This is a National phase application in the United States of International Patent application PCT/EP2012/005050 filed Dec. 7, 2012, which claims priority on European Patent Application No. 11193058.2 filed Dec. 12, 2011. The entire disclosures of the above patent applications are hereby incorporated by reference.
The present invention concerns the field of shock resistant bearings (bearings with a shock absorber device) for a timepiece and the methods of manufacturing the same. In particular, the invention concerns a shock resistant bearing intended to receive a pivot of the balance staff of a mechanical watch movement.
CH Patent 700496 describes a shock resistant bearing formed by single crystal silicon and including a central portion and radial elastic arms connecting this central portion to a peripheral annular portion. The central portion includes a flared hole having the shape of a four-sided pyramid. First of all, it will be noted that the bottom of a four-sided hole is not optimum for supporting a pivot. As regards the making of a hole of this type, the above Patent provides anisotropic wet chemical etching. To achieve this, it is mentioned that the silicon substrate must be oriented properly to enable machining of the pyramid-shaped hole. Next, to machine the rest of the single-piece silicon part and in particular the elastic arms, the above Patent proposes using another machining technique, namely deep reactive ion etching (DRIE). This latter technique requires complex expensive plants which are different from those used for anisotropic wet chemical etching. Thus, the manufacturing cost of shock resistant bearings according to the teaching of the above Patent is relatively high. It will be noted that the use of two different techniques in different plants to machine the silicon parts does not arise from a propensity of the authors of CH Patent No 700496 to needlessly complicate the method of manufacturing silicon shock resistant bearings. It results in fact from a requirement arising from the properties of single crystal silicon. Indeed, the orientation of the silicon substrate required to obtain the flared pyramid-shaped hole cannot provide an elastic structure with arms having substantially vertical lateral walls, or the peripheral annular portion.
Generally, the present inventor has observed that silicon does not permit the machining of a structure with substantially vertical walls and exhibiting curvature by means of etching in an acid bath. Further, to obtain apertures in a single crystal silicon wafer with vertical walls, only specific silicon crystal orientations in the wafer are possible (incompatible with the orientation for obtaining pyramid-shaped holes). The possible directions for such vertical walls are limited and the vertical walls are only formed of plane surfaces.
WO Patent Application No 2009/060074 describes shock resistant bearings including a single-piece silicon part and a pierced stone associated therewith. This single-piece part defines an elastic structure and an endstone. It is formed in a silicon wafer using the well known techniques of photolithography and etching. This Patent document mentions that single-piece parts can be made of silicon or another preferably single crystal material easily machinable by photolithography and chemical etching techniques. No example is given other than silicon. As regards silicon, as mentioned above, although it is possible to obtain slots or apertures with vertical walls, designs are limited. In particular, it is not possible to obtain all the designs shown in the Figures of the above Patent document by chemical etching of a silicon crystal wafer. The teaching of the above Patent concerning the method of manufacturing shock resistant bearings made of single crystal material remains vague. Only the case of silicon is explicitly mentioned. The limits and drawbacks of a silicon crystal embodiment were set out in the discussion of CH Patent No 700496. Further, the meaning given to chemical etching here is not clear. In any event, it may be concluded that elastic structures such as those shown in the Figures are not made in an acid bath, but rather by deep reactive ionic etching as in CH Patent No 700496.
The Applicant of WO Patent Application No 2009/060074 also filed EP Patent Application No 2015147 (same priority dates). This latter document discloses a shock resistant bearing formed by a disc of single crystal material; said disc defining an elastic structure and a central portion with a blind hole intended to receive a balance pivot. In a variant, the elastic structure defines three interleaved spirals. The blind hole has a flat bottomed cylindrical shape, as shown in the Figures. It will be noted that the flat bottomed cylindrical shape is not optimum since the pivot moves and rubs against the cylindrical portion in an erratic manner, because the hole is wider than the portion of the pivot introduced therein. According to a main embodiment, that Patent document proposes using a single crystal silicon disc or wafer, which is machined using the well known techniques of photolithography (also called chemical processes).
It is an object of the present invention to answer the problem of the complex and expensive machining of single-piece single crystal parts, and to provide a shock resistant bearing, formed by a single-piece part defining an elastic structure and a central portion in which there is machined a hole intended to receive a pivot of a rotating wheel set, which can be machined industrially at a relatively low cost yet is of high quality.
It is another object of the invention to provide a shock resistant bearing of the aforementioned type which has a blind hole whose shape is advantageous for properly centering the axis of the rotating wheel set pivoted in this blind hole and for minimising friction.
It is another object of the present invention to provide a shock resistant bearing which is attractive and which has a particular recognisable appearance.
The present invention concerns a shock resistant bearing for a timepiece including an elastic structure and a central portion carried by this elastic structure, this central portion having a blind hole intended to receive a pivot of a rotating wheel set of the timepiece. The elastic structure and the central portion are formed by a single-piece part formed of single crystal quartz and the blind hole has three oblique facets together defining a truncated or non-truncated trigonal pyramid.
