The present disclosure relates to a semiconductor package in which a semiconductor device is mountable, and a semiconductor apparatus including a semiconductor device mounted in the semiconductor package.
A known semiconductor package and a known semiconductor apparatus are described in, for example, Patent Literature 1.
In one embodiment of the present disclosure, a semiconductor package includes a body, a fixing member, and a bond joining the body and the fixing member. The body includes a base including a first upper surface and a frame located on the first upper surface and including an inner side surface, an outer side surface, and an opening portion extending through the frame in a first direction from the outer side surface to the inner side surface. The fixing member includes a first portion located in the opening portion, a second portion continuous with the first portion and located on the outer side surface of the first portion, and a through-hole extending through the first portion and the second portion in the first direction. The bond is located between the first portion and the opening portion. In a cross-sectional view taken along a plane intersecting with the first direction, the opening portion at least partially includes a first linear portion. The first portion includes a second linear portion facing the first linear portion. The bond has a smallest thickness between the first linear portion and the second linear portion in a cross-sectional view taken along a plane intersecting with the first direction.
In one embodiment of the present disclosure, a semiconductor apparatus includes the semiconductor package described above, and a semiconductor device mounted on the first upper surface.
The objects, features, and advantages of the present disclosure will become more apparent from the following detailed description and the drawings.
Recent small devices incorporate known small semiconductor packages for semiconductor devices such as ICs, light-emitting diodes, piezoelectric elements, or quartz oscillators. Other known semiconductor packages can contain optical semiconductor devices such as laser diodes or photodiodes.
Patent Literature 1 describes a semiconductor package that includes a fixing member and a body containing a mount on which an optical semiconductor device is mountable. The body has a through-hole in its side surface. The fixing member is placed in the through-hole and fixed with a bond. An optical component such as an optical fiber is welded to the fixing member using, for example, a laser.
With the technique described in Patent Literature 1, a portion of the fixing member, to which the optical fiber is fixed, is received in the through-hole in the side surface of the body. The received portion of the fixing member is circular, and the through-hole is also circular. The received portion of the fixing member is joined to the through-hole portion with a bond.
In such a semiconductor package, the circular portion of the fixing member is joined to the circular through-hole portion of the body with a bond without a reference plane. Thus, positioning the fixing member may be difficult, possibly causing misalignment in the optical axis. Structure of Semiconductor Package and Semiconductor Apparatus
Embodiments of the present disclosure will now be described by way of example with reference to the drawings. Although the semiconductor package and the semiconductor apparatus may have any of their faces being upward or downward, they are herein defined using the orthogonal xyz coordinate system with the positive z-direction being upward for ease of explanation. A first direction herein refers to, for example, y-direction in the drawings. A second direction refers to a direction orthogonal to the first direction in a plan view, and refers to, for example, x-direction in the drawings. A third direction refers to a direction orthogonal to the first direction and the second direction in a plan view, and refers to, for example, z-direction in the drawings.
A semiconductor package 1 and a semiconductor apparatus 10 including the semiconductor package 1 according to a first embodiment of the present disclosure will be described with reference to
As illustrated in
The semiconductor device 6 converts, for example, an optical signal to an electrical signal or an electrical signal to an optical signal. As illustrated in
Examples of the semiconductor device 6 include an optical semiconductor device such as a semiconductor laser diode (LD) or a photodiode (PD), a semiconductor integrated circuit, and a sensor device such as an optical sensor. The semiconductor device 6 may be made of, for example, a semiconductor material such as gallium arsenide or gallium nitride.
The semiconductor package 1 protects the semiconductor device 6 from the external environment. The semiconductor package 1 includes at least a body 2 that accommodates the semiconductor device 6, a fixing member 3 joined to the body 2, a bond 4 joining the body 2 and the fixing member 3, and an input-output terminal 5.
The body 2 includes a base 21 and a frame 22 as illustrated in
The semiconductor device 6 is mounted on the base 21 in the body 2. The base 21 is, for example, rectangular in a plan view, with the first upper surface 21a being a surface on which the semiconductor device 6 is mounted.
The base 21 dissipates heat generated by the semiconductor device 6 in the semiconductor package 1 out of the semiconductor package 1. The base 21 is rectangular in a plan view in the present embodiment, but may be in any other shape, such as polygonal or elliptical, on which the semiconductor device 6 is mountable. The base 21 may have a length of, for example, about 5 to 50 mm inclusive on each side in a plan view.
