Patent Application
20230327062
The present disclosure relates to a semiconductor light-emitting device, particularly, a semiconductor light-emitting device having a size of several to several tens of µm and a display device using the same.
In recent years, in the field of display technology, liquid-crystal displays (LCDs), organic light-emitting diodes (OLED) displays, semiconductor light-emitting displays, etc. have been competing to realize large-area displays.
Semiconductor light-emitting devices (elements, diodes) (hereinafter, microLEDs) with a cross-sectional area of 100 µm or less, when used in displays, can offer very high efficiency because the displays do not need a polarizer to absorb light. However, in order to implement large-scale displays, several millions of semiconductor light-emitting devices (elements) are required, which makes it difficult to transfer the semiconductor light-emitting devices, compared to other technologies.
In recent years, microLEDs can be transferred by pick & place, laser lift-off or self-assembly. Among others, the self-assembly approach is a method that allows semiconductor light-emitting devices to find their positions on their own in a fluid, which is most advantageous in realizing large-screen display devices.
Self-assembly methods can include a method of directly assembling semiconductor light-emitting devices on a final substrate to be used in a product, and a method of assembling semiconductor light-emitting devices on an assembly substrate and transferring the semiconductor light-emitting devices to a final substrate through an additional transfer process. The direct transfer method is efficient in terms of process, and the hybrid-transfer method is advantageous in terms of additionally using a structure for self-assembly without limitation. Therefore, the two methods are selectively used.
One aspect of the present disclosure is to provide a semiconductor light-emitting device (element) having a structure capable of improving a self-assembly yield, and a display device having the semiconductor light-emitting devices.
Another aspect of the present disclosure is to provide a display device with improved light extraction efficiency.
A semiconductor light-emitting device according to the present disclosure can include a first conductive electrode, a first conductive semiconductor layer having one surface with the first conductive electrode, and another surface with an undoped semiconductor layer, an active layer disposed on the one surface of the first conductive semiconductor layer, a second conductive semiconductor layer disposed on the active layer, and a second conductive electrode disposed on the second conductive semiconductor layer. The semiconductor light-emitting device can include a light-transmitting layer disposed on a surface where the first conductive semiconductor layer is disposed with respect to the undoped semiconductor layer, and formed of a material having electrical conductivity.
According to the present disclosure, the light-transmitting layer can have at least one surface with surface roughness.
According to the present disclosure, the light-transmitting layer can be a transparent electrode layer.
According to the present disclosure, the light-transmitting layer can have a thickness of 30 nm to 500 nm.
According to the present disclosure, the light-transmitting layer can be a semiconductor layer doped with an n-type dopant.
According to the present disclosure, the light-transmitting layer can have electrical conductivity that is equal to or higher than that of the first conductive semiconductor layer.
According to the present disclosure, the light-transmitting layer can have a thickness of 50 nm to 200 nm.
A display device according to the present disclosure can include a base, semiconductor light-emitting devices disposed on the base and each including conductive electrodes, wiring electrodes disposed on the base and electrically connected to the conductive electrodes of the semiconductor light-emitting devices. Each of the semiconductor light-emitting devices can include a first conductive electrode, a first conductive semiconductor layer having one surface with the first conductive electrode, and another surface with an undoped semiconductor layer, an active layer disposed on the one surface of the first conductive semiconductor layer, a second conductive semiconductor layer disposed on the active layer, and a second conductive electrode disposed on the second conductive semiconductor layer. The semiconductor light-emitting device can include a light-transmitting layer disposed on a surface where the first conductive semiconductor layer is disposed with respect to the undoped semiconductor layer, and formed of a material having electrical conductivity.
According to the present disclosure, the semiconductor light-emitting device can be disposed such that the light-transmitting layer faces the base.
According to the present disclosure, the base portion can further include a reflective layer disposed at least at a position corresponding to a position where the semiconductor light-emitting device is disposed.
According to the present disclosure, the display device can further include a connection electrode extending from the first conductive electrode and the second conductive electrode of the semiconductor light-emitting device to the wire electrode, and the connection electrode can be made of a transparent material.
According to the present disclosure, the base can be made of a light-transmitting material.
According to the present disclosure, the light-transmitting layer can have at least one surface with surface roughness.
According to the present disclosure, the light-transmitting layer can be a transparent electrode layer.
According to the present disclosure, the light-transmitting layer can be a semiconductor layer doped with an n-type dopant.
Dielectrophoretic force of a semiconductor light-emitting device according to the present disclosure can be increased during self-assembly, and thus an assembly rate of the semiconductor light-emitting device can be improved. In addition, according to the present disclosure, since the dielectrophoretic force of the semiconductor light-emitting device is increased by use of a light-transmitting layer, and light extraction efficiency of a display device using the semiconductor light-emitting device can be improved.
Description will now be given in detail according to exemplary implementations disclosed herein, with reference to the accompanying drawings. For the sake of brief description with reference to the drawings, the same or equivalent components can be provided with the same or similar reference numbers, and description thereof will not be repeated. In general, a suffix such as “module” and “unit” can be used to refer to elements or components. Use of such a suffix herein is merely intended to facilitate description of the specification, and the suffix itself is not intended to give any special meaning or function. In describing the present disclosure, if a detailed explanation for a related known function or construction is considered to unnecessarily divert the gist of the present disclosure, such explanation has been omitted but would be understood by those skilled in the art. The accompanying drawings are used to help easily understand the technical idea of the present disclosure and it should be understood that the idea of the present disclosure is not limited by the accompanying drawings. Furthermore, it will be understood that when an element such as a layer, region or substrate is referred to as being “on” another element, it can be directly on the another element or an intermediate element can also be interposed therebetween.
A display device disclosed herein can include a portable (mobile) phone, a smart phone, a laptop computer, a digital broadcast terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation, a slate PC, a tablet PC, an ultrabook, a digital TV, a desktop computer, and the like. However, the configuration according to the implementation described herein can be applied as long as it can include a display even in a new product form to be developed later.
As illustrated, information processed by a controller of a display device 100 can be output on a display module 140. A closed loop-shaped case 101 that runs around the rim of the display module 140 can define the bezel of the display device 100.
The display module 140 can include a panel 141 that displays an image, and the panel 141 can include micro-sized semiconductor light-emitting devices (or elements) 150 and a wiring substrate 110 where the semiconductor light-emitting devices 150 are mounted.
The wiring substrate 110 can be provided with wirings, which can be connected to n-type electrodes 152 and p-type electrodes 156 of the semiconductor light-emitting devices 150. As such, the semiconductor light-emitting devices 150 can be provided on the wiring substrate 110 as individual pixels that emit light on their own.
