Claims
- 1. A semiconductor light-emitting device comprising:a substrate; a first compound semiconductor layer including an active layer formed on the substrate; a second compound semiconductor layer comprising a ridge formed on the first compound semiconductor layer; a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer; a current blocking layer formed above the first compound semiconductor layer outside the protective film, the current blocking layer being formed below a layer having the same layers as the second compound semiconductor layer has.
- 2. The semiconductor light-emitting device according to claim 1, wherein the current blocking layer is a semiconductor layer.
- 3. The semiconductor light-emitting device according to claim 2, wherein the current blocking layer is a first conductivity type semiconductor layer or a high resistance semiconductor layer.
- 4. The semiconductor light-emitting device according to claim 1, wherein the first compound semiconductor layer has layers, respectively formed above and below the active layer, having a smaller refractive index than that of the active layer.
- 5. The semiconductor light-emitting device according to claim 4, wherein the layer formed below the active layer having the smaller refractive index is a first conductivity type cladding layer, and the layer formed above the active layer is a second conductivity type first cladding layer.
- 6. The semiconductor light-emitting device according to claim 5, wherein the first compound semiconductor layer includes a second conductivity type first cladding layer formed above the active layer and an oxidation suppressive layer formed on the second conductivity type first cladding layer.
- 7. The semiconductor light-emitting device according to claim 1, wherein the second compound semiconductor layer includes a layer having a smaller refractive index than that of the active layer.
- 8. The semiconductor light-emitting device according to claim 7, wherein the second compound semiconductor layer includes a second conductivity type second cladding layer having a smaller refractive index that of the active layer.
- 9. The semiconductor light-emitting device according to claim 1, wherein a contact layer is formed on substantially the entire surface of a ridge portion of the second compound semiconductor layer.
- 10. The semiconductor light-emitting device according to claim 5, wherein the protective film has an opening and the second compound semiconductor layer is formed in the opening.
- 11. The semiconductor light-emitting device according to claim 1, wherein no protective film is formed on a side surface of the ridge portion of the second compound semiconductor layer.
- 12. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device is a self-pulsation type semiconductor laser.
- 13. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device is a semiconductor laser.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10/271634 |
Sep 1998 |
JP |
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Parent Case Info
This application is a division of prior application Ser. No. 09/404,376 filed Sep. 24, 1999 Now U.S. Pat. No. 6,387,721.
US Referenced Citations (6)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0 867 949 |
Sep 1998 |
EP |
Non-Patent Literature Citations (2)
Entry |
Takayama T. et al. “800 MW Peak-Power Self-Sustained Pulsation Gaalas Laser Diodes” IEEE Journal of Selected Topics In Quantum Electronics, Us, IEEE Service Center, vol. 1, No. 2, pp 562-568 XP000521116. |
European Search Report dated Feb. 1, 2000. |