SEMICONDUCTOR LIGHTING MODULE PACKAGE

Abstract

A semiconductor lighting module package includes a substrate, a lead frame located on the substrate, and a semiconductor lighting element. The lead frame has a carrier portion and a connecting portion spaced from the carrier portion. The semiconductor lighting element is electrically connected with the carrier portion and the connecting portion respectively. A plurality of nanoscale reflectors are formed on the carrier portion. A plurality of nanoscale reflectors are formed on the connecting portion. Shapes of the nanoscale reflectors formed on the carrier portion are different from shapes of the nanoscale reflectors formed on the connecting portion.

Description

FIELD

The present disclosure generally relates to semiconductor lighting module packages, and particularly to a semiconductor lighting module package with nanoscale reflectors.

BACKGROUND

Semiconductor lighting modules have many advantages, such as high luminosity, low operational voltage, low power consumption, compatibility with integrated circuits, easy driving, long-term reliability, and environmental friendliness, which have promoted the semiconductor lighting modules as a widely used light source.

Reflection of commonly used semiconductor lighting modules is poor due to light absorption, such that light extraction of the semiconductor lighting modules is reduced.

What is needed, therefore, is a semiconductor lighting module which can avoid reduction of the light extraction, and ameliorate the described limitations.

BRIEF DESCRIPTION OF THE DRAWINGS

Many aspects of the disclosure can be better understood with reference to the drawings. The components in the drawings are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the semiconductor lighting module package. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the views.

FIG. 1A is a schematic cross section of a semiconductor lighting module package in accordance with a first embodiment of the present disclosure.

FIG. 1B is a schematic top view of the semiconductor lighting module package in accordance with the first embodiment, with a cover layer thereof being removed for clarity.

FIGS. 2A to 2C are schematic cross sections of a plurality of nanoscale reflectors of the semiconductor lighting module package of FIG. 1A.

FIGS. 3A to 3F are schematic cross sections of a plurality of nanoscale reflectors with modified structures.

FIG. 4A is a schematic cross section of a semiconductor lighting module package in accordance with a second embodiment.

FIG. 4B is a schematic top view of the semiconductor lighting module package in accordance with the second embodiment, with a cover layer thereof being removed for clarity.

FIG. 5 is a view similar to FIG. 4B, showing a semiconductor lighting module package in accordance with a third embodiment.

FIG. 6 is a view similar to FIG. 4B, showing a semiconductor lighting module package in accordance with a fourth embodiment.

DETAILED DESCRIPTION

It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein can be practiced without these specific details. In other instances, methods, procedures and components have not been described in detail so as not to obscure the related relevant feature being described. Also, the description is not to be considered as limiting the scope of the embodiments described herein. The drawings are not necessarily to scale and the proportions of certain parts have been exaggerated to better illustrate details and features of the present disclosure.

Several definitions that apply throughout this disclosure will now be presented.

The term “comprising,” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series and the like.

FIGS. 1A and 1B show a semiconductor lighting module package 1 in accordance with a first embodiment includes a substrate 10, a lead frame 11, a semiconductor lighting element 12, a plurality of nanoscale reflectors 13, and a cover 14. The substrate 10 includes a first surface 101 and a second surface 102 arranged on the two opposite sides of the substrate 10. The substrate 10 can be plastic, polymer, ceramic, silicon, metal, or a combination thereof.

The lead frame 11 is arranged on the first surface 101 of the substrate 10 including a carrier portion 111 and a connecting portion 112. The carrier portion 111 is electrically insulated from the connecting portion 112. The lead frame 11 is made of copper or other electrically conductive metal and is not limited to the shape shown in this embodiment or any other particular shape.

The semiconductor lighting element 12 is arranged on the carrier portion 111 of the lead frame 11 and electrically separately connected to the connecting portion 112 and the carrier portion 111 by metal wires 16a and 16b. The semiconductor lighting element 12 emits light of at least one first wavelength. The semiconductor lighting element 12 can be a light emitting diode, organic light emitting diode, or laser diode.

