1. Technical Field
The present disclosure generally relates to semiconductor lighting module packages, and particularly to a semiconductor lighting module package with nanoscale reflector.
2. Description of the Related Art
Semiconductor lighting modules have many advantages, such as high luminosity, low operational voltage, low power consumption, compatibility with integrated circuits, easy driving, long-term reliability, and environmental friendliness, which have promoted the semiconductor lighting modules as a widely used light source.
Reflection of commonly used semiconductor lighting modules is not good due to light absorption, such that light extraction of the semiconductor lighting modules is reduced.
What is needed, therefore, is a semiconductor lighting module which can avoid reduction of the light extraction, and ameliorate the described limitations.
Many aspects of the disclosure can be better understood with reference to the drawings. The components in the drawings are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the semiconductor lighting module package. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the views.
Embodiments of a semiconductor lighting module package as disclosed are described in detail here with reference to the drawings.
Referring to
The lead frame 11 is arranged on the first surface 101 of the substrate 10 including a carrier portion 111 and a connecting portion 112. The carrier portion 111 is electrically insulated from the connecting portion 112. The lead frame 11 is made of copper or other electrically conductive metal and is not limited to the shape shown in this embodiment.
The semiconductor lighting element 12 is arranged on the carrier portion 111 of the lead frame 11 and electrically connecting to the connecting portion 112 and the carrier portion 111 separately with metal wires 16a and 16b. The semiconductor lighting element 12 emits light of at least one first wavelength. The semiconductor lighting element 12 can be a light emitting diode, organic light emitting diode, or laser diode.
The plurality of nanoscale reflectors 13 is arranged separately on the first surface 101 of the substrate 10 and the lead frame 11 and can be aluminum or titanium formed by electron beam lithography or photolithography. In this embodiment, a plurality of first nanoscale reflectors 13a is arranged on the first surface 101 of the substrate 10, a plurality of second nanoscale reflectors 13b is arranged on the carrier portion 111 of the lead frame 11, and a plurality of third nanoscale reflectors 13c is arranged on the connecting portion 112 of the lead frame 11.
Referring to
Referring to
Referring to
The lead frame 11 is arranged on the first surface 101 of the substrate 10 including a carrier portion 111, a first connecting portion 112a, and a second connecting portion 112b. The carrier portion 111, the first connecting portion 112a, and the second connecting portion 112b are electrically insulating with each other. The lead frame 11 is made of copper or other electrically conductive metal and is not limited to the shape of this embodiment.
The semiconductor lighting element 12 is arranged on the carrier portion 111 of the lead frame 11 and electrically connecting to the second connecting portion 112b and the first connecting portion 112a separately with metal wires 16a and 16b. The semiconductor lighting element 12 emits light of at least one first wavelength. The semiconductor lighting element 12 can be light emitting diode, organic light emitting diode, or laser diode. The difference between the semiconductor lighting module packages 1 and 2 is that the lead frame 11 in the semiconductor lighting module package 2 is a structure of different thermal and electrical conduction pathway. The heat of the semiconductor lighting element 12 of the semiconductor lighting module package 2 is dissipated mainly through the carrier portion 111.
The plurality of nanoscale reflectors 13 is arranged separately on the first surface 101 of the substrate 10 and the lead frame 11 by electron beam lithography or photolithography. In this embodiment, a plurality of first nanoscale reflectors 13a is arranged on the first surface 101 of the substrate 10, a plurality of second nanoscale reflectors 13b is arranged on the carrier portion 111 of the lead frame 11, a plurality of third nanoscale reflectors 13c is arranged on the first connecting portion 112a of the lead frame 11, and a plurality of fourth nanoscale reflectors 13j is arranged on the second connecting portion 112b of the lead frame 11.
Referring to
The lead frame 11 is arranged on the first surface 101 of the substrate 10 including a carrier portion 111, a first connecting portion 112a, and a second connecting portion 112b. The carrier portion 111, the first connecting portion 112a, and the second connecting portion 112b are electrically insulating with each other. The lead frame 11 is made of copper or other electrically conductive metal and is not limited to the shape shown in this embodiment.
The first semiconductor lighting element 12a and the second semiconductor lighting element 12b are arranged on the carrier portion 111 of the lead frame 11 and electrically connecting to the carrier portion 111, the first connecting portion 112a, and the second connecting portion 112b separately by metal wires. The first semiconductor lighting element 12a and the second semiconductor lighting element 12b can emit light of the same or different wavelengths. The first semiconductor lighting element 12a and the second semiconductor lighting element 12b can be light emitting diodes, organic light emitting diodes, or laser diodes.
The plurality of nanoscale reflectors 13 is arranged separately on the first surface 101 of the substrate 10 and the lead frame 11 by electron beam lithography or photolithography. In this embodiment, a plurality of first nanoscale reflectors 13a is arranged on the first surface 101 of the substrate 10, a plurality of second nanoscale reflectors 13b is arranged on the carrier portion 111 of the lead frame 11, a plurality of third nanoscale reflectors 13c is arranged on the first connecting portion 112a of the lead frame 11, and a plurality of fourth nanoscale reflectors 13j is arranged on the second connecting portion 112b of the lead frame 11.
Referring to
Each of the embodiments mentioned above can further comprise a cover layer 14 covering the semiconductor lighting element 12 and partial lead frame 11 with material including silicon dioxide, epoxy, or other transparent material. The cover layer 14 can further include diffusion particles (not shown) for improving refraction of light. The cover layer 14 can be formed on the first surface 101 of the substrate 10 by transfer molding or injection molding. Furthermore, the cover layer 14 can further comprise at least one wavelength converting element 15 excited by light of a first wavelength and emitting light of a second wavelength. The wavelength converting element 15 can be YAG, TAG, aluminate, silicate, nitride, oxynitride, phosphide, sulfide, or a combination thereof. Taking the first embodiment of
It is to be understood, however, that even though numerous characteristics and advantages of the disclosure have been set forth in the foregoing description, together with details of the structures and functions of the embodiment(s), the disclosure is illustrative only, and changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the disclosure to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.
Number | Date | Country | Kind |
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99103137 | Feb 2010 | TW | national |