Claims
- 1. A semiconductor substrate structure comprising:
- a silicon substrate;
- a superconducting thin film layer composed of compound oxide;
- an intermediate semiconductor layer interposed between said silicon substrate and said superconducting thin film layer, a first side of said intermediate semiconductor layer being in contact with said substrate and a second side of said intermediate semiconductor layer being in contact with said superconducting thin film layer, wherein said intermediate semiconductor layer comprises a compound semiconductor material, and wherein said compound semiconductor material is selected from a group consisting of SiC, GaAs, GaP, InP, InSb, ZnSe, CdTe, HgCdTe, GaAlAs, GaInAs, InAlAs, and InGaAsP.
- 2. A semiconductor substrate set forth in claim 1, characterized in that said superconducting thin film layer is composed of a compound oxide of at least one element .alpha. selected from IIa group of the Periodic Table, at least one element .beta. selected from IIIa group of the Periodic Table and at least one element .gamma. selected from a group comprising Ib, IIb, IIIb, IVa and VIIIa groups of the Periodic Table.
- 3. A semiconductor substrate set forth in claim 2, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula:
- (.alpha..sub.1-x .beta..sub.x).gamma..sub.y O.sub.z
- in which .alpha., .beta. and .gamma. have the same definition as above, x is an atomic ratio of .beta. with respect to (.alpha.+.beta.) and has a range of 0.1.ltoreq.x.ltoreq.0.9, and y and z are respective atomic ratios with respect to (.alpha..sub.1-x .beta..sub.x) which is considered to be equal to 1 and each satisfies ranges of 0.4.ltoreq.y.ltoreq.3.0 and 1.ltoreq.z.ltoreq.5 respectively.
- 4. A semiconductor substrate set forth in claim 3, characterized in that said superconducting thin film layer is composed of a compound oxide represented by the general formula:
- (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4
- in which .alpha. stands for Ba or Sr.
- 5. A semiconductor substrate set forth in claim 2, characterized in that said superconducting thin film layer is composed of an oxide having perovskite or oxygen deficient perovskite crystalline structure.
- 6. A semiconductor substrate set forth in claim 2, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula:
- Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta.
- in which Ln stands for at least one lanthanide element selected from the group consisting of La, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er, Yb, Tm and Lu and .delta. is a number which satisfies a range of 0.ltoreq..delta.<1.
- 7. A semiconductor substrate set forth in claim 6, characterized in that the Ln is Y, Er, Ho or Dy.
- 8. A semiconductor substrate set forth in claim 6, characterized in that said compound oxide contain further at least one of element selected from the group consisting of Al, Fe, Co, Ni, Zn, Ag and Ti.
- 9. A semiconductor substrate set forth in claim 2, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula:
- .THETA..sub.4 (.PHI..sub.1-q, Ca.sub.q).sub.m Cu.sub.n O.sub.p+r
- in which .THETA. stands for Bi or T1, .PHI. stands for Sr when .THETA. is Bi and stands for Ba when .THETA. is T1, m and n are numbers each satisfying ranges of 6.ltoreq.m.ltoreq.10 and 4.ltoreq.n.ltoreq.8 respectively, p=(6+m+n), q is a number which satisfies a range of 0<q<1, and r is a number which satisfies a range of -2.ltoreq.r.ltoreq.+2.
- 10. A semiconductor substrate structure comprising:
- a silicon substrate;
- a superconducting thin film layer composed of compound oxide; and
- an intermediate semiconductor layer interposed between said silicon substrate and said superconducting thin film layer, a first side of said intermediate semiconductor layer being in contact with said substrate and a second side of said intermediate semiconductor layer being in contact with said superconducting thin film layer, and wherein said intermediate semiconductor layer comprises a compound semiconductor material, wherein said superconducting thin film layer is composed of a compound oxide of at least one element .alpha. selected from the IIa group of the Periodic Table, at least one element .beta. selected from the IIIa group of the Periodic Table and at least one element .gamma. selected from the group consisting of Ib, IIb, IIIb, IVa and VIIIa groups of the Periodic Table and wherein said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula:
- .theta..sub.4 (.PHI..sub.1-q,Ca.sub.q).sub.m Cu.sub.n O.sub.p+r
- in which .theta. stands for Bi or T1, .PHI. stands for Sr when .theta. is Bi and stands for Ba when .theta. is T1, m and n are numbers each satisfying ranges of 6.ltoreq.m.ltoreq.10 and 4.ltoreq.n.ltoreq.8 respectively, p=(6+m+n), .PHI. is a number which satisfies a range of 0<q<1, and r is a number which satisfies a range of -2.ltoreq.r.ltoreq.+2, and wherein .THETA. is Bi, .PHI. is Sr, and wherein said compound semiconductor material of said intermediate semiconductor layer is GaAs.
Priority Claims (12)
Number |
Date |
Country |
Kind |
62-328483 |
Dec 1987 |
JPX |
|
62-328484 |
Dec 1987 |
JPX |
|
62-328485 |
Dec 1987 |
JPX |
|
62-328486 |
Dec 1987 |
JPX |
|
62-328487 |
Dec 1987 |
JPX |
|
62-328488 |
Dec 1987 |
JPX |
|
62-328489 |
Dec 1987 |
JPX |
|
62-328490 |
Dec 1987 |
JPX |
|
62-328491 |
Dec 1987 |
JPX |
|
62-328492 |
Dec 1987 |
JPX |
|
62-328494 |
Dec 1987 |
JPX |
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62-328493 |
Dec 1987 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 289,719, filed Dec. 27, 1988, now abandoned.
US Referenced Citations (4)
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4395813 |
Roth et al. |
Aug 1983 |
|
4837609 |
Gurvitch et al. |
Jun 1989 |
|
5084437 |
Talvacchio |
Jan 1992 |
|
5084438 |
Matsubara et al. |
Jan 1992 |
|
Foreign Referenced Citations (7)
Number |
Date |
Country |
0290357 |
Nov 1988 |
EPX |
304078 |
Feb 1989 |
EPX |
63-244860 |
Oct 1988 |
JPX |
63-245973 |
Oct 1988 |
JPX |
63-258082 |
Oct 1988 |
JPX |
63-275144 |
Nov 1988 |
JPX |
63-276243 |
Nov 1988 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Kwon et al. "Superconductors as Very High-Speed System Level Intercurrents" IEEE Electron Device Letters, vol. EDL-8, No. 12, Dec. 12, 1987. |
Biegel et al. "Use of High-Temperature Superconductors in High Speed" Mat. Res. Soc Symposium proceed, vol. 99 Dec. 4, 1987, pp. 873-876. |
Continuations (1)
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Number |
Date |
Country |
Parent |
289719 |
Dec 1988 |
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