SEMICONDUCTOR SUBSTRATE GRINDING APPARATUS

Abstract

An example semiconductor substrate polishing apparatus includes a polishing table, a wafer carrier, and a slurry supplier. The polishing table includes a polishing pad. The wafer carrier is disposed on the polishing table and is configured to attach a substrate. The slurry supplier is disposed on the polishing table and is configured to contain a slurry composition. The polishing pad includes a first polymer region defined by first polymers and a plurality of second polymer regions defined by second polymers, adjacent to each other, and arranged within the first polymer region.

Description

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit under 35 USC 119 (a) of Korean Patent Application No. 10-2024-0000201 filed on Jan. 2, 2024, in the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference.

BACKGROUND

In polishing a semiconductor substrate, there may be a problem in that the polishing pad may be glazed by residue and debris slurry generated during the process of polishing the substrate, reducing a lifespan of the polishing pad and reducing flatness of the substrate. Accordingly, in polishing the semiconductor substrates, methods to reduce a side effect in which the polishing pad is glazed are continuously being researched.

SUMMARY

The present disclosure relates to a semiconductor substrate polishing apparatus with a self-conditioning function, in order to prevent the polishing pad from being glazed by residue and slurry.

In some implementations, a semiconductor substrate polishing apparatus includes a polishing table including a polishing pad; a wafer carrier disposed on the polishing table and having a substrate attached thereto; and a slurry supply unit disposed on the polishing table and including a slurry composition, wherein the polishing pad includes a first polymer region defined by first polymers and a plurality of second polymer regions defined by second polymers, adjacent to each other, and arranged within the first polymer region.

In some implementations, a semiconductor substrate polishing apparatus includes a polishing table including a polishing pad having a hydrophobic region and a plurality of hydrophilic regions dispersed within the hydrophobic region; a wafer carrier disposed on the polishing table and having a substrate attached thereto; and a slurry supply unit disposed on the polishing table and including a slurry composition, wherein the polishing pad includes a block copolymer to which a plurality of blocks are chemically bonded, the plurality of blocks include a first polymer block and at least one second polymer block, different from the first polymer block, and the hydrophobic region is defined by the first polymer block, and the plurality of hydrophilic regions are defined by the at least one second polymer block.

In some implementations, a semiconductor substrate polishing apparatus includes a wafer carrier having a substrate attached thereto; a slurry supply unit including a slurry composition; and a polishing table disposed below the wafer carrier and the slurry supply unit, and including a polishing pad having a first direction and a second direction, intersecting the first direction, in view of cross-section, wherein the polishing pad includes a surface contacting the slurry composition, voids adjacent to the surface, and a plurality of hydrophilic polymer regions positioned farther from the surface than the voids and defined by hydrophilic polymers, and the plurality of hydrophilic polymer regions are arranged in the first direction and arranged in the second direction, and the voids are arranged in at least one direction of the first direction or the second direction on the surface.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of the present disclosure will be more clearly understood from the following detailed description, taken in conjunction with the accompanying drawings.

FIG. 1 is a cross-sectional view schematically illustrating an example of a semiconductor substrate polishing apparatus.

FIG. 2 is a schematic partially enlarged view of an example of a semiconductor substrate polishing apparatus.

FIG. 3 is a schematic partially enlarged view of an example of a semiconductor substrate polishing apparatus.

FIGS. 4A, 4B, 4C, and 4D are schematic partially enlarged views of an example of a semiconductor substrate polishing apparatus.

FIG. 5 is a schematic partially enlarged view of an example of a semiconductor substrate polishing apparatus.

FIGS. 6A, 6B, and 6C are schematic partially enlarged views of an example of a semiconductor substrate polishing apparatus.

FIG. 7 is a schematic partially enlarged view of an example of a semiconductor substrate polishing apparatus.

FIG. 8 is a schematic partially enlarged view of an example of a semiconductor substrate polishing apparatus.

DETAILED DESCRIPTION

Hereinafter, example implementations of the present disclosure will be described with reference to the attached drawings.

FIG. 1 is a cross-sectional view schematically illustrating an example of a semiconductor substrate polishing apparatus 100. FIG. 2 is a schematic partially enlarged view of an example of the semiconductor substrate polishing apparatus 100, and is an example enlarged view of region ‘A’ in FIG. 1. FIG. 3 is a schematic partially enlarged view of an example of the semiconductor substrate polishing apparatus 100, and is an example enlarged view of region ‘B’ in FIG. 2. FIG. 4A is a schematic partially enlarged view of an example of a semiconductor substrate polishing apparatus 100A, and is an example enlarged view of region ‘C’ in of FIG. 3.

Referring to FIGS. 1 and 2, the semiconductor substrate polishing apparatus 100 may include a polishing table 10 including a polishing pad 11, a wafer carrier 20 having a substrate W attached thereto, a slurry supply unit 30, and a conditioning disk 40. Here, polishing may be a chemical mechanical polishing (CMP) process among the semiconductor manufacturing processes.

The wafer carrier 20 may be prepared on the polishing table 10. The wafer carrier 20 may include a membrane 21, a retaining ring 23, and a head 25. The head 25 may include a pressure regulator performing a pumping operation when performing a polishing process. The membrane 21 may be configured to press the substrate W by pumping the pressure regulator, and the retaining ring 23 may be configured to prevent the substrate W from being separated from the membrane 21 during the process of polishing the substrate W. The head 25 may be connected to a rotation shaft 27. During the polishing process, the rotation shaft 27 may rotate in a first direction (e.g., counterclockwise), and accordingly, the substrate W may also rotate in the same direction as the rotation shaft 27.

