Claims
- 1. A photoelectric device comprising a signal electrode, and N-type semiconductor layer disposed adjacent said signal electrode, said semiconductor layer having a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band and being made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide, and an amorphous photoconductor layer containing 50 atomic % or more of selenium disposed adjacent said N-type semiconductor layer.
- 2. A photoelectric device according to claim 1, wherein the thickness of said N-type semiconductor layer is 12 nm to 150 nm.
- 3. A photoelectric device according to claim 1, further comprising a light-transmitting substrate, on which said signal electrode is disposed, the surface of said substrate, which is opposite to said signal electrode, constituting a light receiving surface.
- 4. A photoelectric device comprising a signal electrode, an N-type semiconductor layer disposed adjacent said signal electrode, said semiconductor layer having a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band and being made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide, and an amorphous photoconductor layer containing 50 atomic % or more of selenium disposed adjacent said N-type semiconductor layer, and further comprising another electrode adjacent said amorphous photoconductor layer, said amorphous layer being sandwiched between said N-type semiconductor layer and said another electrode, and wherein an incident light ray is adapted to fall on said signal electrode.
- 5. A photoelectric device according to claim 1, wherein the N-type semiconductor layer has a width of the forbidden band of at least 2 eV, and an energy difference between the Fermi level and the top of the valence band of at least 1 eV.
Priority Claims (1)
Number |
Date |
Country |
Kind |
50-119633 |
Oct 1975 |
JPX |
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CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation-in-part application of U.S. Ser. No. 727,691, filed on Sept. 28, 1976.
US Referenced Citations (4)
Foreign Referenced Citations (1)
Number |
Date |
Country |
44-24223 |
Jan 1969 |
JPX |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
727691 |
Sep 1976 |
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