The present invention relates to increasing the fracture strength of semiconductor substrates used in inkjet printheads and the like, and more generally, to increasing the fracture strength of semiconductor substrates, regardless of intended purpose, that are drilled or otherwise machined to form a hole or other feature therethrough or therein.
Various inkjet printing arrangements are known in the art and include both thermally actuated printheads and mechanically actuated printheads. Thermal actuated printheads tend to use resistive elements or the like to achieve ink expulsion, while mechanically actuated printheads tend to use piezoelectric transducers or the like.
A representative thermal inkjet printhead has a plurality of thin film resistors provided on a semiconductor substrate. A nozzle plate and barrier layer are provided on the substrate and define the firing chambers about each of the resistors. Propagation of a current or a “fire signal” through a resistor causes ink in the corresponding firing chamber to be heated and expelled through the appropriate nozzle.
Ink is typically delivered to the firing chamber through a feed slot that is machined in the semiconductor substrate. The substrate usually has a rectangular shape, with the slot disposed longitudinally therein. Resistors are typically arranged in rows located on both sides of the slot and are preferably spaced an approximately equal distances from the slot so that the ink channel length at each resistor is approximately equal. The width of the print swath achieved by one pass of a printhead is approximately equal to the length of the resistor rows, which in turn is approximately equal to the length of the slot.
Feed slots are typically formed by sand drilling (also known as “sand slotting”). This method is preferred because it is a rapid, relatively simple and scalable (many substrates may be processed simultaneously) process. While sand slotting affords these apparent benefits, sand slotting is also disadvantageous in that it causes micro cracks in the semiconductor substrate that significantly reduce the substrates fracture strength, resulting in significant yield loss due to cracked die. Low fracture strength also limits substrate length which in turn adversely impacts print swath height and overall print speed.
As new printer systems are developed, a key performance parameter is print speed. One way of achieving higher print speed is to increase the width of the print swath of a printhead. One potential manner of increasing print swath width is to increase the length of the substrate and the feed slot therein. Due to micro cracks and other structural defects induced during sand slotting, however, substrates are rendered too fragile to be further extended.
A need thus exists for a machined semiconductor substrate that has increased fracture strength to better withstand the thermal and mechanical stresses induced in ink jet printhead manufacture and use. A need also exists for a printhead semiconductor substrate that has increased fracture strength and can therefore be elongated to achieve longer print swath width. A need further exists for a machined semiconductor substrate for any intended purpose that has increased fracture strength.
One aspect of the present invention is a semiconductor substrate and method of making the same having improved fracture strength. A semiconductor substrate is machined to define a feature therein. The machining process forms a micro-crack in the substrate that reduces the fracture strength of the substrate. The semiconductor substrate is processed to remove portions of the substrate proximate the micro-cracks to improve the fracture strength of the semiconductor substrate.
In one preferred embodiment, the portions of the semiconductor substrate proximate the micro-cracks are removed to increase the radius of curvature of portions of the crack using an etching process.
Referring to
The ink supply may be formed integrally with printhead 10 or formed separately. The ink supply may be separately replaceable from the printhead or replaceable with the printhead. Ink level detection logic (not shown) is preferably provided with the ink supply to indicate an ink volume level. Suitable ink supply arrangements are known in the art.
Printer 10 preferably receives print data from a host machine which may be a computer, facsimile machine, Internet terminal, camera, plotter or other device that is capable of propagating print data to printer 10.
The printhead is preferably provided on a moveable carriage (also located under cover 14) that may move transversely along guide rods as is known. It should be recognized, however, that the printhead could be stationary and, for example, formed as wide as a sheet (or section of a sheet) of print media, such as paper.
Referring to
Each printhead 40 preferably includes a substrate 50 on which one or more ink feed slots 60 is machined (see
Referring to
Contact pads 56 propagate fire or drive signals from interconnects 28 via signal traces 58 to the ink expulsion elements 52. In a preferred embodiment, the ink expulsion elements are thin film resistors of a type known in the art, though it should be recognized that the ink expulsion elements may alternatively be piezo-electric transducers, etc.