The substrate W may be a semiconductor wafer for manufacturing a predetermined semiconductor device. A predetermined film G may be formed on one surface of the substrate W. The film G (hereinafter referred to as a ‘film to be polished’) may be a layer to be polished in the semiconductor substrate polishing apparatus 100 according to the present disclosure.

The film to be polished G may be an inorganic film including an insulating film or a metal film. The insulating film may be a film containing an insulating nitride or an insulating oxide. The film containing the insulating nitride may be, for example, a nitride film containing silicon nitride (SiN), and the film containing the insulating oxide may be, for example, an oxide film containing silicon oxide (SiO₂). For example, the metal film may be a metal film containing a metal such as copper (Cu) or tungsten (W).

The type of films to be polished G may vary depending on the semiconductor process. For example, in the case of an interlayer dielectric (ILD) process, a shallow trench isolation (STI) process, and the like, the insulating film may be a film to be polished G. Meanwhile, in the case of a tungsten wiring process, or the like, the metal film may be a film to be polished G. For example, when one surface of the substrate W is patterned with an intaglio to form a groove portion locally, an insulating film may be deposited on the one surface, and a metal film is deposited on the insulating film so that the groove portion is completely filled, the metal film may be a film to be polished G.

The film to be polished G may be an organic film. The organic film may be a carbon-containing film containing carbon. The organic film may be a layer including carbon-hydrogen bonds or carbon-hydrogen-oxygen bonds. The organic film may include, for example, a carbon-spin on hardmask (C—SOH) film, an amorphous carbon layer (ACL), and NCP. Here, the carbon-spin on hardmask (C—SOH) may collectively refer to a carbon-based film having a resist function such as a gap-filling etching prevention film filling via holes of an inorganic film such as a silica film deposited on the patterned wafer.

In some implementations, the film to be polished G may be a plurality of films in which an inorganic film and an organic film are sequentially stacked on one surface of the substrate W. In this case, the film to be polished G may be the organic film. For example, when one surface of the substrate W is patterned in an intaglio to locally form a groove portion, an inorganic film is deposited on the one surface, and an organic film is applied on the inorganic film so that the groove portion is completely filled, the organic film may be a film to be polished G.

In order to perform a polishing process, one surface of the substrate W on which the polishing film G is formed may be prepared to face the polishing pad 11 by the wafer carrier 20.

The slurry supply unit 30 may be prepared on the polishing table 10. The slurry supply unit 30 may be configured to supply the slurry composition S onto the polishing pad 11 in order to polish the substrate W. Specifically, the slurry composition S may be a composition for polishing the film to be polished G of the substrate W.

The slurry composition S may include an abrasive performing a physical polishing action and an active ingredient performing a chemical polishing action, such as an oxidizing agent.

The oxidizing agent may be a composition for oxidizing the film to be polished G to form an oxide film on a surface thereof. The oxidizing agent may include a strong oxidizing agent. The oxidizing agent may be, for example, at least one selected from the group consisting of hydrogen peroxide, percarbonate, persulfate, and perchlorate, but the present disclosure is not limited thereto.

The abrasive may be a composition for mechanically polishing the oxide film formed on the surface of the film to be polished G by the oxidizing agent. The abrasive may be at least one selected from the group consisting of silica (SiO2), ceria (CeO2), alumina (Al2O3), and titanium oxide (TiO2), and may be selectively used depending on an object to be polished.

The slurry composition S may further include a polishing accelerator and/or a polishing inhibitor.

The polishing accelerator may be a composition in which the polishing agent polishes the film to be polished G at a high polishing amount per unit time. The polishing accelerator may be present in a dispersed state in the slurry composition S.

The polishing accelerator may be selected from the group consisting of an anionic material and a cationic material. The anionic material may include at least one of, for example, oxaric acid, citric acid, polysulfonic acid, polyacrylic acid, polymethacrylic acid (Darvan C—N), and copolymer acids or salts thereof, but the present disclosure is not limited thereto.

The polishing accelerator may further include a non-ionic material. The non-ionic material may include polymer containing units. The non-ionic material may include at least one of, for example, polypropylene glycol-polyethylene glycol-polypropylene glycol copolymer (PEP: polypropyleneglycol-b-polyethyleneglycol-b-polypropyleneglycol), polysorbates, octoxynol, polyethyleneglycol, octadecyl ether, nonylphenol ethoxylate, ethylene oxide, glycolic acid, and glycerol ethoxylate, but the present disclosure is not limited thereto.

The polishing inhibitor may be a composition for preventing the slurry composition S from unnecessarily polishing films other than the film to be polished G during the polishing process. For example, the polishing inhibitor may be a composition having polishing selectivity with respect to the film to be polished G.

The polishing inhibitor may vary depending on the material contained in the film other than the film to be polished G. For example, when the film other than the film to be polished G is an insulating film, the polishing inhibitor may include at least one of polyacryl acid, polyacryl acetate, polyacrylamide, polymethacrylamide, polyalkyleneimine, aminoalcohol, ethylenediamine (EDA), diethylenetriamine (DETA), and polyethyleneimine.

The conditioning disk 40 may be a disk which is introduced to face the polishing pad 11 and conditions a surface of the polishing pad 11. The conditioning disk 40 may include a circular disk body 41 and a predetermined cutting tip pattern 43 attached to one surface of the disk body 41 to condition the surface of the polishing pad 11. For example, the cutting tip pattern 43 may efficiently remove debris generated during the polishing process and remain on the surface and the groove portion of the polishing pad 11 and discharge materials such as sludge, or the like. The cutting tip pattern 43 may include diamond.

