Semiconductor Surface Passivation

Information

  • NSF Award
  • 9461938
Owner
  • Award Id
    9461938
  • Award Effective Date
    6/1/1995 - 30 years ago
  • Award Expiration Date
    3/31/1996 - 29 years ago
  • Award Amount
    $ 64,995.00
  • Award Instrument
    Standard Grant

Semiconductor Surface Passivation

This Small Business Innovation Research Phase I project involves the investigation of surface passivation technologies for use in compound semiconductor devices. Many current semiconductor devices are limited in performance by problems associated with surface-related defects. Semiconductor laser diodes are especially sensitive to the presence of surface defects. SDL proposes an innovative passivation technique to substantially reduce surface defects in compound semiconductor devices. The proposed technology passivates and seals the semiconductor surface to prevent degradation via surface oxidation. The surface passivation technology developed during this program will have a significant impact in both optoelectronic and electronic compound semiconductor devices. Furthermore, the development of a high quality passivation technology by a U.S. manufacturer will significantly benefit U.S. competitiveness in the face of intense foreign investment and competition.

  • Program Officer
    Ritchie B. Coryell
  • Min Amd Letter Date
    5/24/1995 - 30 years ago
  • Max Amd Letter Date
    5/24/1995 - 30 years ago
  • ARRA Amount

Institutions

  • Name
    SDL Inc
  • City
    San Jose
  • State
    CA
  • Country
    United States
  • Address
    80 Rose Orchard Way
  • Postal Code
    951341356
  • Phone Number
    4089439411

Investigators

  • First Name
    Randall
  • Last Name
    Geels
  • Start Date
    5/24/1995 12:00:00 AM

FOA Information

  • Name
    Engineering-Electrical
  • Code
    55