 and the Se compositional ratio X3 satisfies the relationship of 0.15<X2<0.25; or the p-cladding layer or n-cladding layer is lattice-matched with the InP substrate at a lattice mismatching degree within ±1%, and the compositional ratio of BeCdSTe in the cladding layer is BeY3Cd1-Y3SZ3Te1-Z3 and the Be compositional ratio Y3 satisfies the relationship of 0.05<Y3<0.70; or the p-cladding layer or n-cladding layer is lattice-matched with the InP substrate at a lattice mismatching degree within ±1%, and the compositional ratio of BeCdSeTe in the cladding layer is BeY4Cd1-Y4SeZ4Te1-Z4 and the Be compositional ratio Y4 satisfies the relationship of 0.20<Y4<0.70; or the p-cladding layer or n-cladding layer is lattice-matched with the InP substrate at a lattice mismatching degree within ±1%, and the compositional ratio of BeZnSTe in the cladding layer is BeY5Zn1-Y5SZ5Te1-Z5 and the Be compositional ratio Y5 satisfies the relationship of 0.05<Y6<0.48; or the p-cladding layer or n-cladding layer is lattice-matched with the InP substrate at a lattice mismatching degree within ±1%, and the compositional ratio of BeZnSeTe in the cladding layer is BeY6Zn1-Y6SeZ6Te1-Z6 and the Be compositional ratio Y5 satisfies the relationship of 0.05<Y6<0.48.

14. The semiconductor laser according to claim 13, wherein the Be compositional ratio Y3 in the BeCdSTe cladding layer satisfies the relationship of 0.36<Y3<0.62, instead of the relationship of 0.05<Y3<0.70; orthe Be compositional ratio Y4 in the BeCdSeTe cladding layer satisfies the relationship of 0.46<Y4<0.60, instead of the relationship of 0.20<Y4<0.70; or the Be compositional ratio Y5 in the BeZnSTe cladding layer satisfies the relationship of 0.12<Y5<0.24, instead of the relationship of 0.05<Y5<0.48; or the Be compositional ratio Y6 in the BeZnSeTe cladding layer satisfies the relationship of 0.20<Y6<0.22, instead of the relationship of 0.05<Y6<0.48.

15. The semiconductor laser according to claim 6, wherein the elements ZnSeTe constituting the active layer are replaced with BeZnSeTe, and the active layer has a BeZnSeTe content of 80% or more and 100% or less relative to the total of elements constituting the active layer, or the active layer is constituted with a quantum well structure and the well layer of the quantum well has a BeZnSeTe content of 80% or more and 100% or less relative to the total of the elements constituting the well layer;wherein the p-cladding layer or the n-cladding layer has a BeMgZnTe content of 80% or more and 100% or less relative to the constituent elements constituting the cladding layer;wherein the cladding layer having the BeMgZnTe content of 80% or more and 100% or less is lattice-matched to the InP substrate at a lattice mismatching degree within ±1%; andwherein the compositional ratio of BeMgZnTe in the cladding layer is BeY2MgZ2Zn1-Y2-Z2Te, and the Be compositional ratio Y2 satisfies the relationship of 0.50<Y2<0.62.

16. The semiconductor laser according to claim 11, wherein the elements ZnSeTe constituting the active layer are replaced with BeZnSeTe, and the active layer has a BeZnSeTe content of 80% or more and 100% or less relative to the total of the elements constituting the active layer, or the active layer is constituted with a quantum well structure and the well layer of the quantum well has a BeZnSeTe content of 80% or more and 100% or less relative to the elements constituting the well layer of the quantum well; andwherein the compositional ratio of BeCdSTe in the cladding layer is BeY3Cd1-Y3SZ3Te1-Z3, and the Be compositional ratio Y3 satisfies the relationship of 0.05<Y3<0.70; or the compositional ratio of BeCdSeTe in the cladding layer is BeY4Cd1-Y4SeZ4Te1-Z4 and the Be compositional ratio Y4 satisfies the relationship of 0.20<Y4<0.70; or the compositional ratio of BeZnSTe in the cladding layer is BeY5Zn1-Y5SZ5Te1-Z5, and the Be compositional ratio Y5 satisfies the relationship of 0.05<Y5<0.48; or the compositional ratio of BeZnSeTe in the cladding layer is BeY6Zn1-Y6SeZ6Te1-Z6, and the Be compositional ratio Y6 satisfies the relationship of 0.05<Y6<0.48.