The substrate 50 is preferably formed of a semiconductor material such as silicon. Barrier layer 42 is formed on the substrate in such a manner as to define firing chambers 54 (see
Referring to
The formation of the feed slot 60 in substrate 50 has been described in many publications including U.S. Pat. No. 4,680,859 to Johnson, entitled “Thermal Inkjet Print Head Method of Manufacture” and assigned to the present assignee. During the slot 60 formation process, the nozzle of the slotting tool is brought into close proximity with the back of the substrate 50 and high pressure abrasive particles strike the substrate 50. Due to the random nature of the abrasive striking the substrate 50, the size and shape of the slot 60 is difficult to control. In addition, the point at which the slot 60 “breaks through” the front of the substrate 50 also varies and depending upon this location micro-cracks can be formed in the substrate 50. Tests have shown that if the slot 60 breaks through the center of the substrate 50 that stress cracks form at the ends of the ink feed slot 60. These micro-cracks act as fracture initiation sites and can cause the die to fracture when it is placed under the mechanical and thermal stress such as during the manufacturing process.
There has been a great deal of effort spent on making the slotting process more repeatable and controllable, and in eliminating these micro-cracks 74. Up to the present invention, however, there has not been a complete solution to the die fracture problem.
Accordingly, to improve fracture strength, substrate 50 is preferably etched after machining to remove portions of the semiconductor material where the micro-cracks are formed. This etching process changes the nature of the semiconductor material such that the line of the micro-crack is modified. One modification to the mirco-crack performed by the etch process is to alter the terminus of the end point of the crack.
Referring to
Substrate 50 and printhead 40 in which the substrate is utilized is preferably made as follows. Printhead circuitry for a plurality of printhead substrates is formed on a wafer. Standard thin film techniques are preferably utilized to form the printhead substrate conductive patterns. Following this fabrication, the wafer is cleaned and prepared for barrier layer mounting. The barrier layer is typically formed by a polymer lamination process.
After barrier layer 42 formation, the ink feed slot is sand drilled as described above for each of the plurality of printhead substrate 50 on the wafer. This sand drill process tends to form small cracks 74 that tend to reduce the fracture strength of the substrate 50.
The preferred etch process is then performed to improve the fracture strength of the substrate 50. This process is performed by rinsing the wafer preferably in a BOE bath for 3.5 minutes at 20.9° C. to remove naturally grown SiO2 (72 of
By processing substrate 50 as discussed above or in a related manner, a printhead 40 is produced that has increased fracture strength. The increased fracture strength in turn results in less substrate cracking during manufacture thereby increasing production yield and product life. In addition, increased fracture strength allows larger printheads 40 having longer ink feed slots 60 allowing larger print swaths to be printed. The ability to print larger print swaths enables greater printing speed and greater through put for the printing system 10.
In an alternate embodiment, the etch is performed after the wafer is singulated with a diamond saw. The edges of the die are typically chipped and cracked due to the shear loads induced by the cutting of the rotary blade. These chipped areas typically include cracks which under thermal and mechanical loads can propagate into the die. Performing an etch on these die has been show to remove these local cracks resulting in a more fracture resistant and manufacturable substrate.
Another benefit related to the use of TMAH and like substances is that TMAH is an anisotropic etch (i.e., etches more rapidly in certain crystalline orientations than in others) and as such tends to form pyramidal shaped recesses in the monocrystalline silicon material 50. This characteristic pattern provides a way of easily determining whether a die has been etched.
With respect to alternatives for TMAH, it should be recognized that Si material may also be removed with KOH or other similarly acting chemical echants.
Although etching is a preferred manner for removal of crack containing material, other techniques also fall within the spirit and scope of the present invention including re-heating or re-melting techniques and laser annealing.
This is a Divisional of U.S. patent application Ser. No. 09/532,105, filed on Mar. 21, 2000, now U.S. Pat. No. 6,560,871, which is assigned to the assignee of the present invention and incorporated herein by reference.
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5387314 | Baughman et al. | Feb 1995 | A |
5734395 | Kamisuki et al. | Mar 1998 | A |
5787558 | Murphy | Aug 1998 | A |
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0749835 | Dec 1996 | EP |
0887187 | Dec 1998 | EP |
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05152611 | Jun 1993 | JP |
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Number | Date | Country | |
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20030117458 A1 | Jun 2003 | US |
Number | Date | Country | |
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Parent | 09532105 | Mar 2000 | US |
Child | 10357824 | US |