The image displayed on the panel 141 can be visual information, which is rendered by controlling the light emission of unit pixels arranged in a matrix configuration independently through the wirings.
The present disclosure takes microLEDs (light-emitting devices) as an example of the semiconductor light-emitting devices 150 which convert current into light. The microLEDs can be light-emitting devices that are small in size less than 100 µm. The semiconductor light-emitting devices 150 can have light-emitting regions of red, green, and blue, and unit pixels can be produced by combinations of these colors. For example, the unit pixels are the smallest units for producing one color. Each unit pixel can contain at least three microLEDs.
More specifically, referring to
For example, the semiconductor light-emitting devices 150 can be implemented as high-power light-emitting devices that are composed mostly of gallium nitride (GaN), with some indium (In) and/or aluminum (Al) added to it, and emit light of various colors.
Such a vertical semiconductor light-emitting device can include a p-type electrode 156, a p-type semiconductor layer 155 disposed on the p-type semiconductor layer 156, an active layer 154 disposed on the p-type semiconductor layer 155, an n-type semiconductor layer 153 disposed on the active layer 154, and an n-type electrode 152 disposed on the n-type semiconductor layer 153. In this case, the p-type electrode 156 at the bottom can be electrically connected to a p-electrode 111 of the wiring substrate, and the upper n-type electrode 152 at the top can be electrically connected to an n-electrode 112 above the semiconductor light-emitting device. The electrodes can be disposed in an upward/downward direction in the vertical semiconductor light-emitting device 150, thereby providing a great advantage of reducing a chip size.
In another example, referring to
As an example of such a flip chip-type light-emitting device, the semiconductor light-emitting device 250 can include a p-type electrode 256, a p-type semiconductor layer 255 disposed on the p-type layer 256, an active layer 254 disposed on the p-type semiconductor layer 255, an n-type semiconductor layer 253 disposed on the active layer 254, and an n-type electrode 252 vertically separated from the p-type electrode 256 on the n-type semiconductor layer 253. In this case, both the p-type electrode 256 and the n-type electrode 252 can be electrically connected to a p electrode and an n electrode of the wiring substrate, below the semiconductor light-emitting device.
The vertical semiconductor light-emitting device and a flip-type light-emitting device each can be used as a green semiconductor light-emitting device, blue semiconductor light-emitting device, or red semiconductor light-emitting device. The green semiconductor light-emitting device and the blue semiconductor light-emitting device can be implemented as high-power light-emitting devices that are composed mostly of gallium nitride (GaN), with some indium (In) and/or aluminum (Al) added to it, and emit green and blue light, respectively. As an example, the semiconductor light-emitting devices can be made of gallium nitride thin films which include various layers of n-Gan, p-GaN, AlGaN, InGaN, etc. More specifically, the p-type semiconductor layer can be P-type GaN, and the n-type semiconductor layer can be N-type GaN. However, for the red semiconductor light-emitting device, the p-type semiconductor layer can be P-type GaAs, and the n-type semiconductor layer can be N-type GaAs.
Moreover, the p-type semiconductor layer can be P-type GaN doped with Mg on the p electrode, and the n-type semiconductor layer can be N-type GaN doped with Si on the n electrode. In this case, the above-described semiconductor light-emitting devices can be semiconductor light-emitting devices without the active layer.
In some examples, referring to
In the display device using the semiconductor light-emitting devices, semiconductor light-emitting devices can be grown on a wafer, formed through mesa and isolation, and used as individual pixels. The micro-sized semiconductor light-emitting devices 150 should be transferred onto preset positions on a substrate of the display panel. One of the transfer technologies available can be pick and place, but it has a low success rate and requires a lot of time. In another example, a number of diodes can be transferred at a time by using a stamp or roll, which, however, is not suitable for large-screen displays because of limited yields. The present disclosure proposes a new method and device for manufacturing a display device that can solve these problems.
To this end, a new method for manufacturing a display device will be described first below.
In this specification, a display device using passive matrix (PM) semiconductor light-emitting devices will be illustrated. It should be noted that the illustration given below is also applied to active matrix (AM) semiconductor light-emitting devices. In addition, the self-assembly method described in this specification can be applied to both horizontal semiconductor light-emitting devices and vertical semiconductor light-emitting devices.
First of all, according to the manufacturing method of the display device, a first conductive (type) semiconductor layer 153, an active layer 154, and a second conductive (type) semiconductor layer 155 are grown on a growth substrate 159 (
Once the first conductive semiconductor layer 153 is grown, the active layer 154 can be grown on the first conductive semiconductor layer 153 and then the second conductive semiconductor layer 155 can be grown on the active layer 154. By sequentially growing the first conductive semiconductor layer 153, the active layer 154, and the second conductive semiconductor layer 155, the first conductive semiconductor layer 153, the active layer 154, and the second conductive semiconductor layer 155 can form a stack structure as illustrated in
In this case, the first conductive semiconductor layer 153 can be a n-type semiconductor layer, and the second conductive semiconductor layer 155 can be a p-type semiconductor layer. However, the present disclosure is not necessarily limited to this, and the first conductive type can be p-type and the second conductive type can be n-type.
Moreover, although this exemplary implementation is illustrated by assuming the presence of the active layer, the active layer can be omitted, if necessary, as stated above. In an example, the p-type semiconductor layer can be P-type GaN doped with Mg, and the n-type semiconductor layer can be N-type GaN doped with Si on the n electrode.
The growth substrate 159 (wafer) can be formed of, but not limited to, light-transmissive material, for example, one of sapphire (Al2O3), GaN, ZnO, and AlO. Further, the growth substrate 159 can be made of a material suitable for growing semiconductor materials, namely, a carrier wafer. The growth substrate 2101 can also be formed of a material having high thermal conductivity. The growth substrate 2101 can use at least one of a SiC substrate having higher thermal conductivity than the sapphire (Al2O3) substrate, Si, GaAs, GaP, InP and Ga2O3, in addition to a conductive substrate or an insulating substrate.
Next, a plurality of semiconductor light-emitting devices can be formed by removing at least parts of the first conductive semiconductor layer 153, the active layer 154, and the second conductive semiconductor layer 155 (
More specifically, isolation can be performed so that the plurality of light-emitting devices form a light-emitting device array. For example, a plurality of semiconductor light-emitting devices can be formed by vertically etching the first conductive semiconductor layer 153, the active layer 154, and the second conductive semiconductor layer 155.
In the case of horizontal semiconductor light-emitting devices, a mesa process can be performed which exposes the first conductive semiconductor layer 153 to the outside by vertically removing part of the active layer 154 and the second conductive semiconductor layer 155, and then isolation can be performed which forms an array of semiconductor light-emitting devices by etching the first conductive semiconductor layer 153.
