Number | Date | Country | Kind |
---|---|---|---|
5-168090 | Jul 1993 | JPX | |
5-283346 | Nov 1993 | JPX |
This application is a continuation of application Ser. No. 08/253,435, filed Jun. 6, 1994, now abandoned.
Number | Name | Date | Kind |
---|---|---|---|
5037773 | Lee et al. | Aug 1991 | |
5110752 | Lu | May 1992 | |
5164337 | Ogawa et al. | Nov 1992 | |
5182232 | Chhabra et al. | Jan 1993 | |
5227651 | Kim et al. | Jul 1993 | |
5304828 | Kim et al. | Apr 1994 | |
5475248 | Takenaka | Dec 1995 | |
5491356 | Oennison et al. | Feb 1996 |
Number | Date | Country |
---|---|---|
41 36 420 | May 1992 | DEX |
42 29 837 | Mar 1993 | DEX |
59-61063 | Apr 1984 | JPX |
2-89869 | Mar 1990 | JPX |
3-252162 | Nov 1991 | JPX |
3-263370 | Nov 1991 | JPX |
3-266460 | Nov 1991 | JPX |
4-320370 | Nov 1992 | JPX |
4-368172 | Dec 1992 | JPX |
5-6974 | Jan 1993 | JPX |
5-36925 | Feb 1993 | JPX |
Entry |
---|
Solid State Technology, Jul., 1992, "Hemispherical Grain Silicon for High Density DRAMs". |
A New Cylindrical Capacitor Using Hemispherical Grained SI (HSG-SI) For 256MB DRAMS, H. Watanabe et al., IEEE Team Tech. Dig. 1992, pp. 10.1.1-10.1.4. |
A New Stacked Capacitor Structure Using Hemispherical-Grain (HSG) Poly-Silicon Electrodes, H. Watanabe et al., Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, Sendai 1990, pp. 873-876. |
High Temperature Process Limitation on TISI.sub.2, C.Y. Ting et al., J. Electrochem. Soc., Solid-State Science and Technology, Dec. 1986, pp. 2621-2625. |
Number | Date | Country | |
---|---|---|---|
Parent | 253435 | Jun 1994 |