Claims
- 1. A method of fabricating a semiconductor memory device, comprising the steps of:
forming an element-isolating oxide film for defining an element region on a semiconductor substrate; forming a first interlayer insulating film on said element region and said element-isolating oxide film; forming a first contact hole in said first interlayer insulating film, said first contact hole extending over said element region and said element-isolating oxide film and reaching said semiconductor substrate; and filling said first contact hole with a first conductive film.
- 2. The method of fabricating a semiconductor memory device according to claim 1, further comprising the steps of:
forming a second interlayer insulating film on said first interlayer insulating film and said first conductive film; forming a second contact hole in said second interlayer insulating film, said second contact hole reaching said first conductive film above said element-isolating oxide film; and forming a wiring layer on said second interlayer insulating film, said wiring layer being connected to said first conductive film through said second contact hole.
- 3. The method of fabricating a semiconductor memory device according to claim 2, further comprising the steps of:
forming a third contact hole in said first interlayer insulating film at the same time of forming said first contact hole, said third contact hole reaching said semiconductor substrate on said element region; and filling said third contact hole with a second conductive film at the same time of filling said first contact hole with said first conductive film.
- 4. The method of fabricating a semiconductor memory device according to claim 3, further comprising the steps of:
forming a gate-insulating film on said element region between said first contact hole and said third contact hole; and forming a gate electrode extending on said gate-insulating film and said element-isolating oxide film; wherein said first contact hole and said third contact hole are formed in self-alignment with respect to said gate electrode.
- 5. The method of fabricating a semiconductor memory device according to claim 4, further comprising the steps of:
forming a third interlayer insulating film on said second interlayer insulating film and said wiring layer; forming a third, contact hole in self-alignment with respect to said wiring layer, said third contact hole reaching said second conductive film through said third interlayer insulating film and said second interlayer insulating film; and forming a first electrode connected to second conductive film through said third contact hole on said third interlayer insulating film.
- 6. The method of fabricating a semiconductor memory device according to claim 5, further comprising the steps of:
forming a capacitor insulating film on said first electrode; and forming a second electrode on said capacitor insulating film.
- 7. The method of fabricating a semiconductor memory device, comprising the steps of:
forming an element-isolating oxide film on a semiconductor substrate; forming a data transfer MOSFET having a gate electrode connected to a word line on an element region defined by said element-isolating oxide film; forming a first interlayer insulating film on said MOSFET and said element-isolating oxide film; forming a first contact hole and a second contact hole simultaneously in said first interlayer insulating film, said first contact hole extending on said element region and said element-isolating oxide film and reaching one of the source/drain diffusion layers of said MOSFET, said second contact hole reaching the other of said source/drain diffusion layers of said MOSFET on said element region; forming a first conductive plug filling said first contact hole; forming a second conductive plug filling said second contact hole; forming a second interlayer insulating film on said first interlayer insulating film, said first conductive plug and said second conductive plug; forming a bit line contact hole in said second interlayer insulating film, said bit line contact hole reaching said first conductive plug above said element-isolating oxide film; forming a third conductive plug filling said bit line contact hole; forming a bit line on said second interlayer insulating film and said third conductive plug; forming a third interlayer insulating film on said second interlayer insulating film and said bit line; forming a storage node contact hole reaching said second conductive plug through said third interlayer insulating film and said second interlayer insulating film; and forming a storage node contact having a storage node electrode, a capacitor insulating film and a plate electrode sequentially on said third interlayer insulating film and said storage node contact hole, thereby forming a capacitor.
- 8. The method of fabricating a semiconductor memory device according to claim 7, wherein said step of forming said first conductive plug and said second conductive plug includes depositing a conductive film over the whole surface of said semiconductor substrate and etching said conductive film by a chemical mechanical polishing process.
- 9. The method of fabricating a semiconductor memory device according to claim 8, further comprising the step of forming an insulating film on an upper surface and sidewalls of said gate electrode, said insulating film acting as a stopper against the chemical mechanical polishing process when said conductive film is etched by the chemical mechanical polishing process.
Priority Claims (2)
Number |
Date |
Country |
Kind |
7-185257 |
Jul 1995 |
JP |
|
7-262633 |
Oct 1995 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of U.S. Ser. No. 09/388,937, filed Sep. 2, 1999 which is a continuation of U.S. Ser. No. 08/684,059, filed Jul. 19, 1996 (now U.S. Pat. No. 5,977,583) which claims priority under 35 U.S.C. §119 to Japanese patent application Nos. 7-262633, filed Oct. 11, 1995 and 7-185257, filed Jul. 21, 1995. The entire disclosures of the prior applications are hereby incorporated by reference herein.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09388937 |
Sep 1999 |
US |
Child |
09909790 |
Jul 2001 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
08684059 |
Jul 1996 |
US |
Child |
09388937 |
Sep 1999 |
US |