The plurality of nanoscale reflectors 13 is arranged separately on the first surface 101 of the substrate 10 and the lead frame 11 and can be aluminum or titanium formed by electron beam lithography or photolithography. In this embodiment, a plurality of first nanoscale reflectors 13a is arranged on the first surface 101 of the substrate 10, a plurality of second nanoscale reflectors 13b is arranged on the carrier portion 111 of the lead frame 11, and a plurality of third nanoscale reflectors 13c is arranged on the connecting portion 112 of the lead frame 11.

FIGS. 2A to 2C show the plurality of first nanoscale reflectors 13a is arranged on the substrate 10 with a distance between every two of the plurality of first nanoscale reflectors 13a having a distance P₀ and a gap between every two of the plurality of first nanoscale reflectors 13a having a depth H₀. The plurality of second nanoscale reflectors 13b are arranged on the carrier portion 111 with a distance between every two of the plurality of second nanoscale reflectors 13b having a distance P₁ and a gap between every two of the plurality of second nanoscale reflectors 13b having a depth H₁. The plurality of third nanoscale reflectors 13c is arranged on the connecting portion 112 with a distance between every two of the plurality of third nanoscale reflectors 13c having a distance P₂ and a gap between every two of the plurality of third nanoscale reflectors 13c having a depth H₂. In this embodiment, the distances P₀, P₁, P₂ are all less than a half wavelength of the visible light emitted by the lighting element 12 and are preferably approximately 90 nm to approximately 130 nm. And a ratio of the depths H₀, H₁, H₂ over the distances P₀, P₁, P₂ respectively is not less than 2. The nanoscale reflectors 13a, 13b, 13c are capable of performing subwavelength grating and the spacing of each of the gaps is less than half the wavelength of the visible light. The light generated by the semiconductor lighting element 12 has at least a part which is reflected by the nanoscale reflectors 13a, 13b, 13c. Each of the nanoscale reflectors 13a, 13b, 13c has a reflective index exceeding that of each of the substrate 10 and the lead frame 11.

FIGS. 3A to 3F show exemplary differently shaped nanoscale reflectors 13d to 13i are provided, which are sequentially shaped as trapezoid, inverted trapezoid, elliptical, semicircular, pyramidical, inverted pyramidical. The nanoscale reflectors are rectangular in FIGS. 2A to 2C. The nanoscale reflectors can be at least one shape mentioned above or a combination thereof and not limited to them.

FIGS. 4A and 4B show a semiconductor lighting module package 2 in accordance with a second embodiment includes a substrate 10, a lead frame 11, a semiconductor lighting element 12, a plurality of nanoscale reflectors 13, and a cover 14. The substrate 10 includes a first surface 101 and a second surface 102 arranged on the two opposite sides of the substrate 10.

The lead frame 11 is arranged on the first surface 101 of the substrate 10 including a carrier portion 111, a first connecting portion 112a, and a second connecting portion 112b. The carrier portion 111, the first connecting portion 112a, and the second connecting portion 112b are electrically insulated from each other. The lead frame 11 is made of copper or other electrically conductive metal and is not limited to the shape of this embodiment.

The semiconductor lighting element 12 is arranged on the carrier portion 111 of the lead frame 11 and electrically connecting to the second connecting portion 112b and the first connecting portion 112a separately with metal wires 16a and 16b. The semiconductor lighting element 12 emits light of at least one first wavelength. The semiconductor lighting element 12 can be light emitting diode, organic light emitting diode, or laser diode. The difference between the semiconductor lighting module packages 1 and 2 is that the lead frame 11 in the semiconductor lighting module package 2 is a structure of different thermal and electrical conduction pathway. The heat of the semiconductor lighting element 12 of the semiconductor lighting module package 2 is dissipated mainly through the carrier portion 111.