The polishing table 10 may include a polishing pad 11 on which a semiconductor substrate is polished. The polishing pad 11 may be a pad on which the film to be polished G of the substrate W attached by the wafer carrier 20 is polished.

The polishing pad 11 may include a top pad 11a and a sub pad 11b.

The top pad 11a may be located above the polishing pad 11, and may include a plurality of groove portions. The top pad 11a may be a portion contacting one surface of the substrate W and being directly involved in the polishing process. Accordingly, the top pad 11a may be formed of a hard material with excellent abrasion resistance and chemical resistance. For example, the top pad 11a may include a first polymer P1 including polyurethane, but the present disclosure is not limited thereto. The sub pad 11b may be located below the top pad 11a and may be formed of a material relatively softer than the top pad 11a, but the present disclosure is not limited thereto.

Referring to FIGS. 3 and 4A together, the top pad 11a of the polishing pad 11 of the semiconductor substrate polishing apparatuses 100 and 100A may further include a second polymer P2, different from the first polymer P1. In this case, the top pad 11a may include a first region R1 (or ‘first polymer region’) defined by the first polymer P1 and a plurality of second regions R2 (or ‘second polymer region’) define by the second polymer P2. The first polymer P1 may be defined as a molecule in which a first structural unit is a long chain with regular repeating units, and the number of repeating units of the first structural unit within the first polymer P1 may be defined as a first degree of polymerization DP1. Likewise, the second polymer P2 may be defined as a molecule in which a second structural unit consists of a long chain with regular repeating units, and the number of repeating units of the second structural unit within the second polymer P2 may be defined as a second degree of polymerization DP2.

In some implementations, the top pad 11a may include diblock copolymer DBP. The diblock copolymer DBP may include a first block B1 including a first polymer P1 and a second block B2 chemically bonded to the first block B1 and including a second polymer P2. The first block B1 may be referred to as a first polymer block mainly comprising the first structural unit, and the second block B2 may be referred to as a second polymer block mainly comprising the second structural unit.

The first polymer P1 may be a material allowing the top pad 11a to have excellent abrasion resistance and chemical resistance. For example, the first polymer P1 may include polyurethane, but the present disclosure is not limited thereto.

The second polymer P2 may include a hydrophilic polymer that can be partially dissolved by the slurry composition S. The second polymer P2 may be selected from the group consisting of, for example, polyvinyl alcohol (PVA), polyvinyl pyrrolidone (PVP), polyacryl amide (PAM), polyacrylic acid (PAA), and polyethylene glycol (PEG). While the film to be polished G of the substrate W is polished by the polishing pad 11, residue and debris slurry E may be formed and attached to a surface of the polishing pad 11. When the second polymer P2 includes a hydrophilic polymer, the second polymer P2 may perform conditioning of the polishing pad 11. Specifically, the second polymer P2 containing a hydrophilic polymer may be dissolved by the water-soluble slurry composition S and released (or removed from the second polymer region R2. Accordingly, the residue and debris slurry E attached to the surface of the polishing pad 11 may be detached from the surface by physical or chemical bonding with the second polymer P2.

For example, the second block B2 among blocks B1 and B2 of the diblock copolymer DBP may form a second region R2 that can be defined as a spherical micro domain, and the second region R2 may be dispersed or disposed to have a regular morphology throughout the polishing pad 11. For example, in view of cross-section, the second region R2 may be arranged in a first direction D1 and be arranged to be spaced apart in a second direction D2, intersecting the first direction D1. Referring to FIG. 3, the first direction D1 and the second direction D2 are shown to form an acute angle, but the present disclosure is not limited thereto. For example, the first direction D1 and the second direction D2 may be defined to intersect at a right angle or an obtuse angle.

In view of improving the uniformity and regularity of the morphology of the diblock copolymer DBP in the polishing pad 11, a ratio (DP1:DP2) of the first degree of polymerization DP1 of the first structural unit in the first block B1 and the second degree of polymerization DP2 of the second structural unit in the second block B2 may be in a range of 9:1 to 7:3. The ratio (DP1:DP2) may be in a range of, for example, 9:1 to 7.5:2.5, or 8.5:1.5 to 7.5:2.5, or 8.5:1.5 to 8:2.

In view of improving the uniformity and regularity of the morphology of the diblock copolymer (DBP) within the polishing pad 11, a number average molecular weight (Mn) of the diblock copolymer (DBP) may be in a range of 3,000 to 150,000. The number average molecular weight may be in a range of 5,000 to 100,000, or 5,000 to 50,000, or 6,000 to 30,000, or 7,000 to 20,000.

In view of improving the uniformity and regularity of the morphology of the diblock copolymer (DBP) within the polishing pad 11, a molecular weight distribution (poly dipersity index, PDI) of the diblock copolymer (DBP) may be in a range of 1.0 to 1.1. For example, the molecular weight distribution may be in a range of 1.0 to 1.05, or from 1.02 to 1.03. A method for manufacturing the diblock copolymer DBP is not particularly limited as long as it can copolymerize a first block B1 and a second block B2. For example, copolymerization of the first block B1 and the second block B2 may be performed by living anionic polymerization, living cationic polymerization, living radical polymerization, or coordination polymerization using an organometallic catalyst. The diblock copolymer DBP may be manufactured by living anionic polymerization with relatively few polymerization side reactions.

