Claims
- 1. A silicon carbide sintered member, consisting essentially of:
- a silicon carbide sintered body; and
- a heat insulating layer formed on a surface of said silicon carbide sintered body, said layer consisting essentially of zirconia and having a thickness of not greater than 100 microns;
- wherein said heat insulating layer reduces the thermal conductivity of said silicon carbide sintered member.
- 2. The silicon carbide sintered member according to claim 1, wherein said thickness is not greater than 70 microns.
- 3. The silicon carbide sintered member according to claim 1, further comprising an intermediate layer formed between said silicon carbide sintered body and said heat insulating layer, wherein said intermediate layer has a thermal expansion coefficient between that of the silicon carbide sintered body and that of the heat insulating layer.
- 4. The silicon carbide sintered member according to claim 1, wherein said silicon carbide sintered body further comprises additives selected from the group consisting of B, C, Be and Al.
- 5. The silicon carbide sintered member according to claim 1, wherein said zirconia is stabilized with at least one additive selected from the group consisting of Y.sub.2 O.sub.3, MgO and CaO.
- 6. The silicon carbide sintered member according to claim 1, wherein said zirconia is partially stabilized with at least one additive selected from the group consisting of Y.sub.2 O.sub.3, MgO and CaO.
- 7. The silicon carbide sintered member according to claim 1, further comprising a thermal conductivity of not greater than 0.06 cal/cm.sec..degree.C.
- 8. A silicon carbide sintered member, consisting essentially of:
- a silicon carbide sintered body; and
- a heat insulating layer formed on a roughened or activated surface of said silicon carbide body by plasma spraying, said layer consisting essentially of zirconia and having a thickness of not greater than 100 microns;
- wherein siad heat insulating layer is rigidly adhered to said body, such that said layer reduces the thermal conductivity of said silicon carbide sintered member.
- 9. The silicon carbide sintered member according to claim 8, where said thickness is not greater than 70 microns.
- 10. The silicon carbide sintered member of claim 8, further comprising an intermediate layer formed between said silicon carbide sintered body and said heat insulating layer, wherein said intermediate layer has a thermal expansion coefficient between that of the silicon carbide sintered body and that of the heat insulating layer.
- 11. The silicon carbide sintered member according to claim 8, wherein said silicon carbide sintered body further comprises additives selected from the group consisting of B, C, Be and Al.
- 12. The silicon carbide sintered member according to claim 8, wherein said zirconia is stabilzed with at least one additive selected from the group consisting of Y.sub.2 O.sub.3, MgO and CaO.
- 13. The silicon carbide sintered member according to claim 8, wherein said zirconia is partially stabilized with at least one additive selective from the group consisting of Y.sub.2 O.sub.3, MgO and CaO.
- 14. The silicon carbide sintered member according to claim 8, further comprising a thermal conductivity of not greater than 0.06 cal/cm.sec..degree.C.
Priority Claims (1)
Number |
Date |
Country |
Kind |
60-213494 |
Sep 1985 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 905,142 filed Sept. 9, 1986 now abandoned.
US Referenced Citations (16)
Foreign Referenced Citations (3)
Number |
Date |
Country |
1058422 |
Nov 1957 |
DEX |
60-224783 |
Nov 1985 |
JPX |
1560793 |
May 1976 |
GBX |
Continuations (1)
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Number |
Date |
Country |
Parent |
905142 |
Sep 1986 |
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