The plurality of nanoscale reflectors 13 are arranged separately on the first surface 101 of the substrate 10 and the lead frame 11 by electron beam lithography or photolithography. In this embodiment, a plurality of first nanoscale reflectors 13a is arranged on the first surface 101 of the substrate 10, a plurality of second nanoscale reflectors 13b is arranged on the carrier portion 111 of the lead frame 11, a plurality of third nanoscale reflectors 13c is arranged on the first connecting portion 112a of the lead frame 11, and a plurality of fourth nanoscale reflectors 13j is arranged on the second connecting portion 112b of the lead frame 11.

FIG. 5 shows a semiconductor lighting module package 3 in accordance with a third embodiment includes a substrate 10, a lead frame 11, a first semiconductor lighting element 12a, a second semiconductor lighting element 12b, and a plurality of nanoscale reflectors 13. The substrate 10 includes a first surface 101 and a second surface (not shown) arranged oppositely on the two sides of the substrate 10.

The lead frame 11 is arranged on the first surface 101 of the substrate 10 including a carrier portion 111, a first connecting portion 112a, and a second connecting portion 112b. The carrier portion 111, the first connecting portion 112a, and the second connecting portion 112b are electrically insulating with each other. The lead frame 11 is made of copper or other electrically conductive metal and is not limited to the shape shown in this embodiment.

The first semiconductor lighting element 12a and the second semiconductor lighting element 12b are arranged on the carrier portion 111 of the lead frame 11 and electrically connecting to the carrier portion 111, the first connecting portion 112a, and the second connecting portion 112b by separate metal wires. The first semiconductor lighting element 12a and the second semiconductor lighting element 12b can emit light of the same or different wavelengths. The first semiconductor lighting element 12a and the second semiconductor lighting element 12b can be light emitting diodes, organic light emitting diodes, or laser diodes.

The plurality of nanoscale reflectors 13 is arranged separately on the first surface 101 of the substrate 10 and the lead frame 11 by electron beam lithography or photolithography. In this embodiment, a plurality of first nanoscale reflectors 13a is arranged on the first surface 101 of the substrate 10, a plurality of second nanoscale reflectors 13b is arranged on the carrier portion 111 of the lead frame 11, a plurality of third nanoscale reflectors 13c is arranged on the first connecting portion 112a of the lead frame 11, and a plurality of fourth nanoscale reflectors 13j is arranged on the second connecting portion 112b of the lead frame 11.

FIG. 6 shows a semiconductor lighting module package 4 in accordance with a fourth embodiment includes a substrate 10, a lead frame 11, a first semiconductor lighting element 12a, a second semiconductor lighting element 12b, a third semiconductor lighting element 12c, and a plurality of nanoscale reflectors 13. The first semiconductor lighting element 12a and the second semiconductor lighting element 12b are arranged on the first carrier portion 111a of the lead frame 11. The third semiconductor lighting element 12c is arranged on the second carrier portion 111b of the lead frame 11. The semiconductor lighting elements 12a, 12b, 12c are electrically connecting to the carrier portions 111a, 111b and the connecting portions 112a, 112b, 112c separately by metal wires. In addition to the plurality of nanoscale reflectors 13a, 13b, 13c, 13j as mentioned above in FIG. 5, this embodiment further comprises a plurality of nanoscale reflectors 13m arranged on the third connecting portion 112c of the lead frame 11, and a plurality of nanoscale reflectors 13k arranged on the second carrier portion 111b of the lead frame 11. The semiconductor lighting elements 12a, 12b, and 12c can emit light of the same or different wavelengths.

Each of the embodiments mentioned above can further comprise cover layer 14 covering the semiconductor lighting element 12 and partial lead frame 11 with material including silicon dioxide, epoxy, or other transparent material. The cover layer 14 can further include light diffusing particles (not shown) for improving light refraction. The cover layer 14 can be formed on the first surface 101 of the substrate 10 by transfer molding or injection molding. Furthermore, the cover layer 14 can further comprise at least one wavelength converting element 15 excited by light of a first wavelength and emitting light of a second wavelength. The wavelength converting element 15 can be YAG, TAG, aluminate, silicate, nitride, oxynitride, phosphide, sulfide, or a combination thereof. Using FIGS. 1A-1B as example, the wavelength converting elements 15 are excited by the light generated by the semiconductor lighting element 12 to generate a light having a wavelength different from that of the light generated by the semiconductor lighting element 12. Then the two lights with different wavelengths are mixed together to generate a desired light color, for example, white light to be emitted from the semiconductor lighting module package 1.