According to living anionic polymerization, first, a first polymer block B1 may be polymerized by polymerizing the first structural units. Thereafter, polymerization of the second structural unit may be initiated using an active site at the end of the first polymer block B1. Thereby, a second polymer block BP2 connected to the first polymer block BP1 may be formed, and thus, the diblock copolymer DBP may be formed.

For example, first structural units having a urethane bond may be formed by reacting polyfunctional alcohol and polyfunctional isocyanate. Here, the polyfunctional alcohol may be selected from the group consisting of polyether polyol and polyester polyol, and the polyfunctional isocyanate may be selected from the group consisting of MDI (Methylene Diphenyl diisocyanate) and TDI (Toluene Diisocyanate), but the present disclosure is not limited thereto.

Thereafter, the first structural units may be polymerized through living anionic polymerization to form a polyurethane prepolymer. One end or both ends of the polyurethane prepolymer may have an NCO functional group derived from the polyfunctional isocyanate as an active site.

Subsequently, polymerization of the second structural unit may be initiated using the active site at one end of the polyurethane block. Here, the second structural unit may be selected from the group consisting of vinyl alcohol, vinyl pyrrolidone, acrylamide, acrylic acid, and ethylene glycol. Depending on the type of the second structural unit, various diblock copolymers DBPs can be formed.

Finally, the diblock copolymer DBP may include a copolymer including polyurethane as one block. The diblock copolymer DBP may include, for example, a polyurethane-polyvinyl alcohol copolymer, a polyurethane-polyvinylpyrrolidone copolymer, a polyurethane-polyacrylamide copolymer, a polyurethane-polyacrylic acid copolymer, and a polyurethane-polyethylene glycol copolymer.

The polishing pad 11 may have a void P. Specifically, the polishing pad 11 may have a void P limited to a surface in contact with the slurry composition S (or ‘slurry contact portion L1’). The void P may be formed by the second polymer P2 being released from at least a portion of the second polymer regions P2. For example, the void P may be formed by a such a manner that the second polymer P2 present in regions located in the slurry contact portion L1 of the polishing pad 11 among the plurality of second polymer regions R2, is dissolved by the slurry composition S and released or removed from the regions.

Accordingly, the void P may be arranged in the same pattern as the pattern in which the second polymer regions P2 are arranged in the slurry contact portion L1. For example, the void P may be arranged in the first direction D1 or the second direction D2.

The polishing pad 11 may not have a void in a portion L2, other than the slurry contact portion L1. In other words, the polishing pad 11 may have a void limited to the slurry contact portion L1, so that the polishing pad 11 may maintain hardness above a certain level, and accordingly, an effect of removing the step of the film to be polished G of the substrate W may be increased.

The polishing table 10 may further include a rotation plate 13 disposed below the polishing pad 11 and connected to a rotation shaft 17. During the polishing process, the rotation shaft 17 may rotate in a second direction (e.g., clockwise), and accordingly, the rotation plate 13 and the polishing pad 11 may also rotate in the same direction in which the rotation shaft 17 rotates.

Referring to FIG. 4B, the semiconductor substrate polishing apparatus 100B may have the same or similar characteristics as those described with reference to FIGS. 1 to 4A, except that the polishing pad 11 includes a triblock copolymer TBP1.

Referring to FIG. 4B, the triblock copolymer TBP1 may include a plurality of blocks B1, B2, and B3. For example, the triblock copolymer TBP1 may include a first block B1 including a first polymer P1, a second block B2 chemically bonded to one end of the first block B1 and a second polymer P2, and a third block B3 chemically bonded to the other end of the first block B1 and including a second polymer P2. In the third block B3 of this implementation, the number of repeating units of the second structural unit in the second polymer P2 may be defined as a third degree of polymerization DP3.

As described with reference to FIGS. 1 to 4A, the first polymer P1 may include a material allowing the top pad 11a of the polishing pad 11 to have excellent abrasion resistance and chemical resistance, and the second polymer P2 may include a hydrophilic polymer which is partially dissolved by the slurry composition S and which may serve to perform conditioning. Each of the first and second polymers P1 and P2 of FIG. 4B may include the same or similar materials as each of the first and second polymers P1 and P2 described with reference to FIGS. 1 to 4A, so a detailed description thereof will be omitted.

The triblock copolymer TBP1 can also be formed by living anionic polymerization.

For example, first structural units having a urethane bond may be formed by reacting polyfunctional alcohol and polyfunctional isocyanate. Here, since the polyfunctional alcohol and polyfunctional isocyanate may include the same or similar materials as those described with reference to FIG. 4A, a detailed description thereof will be omitted.

Thereafter, the first structural units may be polymerized through living anionic polymerization to form a polyurethane prepolymer. Each of both ends of the polyurethane prepolymer may have an NCO functional group derived from the polyfunctional isocyanate as an active site.

Subsequently, polymerization of a second structural unit may be initiated using the active sites at both ends of the polyurethane block. Here, since the second structural unit may also include the same or similar material as described with reference to FIG. 4A, a detailed description thereof will be omitted. Depending on the type of the second structural unit, various triblock copolymers TBP1 can be formed.

Finally, the triblock copolymer TBP1 may include a copolymer including polyurethane as one block. The triblock copolymer TBP1 may include, for example, a polyvinyl alcohol-polyurethane-polyvinyl alcohol copolymer, a polyvinylpyrrolidone-polyurethane-polyvinylpyrrolidone copolymer, a polyacrylamide-polyurethane-polyacrylamide copolymer, a polyacrylic acid-polyurethane-polyacrylic acid copolymer, and a polyethylene glycol-polyurethane-polyethylene glycol copolymer.

