Patent Application
20250159765
An embodiment of the present invention relates to a sheath heater. Further, an embodiment of the present invention relates to a stage including the sheath heater.
Semiconductor devices are installed in almost all electronic devices and play an important role for the functions of the electronic devices. Semiconductor devices utilize semiconductor characteristics possessed by silicon, etc. Semiconductor devices are constructed by stacking a semiconductor film, an insulating film, and a conductive film on a substrate and patterning these films. These films are stacked by vapor deposition, sputtering, chemical vapor phase deposition (CVD), or substrate chemical reactions, and are patterned by a photolithography process. The photolithography process includes the formation of a resist on the films that are subjected to patterning, the exposure of the resist, the formation of a resist mask by development, the partial removal of these films by etching, and the removal of the resist mask.
The characteristics of the films described above depend largely on the conditions for forming the films or the conditions for patterning. One of the above conditions is a temperature of the substrate. In many cases, the temperature of the substrate is controlled by adjusting the temperature of a stage on which the substrate is placed. A sheath heater is one of the heaters that heat the stage in order to heat the substrate and uniformly suppress the temperature distribution in the substrate. For example, Japanese laid-open patent publication No. 2009-91660 discloses a stage equipped with multiple sheath heaters in which an electric heating wire (a heater wire) is arranged in a metal sheath.
A sheath heater according to an embodiment of the present invention includes a metal sheath, a heater wire disposed in the metal sheath, an insulating material filled in the metal sheath so as to separate the metal sheath and the heater wire, a lead wire for supplying power to the heater wire, a crimp sleeve connecting the heater wire extending from an end of the metal sheath with the lead wire, a cylindrical member covering the end of the metal sheath, and a lid member engaging with the cylindrical member and including an opening into which the lead wire is inserted. The crimp sleeve is disposed in the cylindrical member. The end of the metal sheath includes a first insulating tube including a first through hole into which the heater wire is inserted and a sealing material filling a gap between the metal sheath and the first insulating tube. The sealing material includes a ceramic binder.
The first insulating tube may include two first through holes.
The sheath heater may further include a second insulating tube disposed in the cylindrical member and including a second through hole. The the crimp sleeve may be disposed in the second through hole.
The second insulating tube may include two second through holes.
The sheath heater may further include a locking member fixed to the lead wire. The locking member may not be joined to the lid member. The locking member may be fixed to the lead wire by clamping the lead wire.
The sheath heater may further include a third insulating tube disposed between the first insulating tube and the second insulating tube in the cylindrical member and including a third through hole into which the heater wire is inserted. An outer diameter of the the third insulating tube may be smaller than a hole diameter of the the second through hole.
A part of the third insulating tube may be inserted into the second through hole. The two third insulating tubes are disposed in the cylindrical member.
A stage according to an embodiment of the present invention includes a shaft and the above sheath heater. The end of the metal sheath is stored in the shaft.
In a sheath heater, an insulating material is filled in a metal sheath to prevent a short circuit between the metal sheath and a heater wire (for example, see Japanese laid-open patent publication No. 2021-26857). Further, an end of the metal sheath is sealed with an epoxy adhesive to prevent moisture absorption and scattering of the insulating material filled in the metal sheath. When the sheath heater is used in a stage, it is preferable that the end of the metal sheath is stored in a shaft of the stage. However, the temperature inside the shaft may become high (for example, over 100 degrees). In that case, since the heat resistance temperature of the epoxy adhesive is low, the above-described configuration cannot be applied. Therefore, a sheath heater with improved heat resistance has been desired in order to widen the operating temperature range of the stage.
In view of the above problems, an embodiment of the present invention can provide a sheath heater with improved heat resistance. Further, an embodiment of the present invention can provide a stage that is used in a wide temperature range.
A sheath heater according to an embodiment of the present invention has a structure in which a terminal portion can withstand high temperatures. Therefore, heat resistance of the sheath heater is improved. Further, a stage according to an embodiment of the present invention includes the sheath heater with improved heat resistance, so that the operating temperature range of the stage is widened.
Hereinafter, embodiments of the invention disclosed in the present application are described with reference to the drawings. However, the present invention can be implemented in various forms without departing from the gist thereof and should not be construed as being limited to the description of the following exemplary embodiments.
