Claims
- 1. A semiconductor substrate structure comprising:
- a silicon substrate;
- a superconducting thin film layer composed of compound oxide; and
- an intermediate semiconductor layer interposed between said silicon substrate and said superconducting thin film layer, a first side of said intermediate semiconductor layer being in contact with said substrate and a second side of said intermediate semiconductor layer being in contact with said superconducting thin film layer, and wherein said intermediate semiconductor layer comprises a compound semiconductor material.
Priority Claims (12)
Number |
Date |
Country |
Kind |
62-328483 |
Dec 1987 |
JPX |
|
62-328484 |
Dec 1987 |
JPX |
|
62-328485 |
Dec 1987 |
JPX |
|
62-328486 |
Dec 1987 |
JPX |
|
62-328487 |
Dec 1987 |
JPX |
|
62-328488 |
Dec 1987 |
JPX |
|
62-328489 |
Dec 1987 |
JPX |
|
62-328490 |
Dec 1987 |
JPX |
|
62-328491 |
Dec 1987 |
JPX |
|
62-328492 |
Dec 1987 |
JPX |
|
62-328493 |
Dec 1987 |
JPX |
|
62-328494 |
Dec 1987 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 07/856,824, filed Mar. 25, 1992, now U.S. Pat. No. 5,221,660 which is a continuation of application Ser. No. 07/289,719, filed Dec. 27, 1988, now abandoned.
US Referenced Citations (6)
Continuations (2)
|
Number |
Date |
Country |
Parent |
856824 |
Mar 1992 |
|
Parent |
289719 |
Dec 1988 |
|