Number | Name | Date | Kind |
---|---|---|---|
4371967 | Wada et al. | Feb 1983 | |
5018157 | Deppe et al. | May 1991 | |
5208820 | Kurihara | May 1993 | |
5351257 | Lebby et al. | Sep 1994 | |
5513202 | Kobayashi et al. | Apr 1996 | |
5547898 | Grodzinski et al. | Aug 1996 | |
5557627 | Schneider, Jr. et al. | Sep 1996 | |
5568499 | Lear | Oct 1996 | |
5724376 | Kish, Jr. | Mar 1998 | |
5949807 | Fujimoto et al. | Sep 1999 |
Number | Date | Country |
---|---|---|
0495301A1 | Jul 1992 | EP |
2333895A | Aug 1999 | GB |
56-088388 | Jul 1981 | JP |
09-097945 | Apr 1997 | JP |
09-260770 | Oct 1997 | JP |
Entry |
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“Low Series Resistance High-Efficiency GaAs/AIGaAs Vertical-Cavity Surface-Emitting Lasers with Continuously Graded Mirrors Grown by MOCVD”; by P. Zhou, Julian Cheng, C.F. Schaus, S. Z.. Sun, K. Zheng, E.. Armour, C. Hains, Wei Hsin, D. R. Myers, and G. A. Vawter; by IEEE Photonics Technology Letters, vol. 3., No. 7., Jul. 1991, (pp. 591-593). |
“Low Threshold Voltage Vertical Cavity Surface-Emitting Laser”; by K. L.. Lear, S. A. Chalmers and K. P. Killeen; by Electronics Letters, Apr. 1, 1993, vol. 29, No. 7, (pp. 584-586). |