For the sake of clarity of description, the drawings may be schematically represented with respect to widths, thicknesses, shapes, and the like of the respective portions compared with actual embodiments. However, they are merely an example and do not limit the interpretation of the present invention. In the present specification and the respective drawings, components having the same functions as those described with reference to the preceding drawings are denoted by the same reference numerals, and a duplicate description thereof may be omitted. Further, although the terms “upper” and “lower” are used in the explanation, the terms “upper” and “lower” respectively indicate the direction when the stage is in use (when a substrate is placed on it).
In the specification and the drawings, the same reference numerals may be used when multiple components are identical or similar in general, and reference numerals with a lower or upper case letter of the alphabet may be used when the multiple components are distinguished. Further, reference numerals with a hyphen and a natural number may be used when multiple portions of one component are distinguished.
A sheath heater 10 according to an embodiment of the present invention is described with reference to
Specifically,
The sheath heater 10 includes a heater portion 100 and a terminal portion 200. The heater portion 100 includes a metal sheath 110, a heater wire 120, an insulating material 130, a first insulating tube 140, and a sealing material 150. The terminal portion 200 includes a cylindrical member 210, a lid member 220, a locking member 230, a lead wire 240, a connection terminal 250, a crimp sleeve 260, a second insulating tube 270, and a third insulating tube 280. In addition, some of the components of the heater portion 100 are inserted into the terminal portion 200, and may be described as the terminal portion 200 in the following description.
In the heater portion 100, the heater wire 120 is disposed in the metal sheath 110. The insulating material 130 is filled in the metal sheath 110 so as to separate the metal sheath 110 from the heater wire 120. In other words, the heater wire 120 is embedded in the insulating material 130 and is electrically insulated from the metal sheath 110.
A first end 111-1 of the metal sheath 110 is opened, and a second end 111-2 of the metal sheath 110 is closed. The first insulating tube 140 is disposed at the first end 111-1 of the metal sheath 110. The sealing material 150 is filled in the gap between the metal sheath 110 and the first insulating tube 140, and the first insulating tube 140 is fixed to the first end 111-1 of the metal sheath 110.
Although the cross-sectional shape of the first insulating tube 140 is circular, the cross-sectional shape of the first insulating tube 140 is not limited thereto. It is preferable that the outer diameter of the first insulating tube 140 is smaller than the inner diameter of the metal sheath 110, and a part of the first insulating tube 140 is inserted into the metal sheath 110. The first insulating tube 140 includes two first through holes 141. In the metal sheath 110, the heater wire 120 is folded, and both ends of the heater wire 120 extend outward from the first end 111-1 of the metal sheath 110. In other words, each of the two heater wires 120 corresponding to both ends is inserted into the first through hole 141 at the first end 111-1 of the metal sheath 110.
The metal sheath 110 has a small outer diameter and is flexible. Therefore, the heater portion 100 can be bent. Further, since the heater wire 120 is protected by the metal sheath 110 and the insulating material 130, the heater portion 100 has excellent impact resistance and corrosion resistance.
The thermal conductivity of the metal sheath 110 is preferably greater than or equal to 10 W/mK and less than or equal to 430 W/mK. For example, a metal such as aluminum, titanium, nickel, iron, chromium, niobium, copper, or molybdenum, or an alloy thereof can be used as the material of the metal sheath 110.
The heater wire 120 includes a heating wire and a non-heating wire. The heating wire generates heat when power is supplied to it. On the other hand, the non-heating wire has a higher thermal conductivity than the heating wire, and the generation of heat is suppressed. Therefore, when power is supplied to the heater wire 120, heat is generated mainly in the heating wire. The joint portion between the heating wire and the non-heating wire is located inside the metal sheath 110, and the non-heating wire of the heater wire 120 extends outward from the first end 111-1 of the metal sheath 110. For example, a metal such as nickel, chromium, iron, molybdenum, tungsten, or aluminum, or carbon, or an alloy thereof or oxide thereof can be used as the material of the heating wire. For example, a metal such as aluminum, copper, nickel, or iron, or an alloy thereof can be used as the material of the non-heating wire.
