Claims
- 1. A method of switching the polarization of light penetrating a semiconductor magneto-optical material, comprising:irradiating the semiconductor magneto-optical material with a light in the presence of a magnetic field; wherein said semiconductor magneto-optical material comprises a semiconductor having dispersed therein fine magnetic compound particles selected from the group consisting of MnAs, MnGa, MnSb and MnAl.
- 2. The method of claim 1, wherein said semiconductor is a group IV semiconductor or a group III-V semiconductor.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-5628 |
Jan 1997 |
JP |
|
Parent Case Info
This application is a division of application Ser. No. 09/007,515 filed Jan. 15, 1998, now U.S. Pat. No. 6,132,524.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4921763 |
Karamon |
May 1990 |
A |
5657151 |
Swan |
Aug 1997 |
A |
5790299 |
Wilson et al. |
Aug 1998 |
A |
Non-Patent Literature Citations (1)
Entry |
J. De Boeck, et al. “Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy” Appl. Phys. Lett., vol. 68, No. 19, pp. 2744-2746, May 6, 1995. |