Number | Date | Country | Kind |
---|---|---|---|
5-100301 | Apr 1993 | JPX |
Number | Name | Date | Kind |
---|---|---|---|
4905064 | Yabu | Feb 1990 | |
5216267 | Jin | Jun 1993 | |
5305256 | Tanigawa | Apr 1994 |
Entry |
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S. Sheffield Eaton et al., High-Speed DRAM Obtained By Abolition Of Boosting Voltage In Word Lines And Decrease Of Amplification Of Sense Amplifiers, pp. 84-88, Nikkei Microdevices, Jun. 1992. |