Claims
- 1. Polycrystalline silicon with a total oxygen and carbon content of from 3 to 200 ppm (weight) and wherein the ratio of oxygen:carbon, as determined by infra-red analysis, is less than 2:1.
- 2. Silicon according to claim 1 wherein the total concentration of oxygen and carbon impurities is between 5 and 100 ppm (weight).
- 3. Silicon according to claim 1 wherein the oxygen:carbon ratio is about 1 and the total concentration of the elements carbon and oxygen are about 20 ppm (weight).
- 4. In an improved solar cell containing polycrystalline silicon as a photovoltaic means for creating electrical currents, the improvement comprising said polycrystalline silicon being silicon with a total oxygen and carbon content of from 3 to 200 ppm and wherein the ratio of oxygen to carbon, as determined by infra-red analysis, is less than 2:1.
Priority Claims (1)
Number |
Date |
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38 19 778.2 |
Jun 1988 |
DEX |
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Parent Case Info
This is a continuation of application Ser. No. 679,157 filed Mar. 26, 1991, abandoned, which in turn is a continuation of application Ser. No. 358,160 filed May 30, 1989, abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4837376 |
Schwirtlich et al. |
Jun 1989 |
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4877596 |
Schwirtlich et al. |
Oct 1989 |
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Non-Patent Literature Citations (2)
Entry |
K. A. Dumas et al, Conference Record, 15th IEEE Photovoltaic Specialists Conference (1981), pp. 954-958. |
J. R. Davis, Jr. et al, IEEE Trans. Electron Devices, vol. ED-27, No. 4, Apr. 1980, pp. 677-687. |
Continuations (2)
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Number |
Date |
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Parent |
679157 |
Mar 1991 |
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Parent |
358160 |
May 1989 |
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