Next, a second conductive electrode 156 (or p-type electrode) can be formed on one surface of the second conductive semiconductor layer 155 (
Next, the growth substrate 159 can be removed, thus leaving a plurality of semiconductor light-emitting devices. For example, the growth substrate 159 can be removed using laser lift-off (LLO) or chemical lift-off (CLO) (
Afterwards, the step of mounting the semiconductor light-emitting devices 150 on a substrate in a chamber filled with a fluid can be performed (
For example, the semiconductor light-emitting devices 150 and the substrate 161 can be put into a chamber filled with a fluid, and the semiconductor light-emitting devices can be self-assembled onto the substrate 161 using fluidity, gravity, surface tension, etc. In this case, the substrate can be an assembly substrate 161.
In another example, a wiring substrate, instead of the assembly substrate 161, can be put into a fluid chamber, and the semiconductor light-emitting devices 150 can be mounted directly onto the wiring substrate. In this case, the substrate can be a wiring substrate. For convenience of explanation, the present disclosure is illustrated with an example in which the semiconductor light-emitting devices 150 are mounted onto the assembly substrate 161.
To facilitate the mounting of the semiconductor light-emitting devices 150 onto the assembly substrate 161, cells into which the semiconductor light-emitting devices 150 are fitted can be provided on the assembly substrate 161. Specifically, cells where the semiconductor light-emitting devices 150 are mounted can be disposed on the assembly substrate 161 at positions where the semiconductor light-emitting devices 150 are aligned with wiring electrodes. The semiconductor light-emitting devices 150 can be assembled to the cells as they move within the fluid.
After arraying the semiconductor light-emitting devices 150 on the assembly substrate 161, the semiconductor light-emitting devices 150 can be transferred to the wiring substrate from the assembly substrate 161, thereby enabling a large-area transfer across a large area. Thus, the assembly substrate 161 can be referred to as a temporary substrate.
Meanwhile, the above-explained self-assembly method requires a higher transfer yield so that it can be applied to the manufacture of large-screen displays. The present disclosure proposes a method and device that minimizes the effects of gravity or friction and avoids non-specific binding, in order to increase the transfer yield.
In this case, in the display device according to the present disclosure, a magnetic material can be placed on the semiconductor light-emitting devices so that the semiconductor light-emitting devices are moved by magnetic force, and the semiconductor light-emitting devices can be mounted at preset positions by an electric field in the process of being moved. This transfer method and device will be described in more detail below with reference to the accompanying drawings.
Referring to
The fluid chamber 162 can define a space for receiving a plurality of semiconductor light-emitting devices. The space can be filled with a fluid, and the fluid can be an assembly solution, which includes water or the like. Thus, the fluid chamber 162 can be a water tank and configured as an open-type. However, the present disclosure is not limited to this, and the fluid chamber 162 can be a closed-type chamber in which the space is in a closed state.
A substrate 161 can be placed in the fluid chamber 162 so that an assembly surface where the semiconductor light-emitting devices 150 are assembled faces downwards. For example, the substrate 161 can be fed to an assembly site by a feed unit (transfer unit), and the transfer unit can include a stage 165 where the substrate is mounted. The position of the stage 165 can be adjusted by the controller, whereby the substrate 161 can be fed to the assembly site.
In this instance, the assembly surface of the substrate 161 at the assembly site can face the bottom of the fluid chamber 162. As illustrated in the drawings, the assembly surface of the substrate 161 can be placed to be soaked with the fluid in the fluid chamber 162. Thus, the semiconductor light-emitting devices 150 in the fluid can be moved to the assembly surface.
The substrate 161 can be an assembly substrate where an electric field can be formed, and can include a base portion 161a, a dielectric layer 161b, and a plurality of electrodes 161c.
The base portion 161a can be made of an insulating material, and the plurality of electrodes 161c can be thin-film or thick-film bi-planar electrodes that are patterned on one surface of the base portion 161a. The electrodes 161c can be formed of a stack of Ti/Cu/Ti, Ag paste, ITO, etc.
The dielectric layer 161b can be made of an inorganic material such as SiO2, SiNx, SiON, Al2O3, TiO2, HfO2, etc. Alternatively, the dielectric layer 161b can be an organic insulator and configured as a single layer or multi-layers. The thickness of the dielectric layer 161b can range from several tens of nm to several µm.
Further, the substrate 161 according to the present disclosure includes a plurality of cells 161d that are separated by barrier walls. The cells 161d can be sequentially arranged in one direction and made of a polymer material. Furthermore, the barrier walls 161e defining the cells 161d can be made to be shared with neighboring cells 161d. The barrier walls 161e can protrude from the base portion 161a, and the cells 161d can be sequentially arranged in one direction by the barrier walls 161e. More specifically, the cells 161d can be sequentially arranged in column and row directions and have a matrix configuration.
As illustrated in the drawings, the cells 161d can have recesses for receiving the semiconductor light-emitting devices 150, and the recesses can be spaces defined by the barrier walls 161e. The recesses can have a shape identical or similar to the shape of the semiconductor light-emitting devices. For example, if the semiconductor light-emitting devices are rectangular, the recesses can be rectangular too. Moreover,, the recesses formed in the cells can be circular if the semiconductor light-emitting devices are circular. Moreover, each of the cells is configured to accommodate a single semiconductor light-emitting device. In other words, a single semiconductor light-emitting device is accommodated in a single cell.
Meanwhile, the plurality of electrodes 161c can have a plurality of electrode lines that are placed on bottoms of the cells 161d, and the plurality of electrode lines can extend to neighboring cells.
The plurality of electrodes 161c can be placed beneath the cells 161d, and different polarities can be applied to create an electric field within the cells 161d. To form an electric field, the dielectric layer 161b can form the bottom of the cells 161d while covering the electrodes 161c. With this structure, when different polarities are applied to a pair of electrodes 161c beneath each cell 161d, an electric field can be formed and the semiconductor light-emitting devices can be inserted into the cells 161d by the electric field.
The electrodes of the substrate 161 at the assembly site can be electrically connected to a power supply 171. The power supply 171 can perform the function of generating the electric field by applying power to the electrodes.
As shown in the drawings, the self-assembly device can have the magnet 163 for applying magnetic force to the semiconductor light-emitting devices. The magnet 163 can be disposed at a distance from the fluid chamber 162 to apply magnetic force to the semiconductor light-emitting devices 150. The magnet 163 can be disposed to face an opposite side of the assembly surface of the substrate 161, and the position of the magnet 163 can be controlled by the position controller 164 connected to the magnet 163.
