Patent Application
20230402820
The present invention relates to a semiconductor laser element, and is suitable to be used in, for example, processing and the like of products.
The present application is a commissioned research under “Development of advanced laser processing with intelligence based on high-brightness and high-efficiency laser technologies/Development of new light-source/elemental technologies for advanced processing/Development of GaN-based high-power high-beam quality semiconductor lasers for highly-efficient laser processing” of the New Energy and Industrial Technology Development Organization for the fiscal year 2016, and is a patent application to which Article 17 of the Industrial Technology Enhancement Act is applied.
In recent years, semiconductor laser elements have been used in processing of various products. In such a semiconductor laser element, in order to enhance the processing quality, it is preferable that light emitted from the semiconductor laser element has a high output power and the proportion of a fundamental mode is increased, with a higher order mode cut as much as possible.
Japanese Laid-Open Patent Publication No. H9-246664 describes a semiconductor laser element including: a rough surface light waveguide mechanism provided at both side walls of a stripe-shaped ridge part at a center in the waveguiding direction; and a parallel smooth surface light waveguide mechanism provided at both ends in the waveguiding direction. Due to the rough surface light waveguide mechanism, loss in the higher order mode is caused, and the proportion of the fundamental mode is increased.
However, in the configuration described in Japanese Laid-Open Patent Publication No. H9-246664, ripples (disturbance) may be caused in a vertical FFP (Far-Field Pattern). In this case, the shape of emission light is significantly shifted from an ideal Gaussian shape. This causes a problem that the quality of laser light emitted from the semiconductor laser element decreases.
A major aspect of the present invention relates to a semiconductor laser element. The semiconductor laser element according to the present aspect includes: a substrate; a first semiconductor layer disposed above the substrate; a light emission layer disposed above the first semiconductor layer; a second semiconductor layer disposed above the light emission layer; and a groove part formed at least at the substrate and the first semiconductor layer. The second semiconductor layer has a ridge part for guiding laser light generated in the light emission layer. A width of the ridge part cyclically changes in accordance with a position in a waveguiding direction of the ridge part. An angle between a side face of the ridge part and the waveguiding direction is larger than a limit angle defined by an effective refractive index on each of an inner side of the ridge part and an outer side of the ridge part. The groove part is disposed on the outer side of the side face at least where the width of the ridge part is small.
According to the semiconductor laser element of the present aspect, since the angle between the side face of the ridge part and the waveguiding direction is set to be larger than the limit angle, laser light in the higher order mode is cut, and the proportion of laser light in the fundamental mode is increased. The groove part is formed at least at the substrate and the first semiconductor layer, and is disposed on the outer side of the side face at least where the width of the ridge part is small. Accordingly, downward movement of the distribution position of laser light propagating at the ridge part (waveguide) is less likely to occur, and thus, ripples in the vertical FFP is suppressed. Thus, while ripples in the vertical FFP are suppressed, the proportion of the fundamental mode can be increased.
The effects and the significance of the present invention will be further clarified by the description of the embodiment below. However, the embodiment below is merely an example for implementing the present invention. The present invention is not limited to the embodiment below in any way.
It should be noted that the drawings are solely for description and do not limit the scope of the present invention by any degree.
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. For convenience, each drawing is provided with, X, Y, and Z axes orthogonal to each other. The X-axis direction is the width direction of a ridge part, and the Y-axis direction is the propagation direction (resonator longitudinal direction) of light at the ridge part. The Z-axis direction is the lamination direction of layers forming a semiconductor laser element, and the Z-axis positive direction is the upward direction.
