Claims
- 1. A sintered body of silicon nitride base having a surface portion formed integrally with an interior portion of the body, wherein the rate of decrease of the Si content in the surface portion, with respect to the Si content in the interior portion, as calculated by the formula ##EQU2## and wherein the amount of crystal grains of silicon nitride and SiAlON in the surface portion is smaller than the amount of crystal grains of silicon nitride and SiAlON in the interior portion by 30 vol % or more.
- 2. The sintered body as defined in claim 1, in which the surface portion with the decreased Si content has been produced through sintering.
- 3. The sintered body as defined in claim 1, in which the rate of decrease of Si is 25-61% by weight.
- 4. The sintered body as defined in claim 3, in which the rate of decrease of Si is 50-60% by weight.
- 5. The sintered body as defined in claim 1, in which the interior portion of the sintered body is mainly formed of silicon nitride and Sialon with boundary phases.
- 6. The sintered as defined in claim 5, in which the sintered body further comprises third components in an amount of 30% by weight or less of the entire sintered body, the third components being at least one selected from the group consisting of compounds of subgroups IVa, Va and VIa of the International Periodic Table.
- 7. The sintered body as defined in claim 6, in which said compounds are selected from the group consisting of oxides, carbides and nitrides and solid solutions thereof.
- 8. The sintered body as defined in claim 7, in which said compounds are selected from the group consisting of ZrO.sub.2, WC and TiN.
- 9. The sintered body as defined in claim 5, in which the boundary phases are formed of a sintering aid.
- 10. The sintered body as defined in claim 9, in which the sintering aid is at least one selected from the group consisting of Al.sub.2 O.sub.3, YN, AlN, MgO, CaO, Y.sub.2 O.sub.3 and rare earth oxides.
- 11. The sintered body as defined in claim 1, in which the surface portion is at least about 1.5 micrometers thick.
- 12. The sintered body as defined in claim 11, in which the surface portion is not more than 0.1 mm thick.
- 13. The sintered body as defined in claim 1, which has been produced by sintering a mass of .alpha.-silicon nitride base composition at a temperature of 1550.degree.-1800.degree. C. under a condition which allows vaporization of any silicon nitride present in the surface portion of the mass.
- 14. The sintered body as defined in claim 13, in which the sintering has been performed in an atmosphere of a reduced partial pressure of nitrogen and/or silicon, or in a reducing atmosphere.
- 15. The sintered body as defined in claim 11, in which the surface portion is not more than 1 mm thick.
- 16. A silicon nitride base sintered body formed of an interior portion and a surface portion which is formed integrally with the interior portion, wherein crystal grains of silicon nitride and Sialon in the surface portion are present in an amount less by 30 vol % or more than that in the interior portion.
- 17. The silicon nitride base sintered body as defined in claim 16 wherein part or entire of a grain boundary phase in the surface portion is crystallized.
- 18. The silicon nitride base sintered body as defined in claim 17 wherein the ratio of the content of crystalline compound(s) constituting part or entire of the grain boundary phase in the surface portion to that in the interior portion is 0.5 or more as measured by the X-ray peak intensity ratio method.
- 19. The silicon nitride base sintered body as defined in claim 17 wherein the ratio of the amount of crystalline compound(s) constituting part or entire of the grain boundary phase to the amount of the silicon nitride and Sialon grains in the surface portion is not less than 0.3 as measured by the maximum X-ray intensity ratio method.
- 20. The silicon nitride base sintered body as defined in claim 17, 18 or 19 wherein the crystallized grain boundary phase in the surface portion comprises at least one Si.sub.3 N.sub.4 -Y.sub.2 O.sub.3 base compound expressed by Si.sub.2 N.sub.4 -nY.sub.2 O.sub.2 -mX where n=1-5, X=SiO.sub.2 or Al.sub.2 O.sub.3 and m=0-4.
- 21. The silicon nitride base sintered body as defined in claim 20 wherein said Si.sub.3 N.sub.4 -Y.sub.2 O.sub.3 base compound is a mellilite-, J-, K-, H- or A-phase or a mixtures of these phases.
- 22. A silicon nitride base sintered body as defined in claim 17 wherein the ratio of mellilite content in the interior portion to mellilite content in the surface portion is less than 0.5 as measured by the X-ray peak intensity ratio method.
- 23. The silicon nitride base sintered body as defined in claim 22 wherein the ratio of the mellilite content to the content of silicon nitride and Sialon in the surface portion as measured by the maximum X-ray intensity ratio method is not less than 0.3.