The semiconductor light-emitting devices 1050 can have a magnetic material so that they can be moved within the fluid by a magnetic field.
Referring to
Here, the first conductive can refer to p-type, and the second conductive type can refer to n-type, or vice versa. As stated previously, the semiconductor light-emitting device can be formed without the active layer.
Meanwhile, the first conductive electrode 1052 can be formed after the semiconductor light-emitting device is assembled onto the wiring substrate by the self-assembling of the semiconductor light-emitting device. Further, the second conductive electrode 1056 can include a magnetic material. The magnetic material can refer a magnetic metal. The magnetic material can be Ni, SmCo, etc. In another example, the magnetic material can include at least one of Gd-based, La-based, and Mn-based materials.
The magnetic material can be provided in the form of particles on the second conductive electrode 1056. Alternatively, one layer of a conductive electrode including a magnetic material can be made of the magnetic material. As an example, the second conductive electrode 1056 of the semiconductor light-emitting device 1050 can include a first layer 1056a and a second layer 1056b, as illustrated in
As illustrated in the drawing, in this example, the first layer 1056a including the magnetic material can be disposed in contact with the second conductive semiconductor layer 1055. In this case, the first layer 1056a can be disposed between the second layer 1056b and the second conductive semiconductor layer 1055. The second layer 1056b can be a contact metal that is connected to the second electrode on the wiring substrate. However, the present disclosure is not necessarily limited to this, and the magnetic material can be disposed on one surface of the first conductive semiconductor layer.
Still referring to
Meanwhile, the fluid chamber 162 can be provided with a light-transmissive bottom plate 166, and the semiconductor light-emitting devices can be disposed between the bottom plate 166 and the substrate 161. An image sensor 167 can be disposed to face the bottom plate 166 so as to monitor the inside of the fluid chamber 162 through the bottom plate 166. The image sensor 167 can be controlled by a controller 172, and can include an inverted-type lens, CCD, etc. so as to observe the assembly surface of the substrate 161.
The self-assembly device can be configured to use a magnetic field and an electric field in combination. With this, the semiconductor light-emitting devices can be mounted at preset positions on the substrate by the electric field while being moved by changes in the position of the magnet. Hereinafter, the assembly process using the self-assembly device will be described in more detail.
First of all, a plurality of semiconductor light-emitting devices 1050 having a magnetic material can be formed through the process explained with reference to
Next, the substrate 161 can be fed to an assembly site, and the semiconductor light-emitting devices 1050 can be put into the fluid chamber 162 (
As described above, the assembly site on the substrate 161 can be a position at which the substrate 161 is placed in the fluid chamber 162 in such a way that an assembly surface where the semiconductor light-emitting devices 150 are assembled faces downwards.
In this case, some of the semiconductor light-emitting devices 1050 can sink to the bottom of the fluid chamber 162 and some of them can float in the fluid. When the fluid chamber 162 is provided with the light-transmissive bottom plate 166, some of the semiconductor light-emitting devices 1050 can sink to the bottom plate 166.
Next, magnetic force can be applied to the semiconductor light-emitting devices 1050 so that the semiconductor light-emitting devices 1050 in the fluid chamber 162 come up to the surface (
When the magnet 163 of the self-assembly device moves to the opposite side of the assembly surface of the substrate 161 from its original position, the semiconductor light-emitting devices 1050 can float in the fluid towards the substrate 161. The original position can refer to s position at which the magnet 163 is outside the fluid chamber 162. As another example, the magnet 163 can be configured as an electromagnet. In this case, an initial magnetic force can be generated by supplying electricity to the electromagnet.
Meanwhile, in this implementation, the spacing between the assembly surface of the substrate 161 and the semiconductor light-emitting devices 1050 can be controlled by adjusting strength of the magnetic force. For example, the spacing can be controlled by using weight, buoyancy, and magnetic force of the semiconductor light-emitting devices 1050. The spacing can be several millimeters to several tens of micrometers from the outermost part of the substrate 161.
Next, magnetic force can be applied to the semiconductor light-emitting devices 1050 so that the semiconductor light-emitting devices 1050 can move in one direction within the fluid chamber 162. For example, the magnet 163 can move in a horizontal direction to the substrate, a clockwise direction, or a counterclockwise direction (
Next, the semiconductor light-emitting devices 1050 can be guided to preset positions on the substrate 161 by applying an electric field so that the semiconductor light-emitting devices 1050 are mounted at the preset positions during their movement (
More specifically, an electric field can be generated by supplying power to bi-planar electrodes on the substrate 161, and the semiconductor light-emitting electrodes 1050 can be guided to be assembled only at the preset positions by the electric field. For example, the semiconductor light-emitting devices 1050 can be self-assembled at the assembly site on the substrate 161 by a selectively generated electric field. To this end, the substrate 161 can be provided with cells into which the semiconductor light-emitting devices 1050 are fitted.
Afterwards, unloading of the substrate 161 can be performed, thereby completing the assembly process. In a case where the substrate 161 is an assembly substrate, the assembled semiconductor light-emitting devices can be transferred onto a wiring substrate to carry out a subsequent process for realizing the display device, as described previously.
Meanwhile, after the semiconductor light-emitting devices 1050 are guided to the preset positions, the magnet 163 can be moved away from the substrate 161 such that the semiconductor light-emitting devices 1050 remaining in the fluid chamber 162 fall to the bottom of the fluid chamber 162 (
Thereafter, the semiconductor light-emitting devices 1050 on the bottom of the fluid chamber 162 can be collected, and the collected semiconductor light-emitting devices 1050 can be re-used.
In the above-explained self-assembly device and method, parts at far distances can be concentrated near a preset assembly site by using a magnetic field in order to increase assembly yields in a fluidic assembly, and guided to be selectively assembled only at the assembly site by applying an electric field to the assembly site. In this case, the assembly substrate can be positioned on top of a water tank, with its assembly surface facing downward, thereby minimizing the effect of gravity from the weights of the parts and avoiding non-specific binding and eliminating defects. For example, the assembly substrate can be placed on the top to increase transfer yields, thus minimizing the effect of gravity or friction and avoiding non-specific binding.
As seen from above, with the configuration, a large number of semiconductor light-emitting devices can be assembled at a time in a display device where individual pixels are made up of semiconductor light-emitting devices.
As such, a large number of semiconductor light-emitting devices can be pixelated on a small-sized wafer and then transferred onto a large-area substrate. This enables the manufacture of a large-area display device at a low cost.