In the semiconductor laser element 1, a ridge part 40a linearly extending in the Y-axis direction is provided in the vicinity of the center in the X-axis direction. The ridge part forms a waveguide WG that guides laser light. The ridge part propagates, along the ridge part 40a, laser light that is generated in a light emission layer 30 (see
On each outer side of each portion where the width in the X-axis direction of the ridge part 40a is small, a groove part is provided. The groove part 70 has a triangular shape in a top view, and the width in the X-axis direction of the groove part is different in accordance with the position in the Y-axis direction. At a position in the Y-axis direction where the width in the X-axis direction of the ridge part 40a becomes small, the width in the X-axis direction the groove part 70 becomes large. The position in the Z-axis direction of the groove part 70 will be described with reference to
An end face 1a is the end face of the ridge part 40a positioned on the Y-axis positive side, and is the end face on the emission side of the semiconductor laser element 1. An end face 1b is the end face of the ridge part 40a positioned on the Y-axis negative side, and is the end face on the reflection side of the semiconductor laser element 1. An end face coat film is formed at each of the end faces 1a, 1b. When light (forward wave) advancing from the end face 1b side toward the end face 1a side has reached the end face 1a, a part of the forward wave is emitted as emission light from the end face 1a in the Y-axis positive direction, and a part of the forward wave is reflected at the end face 1a to be light (backward wave) advancing from the end face 1a side toward the end face 1b. When the backward wave advances through the ridge part 40a in the Y-axis negative direction and reaches the end face 1b, most of the backward wave is reflected at the end face 1b to be a forward wave. In this manner, the light generated in the semiconductor laser element 1 is amplified between the end face 1a and the end face 1b, to be emitted from the end face 1a.
As shown in
The first semiconductor layer 20 is disposed above the substrate 10. The first semiconductor layer 20 is an n-side clad layer.
The light emission layer 30 is disposed above the first semiconductor layer 20. The light emission layer 30 has a laminated structure in which an n-side light guide layer 31, an active layer 32, and a p-side light guide layer 33 are laminated from the bottom in this order. When a voltage is applied to the semiconductor laser element 1, light is generated and propagates in the light emission layer 30.
The second semiconductor layer 40 is disposed above the light emission layer 30. The second semiconductor layer 40 has a laminated structure in which an electron barrier layer 41, a A-side clad layer 42, and a p-side contact layer 43 are laminated from the bottom in this order.
In an upper portion of the second semiconductor layer 40, the ridge part 40a is formed in the vicinity of the center in the X-axis direction. The ridge part 40a has a shape projecting in the Z-axis positive direction, and has a ridge shape (protrusion shape) extending in the Y-axis direction. Since the ridge part 40a is formed, the waveguide WG is formed so as to correspond to the range in the X-axis direction of the ridge part 40a. Since the ridge part 40a is formed, the side face 40b is formed at each of the end on the X-axis positive side and the end on the X-axis negative side of the ridge part 40a. In an upper portion of the second semiconductor layer 40, a flat part 40c extending in the X-axis direction from the root of the ridge part 40a is formed.
The electrode member 50 is disposed above the second semiconductor layer 40. The electrode member 50 includes a p-side electrode 51 for applying a voltage, and a pad electrode 52 disposed above the p-side electrode 51. The p-side electrode 51 is disposed at the upper face of the ridge part 40a. The p-side electrode 51 is an ohmic electrode that is in ohmic contact with the p-side contact layer 43 above the p-side contact layer 43. The pad electrode 52 has a shape longer in the X-axis direction than the ridge part 40a, and is in contact with the p-side electrode 51 and the dielectric layer 60.
The dielectric layer 60 is disposed above the p-side clad layer 42 on the outer side in the X-axis direction of the ridge part 40a, in order to confine light in the ridge part 40a. Specifically, the dielectric layer 60 is continuously formed from the side face 40b over the flat part 40c. The dielectric layer 60 is implemented by an insulation film having a refractive index lower than that of the ridge part 40a.
