Patent Application
20220411322
The present invention relates to a silica glass, a high-frequency device using a silica glass, and a method for producing a silica glass.
Commonly, high-frequency devices such as an antenna, a filter, a demultiplexer, a diplexer, a capacitor, and an inductor have been used as passive electronic devices in a high-frequency band such as a microwave or a millimeter wave. These high-frequency devices generally include a dielectric substrate such as a resin substrate, a ceramic substrate, and a glass substrate.
Recently, in order to increase the communication capacity and the communication speed, the signal frequency has been further increased. It is known that, in a high-frequency device, as the signal frequency increases, a transmission loss of a dielectric substrate increases and a signal deteriorates. In order to prevent this, it is desirable to reduce relative permittivity or dielectric loss tangent of the dielectric substrate.
On the other hand, it is known that as the relative permittivity decreases, the size of the dielectric substrate is required to be increased. Therefore, it is desirable that the dielectric substrate has a small dielectric loss tangent and can reduce the relative permittivity depending on the purpose.
Patent Literature 1 discloses an antenna device including a dielectric substrate. The dielectric substrate preferably has a low dielectric loss tangent, and a silica glass is used as a material of the dielectric substrate.
It is known that the density and the relative permittivity of a silica glass are substantially proportional to each other. When the density decreases, the relative permittivity decreases. Examples of a method of controlling the density of the silica glass include a method of utilizing bubbles in the glass. For example, Patent Literature 2 discloses a production method, which is generally called a vapor-phase axial deposition (VAD) method, including a step of depositing a silica glass fine particles (soot) to obtain a silica glass porous body, and a step of heating and sintering the silica glass porous body. The conditions such as pressure, temperature, and treatment time during the heating and sintering are optimally combined to control the diameter and the number of bubbles remaining after the sintering, whereby the density of the obtained silica glass can be controlled.
Patent Literature 1: JP-A-2017-228846
Patent Literature 2: WO 2008/069194
However, the production method described in Patent Literature 2 has a limit in a range of a controllable density. Specifically, only a silica glass having a density of 2.0 g/cm3 or 2.16 g/cm3 was obtained. A silica glass having a density of smaller than 2.0 g/cm3 is hardly obtained, and therefore, a silica glass having a relative permittivity depending on the purpose cannot be obtained.
An aspect of the present invention provides a technique for obtaining a silica glass having a desired density.
A silica glass according to an aspect of the present invention includes bublles in the number of 1×107/cm3 to 1×1015/cm3 and has a density of 0.5 g/cm3 to 1.95 g/cm3.
A method for producing a silica glass according to an aspect of the present invention includes: a step of depositing SiO2 fine particles generated by flame hydrolysis of a silicon compound, to obtain a silica glass porous body; a step of heating and sintering the silica glass porous body in an inert gas atmosphere, to obtain a silica glass dense body; and a step of performing a foaming treatment to heat the silica glass dense body under a reduced pressure condition.
According to the present invention, a silica glass having a desired relative permittivity can be obtained by controlling a density by means of controlling the number and diameter of bubbles contained in the silica glass.
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the specification, the expression “to” indicating a numerical range means that numerical values described before and after “to” are included as a lower limit value and an upper limit value, respectively. The lower limit value and the upper limit value include a range of rounding off.
As illustrated in
A lower limit value of the density of the silica glass 1 is 0.5 g/cm3, preferably 0.7 g/cm3, and more preferably 1.0 g/cm3. In the case where the density is 0.5 g/cm3 or more, the strength of the silica glass 1 is sufficiently obtained. On the other hand, an upper limit value of the density is 1.95 g/cm3, preferably 1.8 g/cm3, more preferably 1.65 g/cm3, and still more preferably 1.6 g/cm3. In the case where the density is 1.95 g/cm3 or less, the relative permittivity does not become too high, and the silica glass 1 is suitable as a dielectric substrate used for a high-frequency device.
The silica glass portion 11 is transparent and has a density of about 2.2 g/cm3.