Meanwhile, the present disclosure provides a structure and method of an assembly substrate for increasing the yields of the self-assembly process and the process yields after the self-assembly. The present disclosure is limited to a case where the substrate 161 is used as an assembly substrate. For example, the assemble substrate to be described later is not used as the wiring substrate of the display device. Hereinafter, the substrate 161 is referred to as an assembly substrate 161.
The present disclosure improves the process yields in two respects. First, the present disclosure prevents semiconductor light-emitting diodes from being mounted on undesired positions due to an electric field strongly formed at the undesired positions. Second, the present disclosure prevents the semiconductor light-emitting devices from remaining on the assemble substrate when transferring the semiconductor light-emitting devices mounted on the assemble substrate to another substrate.
The above-mentioned objectives are not individually achieved by different components. The above-described two objectives can be achieved by organic coupling of components to be described later and the assembly substrate 161 described above.
Before describing the present disclosure in detail, a post-process for manufacturing a display device after self-assembling will be described.
When the self-assembly process described with reference to
On the other hand, immediately after the self-assembly process is completed, the assembly surface of the assembly substrate 161 faces downwards (or the gravity direction). For the process after the self-assembly, the assembly substrate 161 can be turned by 180 degrees with the semiconductor light-emitting devices mounted thereon. In this process, there is a risk that the semiconductor light-emitting devices are likely to be separated from the assembly substrate 161. Therefore, a voltage must be applied to the plurality of electrodes 161c (hereinafter, referred to as assembly electrodes) while the assembly substrate 161 is turned. An electric field formed between the assembly electrodes prevents the semiconductor light-emitting devices from being separated from the assembly substrate 161 while the assembly substrate 161 is turned.
When the assembly substrate 161 is turned by 180 degrees after the self-assembly process, a shape as shown in
The transfer substrate 400 is a substrate for separating the semiconductor light-emitting devices placed on the assembly substrate 161 and transferring them to the wiring substrate. The transfer substrate 400 can be formed of PDMS (polydimethylsiloxane). Accordingly, the transfer substrate 400 can be referred to as a PDMS substrate.
The transfer substrate 400 is aligned above the assembly substrate 161 and then pressed onto the assembly substrate 161. When the transfer substrate 400 is fed above the assembly substrate 161, the semiconductor light-emitting devices 350 mounted on the assembly substrate 161 are transferred to the transfer substrate 400 by the adhesive force of the transfer substrate 400.
To this end, surface energy between the semiconductor light-emitting devices 350 and the transfer substrate 400 should be higher than surface energy between the semiconductor light-emitting devices 350 and the dielectric layer 161b. When there is a greater difference between the surface energy between the semiconductor light-emitting devices 350 and the transfer substrate 400 and the surface energy between the semiconductor light-emitting devices 350 and the dielectric layer 161b, the probability that the semiconductor light-emitting devices 350 are separated from the assembly substrate 161 is more increased. Therefore, it is preferable that the difference between the two surface energies is great.
Meanwhile, the transfer substrate 40 can include a plurality of protrusions 410 that allow pressure applied by the transfer substrate 400 to be concentrated on the semiconductor light-emitting devices 350 when pressing the transfer substrate 400 onto the assembly substrate 161. The protrusions 410 can be formed at the same interval as the semiconductor light-emitting devices mounted on the assembly substrate 161. When the transfer substrate 400 is pressed onto the assembly substrate 161 after the protrusions 410 are aligned to overlap the semiconductor light-emitting devices 350, the pressure applied by the transfer substrate 400 can be concentrated only on the semiconductor light-emitting devices 350. Thus, the present disclosure increases the probability that the semiconductor light-emitting devices are separated from the assembly substrate 161.
Meanwhile, in a state where the semiconductor light-emitting devices are mounted on the assembly substrate 161, parts of the semiconductor light-emitting devices are preferably exposed to the outside of recesses. If the semiconductor light-emitting devices 350 are not exposed to the outside of the recesses, the pressure applied by the transfer substrate 400 is not concentrated on the semiconductor light-emitting devices 350, which can lower the probability that the semiconductor light-emitting devices 350 are separated from the assembly substrate 161.
Lastly, referring to
On the other hand, in order for the semiconductor light-emitting devices 350 disposed on the transfer substrate 400 to be transferred to the wiring substrate 500, surface energy between the semiconductor light-emitting devices 350 and the wiring substrate 500 should be higher than surface energy between the semiconductor light-emitting devices 350 and the transfer substrate 400. When there is a greater difference between the surface energy between the semiconductor light-emitting devices 350 and the wiring substrate 500 and the surface energy between the semiconductor light-emitting devices 350 and the transfer substrate 400, the probability that the semiconductor light-emitting devices 350 are separated from the transfer substrate 400 is more increased. Therefore, it is preferable that the difference between the two surface energies is great.
After all the semiconductor light-emitting devices 350 disposed on the transfer substrate 400 are transferred onto the wiring substrate 500, the step of establishing electrical connection between the semiconductor light-emitting devices 350 and wiring electrodes provided on the wiring substrate can be performed. The structure of the wiring electrodes and the method of establishing the electrical connection can vary depending on the type of the semiconductor light-emitting devices 350.
An anisotropic conductive film can be disposed on the wiring substrate 500. In this case, the electrical connection can be established between the semiconductor light-emitting devices 350 and the wiring electrodes formed on the wiring substrate 500, simply by pressing the transfer substrate 400 onto the wiring substrate 500.
On the other hand, when manufacturing a display device including semiconductor light-emitting devices emitting light of different colors, the method described in
Semiconductor light-emitting devices emitting light of different colors can be individually assembled to different assembly substrates. Specifically, the assembly substrate 161 can include a first assembly substrate on which semiconductor light-emitting devices emitting light of a first color are mounted, a second assembly substrate on which semiconductor light-emitting devices emitting light of a second color different from the first color are mounted, and a third assembly substrate on which semiconductor light-emitting devices emitting light of a third color different from the first color and the second color are mounted. Different kinds of semiconductor light-emitting devices are assembled to assembly substrates, respectively, according to the method described in
Referring to
Specifically, the step of transferring the semiconductor light-emitting devices, which are mounted on the assembly substrate, to the wiring substrate can include pressing a first transfer substrate (stamp R) onto the first assembly substrate RED TEMPLATE to transfer the semiconductor light-emitting devices (RED chip) emitting the light of first color from the first assembly substrate RED TEMPLATE to the first transfer substrate (stamp R), pressing a second transfer substrate (stamp G) onto the second assembly substrate GREEN TEMPLATE to transfer semiconductor light-emitting devices (GREEN chip) emitting the light of second color from the second assembly substrate GREEN TEMPLATE to the second transfer substrate (stamp G), and pressing a third transfer substrate (stamp B) onto the third assembly substrate BLUE TEMPLATE to transfer semiconductor light-emitting devices (BLUE chip) emitting the light of third color from the third assembly substrate BLUE TEMPLATE to the third transfer substrate (stamp B).
