Claims
- 1. A shape memory alloy being polycrystalline and having a substantially uniformly fine-grained crystal structure, crystal orientations thereof being arranged substantially along a direction suitable for an expected operational direction.
- 2. A shape memory alloy as set forth in claim 1, wherein the average grain diameter of crystals is 10 microns or less.
- 3. A shape memory alloy prepared by a process comprising the steps of:
(a) providing a raw shape memory alloy having a substantially uniformly fine-grained crystal structure; and (b) arranging crystal orientations of said raw shape memory alloy substantially along a direction suitable for an expected operational direction.
- 4. A shape memory alloy as set forth in claim 3, wherein step (a) comprises the step of:
(c) heating said raw shape memory alloy in an amorphous state or a state similar thereto to the temperature at which recrystallization begins or a little above for a short period of time, with a stress applied to said raw shape memory alloy in said expected operational direction at least in the stage where a recovery recrystallization begins, to produce a substantially uniform fine-grained crystal structure with an anisotropy in said expected operational direction, while relaxing the internal stress generated in said raw shape memory alloy in said expected operational direction; and step (b) comprises the steps of:
(d) subjecting said raw shape memory alloy to a high level of deformation by means of a stress in said expected operational direction at a very low temperature at which the austenite phase does not remain in said raw shape memory alloy so that a slide deformation is introduced into the crystal grains of said raw shape memory alloy which have been transformed completely into the martensite phase within a reversible range along the direction of said stress; (e) heating said raw shape memory alloy to a temperature between Af and the recrystallization temperature with a stress applied to said raw shape memory alloy in said expected operational direction so that the directions of reversible slip motions of the respective crystal grains of said raw shape memory alloy are arranged in a direction suitable for said expected operational direction.
- 5. A shape memory alloy as set forth in claim 4, wherein prior to step (c), said raw shape memory alloy is subject to a severe cold working so that the crystal structure thereof is destructed and is brought to a state similar to an amorphous state.
- 6. A shape memory alloy as set forth in claim 1, wherein said shape memory alloy is an intermetallic compound.
- 7. A shape memory alloy as set forth in claim 6, wherein said shape memory alloy is a Ti—Ni based alloy.
- 8. A shape memory alloy as set forth in claim 6, wherein said shape memory alloy is a Ti—Ni—Cu based alloy.
- 9. A shape memory alloy prepared by a process comprising the steps of:
(g) subjecting a raw shape memory alloy having an anisotropy in an expected operational direction to a high level of deformation by means of a stress in said expected operational direction at a very low temperature at which the austenite phase does not remain in said raw shape memory alloy so that a slide deformation is introduced into the crystal grains of said raw shape memory alloy which have been transformed completely into the martensite phase within a reversible range along the direction of said stress; (h) heating said raw shape memory alloy to a temperature between the austenite transformation terminate temperature Af and the recrystallization temperature with a stress applied to said raw shape memory alloy in said expected operational direction so that the directions of reversible slip motions of the respective crystal grains of said raw shape memory alloy are arranged in a direction suitable for said expected operational direction.
Priority Claims (1)
| Number |
Date |
Country |
Kind |
| 2000-204927 |
Jul 2000 |
JP |
|
Parent Case Info
[0001] This application is a divisional of co-pending application Ser. No. 09/871,619, filed on Jun. 4, 2001, the entire contents of which are hereby incorporated by reference and for which priority is claimed under 35 U.S.C. § 120; and this application claims priority of application Ser. No. 2000-204927 filed in Japan on Jul. 6, 2000 under 35 U.S.C. § 119.
Divisions (1)
|
Number |
Date |
Country |
| Parent |
09871619 |
Jun 2001 |
US |
| Child |
10244524 |
Sep 2002 |
US |