In view of improving the uniformity and regularity of the morphology of the triblock copolymer TBP1 within the polishing pad 11, a ratio (DP1:DP2:DP3) of the first degree of polymerization DP1 of the first structural unit in the first block B1, the second degree of polymerization DP2 of the second structural unit in the second block B2, and the third degree of polymerization DP3 of the third structural unit in the third block B3 may be in a range of 1:8:1 to 2:6:2. The ratio (DP1:DP2:DP3) may be in a range of, for example, 1:8:1 to 1.5:7:1.5, or 1.2:7.6:1.2 to 1.4:7.2:1.4.

In view of improving the uniformity and regularity of the morphology of the triblock copolymer TBP1 within the polishing pad 11, a number average molecular weight (Mn) of the triblock copolymer TBP1 may be in a range of 3,000 to 150,000. The number average molecular weight may be in a range of 5,000 to 100,000, or 5,000 to 50,000, or 6,000 to 30,000, or 7,000 to 20,000.

In view of improving the uniformity and regularity of the morphology of the triblock copolymer TBP1 within the polishing pad 11, the molecular weight distribution (poly dipersity index, PDI) of the triblock copolymer TBP1 may be in a range of 1.0 to 1.1. For example, the molecular weight distribution may be in a range of 1.0 to 1.05, or from 1.02 to 1.03.

According to this implementation, the polishing pad 11 may maintain a higher degree of hardness in portion L2, other than the slurry contact portion L1, so an effect of eliminating a step difference of the film to be polished G of the substrate W may be further increased.

Referring to FIG. 4C, the semiconductor substrate polishing apparatus 100C may have the same or similar characteristics as those described with reference to 3, except that the polishing pad 11 has a first polymer P1 and a second polymer P2, different from each other, which are immiscibly blended.

Referring to FIG. 4C, the polishing pad 11 of the semiconductor substrate polishing apparatus 100C may include a first polymer P1 and a second polymer P2 which are immiscibly blended without being chemically bonded to each other.

Accordingly, the first polymer P1 and the second polymer P2 may cause phase separation, and accordingly, the polishing pad 11 may form a first region R1 in which the first polymer R1 is aggregated, and a second region R2 separated from the first region R1 and in which the second polymer R2 is aggregated.

In this implementation, for the phase separation, the first polymer P1 may include a hydrophobic polymer and the second polymer P2 may include a hydrophilic polymer. For example, the first polymer P1 may include polyurethane, and the second polymer P2 may be selected from the group consisting of polyvinyl alcohol (PVA), polyvinyl pyrrolidone (PVP), polyacryl amide (PAM), polyacrylic acid (PAA), and polyethylene glycol (PEG).

In this implementation, the polishing pad 11 may be provided such that a weight % of the first polymer P1 is greater than the weight % of the second polymer P2 based on the weight of the polishing pad 11. The weight % of the first polymer P1 may range from, for example, 80 weight % to 95 weight %, 85 weight % to 95 weight %, or 90 weight % to 95 weight %. In contrast, the weight % of the second polymer P2 may range, for example, from 5 weight % to 20 weight %, from 5 weight % to 15 weight %, or from 5 weight % to 10 weight %. In order to maximize the phase separation, it is preferable that the difference between the weight % of the first polymer P1 and the weight % of the second polymer P2 be larger.

Referring to FIG. 4D, the semiconductor substrate polishing apparatus 100D may have the same or similar characteristics as those described with reference to FIGS. 1 to 3, except that the polishing pad 11 further includes a hydrophilic material M1.

Referring to FIG. 4D, the polishing pad 11 may further include a hydrophilic material M1 in at least a portion of the second polymer regions R2. The hydrophilic material M1 may include a hydrophilic single molecule containing at least one hydrophilic functional group selected from the group consisting of a hydroxyl group, an amine group, and/or a carboxyl group. For example, the hydrophilic single molecule may be selected from the group consisting of vinyl alcohol, vinyl pyrrolidone, acrylamide, acrylic acid, and ethylene glycol, but the present disclosure is not limited thereto.

The hydrophilic material M1 may be physically mixed with the second polymer P2 in at least a portion of the second polymer regions R2. In other words, the hydrophilic material M1 may not chemically bond with the second polymer P2 (or a second structural unit). When the hydrophilic material M1 is a hydrophilic single molecule, the hydrophilic material M1 may be a different material from the second structural unit.

According to this implementation, the polishing pad 11 may further include a hydrophilic material M1 in at least a portion of the second polymer regions R2, so that the second polymer R2 may be more effectively dissolved in the slurry composition S. Accordingly, the conditioning effect of the second polymer P2 may be increased.

FIG. 5 is a schematic partially enlarged view of an example of a semiconductor substrate polishing apparatus 200, and is an example partially enlarged view of region ‘B’ of FIG. 1. FIG. 6A is a schematic partially enlarged view of an example of a semiconductor substrate polishing apparatus 200A, and is an example partially enlarged view of region ‘C’ of FIG. 5.

Referring to FIGS. 5 and 6A, the semiconductor substrate polishing apparatus 200A may be the same or similar to that described with reference to FIGS. 1 to 4C, except that the polishing pad 11 of the semiconductor substrate polishing apparatus 200A further comprises a third polymer P3, different from the first and second polymers P1 and P2 as one component.