The groove part 70 is formed at least at the substrate 10 and the first semiconductor layer 20. In other words, the groove part 70 is formed at least from the lower face of the substrate 10 to the first semiconductor layer 20, to be provided in communication with at least the substrate 10 and the first semiconductor layer 20. Specifically, the groove part 70 is formed from the lower face of the substrate 10 to the first semiconductor layer 20, and a bottom 70a of the groove part 70 is positioned in the first semiconductor layer 20 in the Z-axis direction. The groove part 70 is disposed on the outer side of the ridge part 40a in the X-axis direction. The inside of the groove part 70 is filled with air, and the refractive index (refractive index of air) of the groove part 70 is lower than the refractive index of the first semiconductor layer 20, the light emission layer 30, and the second semiconductor layer 40. With the groove part 70, occurrence of ripples (disturbance) in the vertical FFP can be suppressed, as described later with reference to
In the present embodiment, since the cross section of the groove part 70 has a rectangular shape, the inner end and the outer end in the X-axis direction of the groove part 70 become parallel to the Z-axis direction. Accordingly, in the vicinity of a position P1 at the inner end and in the vicinity of a position P2 at the outer end, an interface is caused at each layer as indicated by a broken line, and laser light in a higher order mode is scattered by this interface.
The n-side electrode 80 is disposed below the substrate 10, and is an ohmic electrode in ohmic contact with the substrate 10.
Next, with reference to
Hereinafter, in growth of each layer, as organometal raw materials including Ga, Al, and In, trimethylgallium (TMG), trimethyl ammonium (TMA), and trimethylindium (TMI) are respectively used, for example. As a nitrogen raw material, ammonia (NH3) is used. As a lithography method, a photolithography method using a short wavelength light source, an electron beam lithography method in which rendering is directly performed by an electron beam, a nanoimprint method, or the like can be used. As an etching method, for example, dry etching by reactive ion etching (RIE) using a fluorine-based gas such as CF4, or wet etching using hydrofluoric acid (HF) or the like diluted to about 1:10, can be used.
As shown in
Specifically, on the substrate 10 having a thickness of 400 μm, an n-side clad layer of an n-type AlGaN is grown by 3 μm as the first semiconductor layer 20. Subsequently, the n-side light guide layer 31 of an n-type GaN is grown by 0.2 μm. Subsequently, the active layer 32 composed of two cycles of a barrier layer of InGaN and an InGaN quantum well layer is grown. Subsequently, the p-side light guide layer 33 of a p-type GaN is grown by 0.1 μm. Subsequently, the electron barrier layer 41 of AlGaN is grown by 10 nm. Subsequently, the p-side clad layer 42 is grown as a 0.66 μm-thick strained superlattice, by repeating 220 cycles of a 1.5 nm-thick p-type AlGaN layer and a 1.5 nm-thick p-type GaN layer. Subsequently, the p-side contact layer 43 of a p-type GaN is grown by 0.05 μm.
Next, as shown in
Next, as shown in
Next, as shown in
Specifically, the ridge part 40a is formed below the first protection film 91 positioned at the center in the X-axis direction. The ridge part 40a is composed of a projection of the p-side clad layer 42 projecting in the Z-axis positive direction, and the p-side contact layer 43 on this projection. The p-side contact layer 43 and the p-side clad layer 42 in the region where the first protection film 91 is not formed are etched, whereby the flat part 40c is formed. For etching of the p-side contact layer 43 and the p-side clad layer 42, dry etching by an RIE method using a chlorine-based gas such as Cl2 may be used.
The height of the ridge part 40a in the Z-axis direction is not limited in particular, but as an example, is not less than 100 nm and not greater than 1 μm. In order to cause the semiconductor laser element 1 to operate at a high light output (e.g., watt class), the height of the ridge part 40a may be set to not less than 300 nm and not greater than 800 nm. In the present embodiment, the height of the ridge part 40a is 650 nm.
The ridge part 40a is formed using, as a mask, the first protection film 91 formed in the predetermined shape. Therefore, as shown in the top view in
Next, as shown in
Next, as shown in
Next, a second protection film 92 composed of a photoresist is formed on the dielectric layer 60 shown in
Next, as shown in
Next, as shown in
Next, as shown in
Next, as shown in
Next, as shown in
In the present embodiment, the condition of etching on the substrate 10 and the first semiconductor layer 20 is adjusted, whereby the composition ratio (Ga/N) of Ga to N at the surface of the groove part 70 is set to be higher than the composition ratio (Ga/N) of Ga to N inside the first semiconductor layer 20. For example, in a case of dry etching using Cl2 gas, when the etching condition is controlled such that physical etching becomes dominant, elimination of N atoms is promoted, and a state where the number of Ga atoms is relatively large can be created on the etching surface (the surface of the groove part 70). Normally, in GaN, the composition ratio (Ga/N) is a value close to 1. However, when the etching condition is controlled, the composition ratio (Ga/N) at the etching surface can be made not less than 1.5. When oxygen is added to the etching gas, oxidation at the etching surface is promoted, and the composition ratio (Ga/N) can be increased.