The embodiments shown and described above are only examples. Many details are often found in the art such as the other features of a semiconductor lighting module package. Therefore, many such details are neither shown nor described. Even though numerous characteristics and advantages of the present technology have been set forth in the foregoing description, together with details of the structure and function of the present disclosure, the disclosure is illustrative only, and changes may be made in the detail, especially in matters of shape, size and arrangement of the parts within the principles of the present disclosure up to, and including the full extent established by the broad general meaning of the terms used in the claims. It will therefore be appreciated that the embodiments described above may be modified within the scope of the claims.

Claims

1. A semiconductor lighting module package, comprising: a substrate;a lead frame located on the substrate, the lead frame having a carrier portion and a connecting portion spaced from the carrier portion;a semiconductor lighting element electrically connecting with the carrier portion and the connecting portion respectively; andwherein a plurality of nanoscale reflectors are formed on the carrier portion, a plurality of nanoscale reflectors are formed on the connecting portion, and shapes of the nanoscale reflectors formed on the carrier portion are different from shapes of the nanoscale reflectors formed on the connecting portion.

2. The semiconductor lighting module package of claim 1, wherein a plurality of nanoscale reflectors are formed on a surface of the substrate located between the carrier portion and the connecting portion.

3. The semiconductor lighting module package of claim 2, wherein shapes of the nanoscale reflectors formed on the substrate are different from shapes of the nanoscale reflectors formed on either the carrier portion or connecting portion.

4. The semiconductor lighting module package of claim 1, wherein a distance between every two of the nanoscale reflectors has a distance which is less than a half wavelength of a visible light.

5. The semiconductor lighting module package of claim 4, wherein a gap between the every two of the plurality of nanoscale reflectors has a depth, and a ratio of the depth over the distance is not less than 2.

6. The semiconductor lighting module package of claim 1, wherein the nanoscale reflectors are metal.

7. The semiconductor lighting module package of claim 1, wherein the nanoscale reflectors are trapezoid, inverted trapezoid, elliptical, semicircular, pyramidical, inverted pyramidical or rectangular.

8. A semiconductor lighting module package, comprising: a carrier portion;a first connecting portion;a second connecting portion; anda semiconductor lighting element, the carrier portion, the first connecting portion and the second connecting portion being electrically insulated from each other, the semiconductor lighting element being arranged on the carrier portion and electrically connected to the first connecting portion and the second connecting portion respectively; wherein a plurality of nanoscale reflectors are formed on the first connecting portion, a plurality of nanoscale reflectors are formed on the second connecting portion, and shapes of nanoscale reflectors formed on the first connecting portion are different from shapes of nanoscale reflectors formed on the second connecting portion.

9. A semiconductor lighting module package, comprising: a lead frame having a carrier portion, a first connecting portion and a second connecting portion;a first semiconductor lighting element and a second semiconductor lighting element located on the carrier portion and electrically connected to the carrier portion and the first connecting portion and the second connecting portion respectively; andwherein a plurality of nanoscale reflectors are formed on the carrier portion, a plurality of nanoscale reflectors are formed on first connecting portion, and shapes of nanoscale reflectors formed on the carrier portion are different from shapes of nanoscale reflectors formed on the first connecting portion.

10. The semiconductor lighting module package of claim 9, wherein a plurality of nanoscale reflectors are formed on the second connecting portions.

11. The semiconductor lighting module package of claim 10, wherein shapes of the nanoscale reflectors formed on the second connecting portion are different from shapes of the nanoscale reflectors formed on the first connecting portion.

12. The semiconductor lighting module package of claim 10, wherein shapes of the nanoscale reflectors formed on the second connecting portion are different from shapes of the nanoscale reflectors formed on the carrier portion.