Claims
- 1. A semiconductor substrate containing bulk micro-defects under the condition that the average density of bulk micro-defects of the substrate is within the range of 5.times.10.sup.2 to 5.times.10.sup.6 pieces per cm.sup.3 from a surface of the substrate to a depth of 10 .mu.m and a density of bulk micro-defects is above 5.times.10.sup.7 pieces per cm.sup.3 in the interior 20 .mu.m or deeper from the surface.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-033574 |
Feb 1993 |
JPX |
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Parent Case Info
This application is a Continuation of application Ser. No. 08/199,936, filed on Feb. 22, 1994, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (2)
Number |
Date |
Country |
55-96641 |
Jul 1980 |
JPX |
59-202640 |
Nov 1984 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Wolf et al. "Silicon Processing For VLSI Era," Lattice Press, Sunset Beach, Calif., 1986, pp. 30-33. |
Y. Matsushita, et al; "Improvement of Silicon Surface Quality by H.sub.2 Anneal"; Extended Abstract of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986; pp. 529-532. |
Continuations (1)
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Number |
Date |
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Parent |
199936 |
Feb 1994 |
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