Examples of the material for the base 21 include a metal such as copper, iron, tungsten, molybdenum, nickel, or cobalt, and an alloy containing any of these metals. In this case, the base 21 may be a metal plate, or a stack of multiple metal plates. The base 21 made of any of the above metals may include its surface coated with a plating layer of, for example, nickel or gold using electroplating or electroless plating to reduce oxidative corrosion.
The base 21 made of any of the above metals may be obtained by processing an ingot of any of the above metals into a predetermined shape using metalworking such as rolling, punching, or cutting.
The main component of the base 21 may be, for example, a ceramic material such as sintered aluminum oxide, sintered mullite, sintered silicon carbide, sintered aluminum nitride, sintered silicon nitride, or glass ceramic. When the main component of the base 21 is the ceramic material, the first upper surface 21a of the base 21 may undergo wiring by sintering a metal paste containing a metal such as molybdenum or manganese to transmit a high frequency signal or wiring with a thin film deposition method such as vapor deposition or sputtering. The main component in the present disclosure refers to at least a component with the highest content, for example, 90% or more.
The first upper surface 21a of the base 21 may include a step (e.g., a submount) for mounting the semiconductor device 6. The step may be used to mount the semiconductor device 6.
The base 21 made of a ceramic material may include the step as its integral portion. When the step is integral with the base 21, as illustrated in
The frame 22 in the body 2 is located on the first upper surface 21a of the base 21 as illustrated in
Examples of the material for the frame 22 include a metal such as coper, iron, tungsten, molybdenum, nickel, or cobalt, and an alloy containing any of these metals. Other examples of the material for the frame 22 include an insulating material that may be, for example, a ceramic material such as sintered aluminum oxide, sintered mullite, sintered silicon carbide, sintered aluminum nitride, sintered silicon nitride, or glass ceramic.
The frame 22 may be joined to the base 21 with, for example, a brazing material. The brazing material may be, for example, silver, copper, gold, aluminum, or magnesium, and may contain additives such as nickel, cadmium, or phosphorus. The frame 22 and the base 21 made of the same material may be integral with each other. This eliminates the process of joining the base 21 and frame 22 using a bond.
The opening portion 22a of the frame 22 is open through the frame 22 in the first direction from the outer side surface 22b to the inner side surface 22c, as illustrated in
The opening portion 22a may be polygonal in a cross-sectional view taken along a plane intersecting with the first direction. As illustrated in
As illustrated in
Examples of the material for the fixing member 3 include a metal such as copper, iron, tungsten, molybdenum, nickel, or cobalt, and an alloy containing any of these metals. The fixing member 3 may be fabricated by, for example, processing an ingot obtained by solidifying a molten metal cast in a mold into a predetermined shape using metalworking such as rolling or punching. The predetermined shape is, as in the example in
The first portion 31 of the fixing member 3 is joined to the opening portion 22a of the frame 22 with a bond 4. As illustrated in
As illustrated in
As illustrated in
As illustrated in
In at least one of a cross-sectional view taken along a plane intersecting with the first direction or a cross-sectional view taken along a plane intersecting with the second direction, the fixing member 3 may include the first portion 31 partially flush with the second portion 32. For example, as in the embodiment described later, the first portion 31 may be partially flush with the second portion 32 in a cross-sectional view taken along a plane intersecting with the first direction, or the first portion 31 may be partially flush with the second portion 32 both in a cross-sectional view taken along a plane intersecting with the first direction and in a cross-sectional view taken along a plane intersecting with the second direction.
As illustrated in
As illustrated in
The second portion 32 of the fixing member 3 may have any shape as viewed laterally in the first direction. For example, the second portion 32 may be circular, as illustrated in
The through-hole 33 in the fixing member 3 may be circular, as illustrated in
The bond 4 is located between the opening portion 22a of the frame 22 and the first portion 31 of the fixing member 3 to join the opening portion 22a to the first portion 31. As illustrated in
In the present embodiment, as illustrated in
The bond 4 may be, for example, solder, a brazing material, glass, or a resin material. The brazing material may be, for example, a silver brazing material, which has high heat resistance and joint strength among other bonds.