A lower limit value of the number of bubbles 12 (the number of bubbles) is 1×107/cm3, and preferably 3×107/cm3. On the other hand, an upper limit value of the number of bubbles is 1×1015/cm3, preferably 1×1014/cm3, and more preferably 1×1013/cm3. A preferable range of the number of the bubbles 12 is related to the size of the opening 13 to be described later, and in the case where the number of bubbles is 1×107/cm3 or more, the density of the silica glass 1 does not become too high and falls in an appropriate range even without increasing a diameter of the opening 13. For example, when the silica glass 1 is processed for a high-frequency device application and a metal wiring layer is formed on a surface of an obtained substrate, if the diameter of the opening 13 is larger than a wiring width, the metal wiring layer cannot be formed as designed, which may cause an operation failure of the device. However, the above risk does not occur in the case where the number of bubbles is 1×107/cm3 or more. On the other hand, in the case where the number of bubbles is 1×1015/cm3 or less, there is no risk that the bubbles are too small and disappear.
The gas contained in the bubbles 12 contains He, Ne, Ar, Kr, Xe, N2 or a mixed gas thereof in an amount of 90 mass % or more.
The opening 13 has a substantially elliptical shape. The size of the diameter of the opening 13 is related to the number of bubbles. When the diameter of the opening 13 is large, the number of bubbles cannot be increased, and when the diameter of the opening 13 is small, the number of bubbles can be increased. As described above, too large diameter of the opening 13 is disadvantageous in the formation of a metal wiring layer, for example. In recent years, a wiring width of the metal wiring layer for a high-frequency device has been miniaturized, and it is desirable that the width is preferably at least 30 μm or less, more preferably 10 μm or less, still more preferably 5 μm or less, and particularly preferably 1 μ1n or less. Therefore, an average value of the major axis diameter of the openings is preferably 30 μm or less, more preferably 10 μm or less, still more preferably 5 μm or less, and particularly preferably 1 μm or less.
The silica glass 1 has a content of OH group being preferably 100 ppm or less, and more preferably 50 ppm or less. As the content of the OH group is decreased, a dielectric loss tangent is reduced (Reference Literature: JP-A-H07-330357). In the specification, ppm represents mass parts per million, and ppb represents mass parts per billion.
The silica glass 1 has a content of each of metal impurities including Li, Na, Mg, Al, K, Ca, Cr, Mn, Fe, Ni, Cu, Ti, Co, and Zn being 0.5 ppm by mass or less.
As the content of the metal impurities is reduced, the metal contamination can be prevented and the yield is increased in a process of processing the silica glass 1 for a high-frequency device application.
The silica glass 1 has a relative permittivity in a frequency range of 20 GHz to 110 GHz being preferably 1.3 to 3.5, and more preferably 1.5 to 3.5. The relative permittivity within this range can ensure a wide operating bandwidth while sufficiently reducing the size of the device, in the case where the silica glass 1 is used for a filter for a high-frequency device.
The silica glass 1 having the above-mentioned relative permittivity may also be preferably used as a member used for a plasma etching apparatus for producing a semiconductor.
For example, in the case where the silica glass 1 is used as a member used in a plasma processing chamber, electrical distortion is reduced due to low relative permittivity. Therefore, generation of unnecessary plasma can be reduced to a minimum. At this time, the temperature during use is assumed to be 50° C. to 200° C., the pressure is assumed to be 150 Pa or less, and the relative permittivity is preferably 1.3 to 3.5 in a frequency range of 100 kHz to 200 MHz.
The silica glass 1 has a dielectric loss tangent in a frequency range of 20 GHz to 110 GHz being preferably 1.0×10−5 to 5.0×10−4. In the case where the dielectric loss tangent is sufficiently small as described above, deterioration of a signal due to a transmission loss can be prevented, for example, in the case where the silica glass 1 is used as a dielectric substrate for a high-frequency device.
The silica glass 1 after being optically polished has a root-mean-square height of a glass surface being preferably 1 μm or less. In the case where the root-mean-square height is sufficiently small as described above, an increase in a transmission loss caused by a skin current can be prevented, for example, in the case where a conductor layer is formed on a surface of the optically polished silica glass 1 for a high-frequency device application. In order to further reduce the transmission loss, the surface of the optically polished silica glass 1 may be subjected to a smoothing treatment by a method such as fire polishing or CO2 laser. In the specification, the optical polishing means polishing performed by using a slurry containing an abrasive. As the abrasive, cerium oxide particles, silicon oxide particles, aluminum oxide particles, zirconium oxide particles, titanium oxide particles, diamond particles, silicon carbide particles, and the like can be used.
Next, a method for producing a silica glass according to an embodiment of the present invention will be described. A VAD method is used as the method for synthesizing the silica glass in the present invention, but the production method may be appropriately changed as long as the effect of the present invention is exhibited.