The insulating material 130 is filled in the metal sheath 110 in the form of a powder or fine particles. Alternatively, the insulating material 130 may be filled in the metal sheath 110 in the form of a sintered body, a pre-sintered body, or a compact of powder or fine particles. The thermal conductivity of the insulating material 130 is preferably greater than or equal to 10 W/mK and less than or equal to 300 W/mK. For example, magnesium oxide, aluminum oxide, silicon oxide, zirconium oxide, tantalum oxide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, molybdenum nitride, niobium nitride, boron carbide, aluminum carbide, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, molybdenum carbide, or niobium carbide can be used as the material of the insulating material 130.
For example, magnesium oxide, aluminum oxide, aluminum nitride, silicon oxide, zirconium oxide, tantalum oxide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, molybdenum nitride, niobium nitride, boron carbide, aluminum carbide, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, molybdenum carbide, or niobium carbide can be used as the material of the first insulating tube 140.
For example, a ceramic-based sealant containing a ceramic binder is used as the sealing material 150. The ceramic-based sealant has better heat resistance than an epoxy-based sealant. For example, magnesium oxide, aluminum oxide, aluminum nitride, silicon oxide, zirconium oxide, tantalum oxide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, molybdenum nitride, niobium nitride, boron carbide, aluminum carbide, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, molybdenum carbide, or niobium carbide can be used as the material of the ceramic binder.
In the terminal portion 200, the cylindrical member 210 includes a first cylindrical body 211-1 and a second cylindrical body 211-2, and has a structure in which the first cylindrical body 211-1 and the second cylindrical body 211-2 are connected to each other. The inner diameter (or outer diameter) of the first cylindrical body 211-1 is larger than the inner diameter (or outer diameter) of the second cylindrical body 211-2. That is, the cylindrical member 210 has a structure in which the first cylindrical body 211-1 and the second cylindrical body 211-2 are connected to each other in a stepped manner. However, the structure of the cylindrical member 210 is not limited thereto. The cylindrical member 210 may have a structure in which the first cylindrical body 211-1 and the second cylindrical body 211-2 are connected to each other in a tapered manner.
The inner diameter of the second cylindrical body 211-2 is approximately equal to the outer diameter of the metal sheath 110, and the first end 111-1 of the metal sheath 110 is inserted into the second cylindrical body 211-2 of the cylindrical member 210. In other words, the second cylindrical body 211-2 of the cylindrical member 210 covers the first end 111-1 of the metal sheath 110. An opening portion of the cylindrical member 210 (an opening portion on the side of the first cylindrical body 211-1) is covered with the lid member 220. A flange portion 212 is disposed on the outer circumferential surface of the first cylindrical body 211-1, and the lid member 220 is engaged by an end of the first cylindrical body 211-1 and the flange portion 212.
The first end 111-1 of the metal sheath 110 inserted into the second cylindrical body 211-2 of the cylindrical member 210 is joined to the second cylindrical body 211-2 of the cylindrical member 210 by using welding, brazing, or the like. The lid member 220 is joined to the flange portion 212 by using welding, screwing, brazing, or the like. For example, an alloy containing silver, copper, and zinc, an alloy containing copper and zinc, copper containing a trace amount of phosphorus, an alloy containing aluminum, an alloy containing titanium, copper, and nickel, an alloy containing titanium, zirconium, and copper, or an alloy containing titanium, zirconium, copper, and nickel can be used as the brazing material.
The lid member 220 includes an opening portion 221. The diameter of the opening portion 221 of the lid member 220 is smaller than the diameter of the opening portion of the first cylinder 211-1 of the cylindrical member 210. The two lead wires 240 are inserted into the opening portion 221 of the lid member 220. That is, one end of the lead wire 240 is located inside the cylindrical member 210, and the other end of the lead wire 240 is located outside the cylindrical member 210. The connection terminal 250 is connected to the other end of the lead wire 240. The connection terminal 250 is connected to a power source that supplies power to the sheath heater 10.
The locking member 230 is attached to the lead wire 240 that extends to the outside of the cylindrical member 210 through the opening portion of the lid member 220. The locking member 230 clamps the lead wire 240 and is fixed to the lead wire 240. Although the locking member 230 may be in contact with the lid member 220, the locking member 230 and the lid member 220 are not joined to each other. For example, although the locking member 230 is a set collar, the locking member 230 is not limited thereto.
