Claims
- 1. In a laser comprising a body of semiconductor material, said body including a substrate having a pair of channels in a first major surface thereof with a mesa therebetween, a first confinement layer overlying the first major surface, the mesa and partially filling the channels; a light propagation region, comprising an active layer, overlying the first confinement layer; and a second confinement layer overlying the light propagation region:
- the improvement which comprises the first major surface of the substrate being misoriented from a member of the {100} family of crystallographic planes by a tilt angle between about 0.2.degree. and 1.5.degree. with a misorientation angle of between about 5.degree. and 45.degree..
- 2. The laser of claim 1 wherein the tilt angle is between about 0.3.degree. and 0.7.degree. and the misorientation angle is between about 5.degree. and 25.degree..
- 3. The laser of claim 2 wherein the tilt angle is about 0.5.degree. and the misorientation angle is about 20.degree..
- 4. The laser of claim 1 wherein the tilt angle is between about 0.8.degree. and 1.2.degree. and the misorientation angle is between about 25.degree. and 45.degree..
- 5. The laser of claim 4 wherein the tilt angle is about 1.degree. and the misorientation angle is about 35.degree..
- 6. The laser of claim 1 wherein the light propagation region further comprises a guide layer adjacent to the active layer.
- 7. The laser of claim 6 wherein the guide layer overlies the first confinement layer and the active layer overlies the guide layer.
Government Interests
The United States Government has rights in this invention pursuant to a Government Contract.
US Referenced Citations (4)