Referring to FIGS. 5 and 6A, the polishing pad 11 of the semiconductor substrate polishing apparatus 200A may include a triblock copolymer TBP2 having a plurality of blocks B1, B2, and B3. The triblock copolymer TBP2 may include, for example, a first block B1 including a first polymer P1, a second block B2 including a second polymer P2 connected to one end of the first block B2 and including a second polymer P2, different from the first polymer P1, and a third block B2 connected to the other end of the first block B1 and including a third polymer P3, different from the first and second polymers P1 and P2.

As described with reference to FIGS. 1 to 4C, the first polymer P1 may include a material allowing the top pad 11a of the polishing pad 11 to have excellent abrasion resistance and chemical resistance.

The second and third polymers P2 and P3 may include hydrophilic polymers that are dissolved by a slurry composition S. Here, one of the second and third polymers P2 and P3 may be a material which is dissolved by the slurry composition S and performing conditioning, and the remaining polymer thereof may be a material which is dissolved by the slurry composition S and performing to function as a polishing accelerator or a polishing inhibitor.

For example, the second polymer P2 may include a material which is dissolved by the slurry composition S to perform conditioning, and the second polymer P2 may be selected from the group consisting of polyvinyl alcohol (PVA) and polyvinyl pyrrolidone (PVP).

For example, the third polymer (P3) may include a material which is dissolved by the slurry composition S and functions as a polishing accelerator or polishing inhibitor, and the third polymer P3 may be selected from the group consisting of polyacrylamide amide (PAM), polyacrylic acid (PAA), and polyethylene glycol (PEG).

According to this implementation, as the second and third polymers P2 and P3 include a hydrophilic polymer but include different materials, the second and third polymers P2 and P3 may be dissolved by the slurry composition S and perform different roles.

Since a manufacturing method of the triblock copolymer TBP2 according to this implementation may be the same or similar to the manufacturing method of the triblock copolymer TBP1 described with reference to FIG. 4B, a detailed description thereof will be omitted.

The triblock copolymer TBP2 according to this implementation can also self-organize a structure in which spherical, cylindrical, or lamellar microdomains are regularly arranged through micro phase separation.

For example, each of the second and third blocks B2 and B3 among the blocks B1, B2, and B3 of the triblock copolymer TBP2 may form a plurality of second and third regions R2 and R3, respectively, which can be defined as spherical microdomains, and the second and third regions R2 and R3 may be disposed to have a regular morphology throughout the polishing pad 11. For example, the plurality of third regions R3 may be arranged in a hexagonal packed pattern in which six adjacent second regions R2 are arranged at vertices of a regular hexagon, but the present disclosure is not limited thereto.

In view of improving the uniformity and regularity of the morphology of the triblock copolymer TBP2 within the polishing pad 11, a ratio (DP1:DP2:DP3) of a first degree of polymerization DP1 of a first structural unit in the first block B1, a second degree of polymerization DP2 of a second structural unit in the second block B2, and a third degree of polymerization DP3 of a third structural unit in the third block B3 may be in a range of 1:8:1 to 2:6:2. The ratio (DP1:DP2:DP3) may have a range of, for example, 1:8:1 to 1.5:7:1.5, or 1.2:7.6:1.2 to 1.4:7.2:1.4.

In view of improving the uniformity and regularity of the morphology of the triblock copolymer TBP2 within the polishing pad 11, a number average molecular weight (Mn) of the triblock copolymer TBP2 may have a range of 3,000 to 150,000. The number average molecular weight may have a range of 5,000 to 100,000, or 5,000 to 50,000, or 6,000 to 30,000, or 7,000 to 20,000.

In view of improving the uniformity and regularity of the morphology of the triblock copolymer TBP2 within the polishing pad 11, a molecular weight distribution (poly dipersity index, PDI) of the triblock copolymer (TBP2) may have a range of 1.0 to 1.1. For example, the molecular weight distribution (poly dipersity index, PDI) may have a range of 1.0 to 1.05, or from 1.02 to 1.03.

Referring to FIG. 6B, the semiconductor substrate polishing apparatus 200B may have the same or similar features as those described with reference to FIGS. 1 to 6A, except that the semiconductor substrate polishing apparatus 200B has a polishing pad 11 in which different first polymers P1, second polymers P2, and third polymers P3 are immiscibly blended.

Referring to FIG. 6B, the polishing pad 11 of the semiconductor substrate polishing apparatus 200B may include a first polymer P1, a second polymer P2, and a third polymer P3, which are not chemically bonded to each other and are immiscibly blended. Accordingly, the first polymer P1, the second polymer P2, and the third polymer P3 may cause phase separation, and accordingly, the polishing pad 11 may include a first region R1 in which the first polymer P1 is aggregated, a second region R2 which is separated from the first region R1 and in which the second polymer P2 is aggregated, and a third region R3 which is separated from the first region R1 and the second region R2 and in which the third polymer P3 is aggregated.

In this implementation, for the phase separation, the first polymer P1 may include a hydrophobic polymer, and the second and third polymers P2 and P3 may include different polymers. For example, the first polymer P1 may include polyurethane, and the second polymer P2 may be selected from the group consisting of polyvinyl alcohol (PVA) and polyvinyl pyrrolidone (PVP), and the third polymer P3 may be selected from the group consisting of polyacryl amide (PAM), polyacrylic acid (PAA), and polyethylene glycol (PEG).