17. The semiconductor laser according to claim 4, wherein the main component of the active layer or the quantum well constituting the active layer is expressed as BeX7CdY7Zn1-X7-Y7SeZ7Te1-Z7 and the main component of the cladding layer is expressed as BeX8CdY8MgZ8Zn1-X8-Y8-Z8SU8SeV8Te1-U8-V8, an optical guide layer is interposed between the active layer and the cladding layer; andthe main component occupying 80% or more of the optical guide layer is constituted with A (BeX7CdY7Zn1-X7-Y7SeZ7Te1-Z7)+(1-A) (BeX8CdY8MgZ8Zn1-X8-Y8-Z8SU8SeV8Te1-Y8-V8) where 0<A<1.

18. The semiconductor laser according to claim 8, wherein the main component of the active layer or the quantum well constituting the active layer is expressed as BeX7CdY7Zn1-X7-Y7SeZ7Te1-Z7 and the main component of the cladding layer is expressed as BeX8CdY8MgZ8Zn1-X8-Y8-Z8SU8SeV8Te1-U8-V8, an optical guide layer is interposed between the active layer and the cladding layer; andthe main component occupying 80% or more of the optical guide layer is constituted with A (BeX7CdY7Zn1-X7-Y7SeZ7Te1-Z7)+(1-A) (BeX8CdY8MgZ8Zn1-X8-Y8-Z8SU8SeV8Te1-U8-V8) where 0<A<1.

19. The semiconductor laser according to claim 13, wherein the main component of the active layer or the quantum well constituting the active layer is expressed as BeX7CdY7Zn1-X7-Y7SeZ7Te1-Z7 and the main component of the cladding layer is expressed as BeX8CdY8MgZ8Zn1-X8-Y8-Z8SU8SeV8Te1-U8-V8, an optical guide layer is interposed between the active layer and the cladding layer; and the main component occupying 80% or more of the optical guide layer is constituted with A (BeX7CdY7Zn1-X7-Y7SeZ7Te1-Z7)+(1-A) (BeX8CdY8MgZ8Zn1-X8-Y8-Z8SU8SeV8Te1-U8-V8) where 0<A<1.

20. The semiconductor laser according to claim 11, wherein the main component of the active layer or the quantum well constituting the active layer is expressed as BeX7CdY7Zn1-X7-Y7SeZ7Te1-Z7 and the main component of the cladding layer is expressed as BeX8CdY8MgZ8Zn1-X8-Y8-Z8SU8SeV8Te1-U8-V8, an optical guide layer is interposed between the active layer and the cladding layer; and the main component occupying 80% or more of the optical guide layer is constituted with A (BeX7CdY7Zn1-X7-Y7SeZ7Te1-Z7)+(1-A) (BeX8CdY8MgX8Zn1-X8-Y8-Z8SU8SeV8Te1-U8-V8) where 0<A<1.

21. The semiconductor laser according to claim 16, wherein the main component of the active layer or the quantum well constituting the active layer is expressed as BeX7CdY7Zn1-X7-Y7SeZ7Te1-Z7 and the main component of the cladding layer is expressed as BeX8CdY8MgZ8Zn1-X8-Y8-Z8SU8SeV8Te1-U8-V8, an optical guide layer is interposed between the active layer and the cladding layer; and the main component occupying 80% or more of the optical guide layer is constituted with A (BeX7CdY7Zn1-X7-Y7SeZ7Te1-Z7)+(1-A) (BeX8CdY8MgZ8Zn1-X8-Y8-Z8SU8SeV8Te1-U8-V8) where 0<A<1.