Thereafter, the step of pressing the respective first to third transfer substrates onto the wiring substrate to transfer the semiconductor light-emitting devices emitting the light of first to third colors from the first to third transfer substrates to the wiring substrate, respectively.
According to the manufacturing method according to
On the contrary, referring to
Specifically, the step of transferring the semiconductor light-emitting devices, which are mounted on the assembly substrate, to the wiring substrate can include pressing a transfer substrate (RGB integrated stamp) onto the first assembly substrate RED TEMPLATE to transfer the semiconductor light-emitting devices (RED chip) emitting the light of first color from the first assembly substrate RED TEMPLATE to the transfer substrate (RGB integrated stamp), pressing the transfer substrate (RGB integrated stamp) onto the second assembly substrate GREEN TEMPLATE to transfer semiconductor light-emitting devices (GREEN chip) emitting the light of second color from the second assembly substrate GREEN TEMPLATE to the transfer substrate (RGB integrated stamp), and pressing the transfer substrate (RGB integrated stamp) onto the third assembly substrate BLUE TEMPLATE to transfer semiconductor light-emitting devices (BLUE chip) emitting the light of third color from the third assembly substrate BLUE TEMPLATE to the transfer substrate (RGB integrated stamp).
In this case, the alignment positions between each of the first to third assembly substrates and the transfer substrate can be different from each other. For example, when the alignment between the assembly substrates and the transfer substrate is completed, the relative position of the transfer substrate with respect to the first assembly substrate and the relative position of the transfer substrate with respect to the second assembly substrate can be different from each other. The transfer substrate can be shifted in its alignment position by a pitch of a sub pixel every time the type of the assembly substrate is changed. In this way, when the transfer substrate is sequentially pressed onto the first to third assembly substrates, all the three kinds of chips can be transferred to the transfer substrate.
Afterwards, similar to
According to the manufacturing method illustrated in
Unlike
According to the manufacturing method illustrated in
As described above, when manufacturing a display device including semiconductor light-emitting devices emitting light of different colors, the manufacturing method can be implemented in various ways.
Meanwhile, according to the self-assembly process illustrated in
In a self-assembly process, semiconductor light-emitting devices having a symmetrical structure such as a circular or elliptical shape can be used. Hereinafter, semiconductor light-emitting devices used in the self-assembly process to be described below can have a circular or elliptical shape. In addition, the semiconductor light-emitting devices can include a conductive electrode that contains a magnetic material, for example, Ni.
Referring to
According to
In the semiconductor light-emitting device 1150 with the structure illustrated in
The present disclosure is to solve the above problems, and proposes a semiconductor light-emitting device (element) having a new structure in which a surface thereof to be seated on an assembly substrate has high electrical conductivity. Hereinafter, the structure of the semiconductor light-emitting device according to the present disclosure will be described with reference to
Referring to
In one embodiment, the light-transmitting layer can be a transparent electrode layer 2058. The transparent electrode layer 2058 can be formed of a material having light transmittance of 90% or more in a visible light region and electrical conductivity of 1 S/m or more. To this end, the transparent electrode layer 2058 can be formed of indium tin oxide (ITO), indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), or indium zinc tin oxide (IZTO).
In this embodiment, the transparent electrode layer 2058 can have a thickness of 30 nm to 500 nm. If the transparent electrode layer 2058 is formed thinner than 30 nm, its electrical conductivity is low and does not affect the increase in dielectrophoretic force. On the other hand, if it is formed thicker than 500 nm, light transmittance decreases. In addition, the transparent electrode layer 2058 can be formed in the form of a thin film or can be patterned to include a plurality of protrusions so as to have surface roughness.
Hereinafter, a method for manufacturing a semiconductor light-emitting device 2050 according to one embodiment will be described.
First, a plurality of semiconductor light-emitting devices 2050 can be formed by growing an epitaxial layer on a growth substrate (wafer) and forming an electrode. The wafer can be an insulating substrate made of a light-transmitting material such as a glass substrate or a sapphire substrate. In addition, the wafer can be made of one selected from Si, SiC, GaN, GaP, GaAs, InP, InAs, etc. having excellent thermal conductivity.
The epitaxial layer can be grown on the wafer through metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), chemical vapor deposition (CVD), physical vapor deposition (PVD), hydrogen vapor phase epitaxy (HVPE), and the like. In this embodiment, the first conductive semiconductor layer 2055, the active layer 2054, and the second conductive semiconductor layer 2053 can correspond to the epitaxial layer. The first conductive semiconductor layer 2055, the active layer 2054, and the second conductive semiconductor layer 2053 can be sequentially formed on the wafer. In this case, the first conductive type can be n-type, and the second conductive type can be p-type. For example, a blue semiconductor light-emitting device and a green semiconductor light-emitting device can be formed of various layers which are mainly made of gallium nitride (GaN) and additionally contain indium (In) and/or aluminum (Al). On the other hand, a red semiconductor light-emitting device can be formed of various layers mainly made of gallium arsenide (GaAs). Meanwhile, according to the present disclosure, after the undoped semiconductor layer 2057 is formed on the wafer, the aforementioned epitaxial layer can be formed.
In the state in which the epitaxial layer is formed on the wafer, the plurality of semiconductor light-emitting devices 2050 can be formed through mesa and isolation etching processes. In addition, the first conductive electrode 2056 can be formed on a portion where the first conductive semiconductor layer 2055 is exposed, and the second conductive electrode 2052 can be formed on the second conductive semiconductor layer 2053. At this time, for self-assembly, one of the first conductive electrode 2056 and the second conductive electrode 2052 can be formed to include a magnetic layer. For example, the first conductive electrode 2056 can include a Ni layer having a thickness of 100 nm or more.
Next, after a temporary substrate 4000 is pressed on surfaces of the semiconductor light-emitting devices 2050 formed on the wafer, the semiconductor light-emitting devices 2050 can be separated from the wafer. Specifically, in a state in which the semiconductor light-emitting devices 2050 are transferred to one surface of the temporary substrate 4000, laser beams can be irradiated to portions where the semiconductor light-emitting devices 2050 are formed to separate the semiconductor light-emitting devices 2050 from the wafer.