As illustrated in
When the thickness D311 of the first portion 31 in the first direction is larger than the thickness D221 of the frame 22 in the first direction, the bond 4 may include a curved end portion 43 adjacent to the inner side surface 22c, as illustrated in
The input-output terminal 5 may be a stack of multiple layers including a first wiring layer 51 and a second wiring layer 52. The input-output terminal 5 is located on the outer side surface 22b of the frame 22 and separate from the opening portion 22a of the frame 22. For example, when the base 21 is rectangular in a plan view, the input-output terminal 5 may be located on a side of the outer side surface 22b of the frame 22 other than the side with the opening portion 22a. The first wiring layer 51 and the second wiring layer 52 transmit electrical signals between the semiconductor device 6 and an external circuit board. As illustrated in
Examples of the materials for the multiple layers in the input-output terminal 5 include insulating materials including ceramic materials such as sintered aluminum oxide, sintered mullite, sintered silicon carbide, sintered aluminum nitride, sintered silicon nitride, and sintered glass ceramic.
A method for fabricating the input-output terminal 5 will now be described. First, green sheets corresponding to the multiple layers in the input-output terminal 5 are prepared. Each green sheet is processed into a predetermined shape using a tool such as a laser, a punch, or a cutter to obtain multiple layers yet to be fired. The uncured multiple layers yet to be fired then undergo, for example, wiring by sintering a metal paste containing a metal such as molybdenum or manganese to transmit a high frequency signal or wiring with a thin film deposition method such as vapor deposition or sputtering. The first wiring layer 51 and the second wiring layer 52 are thus obtained. Subsequently, the multiple layers including the first wiring layer 51 and the second wiring layer 52 are press-joined and co-fired in a stacked state.
As illustrated in
The input-output terminal 5 may be joined to the frame 22 with a brazing material or may be integral with the frame 22.
Lead terminals may also be connected to the first wiring layer 51 in the input-output terminal 5. The lead terminals are members for electrical connection with, for example, an external electrical circuit board. The lead terminals may be connected to the first wiring layer 51 with a brazing material.
The seal ring 8 joins the frame 22 and the lid 7. As illustrated in
The lid 7 is located on the second upper surface 22d of the frame 22 and protects the semiconductor device 6 together with the frame 22. The lid 7 is joined to the frame 22 with the seal ring 8 located on the second upper surface 22d of the frame 22 to seal the semiconductor package 1, as illustrated in
Methods for manufacturing the semiconductor package 1 and the semiconductor apparatus 10 according to the first embodiment will now be described. The present disclosure is not limited to the embodiments described below.
(a) Multiple green sheets are prepared first. More specifically, for example, a ceramic powder such as a powder of boron nitride, aluminum nitride, silicon nitride, silicon carbide, or beryllium oxide is mixed with, for example, an organic binder, a plasticizer, or a solvent to obtain a mixture. The mixture is formed into layers as multiple green sheets. The multiple green sheets described above are then processed using, for example, a die to prepare multiple first green sheets in the outline shape of the base 21 in a plan view and multiple second green sheets in the outline shape of the frame 22 in a plan view, as illustrated in
When the input-output terminal 5 is integral with the frame 22, some of the second green sheets are formed into an outline shape combining the frame 22 and the input-output terminal 5. In this process, for example, vias may be formed in the multiple first green sheets and the multiple second green sheets using, for example, a die or a laser.
In the example described above, the material for the base 21 is the same ceramic material as for the frame 22. When either the base 21 or the frame 22 is made of a metal, an ingot obtained by casting and solidifying a molten metal in a mold is formed into a predetermined shape using, for example, metalworking.
(b) A high-melting-point metal powder, such as a tungsten or molybdenum powder, is prepared and is mixed with, for example, an organic binder, a plasticizer, or a solvent to prepare a metal paste. A predetermined pattern is then printed with the metal paste on each of the multiple first green sheets and the multiple second green sheets to form wiring. The metal paste may contain glass or a ceramic material to increase the joint strength with the body 2.
(c) The multiple first green sheets and the multiple second green sheets are stacked with their outer edges aligned to form a stack of green sheets. In some embodiments, the wiring may be formed by printing a predetermined pattern with the metal paste after forming the stack of green sheets.
(d) The stack of green sheets is fired to sinter the multiple first and second green sheets to obtain the body 2 including the base 21 and the frame 22 joined together. To obtain the input-output terminal 5 integral with the frame 22, the body 2 including the frame 22 also joined with the input-output terminal 5 is obtained. When either the material for the base 21 or the material for the frame 22 is a metal, the base 21 and the frame 22 are joined using, for example, a brazing material to obtain the body 2.