Next, as shown in
Next, as shown in
Next, the semiconductor laser element having been subjected to the production steps up to
Subsequently, the semiconductor light-emitting element having been subjected to primary cleavage is cleaved (secondary cleavage) such that the pitch in terms of the length in the X-axis direction is 400 μm, for example. Accordingly, the semiconductor laser element 1 shown in
The semiconductor laser device 2 includes the semiconductor laser element 1 and a submount 100, and is used in processing of a product, for example. The submount 100 has a base 101, a first electrode 102a, a second electrode 102b, a first adhesion layer 103a, and a second adhesion layer 103b.
The base 101 is disposed on the Z-axis positive side of the substrate 10 of the semiconductor laser element 1, and functions as a heat sink. The material of the base 101 is not limited in particular, and the base 101 may be formed of a material that has a thermal conductivity equivalent to or greater than that of the semiconductor laser element 1, such as: a ceramic such as aluminum nitride (AlN) or silicon carbide (SiC); diamond (C) formed by CVD; a metal elemental substance such as Cu or Al; or an alloy such as CuW.
The first electrode 102a is disposed at the face on the Z-axis negative side of the base 101, and the second electrode 102b is disposed at the face on the Z-axis positive side of the base 101. The first electrode 102a and the second electrode 102b are each a lamination film composed of three metal films of a 0.1 μm-thick Ti film, a 0.2 μm-thick Pt film, and a 0.2 μm-thick Au film, for example.
The first adhesion layer 103a is disposed at the face on the Z-axis negative side of the first electrode 102a, and the second adhesion layer 103b is disposed at the face on the Z-axis positive side of the second electrode 102b. The first adhesion layer 103a and the second adhesion layer 103b are each a eutectic solder composed of a gold-tin alloy containing Au and Sn at contents of 70% and 30%, respectively, for example.
The semiconductor laser element 1 is mounted on the submount 100 such that the p side (the electrode member 50 side) of the semiconductor laser element 1 is connected to the submount 100. That is, the mounting form in
A wire 110 is connected by wire bonding to each of the n-side electrode 80 of the semiconductor laser element 1 and the first electrode 102a of the submount 100. Accordingly, a voltage can be applied to the semiconductor laser element 1 through the wires 110.
The semiconductor laser device 2 shown in
Next, with reference to
The width (hereinafter, simply referred to as “width”) in the X-axis direction of the ridge part 40a continuously and cyclically changes in accordance with the position in the Y-axis direction (the waveguiding direction), and a position having a large width and a portion having a small width are alternately disposed in the Y-axis direction.
Here, the local maximum value of the width of the ridge part 40a is defined as Wa, and the local minimum value of the width of the ridge part 40a is defined as Wb. The distance in the Y-axis direction from the position where the width of the ridge part 40a has the local maximum value Wa to the position adjacent thereto on the Y-axis positive side out of the positions where the width of the ridge part 40a has the local minimum value Wb, is defined as La. The distance in the Y-axis direction from the position where the width of the ridge part 40a has the local maximum value Wa to the position adjacent thereto on the Y-axis negative side out of the positions where the width of the ridge part 40a has the local minimum value Wb, is defined as Lb. The side face 40b extending from the position where the width of the ridge part 40a has the local maximum value Wa to the position where the width of the ridge part 40a has the local minimum value Wb has a linear shape in a top view. The angle between the Y-axis direction and the side face 40b extending from the position where the width of the ridge part 40a has the local maximum value Wa toward the Y-axis positive side is defined as θa. The angle between the Y-axis direction and the side face 40b extending from the position where the width of the ridge part 40a has the local maximum value Wa toward the Y-axis negative side is defined as θb.