(1) Selection of Synthetic Raw Material
The synthetic raw material of the silica glass is not particularly limited as long as it is a raw material that can be gasified, and typical examples thereof include silicon halide compounds, for example, silicon chlorides such as SiCl4, SiHCl3, SiH2Cl2, and SiCH3Cl3, and silicon fluorides such as SiF4, SiHF3, and SiH2F2, and silicon compounds not containing a halogen, such as alkoxysilanes represented by RnSi(OR)4−n. (where R represents an alkyl group having 1 to 4 carbon atoms, and n represents an integer of 0 to 3) and (CH3)3Si—O—Si(CH3)3.
(2) Formation of Silica Glass Porous Body
The synthetic raw material is subjected to flame hydrolysis at a temperature of preferably 1,000° C. to 1,500° C. to synthesize SiO2 fine particles, and the SiO2 fine particles are deposited on a rotating substrate, thereby forming the silica glass porous body 2 as illustrated in
(3) Dehydration Treatment
The silica glass porous body 2 is preferably heated at a high temperature in a vacuum atmosphere to perform a dehydration treatment. Although the dehydration treatment is not essential, it is preferable to perform the dehydration treatment because the OH group concentration of the silica glass 1 to be obtained later is reduced by this step and the dielectric loss tangent is reduced, as will be described later.
The heating temperature during the dehydration treatment is preferably 1,000° C. to 1,300° C. In the case where the heating temperature is 1,000° C. or higher, a dehydration reaction sufficiently proceeds, and in the case where the temperature is 1,300° C. or lower, densification of the porous body may not proceed earlier than the progress of the dehydration reaction.
Regarding the dehydration treatment time, the silica glass porous body 2 may be maintained at the above-mentioned heating temperature for 240 hours or less. As the treatment time is increased, the OH group concentration is decreased. However, too long treatment time deteriorates the production efficiency.
(4) Heating and Sintering
When the dehydrated silica glass porous body 2 is pressurized, and heated and sintered at a high temperature in an inert gas atmosphere, a silica glass dense body in which the pores 22 leading to the outside are completely closed is obtained.
During the heating and sintering, the inert gas is dissolved in the silica glass. The inert gas is typically He, Ne, Ar, Kr, Xe, N2 or a mixed gas thereof, and as will be described in detail later, Ar is preferable. It is known that the solubility of the inert gas in the silica glass tends to increase as a partial pressure of the inert gas in the atmosphere increases or as a temperature of the silica glass decreases.
The range of pressurization during the sintering is preferably 0.01 MPa to 200 MPa. In the case where the pressure is 0.01 MPa or more, the inert gas is sufficiently dissolved, and in the case where the pressure is 200 MPa or less, the inert gas may not be excessively dissolved. As will be described later, the dissolution amount of the inert gas affects the degree of foaming in the subsequent foaming treatment.
The heating temperature during the sintering is preferably 1,200° C. to 1,700° C., and i s preferably higher than the heating temperature during the dehydration treatment. In the case where the heating temperature is 1,200° C. or higher, the sintering sufficiently proceeds, and in the case where the heating temperature is 1,700° C. or lower, volatilization of a glass component may not occur.
Regarding the sintering time, the silica glass porous body 2 may be maintained at the pressure and the heating temperature described above for preferably 10 hours to 100 hours, and more preferably 20 hours to 60 hours. In the case where the treatment time is 10 hours or more, the sintering and the dissolution of the inert gas sufficiently proceed, and in the case where the treatment time is 100 hours or less, the production efficiency is good.
(5) Foaming Treatment
Subsequently, the silica glass dense body is heated at a high temperature while the pressure is reduced to a pressure of less than 0.01 MPa, so that the inert gas dissolved in the silica glass foams, or bubbles in the silica glass dense body are thermally expanded, thereby obtaining the silica glass 1 having uniformly dispersed bubbles 12.
The mechanism of foaming will be described. As described above, it is known that the solubility of the inert gas in the silica glass tends to increase as the partial pressure of the inert gas in the atmosphere increases or as the temperature of the silica glass decreases. Therefore, when heating is performed under a condition of a lower pressure or a higher temperature in the foaming treatment than that during the heating and sintering, a difference between the dissolution amount during the heating and sintering and the dissolution amount during the foaming treatment contributes to a supersaturated state, and foaming of the inert gas occurs in the silica glass dense body.