In the cylindrical member 210, the heater wire 120 is connected to the lead wire 240. Specifically, one end of the lead wires 240 is connected to each of both ends of the heater wire 120 via the crimp sleeve 260. Therefore, the two crimp sleeves 260 corresponding to the two lead wires 240 are in the cylindrical member 210.
The heater wire 120 may expand and contract due to heat generation, etc. In this case, if the lead wire 240 connected to the heater wire 120 is fixed, the heater wire 120 may lose its flexibility and may break. Therefore, as described above, the locking member 230 fixed to the lead wire 240 is not joined to the lid member 220 in the sheath heater 10, and is configured to move in accordance with the expansion and contraction of the heater wire 120.
The second insulating tube 270 and two third insulating tubes 280 are disposed in the cylindrical member 210. As shown in
The outer diameter of the third insulating tube 280 is smaller than the hole diameter of the second through hole 271 of the second insulating tube 270. At least a portion of the third insulating tube 280 may be inserted into the second through hole 271 of the second insulating tube 270.
The same material of the metal sheath 110 can be used as the material of each of the cylindrical member 210 and the lid member 220. Further, the material of each of the cylindrical member 210 and the lid member 220 may further include stainless steel or the like.
The same material as that of the first insulating tube 140 can be used as each of the second insulating tube 270 and the third insulating tube 280.
As described above, the sheath heater 10 does not include any component with a low heat resistance temperature, such as an epoxy adhesive. Therefore, the heat resistance of the sheath heater 10 is improved.
The sheath heater 10 is a so-called one-terminal type sheath heater. However, the configuration of the sheath heater 10 can also be applied to a two-terminal type sheath heater, and similar effects can be achieved.
A stage 20 according to an embodiment of the present invention is described with reference to
As shown in
A semiconductor substrate including silicon or a compound semiconductor, and an insulating substrate including quartz or glass is placed on the first support plate 310. Therefore, an upper surface of the first support plate 310 has a flat surface. For example, a metal having a thermal conductivity greater than or equal to 200 W/mK and less than or equal to 430 W/mK can be used as the material of the first support plate 310. When a metal having a high thermal conductivity is included in the first support plate 310, the thermal energy generated by the sheath heater 10 can be efficiently conducted to the first support plate 310. Further, the metal included in the first support plate 310 preferably has a thermal expansion coefficient greater than or equal to 5×10−6/K and less than or equal to 25×10−6/K. Specifically, titanium, aluminum, stainless steel, or the like can be used as the metal of the first support plate 310.
Although not shown in the figures, the first support plate 310 may be provided with an electrostatic chuck for fixing the substrate, a through hole for supplying a gas with high thermal conductivity such as helium between the substrate and the stage 20, or a circulation channel for circulating a liquid medium.
The same metal of the first support plate 310 can be used as the second support plate 320. The metal included in the second support plate 320 may be the same as or different from the metal included in the first support plate 310. When the metal included in the first support plate 310 and the metal included in the second support plate 320 are different from each other, it is preferable that the respective metals are selected so that the difference in thermal expansion coefficient is less than or equal to 10×10−6/K. Since this suppresses deformation of the stage 20 due to the difference in thermal expansion, the reliability of the stage 20 can be improved.
Although not shown in the figures, a third support plate may be disposed below the second support plate 320 in the stage 20. The third support plate includes a similar configuration to the first support plate 310 or the second support plate 320. The third support plate may also be joined to the second support plate 320 by welding, screwing, brazing, or the like.
The shaft 330 has a hollow structure in order to store the lead wires 240 of the sheath heater 10. When the stage 20 is provided with an electrostatic chuck, wirings connected to the electrostatic chuck are also stored in the shaft 330.
Although not shown in the figures, the shaft 330 may be connected to a rotation mechanism. When the shaft 330 is connected to the rotation mechanism, the stage 20 can be rotated around the long axis of the shaft 330.
As shown in
As shown in
The second support plate 320 is provided with two through holes 322 in a region overlapping the shaft 330. In each of the first sheath heater 10-1 and the second sheath heater 10-2 arranged on the second support plate 320, the heater portion 100 is bent and inserted into the through hole 322, and the terminal portion 200 is stored in the shaft 330.
The connection terminal 250 of the terminal portion 200 is connected to a heater power supply (not shown in the figures). When power is supplied from the heater power supply to the heater portion 100 via the lead wire 240, the heater portion 100 generates heat, and the first support plate 310 and the second support plate 320 are heated.
