Claims
- 1. A method of producing a silicon carbide sintered member having reduced thermal conductivity, comprising:
- providing a silicon carbide sintered body;
- roughening or activating a surface of said body; and
- providing a heat insulating layer on said surface, said layer consisting essentially of zirconia, and having a thickness of not greater than 100 microns.
- 2. The method according to claim 1, further comprising the step of applying a preliminary intermediate layer on said silicon carbide sintered body, wherein the thermal expansion coefficient of said intermediate layer is between that of the silicon carbide sintered body and that of the heat insulating layer.
- 3. The method according to claim 1, wherein said surface is roughened or activated by at least one process selected from the group consisting of polishing with abrasive grits, oxidizing by heating in air, and chemical etching.
- 4. The method according to claim 1, wherein said heat insulating layer is provided on said surface by at least one process selected from the group consisting of applying a slurry, spraying, and plasma spraying.
- 5. The method according to claim 1, wherein said silicon carbide body is formed by a process selected from the group consisting of pressureless sintering, gas pressure sintering, hot pressing, hot isostatic pressing, and reaction sintering.
Priority Claims (1)
Number |
Date |
Country |
Kind |
60-213494 |
Sep 1985 |
JPX |
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Parent Case Info
This application is a Rule 60 Divisional Application of U.S. Ser. No. 07/113,351, filed Oct. 29, 1987, which in turn is a Rule 62 Continuation Application of U.S. Ser. No. 06/905,142, filed Sept. 9, 1986 now abandoned.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
3953636 |
Kirchner |
Apr 1976 |
|
4109050 |
Mehan et al. |
Aug 1978 |
|
4461799 |
Gavrilov et al. |
Jul 1984 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
59-190248 |
Oct 1984 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
113351 |
Oct 1987 |
|
Continuations (1)
|
Number |
Date |
Country |
Parent |
905142 |
Sep 1986 |
|