In a preferred variant, the single-piece part is a pierced wafer whose axis perpendicular to its two main faces is almost parallel to the optic axis of the single crystal quartz.
The present invention also concerns two main implementations of a method for manufacturing a shock resistant bearing wherein the elastic structure and a central portion, carried by the elastic structure and having a blind hole, are made of single crystal quartz.
The manufacturing method according to the invention makes it possible to obtain a high quality transparent shock resistant bearing by a relatively inexpensive method which only requires machining in chemical baths. Further, this method makes it possible to machine a blind hole for the bearing whose bottom is at least partially defined by a trigonal pyramid against whose faces the pivot of a rotating wheel set abuts. This blind hole ensures improved centering of the axis of the rotating wheel set and also minimises friction. A transparent bearing also has a technical advantage in that it makes it easier to check the presence of oil in the hole.
Other particular features and advantages of the invention will be set out below in the detailed description of the invention.
The invention will be described below with reference to the annexed drawings, given by way of non-limiting example, and in which:
A shock resistant bearing 2 according to the invention will be described below with reference to
As a result of the arrangement of an elastic structure at the periphery of central portion 14, this latter may undergo movements in the plane of wafer 6 and also, to a certain extent, vertically. For this purpose, a slot is preferably arranged between elastic structure 10 and the bottom of the housing of base 8. Bearing 2 defines a suspended shock resistant bearing. It will be noted that the base includes an aperture for the passage of the arbour of a rotating wheel set and acts as a stop member in the event of a violent axial and/or vertical shock. It will be noted that the stop member may be arranged in various manners and that, in a variant, wafer 6 is directly arranged in the bridge or plate 4 with no intermediate element.
The elastic structure may have numerous design variants in the plane of wafer 6. It is sufficient for central portion 14 to be connected in an elastic manner to the peripheral portion of base 8. However, the arrangement of interleaved spiral arms of the type shown in
According to the invention, blind hole 16, machined in the bottom face of central portion 14, has three oblique facets 40A, 40B, 40C together at least partially defining a trigonal pyramid (see
In a preferred variant, the blind hole also has a substantially vertical lateral wall in the initial portion thereof (see
According to a preferred embodiment, the single crystal quartz wafer 6 is selected so that axis Z perpendicular to the two main faces thereof, is approximately the optical axis of the single crystal quartz.
According to a first alternative or a first implementation of the method of manufacturing a shock resistant bearing of the type including an elastic structure and a central portion carried by the elastic structure and having a blind hole intended to receive a pivot of a rotating wheel set of the timepiece, said elastic structure and said central portion being formed by one single-piece part, the following steps are provided:
A) Making a single crystal quartz wafer whose two main faces, respectively the first and second faces, are substantially oriented perpendicularly to the optical axis of the crystalline structure of the single crystal quartz;
B) Forming a first mask on the first face of the single crystal quartz wafer, said first mask being structured by photolithography so as to define on said first face the contours of the elastic structure and of the blind hole arranged in said wafer;
C) Machining the elastic structure and the blind hole in the single crystal quartz wafer by inserting said wafer into a chemical etching bath suited for an anisotropic etch of single crystal quartz which greatly facilitates an etch along the optical axis, the first mask being selected to resist the etch of this etching bath.
It will be noted that in the case of a relatively small hole diameter, in particular smaller than around 120 microns (120 μm), the speed at which the hole is formed along the central axis thereof is lower than the machining speed, in the direction of said axis, of the elastic structure so that it is possible to simultaneously obtain the blind hole and the elastic structure by an etch simply from the first face.
According to a preferred variant, the machined elastic structure has a design with curved slots and/or apertures whose edges at least partially have curved lines; which optimises the elastic structure as explained above.
In a preferred variant of this first implementation, shown in
A) Making a single crystal quartz wafer 6A whose two main faces, respectively the first and second faces, are substantially oriented perpendicularly to the optical axis Z of the crystalline structure of the single crystal quartz;
B) Forming a first mask 20 on the first face of the single crystal quartz wafer, and a second mask 26 on the second face of said wafer, said first and second masks being structured by photolithography so as to define respectively on said first face and said second face the contour of the elastic structure 10, the first mask 20 also defining the contour of the blind hole 16A arranged in wafer 6;
C) Machining elastic structure 10 and blind hole 16A in the single crystal quartz wafer by inserting said wafer into a chemical etching bath adapted to an anisotropic etch of single crystal quartz which greatly facilitates an etch along the optical axis Z, the first and second masks being selected to resist the etch of this chemical etching bath.
Thus, the quartz wafer is simultaneously etched on both sides of the wafer to form the elastic structure. This firstly makes it possible to reduce the machining time in the etching bath and also to obtain apertures with vertical walls. This variant is particularly indicated when the blind hole has a relatively large diameter, particularly more than 150 microns (150 μm). Thus, it is easily possible to make the blind hole simultaneously with the machining of the elastic structure in the same chemical etching bath. However, it will be noted that this variant is advantageous for making the elastic structure even when the blind hole has a smaller diameter.