As described above, the stage 20 includes the sheath heater 10 with improved heat resistance. Therefore, even when the stage 20 has a configuration in which the first end 111-1 of the sealed metal sheath 110 is stored inside the shaft 330, the stage 20 can be used at high temperatures. That is, when the sheath heater 10 is included in the stage 20, the operating temperature range of the stage 20 can be widened. Further, since the first sheath heater 10-1 and the second sheath heater 10-2 can be controlled independently, the temperature of the substrate placed on the stage 20 can be uniformly and precisely controlled.
A stage 20A which is one modification of the stage 20 is described with reference to
As shown in
An end of the groove 311 of the first support plate 310 is provided in a region overlapping the shaft 330. The end of the groove 311 communicates with a through hole 322 of the second support plate 320. Therefore, in each of the first sheath heater 10-1 and the second sheath heater 10-2 arranged on the first support plate 310, the heater portion 100 is bent and inserted into the through hole 322, and the terminal portion 200 is stored in the shaft 330.
As described above, the stage 20A also includes the sheath heater 10 with improved heat resistance. Therefore, it is possible to widen the operating temperature range of the stage 20A. Further, since the first sheath heater 10-1 and the second sheath heater 10-2 can be controlled independently, the temperature of the substrate placed on the stage 20A can be controlled uniformly and precisely.
A stage 20B which is another modification of the stage 20 is described with reference to
As shown in
A through hole 322 of the second support plate 320 is provided in a region overlapping the shaft 330. In each of the first sheath heater 10-1 and the second sheath heater 10-2 arranged between the first support plate 310 and the second support plate 320, the heater portion 100 is bent and inserted into the through hole 322, and the terminal portion 200 is stored in the shaft 330.
As described above, the stage 20B also includes the sheath heater 10 with improved heat resistance. Therefore, it is possible to widen the operating temperature range of the stage 20B. Further, since the first sheath heater 10-1 and the second sheath heater 10-2 can be controlled independently, the temperature of the substrate placed on the stage 20B can be controlled uniformly and precisely.
A stage 20C which is another modification of the stage 20 is described with reference to
As shown in
In the stage 20C, the second support plate 320 is divided into four sections, and four independent sheath heaters 10 are arranged in each of the four sections. In each of the four sections, the sheath heaters 10 are arranged in a zigzag pattern to form an arc. The first sheath heater 10-1 to the fourth sheath heater 10-4 have the same arrangement configuration. Further, when one of the first sheath heater 10-1 to the fourth sheath heater 10-4 is rotated 90 degrees about an axis passing through the center of the second support plate 320, it is arranged so as to overlap the other of the first sheath heater 10-1 to the fourth sheath heater 10-4.
As described above, the stage 20C also includes the sheath heater 10 with improved heat resistance. Therefore, it is possible to widen the operating temperature range of the stage 20C. Further, since the first sheath heater 10-1 to the fourth sheath heater 10-4 can be controlled independently, the temperature of the substrate placed on the stage 20B can be controlled uniformly and precisely for each section.
An etching apparatus 50 according to an embodiment of the present invention is described with reference to
The etching apparatus 50 can perform dry etching on various films. The etching apparatus 50 includes a chamber 502. The chamber 502 supplies a space to perform etching on a film of a conductor, an insulator, or a semiconductor formed on a substrate.
An exhaust device 504 is connected to the chamber 502, by which the inside of the chamber 502 can be set under a reduced-pressure atmosphere. The chamber 502 is further provided with an inlet tube 506 for introducing a reaction gas which is supplied to the chamber 502 through a valve 508. For example, a fluorine-containing organic compound such as tetrafluorocarbon (CF4), octafluorocyclobutane (c-C4F8), decafluorocyclopentane (c-C5F10), hexafluorobutadiene (C4F6) is used as the reaction gas.
A microwave source 512 may be provided at an upper portion of the chamber 502 through a waveguide tube 510. The microwave source 512 has an antenna and the like for supplying a microwave and outputs a high-frequency microwave such as a microwave of 2.45 GHZ and a radio wave (RF) of 13.56 MHz. The microwave generated by the microwave source 512 is transmitted to the upper portion of the chamber 502 with the waveguide tube 510 and then introduced into the chamber 502 through a window 514 including quartz, ceramic, or the like. The reaction gas is plasmatized with the microwave, and the etching proceeds with electrons, ions, and radicals included in the plasma.
