Claims
- 1. A silicon-based photodiode having effective response to radiation in the visible to near infrared wavelengths comprising:
- a planar layer comprising crystalline Si having a defected layer within it produced by ion implantation extending into the Si layer below the surface of the Si layer exposed to the radiation wherein the defected layer has its highest concentration of defects in its deepest portion such that a region of relatively higher resistivity and containing a greater number of recombination centers is formed therein sufficient to reduce the collection at the electrodes of charge carriers produced below the defected layer;
- at least two Schottky barrier electrodes on the Si layer adjacent the defected layer;
- and means to sense the photodiode response to the radiation, said means being connected between the at least two electrodes.
- 2. A silicon-based metal-semiconductor-metal photodiode having effective response to radiation in the visible to near infrared wavelengths comprising:
- a planar layer comprising crystalline Si having a defected layer within it produced by ion implantation extending into the Si layer down to about 1.0 .mu.m below the surface of the Si layer exposed to the radiation wherein the defected layer has its highest concentration of defects in its deepest portion such that a region of relatively higher resistivity and containing a greater number of recombination centers is formed therein sufficient to reduce the collection at the electrodes of charge carriers produced below the defected layer;
- two interdigitated Schottky barrier electrodes on the Si layer adjacent the defected layer;
- and means to sense the photodiode response to the radiation, said means being connected between the at least two electrodes.
Parent Case Info
This is a continuation of application Ser. No. 08/004,803 filed on Jan. 15, 1993 now U.S. No. 5,449,387.
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4584026 |
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Foreign Referenced Citations (1)
Number |
Date |
Country |
55-53466 |
Apr 1980 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Mullins, B.W., et al., "A Simple High-Speed Schottky Photodiode," IEEE Photonics Technology Letters, vol. 3, No. 4, Apr. 1991, pp. 360-362. |
Continuations (1)
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Number |
Date |
Country |
Parent |
04803 |
Jan 1993 |
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