Next, the transparent electrode layer 2058 can be deposited on the one surface of the temporary substrate 4000 onto which the semiconductor light-emitting devices 2050 are transferred. Accordingly, the transparent electrode layer 2058 can be formed on the undoped semiconductor layer 2057. The transparent electrode layer 2058 can be formed of a material such as ITO, and can be deposited by a thickness of 30 to 500 nm through E-beam, sputtering, plasma-enhanced chemical vapor deposition (PECVD), chemical vapor deposition (CVD), atomic layer deposition (ALD) or the like. The transparent electrode layer 2058 can be formed in the shape of a thin film or can be patterned to include a plurality of protrusions. When the transparent electrode layer 2058 is formed, the semiconductor light-emitting devices 2050 can be separated from the temporary substrate 4000 and dispersed in a fluid.
In another embodiment, the light-transmitting layer can be a semiconductor layer (hereinafter, referred to as a semiconductor layer) 3058 doped with an n-type dopant. The semiconductor layer 3058 can have electrical conductivity that is equal to or higher than that of the first conductive semiconductor layer 3055. Accordingly, the semiconductor layer 3058 can be a semiconductor layer that is doped with a high concentration of an n-type dopant, for example, Si. For example, the semiconductor layer 3058 can have electrical conductivity ranging from 100 S/m to 40000 S/m.
In this embodiment, the semiconductor layer 3058 can have a thickness ranging from 50 nm to 200 nm. If the semiconductor layer 3058 is formed thinner than 50 nm, it does not affect an increase in dielectrophoretic force due to low electrical conductivity. On the other hand, if the semiconductor layer 3058 is formed thicker than 200 nm, it can interfere with the growth of the epitaxial layer later. In addition, the semiconductor layer 3058 can be formed in the shape of a thin film or can be irregularly patterned to have surface roughness. In embodiments of the invention, In embodiments of the invention, the transparent electrode layer 3058 having the irregularly patterned surface, can have a minimum thickness of about of about 50 nm where the thickness is thinner and a maximum thickness of about 200 nm where the thickness is thicker. The irregularly pattern surface can be formed of a series of irregularly placed depressions and protrusions. The surface roughness of the semiconductor layer 3058 can also be regularly patterned so that the series of depressions and protrusions are formed regularly.
Hereinafter, a method for manufacturing a semiconductor light-emitting device 3050 according to another embodiment will be described.
According to the embodiment, after forming the semiconductor layer 3058 doped with an n-type dopant (hereinafter, referred to as a semiconductor layer) on the wafer, the undoped semiconductor layer 3057 and the epitaxial layer can be formed on the semiconductor layer 3058. In detail, the semiconductor layer 3058 can be formed to have electrical conductivity that is equal to or higher than that of the first conductive semiconductor layer 3055 of the epitaxial layer, and thus can be a layer doped with an n-type dopant at a high concentration. The semiconductor layer 3058 can be formed to have a thickness of 50 to 200 nm through MOCVD, MBE, CVD, PVD, HVPE, or the like. The semiconductor layer 3058 can be formed in the shape of a thin film or can have surface roughness. In particular, when grown at a low temperature, the semiconductor layer 3058 can have the surface roughness and can also have a discontinuous island structure.
Next, the undoped semiconductor layer 3057 and the epitaxial layer can be sequentially grown on the semiconductor layer 3058, thereby forming the plurality of semiconductor light-emitting devices 3050. The process and subsequent processes will be understood by the foregoing description.
When an AC voltage frequency (104 to 106 Hz) at which self-assembly was performed was applied, dielectrophoretic forces of circular semiconductor light-emitting devices A to D each having a diameter of 50 µm were measured. A is a semiconductor light-emitting device (including a Ti layer) according to
According to the graph, it can be confirmed that dielectrophoretic force is improved when a layer having electrical conductivity is additionally included, compared to the semiconductor light-emitting device D including only the undoped semiconductor layer. In particular, in the case of the semiconductor light-emitting device C including the n-GaN layer, the dielectrophoretic force was improved by about 2.5 times or more, compared to the semiconductor light-emitting device D including only the undoped semiconductor layer, and was higher than that of the related art semiconductor light-emitting device A including the Ti layer.
For example, the semiconductor light-emitting device according to the present disclosure has an effect of improving a self-assembly rate through a structure having increased dielectrophoretic force.
Hereinafter, a display device using a semiconductor light-emitting device according to the present disclosure will be described. Prior to explaining the display device, problems of the structure of the related art display device will be described with reference to
The display device 1000 can include a base (or substrate) 1010, wiring electrodes 1020 disposed on the base 1010, and semiconductor light-emitting devices 1150 disposed on the base 1010 to be electrically connected to the wiring electrodes 1020.
The base 1010 can be a flexible substrate, and can be formed of an insulating and flexible material to realize flexibility. For example, glass or polyimide (PI) can be included, and polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and the like can also be used. Further, the base 1010 can be formed of any one of a transparent material and a non-transparent material.
The wiring electrodes 1020 and the semiconductor light-emitting devices 1150 can be disposed on the base 1010. In addition, an insulating layer 1030 or the like can be disposed between the wiring electrodes 1020 and the semiconductor light-emitting devices 1150.
The wiring electrodes 1020 and the semiconductor light-emitting devices 1150 that are disposed on the base 1010 can be electrically connected to each other. In detail, the wiring electrodes 1020 can be electrically connected to the first conductive electrode 1156 and the second conductive electrode 1152 of the semiconductor light-emitting device. As an embodiment, a horizontal-type semiconductor light-emitting device, as illustrated in the drawing, can be connected to the wiring electrodes 1020 through connection electrodes 1060 extending from the conductive electrodes of the semiconductor light-emitting device.
In addition, the display device 1000 can include a planarization layer 1040 covering upper surfaces of the semiconductor light-emitting devices 1150 in a state where the semiconductor light-emitting devices 1150 are disposed. For example, the planarization layer 1040 can be formed of a light-transmitting transparent organic film material.
The related art display device 1000 including the semiconductor light-emitting devices according to
The conductive layer 1158 is a layer that is disposed to improve electrical conductivity of the surface of the semiconductor light-emitting device 1150 which is seated on the assembly substrate through self-assembly, and can include metal layers that are formed by depositing metals such as Ti, In, Sn, Au, Cr, and Mo. However, since the metals forming the conductive layer 1158 have low reflectivity of less than 90% for visible light generated from the semiconductor light-emitting device 1150, significant light loss can occur. In addition, considering light leaking to side surfaces of the semiconductor light-emitting device 1150 in addition to light lost from rear surfaces, there is a problem in that light extraction efficiency of the display device 1000 is generally lowered.