The stage 20 for placing a substrate is provided at a lower portion of the chamber 502. A power source 524 is connected to the stage 20, and high-frequency electric power is supplied to the stage 20, thereby forming an electric field in a direction perpendicular to the surfaces of the stage 20 and the substrate with the microwave. Magnets 516, 518, and 520 may be provided at the upper portion and on a side surface of the chamber 502. The magnets 516, 518, and 520 may each be a permanent magnet or an electromagnet having an electromagnetic coil. A magnetic component parallel to the surfaces of the stage 20 and the substrate is generated with the magnets 516, 518, and 520. The electrons in the plasma resonate upon receiving a Lorentz force in association with the electrical field generated by the microwave and are bound on the surfaces of the stage 20 and the substrate. Accordingly, high-density plasma can be generated on the substrate surface.
A heater power source 530 for controlling the sheath heater 10 provided to the stage 20 is connected to the stage 20. As an optional structure, a power source 526 for an electrostatic chuck for fixing the substrate to the stage, a temperature controller 528 for controlling the temperature of a medium circulated in the stage 20, and a rotation-controlling device (not shown in the figures) for rotating the stage 20 may be further connected to the stage 20.
A CVD apparatus 60 according to an embodiment of the present invention is described with reference to
The CVD apparatus 60 includes a chamber 602. The chamber 602 provides a space for chemically reacting a reaction gas to form various films on a substrate.
An exhaust apparatus 604 is connected to the chamber 602, by which the pressure in the chamber 602 can be reduced. The chamber 602 is further provided with an inlet tube 606 for introducing the reaction gas, and the reaction gas for film formation is introduced into the chamber 602 through a valve 608. As the reaction gas, a variety of gases can be used depending on the films to be formed. The gas may be a liquid at a normal temperature. For example, thin films of silicon, silicon oxide, silicon nitride, and the like can be prepared using silane, dichlorosilane, tetraethoxysilane, and the like. Further, metal films of tungsten, aluminum, and the like can be prepared using tungsten fluoride, trimethylaluminum, and the like.
Similar to the etching apparatus 50, a microwave source 612 may be provided at an upper portion of the chamber 602 through a waveguide tube 610. A microwave generated with the microwave source 612 is introduced into the chamber 602 with the waveguide tube 610. The reaction gas is plasmatized with the microwave, and the chemical reaction of the gas is promoted by a variety of active species included in the plasma. Products obtained by the chemical reactions are deposited over a substrate, resulting in a thin film. As an optional element, a magnet 644 may be provided in the chamber 602 in order to increase plasma density. The stage 20 is disposed at a lower portion of the chamber 302, which enables deposition of a thin film in a state where a substrate is placed over the stage 20. Similar to the etching apparatus 50, magnets 616 and 618 may be further provided on a side surface of the chamber 602.
A heater power source 630 for controlling the sheath heater 10 provided in the stage 20 is further connected to the stage 20. As an optional element, a power source 624 for supplying a high-frequency electric power to the stage 20, a power source 626 for an electrostatic chuck, a temperature controller 628 for temperature control of a medium circulated in the stage 20, or a rotation-controlling device (not shown in the figures) for rotating the stage 20, and the like may be connected to the stage 20.
A sputtering apparatus 70 according to an embodiment of the present invention is described with reference to
The sputtering apparatus 70 includes a chamber 702. The chamber 702 provides a space for collision of high-speed ions with a target and deposition of target atoms generated by the collision.
An exhaust apparatus 704 for reducing pressure in the chamber 702 is connected to the chamber 702. An inlet tube 706 for supplying a sputtering gas such as argon into the chamber 702 and a valve 708 are provided to the chamber 702.
A target stage 710 for supporting a target containing a material to be deposited and functioning as a cathode is arranged at a lower portion of the chamber 702, over which the target 712 is provided. A high-frequency power source 714 is connected to the target stage 710, and plasma can be generated in the chamber 702 with the high-frequency power source 714.