In this implementation, the polishing pad 11 may be provided so that a weight % of the first polymer P1 is greater than a weight % of the second and third polymers P2 and P3 based on the weight of the polishing pad 11. The weight % of the first polymer P1 may be in a range of, for example, 80 weight % to 95 weight %, 85 weight % to 95 weight %, or 90 weight % to 95 weight %. In contrast, a weight % of the second polymer P2 may be in a range of, for example, 5% to 10% by weight, or from 5% to 8% by weight, and the weight % of the third polymer P3 may be in a range of, for example, 5% to 10% by weight. For example, it may range from 5% to 10% by weight, or from 5% to 8% by weight. In order to maximize the phase separation, it is preferable that the difference between the weight % of the first polymer P1 and the weight % of the second and third polymers P2 and P3 be larger.

Referring to FIG. 6C, the semiconductor substrate polishing apparatus 200C may have the same or similar features as those described with reference to FIGS. 1 to 6B, except that the polishing pad 11 further includes a hydrophilic material M1.

Referring to FIG. 6C, the polishing pad 11 may further include a hydrophilic material M1 in at least a portion of the second polymer regions R2 and at least a portion of the third polymer regions R3. Since the hydrophilic material M1 may include the same or similar material as described with reference to FIG. 4D, a detailed description thereof will be omitted.

The hydrophilic material M1 may be physically mixed with a second polymer P2 in at least a portion of the second polymer regions R2, or may be physically mixed with a third polymer P3 in at least a portion of the third polymer regions R3. In other words, the hydrophilic material M1 may not chemically bond with the second polymer P2 (or a second structural unit) and the third polymer P3 (or a third structural unit). When the hydrophilic material M1 is a hydrophilic single molecule, the hydrophilic material M1 may be a different material from the second structural unit and/or the third structural unit.

According to this implementation, the polishing pad 11 may further include a hydrophilic material M1 in at least a portion of the second polymer regions R2 and at least a portion of the third polymer regions R3, so that the second and third polymers P2 and P3 may be more effectively dissolved in the slurry composition S. Accordingly, it is possible to increase a conditioning effect of the second polymer P2 and help the third polymer P3 function as a polishing accelerator or polishing inhibitor.

FIG. 7 is a schematic partially enlarged view of an example of a semiconductor substrate polishing apparatus 300A, and is an example partially enlarged view of region ‘B’ of FIG. 1.

Referring to FIG. 7, the semiconductor substrate polishing apparatus 300 may be the same or similar to that described with reference to FIGS. 1 to 6C, except that second polymer regions R2 of the polishing pad 11 are misaligned in a first direction D1 and misaligned in a second direction D2.

In this implementation, the second polymer regions R2 may be defined to include a first group g1 arranged in the first direction D1 and a second group g2 arranged in the second direction D2. Referring to FIG. 7, the first group g1 may be misaligned in the first direction D1, and the second group g2 may be misaligned in the second direction D2.

FIG. 8 is a schematic partially enlarged view of an example of a semiconductor substrate polishing apparatus 300B, and is an example partially enlarged view of region ‘B’ in FIG. 1.

Referring to FIG. 8, the semiconductor substrate polishing apparatus 300B may have the same or similar characteristics as those described with reference to FIGS. 1 to 7, except that second polymer regions R2 of the polishing pad 11 are randomly disposed.

For example, the second polymer regions R2 may not be arranged along a certain direction (e.g., a first direction D2 or a second direction D2) over the entire area of the polishing pad 11. In addition, a diameter or distance of each of the second polymer regions R2 may not have a constant size.

As set forth above, according to example implementations of the present disclosure, at least a portion of a polishing pad includes a hydrophilic polymer and includes a plurality of different polymers, so that a semiconductor substrate polishing apparatus with a self-conditioning function and increasing step removal power of a film to be polished on a substrate may be provided.

The various and beneficial advantages and effects of the present disclosure are not limited to the above-described content, and may be more easily understood through description of specific implementations of the present disclosure.

While this specification contains many specific implementation details, these should not be construed as limitations on the scope of any invention or on the scope of what may be claimed, but rather as descriptions of features that may be specific to particular implementations of particular inventions. Certain features that are described in this specification in the context of separate implementations can also be implemented in combination in a single implementation. Conversely, various features that are described in the context of a single implementation can also be implemented in multiple implementations separately or in any suitable subcombination. Moreover, although features may be described above as acting in certain combinations, one or more features from a combination can in some cases be excised from the combination, and the combination may be directed to a subcombination or variation of a subcombination.

While example implementations have been illustrated and described above, it will be apparent to those skilled in the art that modifications and variations could be made without departing from the scope of the present disclosure as defined by the appended claims.

Claims

1. A semiconductor substrate polishing apparatus, comprising: a polishing table including a polishing pad;a wafer carrier disposed on the polishing table and configured to attach a substrate; anda slurry supplier disposed on the polishing table and configured to include a slurry composition,wherein the polishing pad includes a first polymer region and a plurality of second polymer regions, the first polymer region being defined by a plurality of first polymers, the plurality of second polymer regions being defined by a plurality of second polymers, and the plurality of second polymers being adjacent to each other and positioned within the first polymer region.

2. The semiconductor substrate polishing apparatus of claim 1, wherein, in a cross-section view, the plurality of second polymer regions are positioned in a first direction within the first polymer region and are spaced apart in a second direction, the second direction intersecting the first direction.

3. The semiconductor substrate polishing apparatus of claim 1, wherein the first polymer comprises polyurethane, and wherein the second polymer is selected from a group consisting of polyvinyl alcohol, polyvinyl pyrrolidone, polyacryl amide, polyacrylic acid, and polyethylene glycol.