The present disclosure is to solve the problem, and proposes a display device including semiconductor light-emitting devices having a novel structure, capable of being efficiently self-assembled and improving light extraction efficiency. Hereinafter, a structure of a display device according to the present disclosure will be described with reference to
According to the present disclosure, the display device 2000, 3000 can include a base 2010, 3010, wiring electrodes 2020, 3020 disposed on the base 2010, 3010, and semiconductor light-emitting devices 2050, 3050. The wiring electrode 2020, 3020 can be electrically connected to the conductive electrodes of the semiconductor light-emitting device, for example, the first conductive electrode 2056, 3056 and the second conductive electrode 2052, 3052. An insulating layer 2030, 3030 can be disposed between the wire electrodes 2020, 3020 and the semiconductor light-emitting devices 2050, 3050. On the other hand, the structure illustrated in the drawings is for explaining the present disclosure, and the arrangement of the wiring electrodes, the electrical connection structure between the semiconductor light-emitting devices and the wiring electrodes, and the like in the actual display device can be various implemented depending on an operating method of the display device, the shape of the semiconductor light-emitting device, etc. but may not be limited to any one form. In addition, the display device 2000, 3000 can include a planarization layer 2040, 3040 covering upper surfaces of the semiconductor light-emitting devices 2050, 3050 in the state where the semiconductor light-emitting devices 2050, 3050 are disposed.
Meanwhile, the display device 2000, 3000 according to the present disclosure can include semiconductor light-emitting devices 2050, 3050 having a structure different from that of the related art display device 1000. Specifically, the semiconductor light-emitting device 2050, 3050 can include a first conductive semiconductor layer 2055, 3055 with a first conductive electrode 2056, 3056 formed thereon, an active layer 2054, 3054 disposed on the first conductive semiconductor layer 2055, 3055, a second conductive semiconductor layer 2053, 3053 disposed on the active layer 2054, 3054, and a second conductive electrode 2052, 3052 disposed on the second conductive semiconductor layer 2053, 3053.
Specifically, the first conductive electrode 2056, 3056 and the active layer 2054, 3054 can be disposed on one surface of the first conductive semiconductor layer 2055, 3055, and an undoped semiconductor layer (or buffer layer) 2057, 3057 can be disposed on another surface of the first conductive semiconductor layer 2055, 3055. In addition, a light-transmitting layer 2058, 3058 can be disposed on an opposite side of the first conductive semiconductor layer 2055, 3055 based on the undoped semiconductor layer 2057, 3057. For example, the first conductive semiconductor layer 2055, 3055 can be disposed on one surface of the undoped semiconductor layer 2057, 3057, and the light-transmitting layer 2058, 3058 can be disposed on another surface of the undoped semiconductor layer 2057, 3057. The light-transmitting layer 2058, 3058 can be disposed to improve dielectrophoretic force of the semiconductor light-emitting device 2050, 3050. The light-emitting layer 2058, 3058 can be formed of an electrically conductive material, and disposed on a surface of the semiconductor light-emitting device 2050, 3050 which is seated on an assembly substrate during self-assembly. In embodiments of the invention, the light transmitting layer (the semiconductor layer) 2058, 3058 can have a size or diameter that is greater than that of second conductive electrode 2052, 3052. The undoped layer 2057, 3057 is interposed between the light transmitting layer (the semiconductor layer) 2058, 3058 and the first conductive semiconductor layer 2055, 3055. Also, the undoped layer 2057, 3057 and the light transmitting layer (the semiconductor layer) 2058, 3058 are on a side of the first conductive semiconductor layer 2055, 3055 that is opposite to a side of the first conductive semiconductor layer 2055, 3055 having the first conductive electrode 2056, 3056. The undoped layer (buffer layer) 2057, 3057 can be a layer of constant thickness or a varying thickness.
In the display device 2000, 3000 according to the present disclosure, the light-transmitting layer 2058, 3058 can be disposed to face the base 2010, 3010, and the light-transmitting layer 2058, 3058 may not be electrically connected to the wiring electrodes 2020, 3020 disposed on the base 2010, 3010.
According to the present disclosure, the light-transmitting layer can be a transparent electrode layer 2058 formed of indium tin oxide (ITO), indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), or the like, or can be a semiconductor layer (hereinafter, referred to as a semiconductor layer) 3058 doped with an n-type dopant at a high concentration. The semiconductor layer 3058 forming the light-transmitting layer can have electrical conductivity equal to or higher than that of the first conductive semiconductor layer 3055.
According to the present disclosure, the display device can implement a structure in which light is emitted to a top, and a structure in which light is emitted to a bottom. In one embodiment, the display device 2000 can further include a reflective layer 2070 on the base 2010 to implement top emission. The reflective layer 2070 can be formed on the front surface of the base 2010 or at least at a position corresponding to a position where the semiconductor light-emitting device 2050, 3050 is disposed. Accordingly, light passing through the light-transmitting layer 2058, 3058 of the semiconductor light-emitting device 2050, 3050 can be re-reflected toward the front surface by the reflective layer 2070 disposed below the light-transmitting layer 2058, 3058. In this case, the reflective layer 2070 can be formed of Ag, Al, etc. having excellent reflectivity for visible light, and thus minimize light loss. According to this embodiment, the planarization layer 2040 can be formed of a transparent organic film material, and the connection electrode 2060 electrically connecting the conductive electrode and the wiring electrode of the semiconductor light-emitting device can be made of a transparent material, for example, implemented as a transparent electrode. In addition, the second conductive electrode 2052 of the semiconductor light-emitting device can also be configured as a transparent electrode.
As another embodiment, the display device 3000 can implement bottom emission in which light is extracted toward the substrate, and for this purpose, the base 3010 can be made of a light-transmitting material. In addition, the planarization layer 3040 can be coated with a material having high reflectivity, for example, a white insulator or a reflective nonconductive material, and the connection electrode 3060 and the second conductive electrode 3052 of the semiconductor light-emitting device can also be formed of a metal such as Ag or Al having high reflectivity.
According to this embodiment, among light generated by the semiconductor light-emitting device 2050, 3050, light directed toward the rear surface of the substrate can pass through the light-transmitting layer 3058 and the base 3010 so as to be extracted from a substrate side, while light directed to the front surface of the substrate can be reflected from the connection electrode 3060 and/or the planarization layer 3040 to the rear surface side of the substrate.
A display device according to the present disclosure can be a passive matrix (PM) type display device or an active matrix (AM) type display device.
The aforementioned display device may not be limited to the configurations and methods of the previous embodiments, but all or some of the embodiments can be selectively combined such that various modifications can be made.
This application is the National Stage filing under 35 U.S.C. 371 of International Application No. PCT/KR2020/009585 filed on Jul. 21, 2020, which is hereby expressly incorporated by reference into the present application.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/KR2020/009585 | 7/21/2020 | WO |