Among the types of inert gases described above, Ar is preferable because Ar is relatively inexpensive and has high temperature dependence of solubility, and the degree of foaming is easily controlled.
The heating temperature during the foaming treatment is preferably 1,300° C. to 1,800° C., and is preferably higher than the heating temperature during the heating and sintering. In the case where the heating temperature is 1,300° C. or higher, sufficient foaming or thermal expansion can be obtained, and in the case where the heating temperature is 1,800° C. or lower, there is no risk that the glass material bursts due to excessive foaming or thermal expansion.
Regarding the foaming treatment time, the silica glass dense body may be maintained at the pressure and the heating temperature described above for preferably 1 minute to 10 hours. In the case where the treatment time is 1 minute or more, sufficient foaming or thermal expansion is obtained, and in the case where the treatment time is 10 hours or less, there is no risk that the glass material bursts due to excessive foaming or thermal expansion.
By combining the pressures, the heating temperatures, and the treatment times during the heating and sintering and the foaming treatment to change the degree of foaming of the inert gas that foams in the supersaturated state and the degree of thermal expansion of the bubbles, the number and the diameter of the bubbles 12 contained in the silica glass 1 can be controlled, whereby the density can be controlled.
Next, experimental data will be described mainly with reference to Table 1, Table 2, and
The physical property values of the silica glass 1, the transparent silica glass, and the silica glass dense body 3 according to each example were measured by the following method.
Examples 1 to 10 are Inventive Examples, and Examples 11 to 16 are Comparative Examples.
The density of about 20 g of a glass sample was calculated by Archimedes method by using a molecular weight balance (trade name: AP224W) manufactured by Shimadzu Corporation.
A cut surface of the silica glass 1 was optically polished, and an optical microscope image (270 m×340 m) of the cut surface was obtained. Then, a section of 125 μm×160 μm at each of four corners of the optical microscope image was extracted, followed by determining an average value of the major axis diameter of openings 13 included in the respective sections, and an average value of the four average values was defined as an average major axis diameter of the opening. As for openings 13 on a frame line of the section, an opening whose major axis diameter could not be clearly measured was excluded, and as for an opening 13 formed by uniting a plurality of openings, a shape of each opening was estimated based on a contour line of the opening 13 formed by uniting the plurality of openings, and each major axis diameter was measured.
The number of bubbles was calculated from the following formula (1) on the assumption that all of the bubbles 12 contained in the silica glass 1 were the same spherical shape and a diameter of the spherical shape was equal to the average major axis diameter of the opening described above.
In the above formula (1), p represents the density (unit: g/cm3) of the silica glass 1, d represents the average major axis diameter (unit: cm) of the opening, and the unit of the number of bubbles is /cm3.
The relative permittivity and the dielectric loss tangent of a glass sample of 50 mm×40 mm×0.3 mm were measured by using a cavity resonator and a vector network analyzer in accordance with a method described in JIS-R1641 (2007).
The root-mean-square height was measured in accordance with a method described in JIS-B0601 (2013) by optically polishing a cut surface of a glass sample having an appropriate size.
The composition of the gas contained in the bubbles 12 was measured by using a mass spectrometer after an appropriate glass sample was pulverized in a vacuum chamber to collect the gas in the bubbles 12.
The content of the metal impurities of a glass sample having an appropriate size was measured by an inductively coupled plasma-mass spectrometer (ICP-MS) method.
The OH group concentration of a glass sample having an appropriate thickness was calculated by acquiring an IR spectrum by using an infrared spectrophotometer and quantifying an absorption peak caused by the OH group (Reference Literature: J. P. Williams; Y. S. Su; W. R. Strzegowski; B. L. Butler; H. L. Hoover; V. O. Altemose, Direct determination of water in glass, Ceramic. Bulletin., Vol. 55, No. 5, pp524, 1976).
The silica glass 1, the transparent silica glass, and the silica glass dense body 3 according to each Example were produced by the following method.
