BRIEF DESCRIPTION OF DRAWINGS
The invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
FIGS. 1A to 1B are cross sections of an embodiment of a method for fabricating a semiconductor light-emitting device;
FIG. 1C is a magnified diagram showing a multilayer epitaxial structure of FIG. 1B;
FIG. 1D is a plan view SEM (scanning electron microscope) image of a multilayer epitaxial structure of FIG. 1B;
FIG. 2 is a magnified diagram showing a part of the semiconductor substrate shown in FIGS. 1A and 1B; and
FIGS. 3A and 3B show several lattice planes of a cubic crystal lattice structure, respectively.