In a particular variant, the normal to the two main faces of the quartz wafer forms an angle of around two degrees (2° with the optical axis (angle of double refraction) of the crystalline structure of the single crystal quartz. The quartz etching bath contains, in particular, hydrofluoric acid (HF). In a variant it also contains ammonium fluoride (NH4F).
The photolithography method used to make the two masks is standard. A photosensitive layer 22, respectively 28 is deposited on a metal layer 20, respectively 26, for example a chromium-gold layer (Cr—Au). Each photosensitive layer is then selectively illuminated and developed to obtain apertures corresponding to the mask provided. Thus, photosensitive layer 22 has apertures 24A for the elastic structure and an aperture 25 for the blind hole; whereas photosensitive layer 28 has only apertures 24B for elastic structure 10. Once photosensitive layers 22 and 28 have been structured, wafer 6A is placed in the chemical bath adapted to the etch of metal layers 20 and 26 so as to define the two corresponding masks (same references as the metal layers) for the subsequent localised quartz etch.
Finally, wafer 6A provided with its two masks is placed in a chemical bath selected to perform a strongly anisotropic etch of single crystal quartz by facilitating etching substantially on the optical axis Z. After a determined time in the chemical bath, which is a function, in particular, of the thickness of the wafer and also of the depth required for the blind hole, a pierced wafer 6 is obtained with circular slots 12 having substantially vertical walls. Further, there is obtained a blind hole 16A whose bottom has inclined facets as explained above (the symmetrical V-shaped profile in the cross-section of
According to a second alternative or a second implementation of the method of manufacturing a shock resistant bearing of the type described above, the method includes the following steps:
A) Making a single crystal quartz wafer whose two main faces, respectively the first and second faces, are substantially oriented perpendicularly to the optical axis of the crystalline structure of the single crystal quartz;
B) Forming a first initial mask on the first face of the single crystal quartz wafer, said first initial mask being structured by photolithography so as to define on the first face the contour of the elastic structure but not the contour of the blind hole intended to receive the pivot of a rotating wheel set;
C) Partially machining the elastic structure, defined by the first initial mask obtained in step B), in the single crystal quartz wafer by placing said wafer in a chemical etching bath adapted for an anisotropic etch of single crystal quartz greatly facilitating an etch along the optical axis of the single crystal quartz, the first initial mask being selected to resist the etch of the chemical etching bath;
D) Structuring the first initial mask so as to define the contour of the blind hole and to obtain a first final mask;
E) Final machining of the elastic structure and simultaneous machining of the blind hole, defined by the first final mask structured in step D), in the single crystal quartz wafer by placing the wafer in the chemical etching bath again.
A preferred variant of this second implementation of the method of the invention is shown schematically in
According to a preferred variant, between steps B) and C) mentioned above, photosensitive layer 23, having served for the partial structuring of first initial mask 21A to define the elastic structure, is illuminated to form a hole 25A in the photosensitive layer corresponding to the intended blind hole (
The second implementation of the method according to the invention makes it possible to determine two different time periods for machining the elastic structure and machining the blind hole in an anisotropic etching bath for single crystal quartz. This optimises the etching time for the elastic structure and for the blind hole. Thus, by way of example, the single crystal quartz wafer has a thickness of 300 microns and the diameter of the blind hole is equal to around 200 microns. The first etching phase of period of the elastic structure lasts for example around two hours (2 h) and the second etching phase or period of this elastic structure and of the blind hole lasts for example around two hours. The depth of the blind hole is for example between 100 and 150 microns.
As shown in
Number | Date | Country | Kind |
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11193058 | Dec 2011 | EP | regional |
Filing Document | Filing Date | Country | Kind |
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PCT/EP2012/005050 | 12/7/2012 | WO | 00 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2013/087173 | 6/20/2013 | WO | A |
Number | Name | Date | Kind |
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3306027 | Schneider | Feb 1967 | A |
3790237 | Quaile et al. | Feb 1974 | A |
3942848 | Voumard | Mar 1976 | A |
6806797 | Kikushima | Oct 2004 | B2 |
7394326 | Takizawa | Jul 2008 | B2 |
7550905 | Tanaya | Jun 2009 | B2 |
8317391 | Conus et al. | Nov 2012 | B2 |
8446079 | Fang | May 2013 | B2 |
20060187767 | Conus et al. | Aug 2006 | A1 |
20110164478 | Conus et al. | Jul 2011 | A1 |
20130188462 | Helfer et al. | Jul 2013 | A1 |
Number | Date | Country |
---|---|---|
700 496 | Sep 2010 | CH |
1 462 879 | Sep 2004 | EP |
1 986 059 | Oct 2008 | EP |
2 015 147 | Jan 2009 | EP |
2 164 937 | Aug 1973 | FR |
2 279 140 | Feb 1976 | FR |
2 363 727 | Mar 1976 | FR |
2009060074 | May 2009 | WO |
Entry |
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English Translation of Von Gunten, CH 700,496, electronically translated Apr. 22, 2015. |
International Search Report issued in corresponding application PCT/EP2012/005050, completed Apr. 18, 2013 and mailed Apr. 24, 2013. |
Number | Date | Country | |
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20140341005 A1 | Nov 2014 | US |