Claims
- 1. A semiconductor light-emitting device with a double hetero structure made of Al.sub.x Ga.sub.y In.sub.z N (where 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1), comprising: an active layer and an n-type cladding layer and a p-type cladding layer provided so as to sandwich the active layer, wherein the p-type cladding layer has a region containing hydrogen and a region containing no hydrogen.
- 2. A semiconductor light-emitting device according to claim 1, wherein the active layer is made of undoped Al.sub.x Ga.sub.y In.sub.z N, or Al.sub.x Ga.sub.y In.sub.z N doped with a p-type impurity and an n-type impurity.
- 3. A semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device is a semiconductor laser, and the active layer is doped with hydrogen in the vicinity of two facets.
- 4. A method for producing a semiconductor light-emitting device, comprising the steps of:
- forming a mask layer having a pattern on a semiconductor structure made of Al.sub.x Ga.sub.y In.sub.z N (where 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1), including an active layer and first and second cladding layers sandwiching the active layer, the semiconductor structure being provided on a substrate, the first cladding layer being sandwiched between the substrate and the active layer;
- introducing hydrogen into the second cladding layer, using the mask layer as a mask, while keeping the semiconductor structure in a gas containing hydrogen excited into plasma and;
- removing the mask layer; and
- forming an electrode on the semiconductor structure.
- 5. A method for producing a semiconductor light-emitting device according to claim 4, wherein, in the step of introducing hydrogen, the hydrogen is plasma-exited by using electron cyclotron resonance.
- 6. A method for producing a semiconductor light-emitting device according to claim 4, wherein the mask layer is an n-type semiconductor layer or an undoped semiconductor layer.
- 7. A method for producing a semiconductor light-emitting device according to claim 4, wherein the mask layer is made of silicon oxide or silicon nitride.
- 8. A method for producing a semiconductor light-emitting device, comprising the steps of:
- forming a semiconductor structure made of Al.sub.x Ga.sub.y In.sub.z N (where 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1), including an active layer and first and second cladding layers sandwiching the active layer on a substrate;
- forming a cavity of a semiconductor laser by dry etching;
- introducing hydrogen into a semiconductor layered structure through a facet of the cavity while keeping the substrate in a gas containing hydrogen excited into plasma or a hydrogen compound excited into plasma.
Priority Claims (1)
Number |
Date |
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6-169394 |
Jul 1994 |
JPX |
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Parent Case Info
This application is a division of U.S. patent application Ser. No. 08/978,848, filed Nov. 26, 1997, which is a division of U.S. patent application Ser. No. 08/619,483, filed on Mar. 21, 1996, now U.S. Pat. No. 5,751,013, which is a continuation of PCT international application No. PCT/JP95/01447 filed on Jul. 20, 1995.
The entire disclosure of U.S. patent application Ser. No. 08/978,848 filed Nov. 26, 1997, which is a division of U.S. patent application Ser. No. 08/619,483 filed Mar. 21, 1996, is expressly incorporated by reference herein.
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Divisions (2)
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Number |
Date |
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Parent |
978848 |
Nov 1997 |
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Parent |
619483 |
Mar 1996 |
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Continuations (1)
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PCTJP9501447 |
Jul 1995 |
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