The relationship between θa, θb, Wa, Wb, La, and Lb is represented by formulae (1), (2) below.
θa=arctan{(Wa−Wb)/(2×La)} (1)
θb=arctan{(Wa−Wb)/(2×Lb)} (2)
In the present embodiment, the angles θa, θb are each set to be larger than a limit angle θc. The limit angle θc is the maximum value of the angle at which laser light is totally reflected at the side face 40b of the ridge part 40a. That is, the angle θa, θb is set so as to satisfy formula (3) below.
θa>θc and θb>θc (3)
When the angle θa, θb is set to be larger than the limit angle θc, light in the higher order mode can be reduced and the proportion of light in the fundamental mode can be increased, as described later with reference to
Next, a setting example of Wa, Wb, La, Lb, θa, and θb will be described.
For example, the width of the ridge part 40a is not less than 1 μm and not greater than 100 μm. In order to cause the semiconductor laser element 1 to operate at a high light output (e.g., watt class), the local maximum value Wa of the width of the ridge part 40a may be set to not less than 10 μm and not greater than 50 μm. The smaller the local minimum value Wb of the width of the ridge part 40a is, the more the higher order mode component can be reduced. However, when the local minimum value Wb is too small, the fundamental mode component (fundamental transverse mode component) is also lost and reduced. Meanwhile, when the local minimum value Wb of the width of the ridge part 40a is made large, the higher order mode component reduction effect is reduced. In order to efficiently suppress the higher order mode component while maintaining the intensity according to the fundamental mode, the local minimum value Wb of the width of the ridge part 40a may be set to about not less than ¼ and not greater than ¾ of the local maximum value Wa of the width.
When the distance La, Lb is decreased, the angle θa, θb is increased, and thus, formula (3) above is easily satisfied. Meanwhile, when the distance La, Lb is increased too much, the number of the portions where the width of the ridge part 40a is small is reduced in the range of the length in the Y-axis direction of the semiconductor laser element 1. Thus, the higher order mode suppression effect is reduced. In the present embodiment, Wa=16 μm, Wb=10 μm, and La=Lb=30 μm are set. At this time, θa=θb=5.7° is realized.
As long as the conditions of formulae (1), (2) above are satisfied, La*Lb may be allowed. In a case of La≠Lb, while light goes to and fro in the Y-axis direction in the resonator, loss on the higher order mode can be made different between the forward path and the backward path. For example, in a case of La>Lb, loss on the higher order mode when light advances from the end face 1b to the end face 1a can be increased.
As described above, the groove part 70 is disposed on the outer side of the side face 40b of the ridge part 40a. Here, when the ridge part 40a and the groove part 70 are separated from each other by a certain distance Dd in the width direction (the X-axis direction) of the ridge part 40a, formula (4) below needs to be satisfied in order for the groove part 70 to give an effect on light propagating on the outer side of the ridge part 40a.
Wb+2×Dd<Wa (4)
Here, when the distance Dd is too small, the proportion under influence of the groove part 70 in the fundamental mode component increases, whereby the loss in the fundamental mode increases. Therefore, the distance Dd needs to be large to some extent. As a result of studies conducted by the inventors, it was found that, when the distance Dd is not less than 1 μm, loss in the fundamental mode component can be suppressed. In the X-axis direction, the end, on the opposite side to the ridge part 40a, of the groove part 70 may be at the same position as or on the outer side of that of the side face 40b of the ridge part 40a where the width has the local maximum value Wa. In the present embodiment, Dd=2 μm is set, and in the X-axis direction, the end, on the opposite side to the ridge part 40a, of the groove part 70 is at the same position as that of the side face 40b of the ridge part 40a where the width has the local maximum value Wa.
Next, how to obtain the limit angle θc will be described.
