Semiconductor store element and stores formed by matrices of such elements

Abstract

A novel semiconductor store element comprises a bistable pnpn structure of the kind described in the copending Patent application Ser. No. 527,918, addressed by a structure of the same type. The system has an area of the order of 10 to 20 square microns and possesses a high switching speed.In a copending U.S. Pat. application filed the under the Ser. No. 527,918 a novel electronic component which, under the effect of applied voltages, could acquire two stable states, one in which it is conductive and the other in which it is blocked, was disclosed.This component enables a large scale integration to be achieved and has a high switching speed.The invention relates to a store element which can acquire two stable states and comprises two components of the aforesaid kind, and load resistors.

Description

Claims

1. A semiconductor store element, having two stable states, one state in which it is conductive and the other in which it is blocked, comprising a first pnpn structure, a common region being the collector to a first transistor and comprising a zone of very small size constituting the base of the second transistor, the current flowing parallel to the substrate surface in one of the transistor and perpendicularly thereto in the other, a d.c bias source, two resistors connecting respectively said region and the collector of the second transistor to said bias source, a two-way gate making it possible, on the one hand to address said trigger stage and on the other hand to apply to it the write-in signals.

2. An element as claimed in claim 1, said gate being a second pnpn structure identical to said first structure, addressing being performed by the application of a word signal to the emitter of the second transistor thereof, said signal having a sufficient amplitude to drive the gate conductive, the write-in signals being applied to the emitter of the first transistor and the common base-collector region of said second component being connected to the corresponding region of the store element.

3. An element as claimed in claim 2, the two structures being integrated into one and the same substrate, the latter having the opposite conductivity type to that of the common base-collector regions of the two elements.

4. An element as claimed in claim 3, wherein substrate is of weakly-doped p-type material, the various elements of the two structures being implanted in the substrate.

5. An element as claimed in claim 3, wherein the resistors are saturable resistors integrated into said substrate.