Claims
- 1. A semiconductor light-emitting device comprising:
an active light-emitting region; a first cladding layer; and a first current injection layer between the active light-emitting region and the first cladding layer.
- 2. The semiconductor light-emitting device of claim 1, wherein the first current injection layer and the active light-emitting region are structured and arranged to supply electric current substantially parallel with a plane of the first current injection layer and to inject carriers substantially perpendicular to a plane of the active light-emitting region.
- 3. The semiconductor light-emitting device of claim 1, wherein the first current injection layer and the active light-emitting region are substantially coextensive.
- 4. The semiconductor light-emitting device of claim 1, wherein the first current injection layer and the first cladding layer are substantially coextensive.
- 5. The semiconductor light-emitting device of claim 1, wherein the first current injection layer has an in-plane lattice constant which is substantially matched with an in-plane lattice constant of the first cladding layer.
- 6. The semiconductor light-emitting device of claim 1, wherein the first current injection layer has an in-plane lattice constant which is substantially matched with an in-plane lattice constant of the active light-emitting region.
- 7. The semiconductor light-emitting device of claim 1, wherein the first current injection layer has an in-plane lattice constant which is substantially matched with an in-plane lattice constant of the first cladding layer and an in-plane lattice constant of the active light-emitting region.
- 8. The semiconductor light-emitting device of claim 1, wherein the first current injection layer has a thickness of less than about 1 micron.
- 9. The semiconductor light-emitting device of claim 1, wherein the first current injection layer has a thickness of from about 0.1 to about 0.5 micron.
- 10. The semiconductor light-emitting device of claim 1, wherein the first cladding layer is undoped.
- 11. The semiconductor light-emitting device of claim 1, wherein the first current injection layer is doped.
- 12. The semiconductor light-emitting device of claim 1, wherein the first cladding layer is undoped and the first current injection layer is doped.
- 13. The semiconductor light-emitting device of claim 1, wherein the first current injection layer comprises at least one material selected from Ga and In, and at least one material selected from As, P and Sb.
- 14. The semiconductor light-emitting device of claim 13, wherein the first current injection layer comprises GaSb, GaAs, InP, GaInAs, InAs, GaSb/InAs, GaInSb, GaSb/GaAs, InAs/InSb and/or GaInSb/GaInAs.
- 15. The semiconductor light-emitting device of claim 13, wherein the first current injection layer comprises GaSb.
- 16. The semiconductor light-emitting device of claim 13, wherein the first current injection layer further comprises a dopant.
- 17. The semiconductor light-emitting device of claim 16, wherein the dopant comprises Be and/or Zn.
- 18. The semiconductor light-emitting device of claim 16, wherein the dopant comprises Te, Se and/or Si.
- 19. The semiconductor light-emitting device of claim 1, wherein the first cladding layer comprises at least one material selected from Al, Ga and In, and at least one material selected from As, P and Sb.
- 20. The semiconductor light-emitting device of claim 19, wherein the first cladding layer is undoped.
- 21. The semiconductor light-emitting device of claim 1, further comprising a second current injection layer adjacent to an opposite side of the active light-emitting region from the first current injection layer.
- 22. The semiconductor light-emitting device of claim 21, wherein the second current injection layer is doped.
- 23. The semiconductor light-emitting device of claim 21, further comprising a second cladding layer adjacent to the second current injection layer on an opposite side from the active light-emitting region.
- 24. The semiconductor light-emitting device of claim 23, wherein the second cladding layer is undoped.
- 25. The semiconductor light-emitting device of claim 21, further comprising a first metal contact connected to the first current injection layer, and a second metal contact connected to the second current injection layer.
- 26. The semiconductor light-emitting device of claim 1, wherein the device comprises an edge-emitting diode laser.
- 27. The semiconductor light-emitting device of claim 1, wherein the device comprises an edge-emitting light-emitting diode.
- 28. The semiconductor light-emitting device of claim 1, wherein the active light-emitting region is an interband cascade active region.
- 29. The semiconductor light-emitting device of claim 1, wherein the device comprises a surface-emitting diode laser.
- 30. The semiconductor light-emitting device of claim 1, wherein the device comprises a surface-emitting light-emitting diode.
- 31. The semiconductor light-emitting device of claim 1, wherein the device comprises a vertical cavity surface emitting laser.
- 32. A method of making a semiconductor light-emitting device, the method comprising:
depositing a first cladding layer; depositing a first current injection layer over the first cladding layer; and depositing an active light-emitting region over the first current injection layer.
- 33. The method of claim 32, wherein the first current injection layer is substantially coextensive with the active light-emitting region.
- 34. The method of claim 32, wherein the first current injection layer is substantially coextensive with the first cladding layer.
- 35. The method of claim 32, further comprising depositing a second current injection layer over the active light-emitting region.
- 36. The method of claim 35, further comprising depositing a second cladding layer over the second current injection layer.
- 37. A method of making a semiconductor light-emitting device, the method comprising:
depositing an active light-emitting region; depositing a top current injection layer over the active light-emitting region; and depositing a top cladding layer over the top current injection layer.
- 38. The method of claim 37, wherein the top current injection layer is substantially coextensive with the active light-emitting region.
- 39. The method of claim 37, wherein the top current injection layer is substantially coextensive with the top cladding layer.
- 40. The method of claim 37, wherein the active light-emitting region is deposited over a bottom current injection layer.
- 41. The method of claim 40, wherein the bottom current injection layer is deposited over a bottom cladding layer.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit of U.S. Provisional Patent Application Serial No. 60/468,799 filed May 8, 2003, which is incorporated herein by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60468799 |
May 2003 |
US |