In the method below, using an equivalent refractive index method, a three-dimensional structure of the ridge part 40a is approximated by a two-dimensional slab waveguide structure. At the center position in the X-axis direction of the ridge part 40a, an equivalent refractive index ni at this position is calculated by using the thickness and the refractive index of each layer. Similarly, at the center position in the X-axis direction of the groove part 70, an equivalent refractive index no at this position is calculated by using the thickness and the refractive index of each layer. The equivalent refractive index ni is the effective refractive index on the inner side of the ridge part 40a, and the equivalent refractive index no is the effective refractive index on the outer side of the ridge part 40a. In the present embodiment, due to formation of the ridge part 40a, ni>no is always satisfied.
Next, using Snell's law, the maximum value of the angle when a total reflection condition is satisfied, i.e., the limit angle θc, is calculated. The limit angle θc is calculated by formula (5) below.
θc=90°−arcsin(no/ni) (5)
For example, when ni=2.535 and no=2.527, 9c=4.6° is calculated based on formula (5) above. Using θc calculated in this manner, Wa, Wb, La, and Lb are set so as to satisfy formulae (1) to (3) above.
Next, an example of the procedure of actually determining each set value will be described.
As described above, when the equivalent refractive index ni, no is calculated by using the thickness and the refractive index of each layer, the limit angle θc can be calculated based on formula (5) above or the graph in
In a region below each straight line in
In this manner, the limit angle θc is calculated based on the equivalent refractive indexes ni and no on the inside and the outside of the ridge part 40a, and the local maximum value Wa, the local minimum value Wb, and the distance La, Lb can be set based on the calculated θc. Accordingly, formula (3) above is satisfied, and thus, light in the higher order mode can be reduced.
Next, with reference to Comparative Example 1 shown in
In Comparative Example 1, when compared with the embodiment above, the groove part 70 is omitted. In the semiconductor laser element of Comparative Example 1, during laser oscillation, light propagates in the Y-axis direction in the ridge part 40a. At this time, the total reflection condition is not satisfied on the inside and the outside of the ridge part 40a (since the formula (3) above is satisfied), and thus, light generally propagates in the Y-axis direction even if there is a portion where the width of the ridge part 40a is small. In
Here, light propagating at the ridge part 40a includes light in the fundamental mode and the higher order mode shown in the graphs in the lower part of
As shown in
However, as shown in
In Comparative Example 2, when compared with the embodiment above, the groove part 70 is omitted, and, instead of the ridge part 40a, a ridge part 200 is formed in an upper portion of the second semiconductor layer 40. In Comparative Example 2, the total reflection condition is satisfied on the inside and the outside of the ridge part 200. That is, in Comparative Example 2, instead of formula (3) above, θa<θc and θb<θc are satisfied.
In Comparative Example 2, since formula (3) above is not satisfied, light in the higher order mode cannot be reduced in the form as in Comparative Example 1. However, in Comparative Example 2, ripples in the vertical FFP caused in the case of Comparative Example 1 can be suppressed.
In the semiconductor laser element of Comparative Example 2, the refractive index difference between the inside and the outside of the ridge part 200 satisfies the total reflection condition. Thus, as indicated by broken line arrows in
With reference to
As shown in the graphs on the left side of the broken line, it is understood that, in the semiconductor laser element (Comparative Example 1) satisfying θa>θc and θb>θc, ripples (disturbance) were caused in the vertical FFP. Meanwhile, as shown in the graphs on the right side of the broken line, it is understood that, in the semiconductor laser element (Comparative Example 2) satisfying θa<θc and θb<θc, ripples are not caused in the vertical FFP. In addition, it is understood that the smaller the local minimum value Wb of the width is, the greater the intensity of ripples becomes. This is because the smaller the local minimum value Wb of the width is, the greater the proportion of light passing through the outer side of the ridge part becomes. In the graphs on the left side of the broken line, it is understood that ripples become smaller in a structure closer to the structure satisfying the relationship of ea<ec and eb<ec. This is because the proportion of light satisfying the condition of ea<ec and eb<ec, i.e., the total reflection condition, increases.