SiO2 fine particles synthesized by flame hydrolysis of SiCl4 were deposited on a rotating substrate to obtain a silica glass porous body 2. The silica glass porous body 2 was placed in a heating furnace, and after vacuum exhaust, a temperature was raised to 1,250° C., and treatment time was appropriately adjusted to perform a dehydration treatment so that the OH group concentration of the finally obtained silica glass 1 reached the value shown in Table 1. Subsequently, the heating furnace was filled with an Ar gas and pressurized, and then the temperature was raised to a predetermined temperature to perform heating and sintering. The pressure returned to atmospheric pressure, followed by naturally cooling to reach the room temperature. A silica glass dense body obtained at this time was opaque silica glass containing a small number of bubbles. Subsequently, after vacuum exhaust, the temperature was raised to a predetermined temperature, and a foaming treatment was performed. The pressure returned to atmospheric pressure, followed by naturally cooling to reach the room temperature, and then, the treated product was taken out. The obtained silica glass 1 contained bubbles 12 that were uniformly dispersed. The pressure, the heating temperature, and the treatment time during the heating and sintering, and the heating temperature and the treatment time during the foaming treatment were combined so that the density, the number of bubbles, and the average major axis diameter of the opening shown in Table 1 were satisfied.
SiO2 fine particles synthesized by flame hydrolysis of SiCl4 were deposited on a rotating substrate to obtain a silica glass porous body 2. The silica glass porous body 2 was placed in a heating furnace and was heated to 1,250° C. after vacuum exhaust, and treatment time was appropriately adjusted to perform a dehydration treatment so that the OH group concentration shown in Table 1 was satisfied. Subsequently, the dehydrated silica glass porous body was heated to 1,350° C. and was held for 24 hours to perform heating and sintering. The pressure returned to atmospheric pressure, followed by naturally cooling to reach the room temperature, and then, the treated product was taken out. The obtained silica glass dense body was transparent silica glass that does not contain bubbles substantially.
The silica glass is a transparent silica glass produced by a direct method.
SiO2 fine particles synthesized by flame hydrolysis of SiCl4 were deposited on a rotating substrate to obtain a silica glass porous body 2. The silica glass porous body 2 was placed in a heating furnace, and was heated to 1,350° C. and held for 2 hours after vacuum exhaust, thereby performing heating and sintering. The pressure returned to atmospheric pressure, followed by naturally cooling to reach the room temperature, and then, the treated product was taken out. At this time, the treatment time was not sufficient, and thus, the pores 22 leading to the outside were not completely closed, and a silica glass dense body 3 having pores 31 leading to the outside as illustrated in
A silica glass dense body 3 was produced in the same manner as in Example 14, except that the temperature was raised to 1,320° C. during the dehydration treatment.
A silica glass dense body 3 was produced in the same manner as in Example 15, except for holding for 5 hours after the temperature was raised during the dehydration treatment.
The relative permittivity is a value at a frequency of 35 GHz as a representative in
The dielectric loss tangent is a value at a frequency of 35 GHz as a representative in
Table 2 shows contents of metal impurities in the silica glass 1 and the transparent silica glass according to Examples 1 and 11, respectively. As is clear from Table 2, the contents of the metal impurities are in the order of ppb, which are extremely small.
As a result of measuring dielectric loss tangents at a frequency of 35 GHz of the silica glass dense bodies 3 according to Examples 14 to 16, the dielectric loss tangents were 1.1×10−3, 2.5×10−3, and 1.9×10−3, respectively. As is clear from comparison with Table 1, the dielectric loss tangent of the silica glass dense body 3 was significantly larger than the dielectric loss tangent of the silica glass 1. This is because the pores 31 leading to the outside easily adsorb water in the atmosphere, and the OH group concentration increases. Therefore, for example, in the case where the silica glass dense body 3 is used as a dielectric substrate for a high-frequency device, it is expected that a signal is deteriorated due to a large transmission loss.
The silica glass, the high-frequency device using the silica glass, and the production method of the silica glass according to the present invention have been described above, but the present invention is not limited to the above-described embodiment and the like. Various changes, modifications, substitutions, additions, deletions, and combinations are allowed within the scope described in the claims. They naturally belong to the technical scope of the present invention.
1.38 × 1010
6.53 × 1011
1.19 × 1012
Although the present invention has been described in detail with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the present invention. The present application is based on a Japanese Patent Application No. 2020-034258 filed on Feb. 28, 2020, contents of which are incorporated herein by reference.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2020-034258 | Feb 2020 | JP | national |
This is a continuation of International Application No. PCT/JP2021/006492 filed on Feb. 19, 2021, and claims priority from Japanese Patent Application No. 2020-034258 filed on Feb. 28, 2020, the entire content of which is incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2021/006492 | Feb 2021 | US |
| Child | 17895149 | US |