- 24. A silicon nitride base sintered body formed of an interior portion and a surface portion formed integrally with the interior portion wherein ratio of the mellilite content in the interior portion to that in the surface portion is lower than 0.5 as measured by the X-ray peak intensity ratio method.
- 25. The silicon nitride base sintered body as defined in claim 24 wherein the ratio of the mellilite content is silicon nitride and Sialon content in the surface portion is not less than 0.3 as measured by the maximum X-ray intensity ratio method.
- 26. The silicon nitride base sintered body as defined in claim 18 wherein the crystalline grain boundary phase in the surface portion consists essentially of mellilite.
- 27. The silicon nitride base sintered body as defined in claim 26 wherein the ratio of the mellilite content to the content of silicon nitride and Sialon in the surface portion is not less than 0.3 as measured by the maximum X-ray intensity ratio method.
- 28. The silicon nitride base sintered body as defined in claim 16, wherein the amount of silicon nitride and Sialon grains in the surface portion is less by 50 vol % or more than that in the interior portion.
- 29. The sintered body as defined in claim 16, 17, 18, 19 or 24, in which the sintered body further comprises third components in an amount of 30% by weight or less of the entire sintered body, the third components being at least one selected from the group consisting of compounds of subgroups IVa, Va and Via of the International Periodic Table.
- 30. The sintered body as defined in claim 29, in which said compounds are selected from the group consisting of oxides, carbides and nitrides and solid solutions thereof.
- 31. The sintered body as defined in claim 30, in which said compounds are selected from the group consisting of ZrO.sub.2, WC and TiN.
- 32. The sintered body as defined in claim 17, in which the boundary phases are formed of a sintering aid.
- 33. The sintered body as defined in claim 32, in which the sintering aid is at least one selected from the group consisting of Al.sub.2 O.sub.3, YN, AlN, MgO, CaO, Y.sub.2 O.sub.3 and rare earth oxides.
- 34. The sintered body as defined in claim 33, in which the surface portion is at least about 1.5 micrometers thick.
- 35. The sintered body as defined in claim 34, in which the surface portion is not more than 0.1 mm thick.
- 36. The sintered body as defined in claim 34, in which the surface portion is not more than 1 mm thick.
- 37. The sintered body as defined in claim 21, in which the crystallized grain boundary phase in the surface portion comprises A-phase.
- 38. The sintered body as defined in claim 21, in which the crystallized grain boundary phase in the surface portion comprises J-phase and A-phase.
- 39. The sintered body as defined in claim 21, in which the crystallized grain boundary phase in the surface portion comprises K-phase and J-phase.
- 40. The sintered body as defined in claim 21, in which the crystallized grain boundary phase in the surface portion comprises H-phase and M-phase.
- 41. The silicon nitride base sintered body as defined in claim 17, wherein the grain boundary phase in the surface portion has been crystallized at a temperature range of 1400.degree. to 1700.degree. C.
- 42. The silicon nitride base sintered body as defined in claim 17, wherein the grain boundary phase in the surface portion has been crystallized at a temperature range of 1500.degree. to 1650.degree. C.
Priority Claims (2)
Number |
Date |
Country |
Kind |
63-306320 |
Dec 1988 |
JPX |
|
1-5791 |
Jan 1989 |
JPX |
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Parent Case Info
This application is a continuation of U.S. application Ser. No. 97/464,122, filed Jan. 12, 1990, now abandoned which is a CIP of 07/443,958 filed Dec. 1, 1989 now abandoned.
US Referenced Citations (26)
Foreign Referenced Citations (5)
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Country |
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Jun 1983 |
EPX |
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63-1278 |
Jan 1988 |
JPX |
63-35594 |
Jul 1988 |
JPX |
1153575 |
Jun 1989 |
JPX |
Non-Patent Literature Citations (3)
Entry |
Journal of the American Ceramic Society, "Phase Relations and Stability Studies in the Si3N-SiO2-Y2O3 Psuedoternary System", F. F. Lange, S. C. Singhal and R. C. Kuznicki, May-Jun. 1977, pp. 249-252, vol. 60, No. 5-6. |
PCT International Patent Appln. No. PCT/US88/00994, filed Mar. 25, 1988, Pankaj, Kumar Mehrotra et al. |
Matsuo et al., "Recent Advance in the Sintering Method of Si.sub.3 N.sub.4, " Ceramics Japan, vol. 18 (1983), No. 1, pp. 10-16. |
Continuations (1)
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Number |
Date |
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Parent |
464122 |
Jan 1990 |
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Continuation in Parts (1)
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Number |
Date |
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Parent |
443958 |
Dec 1989 |
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