As described above, in the semiconductor laser element of Comparative Example 1 satisfying the relationship of formula (3) above, ripples are caused in the vertical FFP. Meanwhile, in the semiconductor laser element of Comparative Example 2 not satisfying the relationship of formula (3) above, ripples are less likely to be caused in the vertical FFP, but it is difficult to reduce light in the higher order mode, as described with reference to
With reference to
In the embodiment, similar to Comparative Example 1 above, light generally propagates in the Y-axis direction as indicated by broken line arrows. At this time, light propagating at the ridge part 40a includes light in the fundamental mode and the higher order mode shown in the graphs in the lower part of
As shown in
As shown in
Here, the groove part 70 is filled with air as described above, and thus has a refractive index lower than that of the first semiconductor layer 20. Thus, when the groove part 70 having a low refractive index is formed below (on the first semiconductor layer 20 side with respect to the active layer 32) in a light passage region, downward movement of light is restricted. That is, downward movement of light having propagated on the outer side of the ridge part 40a and reached directly above the groove part 70 is suppressed. Therefore, as shown in
According to the embodiment, the following effects are achieved.
Since the angle θa, θb between the side face 40b of the ridge part 40a and the waveguiding direction (the Y-axis direction) is set to be larger than the limit angle θc, laser light in the higher order mode is cut, and the proportion of laser light in the fundamental mode is increased. The groove part 70 is formed at least at the substrate 10 and the first semiconductor layer 20, and is disposed on the outer side of the side face 40b at least where the width of the ridge part 40a is small. Accordingly, as described with reference to
The groove part 70 is formed in the substrate 10 and the first semiconductor layer 20. Accordingly, while the distribution position of laser light propagating at the ridge part 40a (the waveguide WG) is kept at the light emission layer 30, downward movement of the distribution position of laser light can be effectively suppressed.
In a top view, the groove part 70 is disposed along the side face 40b, on the outer side of the side face 40b of the ridge part 40a. Specifically, the groove part 70 is disposed in parallel so as to be separated by the distance Dd (see
The composition ratio (Ga/N) of Ga to N at the surface of the groove part 70 in the first semiconductor layer 20 is higher than the composition ratio (Ga/N) of Ga to N inside the first semiconductor layer 20. When the Ga ratio of the groove part 70 is increased in this manner, the light absorption effect is increased. Accordingly, unnecessary laser light in the higher order mode present in the vicinity of the groove part 70 can be absorbed, whereby the higher order mode component can be reduced.
As shown in
The angle θa, θb between the side face 40b of the ridge part 40a and the waveguiding direction (the Y-axis direction) is set to be larger than the limit angle θc. In this case, the limit angle θc is the maximum value of the angle at which laser light is totally reflected at the side face 40b. Then, with the side face 40b of the ridge part 40a, the higher order mode component propagating at the ridge part 40a can be reduced, and the proportion of the fundamental mode can be increased.
<Modifications>
Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various other modifications may be made.
For example, in the embodiment above, the inside of the groove part 70 is composed of air. However, not limited thereto, as a low refractive index part having a refractive index lower than that of the first semiconductor layer 20, a dielectric layer implemented by a silicon oxide film (SiO2) may be formed inside the groove part 70, for example. Alternatively, a gap may be included between a dielectric layer and the first semiconductor layer 20. For example, inside the groove part 70, a dielectric 71 may be disposed as shown in Modifications 1 to 3 below.
In Modification 1 shown in
In Modifications 1 and 2, a gap 72 is disposed between the first semiconductor layer 20 and the dielectric 71, and the lower face (the face on the Z-axis negative side) of the dielectric 71 is at an upper position relative to the upper face of the substrate 10. In Modification 1, the gap 72 is disposed between the left and right ends of the dielectric 71, and the side face of the groove part 70. In Modification 2, the dielectric 71 covers the bottom 70a, and the gap 72 is disposed at the boundary (corner portion) between the bottom 70a and the side face of the groove part 70. In Modification 3, the lower face (the face on the Z-axis negative side) of the dielectric 71 is positioned between the upper face and the lower face of the substrate 10.