The stage 20 may be disposed at an upper portion of the chamber 702. In this case, film-formation proceeds in the state where a substrate is placed under the stage 20. Similar to the etching apparatus 50 and the CVD apparatus 60, a heater-power source 730 is connected to the stage 20. A power source 724 for supplying a high-frequency electric power to the stage 20, a power source 726 for an electrostatic chuck, a temperature controller 728, and a rotation-controlling device (not shown in the figures) for rotating the stage 20 may be connected to the stage 20.
Argon ions accelerated with the plasma generated in the chamber 702 collide with the target 712, and the atoms of the target 712 are sputtered. The sputtered atoms fly to a substrate placed under the stage 20 while a shutter 716 is opened and are deposited.
In the present embodiment, the configuration is exemplified in which the stage 20 and the target stage 710 are respectively disposed at the upper portion and the lower portion of the chamber 702. However, the present embodiment is not limited to this configuration, and the sputtering apparatus 70 may be configured so that the target 712 is positioned over the stage 20. Alternatively, the stage 20 may be disposed so that a main surface of the substrate is arranged perpendicular to the horizontal plane, and the target stage 710 may be arranged to oppose the stage 20.
An evaporation apparatus 80 according to an embodiment of the present invention is described with reference to
The evaporation apparatus 80 includes a chamber 802. The chamber 802 provides a space for evaporating a material in an evaporation source 810 and depositing the evaporated material over a substrate.
An exhaust apparatus 804 for making the inside of the chamber 802 a high vacuum is connected to the chamber 802. An inlet tube 806 for returning the inside of the chamber 802 to an atmospheric pressure is provided to the chamber 802, and an inert gas such as nitrogen and argon is introduced into the chamber 802 through a valve 808.
The stage 20 may be disposed at an upper portion of the chamber 802. Deposition of the material proceeds in a state where a substrate is placed under the stage 20. Similar to the etching apparatus 50, the CVD apparatus 60, and the sputtering apparatus 70, a heater-power source 828 is connected to the stage 20. As an optional structure, a power source 824 for an electrostatic chuck, a temperature controller 826, and a rotation-controlling device 830 for rotating the stage 20 may be connected to the stage 20. The stage 20 may further include a mask holder 816 for fixing a metal mask between the substrate and the evaporation source 610. With this structure, it is possible to arrange the metal mask at a vicinity of the substrate so that an opening portion of the metal mask overlaps a region where the material is to be deposited.
The evaporation source 810 is provided at a lower portion of the chamber 802 into which the material subjected to evaporation is charged. A heater for heating the material is provided to the evaporation source 810, and the heater is controlled with a controlling apparatus 812. The inside of the chamber 802 is made a high vacuum using the exhaust apparatus 804, and the material is vaporized by heating the evaporation source 810 to start evaporation. A shutter 814 is opened when an evaporation rate becomes constant, by which deposition of the material is started over the substrate.
The stage 20 is used in the etching apparatus 50, the CVD apparatus 60, the sputtering apparatus 70, and the evaporation apparatus 80 described in the Third to Sixth Embodiments. When the stage 20 is used, it is possible to uniformly heat the substrate and to precisely control the heating temperature. Therefore, when the etching apparatus 50, the CVD apparatus 60, the sputtering apparatus 70, or the evaporation apparatus 80 is used, it is possible to uniformly form various films with controlled characteristics over the substrate. Further, since the first end 111-1 of the metal sheath 110 is stored in the shaft 330 in the stage 20, the degree of freedom in the position where the stage 20 is disposed is improved.
Each of the embodiments described above as the embodiments of the present invention can be appropriately combined and implemented as long as no contradiction is caused. Further, the addition, deletion, or design change of components, or the addition, deletion, or condition change of processes as appropriate by those skilled in the art based on each of embodiments are also included in the scope of the present invention as long as they are provided with the gist of the present invention.
Further, it is understood that, even if the effect is different from those provided by each of the above-described embodiments, the effect obvious from the description in the specification or easily predicted by persons ordinarily skilled in the art is apparently derived from the present invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| JP2022-112544 | Jul 2022 | JP | national |
This application is a Continuation of International Patent Application No. PCT/JP2023/016491, filed on Apr. 26, 2023, which claims the benefit of priority to Japanese Patent Application No. 2022-112544, filed on Jul. 13, 2022, the entire contents of which are incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2023/016491 | Apr 2023 | WO |
| Child | 19006584 | US |