(e) The fixing member 3 formed in a predetermined shape using a metal is joined to the frame 22 with the bond 4 to obtain the semiconductor package 1. The semiconductor device 6 is then mounted on the first upper surface 21a of the base 21, and the lid 7 is joined to the second upper surface 22d of the frame 22 to obtain the semiconductor apparatus 10. As illustrated in
A semiconductor package 1 according to a second embodiment of the present disclosure will now be described with reference to
In the present embodiment, the components different from those in the first embodiment are described. As illustrated in
The third upper surface 31b being flush with the second upper surface 22d herein refers to the two surfaces being completely flush with each other and also to a structure with a manufacturing error in which the third upper surface 31b of the first portion 31 is located, for example, about 0.1 mm above the second upper surface 22d of the frame 22 in a cross-sectional view taken along a plane intersecting with the first direction, as illustrated in
The body 2 made of a ceramic material herein may contain, as its material, substances unavoidable in the manufacture other than the ceramic material.
The semiconductor package 1 according to the present embodiment may be fabricated by, for example, changing the number of layers of the second green sheets with a cutout in a portion of the outline shape of the frame 22 in a plan view with the manufacturing method described above.
The present disclosure is not limited to the first and second embodiments and the examples described above, and may be changed variously without departing from the spirit and scope of the present disclosure.
For example, the opening portion 22a may have a shape combining the first linear portion 22aa and a circular arc.
In the second embodiment, the fixing member 3 may include a holder 33a recessed or protruding in a cross-sectional view taken along a plane intersecting with the second direction.
The input-output terminal 5 may be stepped as viewed laterally in the second direction. In other words, the input-output terminal 5 may have a shape with two steps as viewed laterally in the second direction. In this case, the first wiring layer 51 may be located on the upper surface of the upper step, and the second wiring layer 52 may be located on the upper surface of the lower step. The second wiring layer 52 may extend in the first direction, the second direction, or both from the periphery of the frame 22 in a plan view, or the second wiring layer 52 may be a wiring layer that is different from the first wiring layer 51 described above and is exposed in a plan view.
In one or more embodiments of the present disclosure, the semiconductor package may be implemented in structures 1 to 18 described below.
(1) A semiconductor package, comprising:
(2) The semiconductor package according to (1), wherein
(3) The semiconductor package according to (1) or (2), wherein
(4) The semiconductor package according to any one of (1) to (3), wherein
(5) The semiconductor package according to any one of (1) to (4), wherein
(6) The semiconductor package according to (5), wherein
(7) The semiconductor package according to (5) or (6), wherein
(8) The semiconductor package according to any one of (5) to (7), wherein
(9) The semiconductor package according to any one of (5) to (8), wherein
(10) The semiconductor package according to any one of (1) to (9), wherein
(11) The semiconductor package according to (10), wherein
(12) The semiconductor package according to any one of (1) to (11), wherein
(13) The semiconductor package according to any one of (1) to (12), wherein
(14) The semiconductor package according to any one of (1) to (13), wherein
(15) The semiconductor package according to any one of (1) to (14), wherein
(16) The semiconductor package according to any one of (1) to (15), wherein
(17) The semiconductor package according to any one of (1) to (16), wherein
(18) The semiconductor package according to any one of (1) to (17), wherein
In one or more embodiments of the present disclosure, the semiconductor apparatus may be implemented in structure 19 described below.
(19) A semiconductor apparatus, comprising:
In one embodiment of the present disclosure, as described above, the semiconductor package has the thickness of the bond between the first linear portion and the second linear portion smaller than the thickness of the bond between other parts of the first portion and the opening portion to use the plane including the first linear portion and the plane including the second linear portion as reference planes. This facilitates positioning of the fixing member relative to the opening portion of the body. Thus, the semiconductor package and the semiconductor apparatus have less optical axis misalignment.
The present disclosure may be embodied in various forms without departing from the spirit or the main features of the present disclosure. The embodiments described above are thus merely illustrative in all respects. The scope of the present disclosure is defined not by the description given above but by the claims. Any variations and alterations contained in the claims fall within the scope of the present disclosure.
Number | Date | Country | Kind |
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2021-176646 | Oct 2021 | JP | national |
Filing Document | Filing Date | Country | Kind |
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PCT/JP2022/040205 | 10/27/2022 | WO |