When the dielectric 71 is to be formed inside the groove part 70, the dielectric 71 is formed at the entire face on the Z-axis negative side of the substrate 10, in a state shown in
When the dielectric 71 is disposed in the groove part 70 as in Modifications 1 to 3, the refractive index in the vicinity of the groove part 70 gently changes, and thus, scattering of light in the fundamental mode due to sharp change in the refractive index can be suppressed. Accordingly, the ratio of the fundamental mode can be relatively increased. When the gap 72 is disposed as in Modifications 1 and 2, stress caused by a difference in the thermal expansion coefficient between the first semiconductor layer 20 and the dielectric 71 can be relaxed. Thus, stable laser operation can be realized even at a high temperature. In Modification 2, it is possible to prevent entry of a foreign matter from outside into the corner portion of the groove part 70 serving as a passage for laser light, and thus, variation in the semiconductor laser element 1 can be suppressed. In Modification 3, since the dielectric 71 is embedded up to the substrate 10, strength of the semiconductor laser element 1 can be increased. Accordingly, breakage of the semiconductor laser element 1 due to a load at the time of mounting can be suppressed. Thus, reliability of the semiconductor laser element 1 can be increased.
In Modifications 1 to 3 above, the dielectric 71 is implemented by a silicon oxide film (SiO2), but not limited thereto, a material having a refractive index lower than that of the first semiconductor layer 20 may be used. In this case as well, similar to Modifications 1 to 3 above, due to the dielectric 71, the refractive index in the vicinity of the groove part 70 can be set to be gently changed, and due to the groove part 70, occurrence of ripples in the vertical FFP can be suppressed. Examples of the material of the dielectric 71 include SiN (refractive index: 2.07), Al2O3 (refractive index: 1.79), AlN (refractive index: 2.19), and ITO (refractive index: 2.12). When the dielectric 71 is formed of ITO, light in the higher order mode can be more suppressed.
The dielectric 71 may be formed of a material (e.g., carbon or amorphous silicon) that absorbs light from the light emission layer 30. When the dielectric 71 is formed of a material that absorbs light from the light emission layer 30, laser light in the higher order mode is cut, and thus, the proportion of laser light in the fundamental mode can be increased.
In the embodiment above, as shown in
In Modification 4 shown in
In the embodiment above, as shown in
In Modification 5 shown in
In the embodiment above, the side face 40b of the ridge part 40a has a linear shape in a top view. However, as long as the condition of formula (3) above is satisfied, the side face 40b may have a curved shape in a top view.
In the embodiment above, the cross section of the groove part 70 has a rectangular shape, but not limited thereto, may have a trapezoid shape, a triangular shape, an elliptical shape, or the like.
In the embodiment above, the groove part 70 is formed in the substrate 10 and the first semiconductor layer 20, but not limited thereto, may be formed so as to extend across the n-side light guide layer 31, the first semiconductor layer 20, and the substrate 10. That is, the groove part 70 may be formed from the lower face of the substrate 10 to the n-side light guide layer 31, to be provided in communication with the substrate 10, the first semiconductor layer 20, and the n-side light guide layer 31.
In the embodiment above, the semiconductor laser element 1 and the semiconductor laser device 2 need not necessarily be used in processing of a product, and may be used in other usage.
In addition to the above, various modifications can be made as appropriate to the embodiment of the present invention, without departing from the scope of the technological idea defined by the claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-019608 | Feb 2021 | JP | national |
This application is a continuation of International Application No. PCT/JP2022/000955 filed on Jan. 13, 2022, entitled “SEMICONDUCTOR LASER ELEMENT”, which claims priority under 35 U.S.C. Section 119 of Japanese Patent Application No. 2021-019608 filed on Feb. 10, 2021, entitled “SEMICONDUCTOR LASER ELEMENT”. The disclosures of the above applications are incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2022/000955 | Jan 2022 | US |
| Child | 18232266 | US |
