SEMICONDUCTOR STORAGE DEVICE, PRINTING APPARATUS, AND WRITE CONTROL METHOD OF SEMICONDUCTOR STORAGE DEVICE

Information

  • Patent Application
  • 20230298994
  • Publication Number
    20230298994
  • Date Filed
    February 15, 2023
    2 years ago
  • Date Published
    September 21, 2023
    a year ago
Abstract
A semiconductor storage device controls writing in a memory unit including an anti-fuse element. The device includes a comparison unit configured to compare, with a reference voltage, a voltage generated across a resistor element connected in series with a power supply line used to energize the anti-fuse element, and a control unit configured to, in writing in the memory unit, control writing in the anti-fuse element of the memory unit based on an output of the comparison unit.
Description
Claims
  • 1. A semiconductor storage device configured to control writing in a memory unit including an anti-fuse element, the device comprising: a comparison unit configured to compare, with a reference voltage, a voltage generated across a resistor element connected in series with a power supply line used to energize the anti-fuse element; anda control unit configured to, in writing in the memory unit, control writing in the anti-fuse element of the memory unit based on an output of the comparison unit.
  • 2. The device according to claim 1, wherein the comparison unit includes an amplifier circuit configured to receive and amplify the voltage generated across the resistor element, anda comparator circuit configured to compare an output of the amplifier circuit with the reference voltage, andthe control unit determines, based on an output of the comparator circuit, whether writing in the anti-fuse element of the memory unit is complete.
  • 3. The device according to claim 1, further comprising a power supply control unit configured to, in writing in the memory unit, apply a write voltage to the power supply line used to energize the anti-fuse element.
  • 4. The device according to claim 1, wherein in writing in the memory unit, the control unit performs writing in the anti-fuse element by applying a pulse signal to the anti-fuse element.
  • 5. The device according to claim 4, wherein when the output of the comparison unit indicates that writing in the anti-fuse element of the memory unit is complete, the control unit terminates writing in the anti-fuse element after further applying the pulse signal to the anti-fuse element for a predetermined time.
  • 6. The device according to claim 1, wherein a current supply side of the power supply line is grounded via an ESD protection element.
  • 7. The device according to claim 1, wherein the memory unit includes the anti-fuse element,a first resistor element connected in parallel with the anti-fuse element, anda drive element configured to control energization of the anti-fuse element.
  • 8. The device according to claim 7, further comprising a third resistor element connected in series between the anti-fuse element and a second resistor element connected in series with the power supply line.
  • 9. A printing apparatus comprising a printhead including a plurality of discharge ports, anda printhead board,wherein the printhead board includes discharge elements provided so as to correspond to the plurality of discharge ports, and drive units electrically connected to the discharge elements,the apparatus includes a semiconductor storage device configured to control writing in a memory unit including an anti-fuse element, anda printing apparatus control unit configured to control data writing in the semiconductor storage device and data reading out from the semiconductor storage device, andthe semiconductor storage device includes a comparison unit configured to compare, with a reference voltage, a voltage generated across a resistor element connected in series with a power supply line used to energize the anti-fuse element, anda control unit configured to, in writing in the memory unit, control writing in the anti-fuse element of the memory unit based on an output of the comparison unit.
  • 10. The apparatus according to claim 9, wherein in writing in the memory unit, the printing apparatus control unit determines, based on an output of the comparison unit, whether writing in the anti-fuse element of the memory unit is complete.
  • 11. The apparatus according to claim 9, wherein a comparison unit of the semiconductor storage device is provided on the printhead board.
  • 12. The apparatus according to claim 9, wherein the comparison unit of the semiconductor storage device is provided on a board that electrically connects a signal and a power supply between the printhead board and a control board of the printing apparatus.
  • 13. A write control method of a semiconductor storage device configured to control writing in a memory unit including an anti-fuse element, the device including a comparison unit configured to compare, with a reference voltage, a voltage generated across a resistor element connected in series with a power supply line used to energize the anti-fuse element, the method comprising: selecting a write target anti-fuse element;energizing the selected anti-fuse element via the power supply line; andcontrolling writing in the anti-fuse element based on an output of the comparison unit configured to compare, with the reference voltage, a voltage generated, by the energizing, across the resistor element connected in series with the power supply line.
Priority Claims (1)
Number Date Country Kind
2022-042777 Mar 2022 JP national