4. The semiconductor substrate polishing apparatus of claim 1, wherein the polishing pad comprises a plurality of diblock copolymers, and wherein each diblock copolymer of the plurality of diblock copolymers has a first block including the first polymer; anda second block bonded to the first block, the second block including the second polymer.

5. The semiconductor substrate polishing apparatus of claim 1, wherein the polishing pad comprises a plurality of triblock copolymers, and wherein each triblock copolymer of the plurality of triblock copolymers has a first block including the first polymer;a second block bonded to the first block, the second block including the second polymer; anda third block bonded to the second block, the third block including the first polymer.

6. The semiconductor substrate polishing apparatus of claim 1, wherein the first polymer and the second polymer are immiscibly blended with each other.

7. The semiconductor substrate polishing apparatus of claim 1, wherein the polishing pad comprises a hydrophilic single molecule, and wherein the hydrophilic single molecule is disposed in at least a portion of the plurality of second polymer regions, and the hydrophilic single molecule does not form a chemical bond with the second polymer.

8. The semiconductor substrate polishing apparatus of claim 1, wherein the polishing pad comprises a plurality of third polymer regions, the plurality of third polymer regions defined by a third polymer, the third polymer being different from the first polymer and the second polymer, and the third polymer positioned within the first polymer region.

9. The semiconductor substrate polishing apparatus of claim 8, wherein the plurality of third polymer regions are positioned in a hexagonal packed pattern in which six adjacent second polymer regions are disposed at six vertices of a regular hexagon.

10. The semiconductor substrate polishing apparatus of claim 8, wherein the polishing pad comprises a plurality of triblock copolymers, and wherein each triblock copolymer of the plurality of triblock copolymers includes a first block including the first polymer;a second block bonded to the first block, the second block including the second polymer; anda third block bonded to the second block, the third block including the third polymer.

11. The semiconductor substrate polishing apparatus of claim 8, wherein the first polymer, the second polymer, and the third polymer are immiscibly blended with one another.

12. The semiconductor substrate polishing apparatus of claim 8, wherein the second polymer is selected from a group consisting of polyvinyl alcohol and polyvinyl pyrrolidone, and wherein the third polymer is selected from a group consisting of polyacrylamide, polyacrylic acid, and polyethylene glycol.

13. The semiconductor substrate polishing apparatus of claim 1, wherein the polishing pad has a first portion and a second portion, the first portion contacting the slurry composition and the second portion not contacting the slurry composition, and wherein the second portion has no voids.

14. A semiconductor substrate polishing apparatus, comprising: a polishing table including a polishing pad, the polishing pad having a hydrophobic region and a plurality of hydrophilic regions dispersed within the hydrophobic region;a wafer carrier disposed on the polishing table and configured to attach a substrate; anda slurry supplier disposed on the polishing table and configured to include a slurry composition,wherein the polishing pad includes a block copolymer to which a plurality of blocks are chemically bonded,wherein the plurality of blocks include a first polymer block and at least one second polymer block different from the first polymer block,wherein the hydrophobic region is defined by the first polymer block, andwherein the plurality of hydrophilic regions are defined by the at least one second polymer block.

15. The semiconductor substrate polishing apparatus of claim 14, wherein the block copolymer comprises a triblock copolymer, and wherein the triblock copolymer is one in which the second polymer block is bonded to each end of both ends of the first polymer block, the second polymer being centered on the first polymer block.

16. The semiconductor substrate polishing apparatus of claim 14, wherein the plurality of blocks comprise a third polymer block, the third polymer block different from the first polymer and the second polymer, wherein the block copolymer includes a triblock copolymer, andwherein the triblock copolymer is one in which each polymer block of the second polymer block and the third polymer block are bonded to each end of both ends of the first polymer block, the second polymer block and the third polymer block being centered on the first polymer block.

17. The semiconductor substrate polishing apparatus of claim 14, wherein, in a cross-section view, the plurality of hydrophilic regions are positioned in a first direction within the hydrophobic region and are spaced apart in a second direction, the second direction intersecting the first direction.

18. The semiconductor substrate polishing apparatus of claim 14, wherein, in a cross-section view, the plurality of hydrophilic regions comprise a first group positioned in a first direction within the hydrophobic region and a second group positioned in a second direction, the second direction intersecting the first direction, wherein the first group is misaligned in the first direction, andwherein the second group is misaligned in the second direction.

19. A semiconductor substrate polishing apparatus, comprising: a wafer carrier configured to attach a substrate;a slurry supplier configured to include a slurry composition; anda polishing table disposed below the wafer carrier and the slurry supplier, the polishing table including a polishing pad having a first direction and a second direction, the first direction intersecting the first direction in a cross-section view,wherein the polishing pad includes a surface contacting the slurry composition, a plurality of voids adjacent to the surface, and a plurality of hydrophilic polymer regions, the plurality of hydrophilic polymer regions being positioned farther from the surface than the plurality of voids, and the plurality of hydrophilic polymer regions being defined by a plurality of hydrophilic polymers,wherein the plurality of hydrophilic polymer regions are positioned in the first direction and in the second direction, andwherein the plurality of voids are positioned on the surface in at least one direction of the first direction or the second direction.

20. The semiconductor substrate polishing apparatus of claim 19, wherein at least a portion of the plurality of hydrophilic polymer regions are disposed to be adjacent to the surface, and wherein the void is a portion in which the at least a portion of the plurality of hydrophilic polymer regions are removed by the slurry composition.